Preliminary Datasheet 2SK3210(L), 2SK3210(S) R07DS0409EJ0400 (Previous: REJ03G0414-0300) Rev.4.00 May 16, 2011 Silicon N Channel MOS FET High Speed Power Switching Features * Low on-resistance RDS = 40 m typ. * High speed switching * 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code: PRSS0004AE-A (Package name: LDPAK(L)) RENESAS Package code: PRSS0004AE-B (Package name: LDPAK(S)-(1)) 4 D 4 1. Gate 2. Drain 3. Source 4. Drain G 1 1 2 2 3 S 3 Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Drain to source voltage VDSS 150 V Gate to source voltage VGSS 20 V ID 30 A ID (pulse)Note1 120 A Drain current Drain peak current Body-drain diode reverse drain current IDR Unit 30 A 30 A EARNote3 67 mJ PchNote2 100 W Avalanche current IAP Avalanche energy Channel dissipation Note3 Channel temperature Tch 150 C Storage temperature Tstg -55 to +150 C Notes: 1. PW 10ms, duty cycle 1 % 2. Value at Tc = 25C 3. Value at Tch = 25C, Rg 50 R07DS0409EJ0400 Rev.4.00 May 16, 2011 Page 1 of 7 2SK3210(L), 2SK3210(S) Preliminary Electrical Characteristics (Ta = 25C) Symbol Min Typ Max Unit Drain to source breakdown voltage Item V(BR)DSS 150 -- -- V Gate to source breakdown voltage Test Conditions ID = 10 mA, VGS = 0 V(BR)GSS 20 -- -- V IG = 100 A, VDS = 0 Gate to source leak current IGSS -- -- 10 A VGS = 16 V, VDS = 0 Zero gate voltage drain current IDSS -- -- 10 A VDS = 150 V, VGS = 0 Gate to source cutoff voltage VGS(off) 1.0 -- 2.5 V VDS = 10 V, ID = 1 mA Static drain to source on state resistance RDS(on) -- 40 45 m ID = 15 A, VGS = 10 V Note4 RDS(on) -- 45 63 m ID = 15 A, VGS = 4 VNote4 |yfs| 18 30 -- S ID = 15 A, VDS = 10 VNote4 Input capacitance Ciss -- 2600 -- pF Output capacitance Coss -- 820 -- pF VDS = 10 V, VGS = 0 f = 1MHz Reverse transfer capacitance Crss -- 350 -- pF Turn-on delay time td(on) -- 25 -- ns tr -- 180 -- ns td(off) -- 600 -- ns Forward transfer admittance Rise time Turn-off delay time Fall time Body-drain diode forward voltage Body-drain diode reverse recovery time VGS = 10 V, ID= 15 A RL = 2 tf -- 280 -- ns VDF -- 0.91 -- V IF = 30 A, VGS = 0 trr -- 110 -- ns IF = 30 A, VGS = 0 diF/dt = 50 A/s Notes: 4. Pulse test R07DS0409EJ0400 Rev.4.00 May 16, 2011 Page 2 of 7 2SK3210(L), 2SK3210(S) Preliminary Main Characteristics Maximum Safe Operation Area Power vs. Temperature Derating 500 300 ID (A) 10 3 1 50 100 150 Case Temperature 200 1s tio 25 n C ) ho t) 1 0.3 3 10 100 300 1000 30 VDS (V) Typical Transfer Characteristics VDS = 10 V Pulse Test ID (A) 40 4V 20 10 8 Tc = -25C 1.2 ID = 20 A 10 A 0.4 5A 8 12 Gate to Source Voltage R07DS0409EJ0400 Rev.4.00 May 16, 2011 1 2 3 Gate to Source Voltage VDS (V) 1.6 4 0 10 Pulse Test 0.8 25C 10 Drain to Source Saturation Voltage vs. Gate to Source Voltage 2.0 75C 20 VGS = 2.5 V 2 4 6 Drain to Source Voltage 40 30 Drain Current 3V 16 VGS (V) 20 4 5 VGS (V) Static Drain to Source on State Resistance vs. Drain Current 1000 Pulse Test 500 Drain to Source On State Resistance RDS(on) (m) ID (A) s( ra Drain to Source Voltage Tc (C) Pulse Test 5V 30 Drain Current = m 50 10 V Drain to Source Voltage VDS(on) (V) pe Ta = 25C 0.05 0.1 Typical Output Characteristics 0 10 Operation in this area is 0.3 limited by RDS(on) 50 0 = O Tc 0.1 0 C s 40 D m 80 PW 30 Drain Current 120 10 s 100 s 100 1 Channel Dissipation Pch (W) 160 200 100 VGS = 4 V 50 10 V 20 10 1 2 5 10 Drain Current 20 50 100 ID (A) Page 3 of 7 Preliminary 200 150 ID = 20 A 5, 10 A 100 VGS = 4 V 50 5, 10 A 20 A 10 V 0 -40 0 40 80 Case Temperature 120 Tc 25C 3 1 0.3 VDS = 10 V Pulse Test 0.1 Drain Current ID (A) Capacitance C (pF) 50 100 Typical Capacitance vs. Drain to Source Voltage Ciss 1000 Coss 300 100 30 20 Crss VGS = 0 f = 1 MHz 10 0.3 1 3 10 30 0 100 VDD = 100 V 50 V 25 V 12 200 8 VDS 100 4 VDD = 100 V 50 V 25 V 40 80 Gate Charge R07DS0409EJ0400 Rev.4.00 May 16, 2011 120 160 Qg (nc) 20 30 40 50 0 200 Switching Characteristics VGS = 10 V, VDD = 30 V PW = 5 s, duty < 1 % 2000 Switching Time t (ns) 16 VGS (V) 400 Gate to Source Voltage VGS 300 5000 20 ID = 30A 10 Drain to Source Voltage VDS (V) IDR (A) Dynamic Input Characteristics 0 10 20 3000 50 500 5 2 0.5 1 10000 100 Reverse Drain Current VDS (V) 75C 10 (C) 200 10 0.1 Drain to Source Voltage Tc = -25C 30 0.1 0.2 di / dt = 50 A / s VGS = 0, Ta = 25C 500 100 160 Body-Drain Diode Reverse Recovery Time 1000 Reverse Recovery Time trr (ns) Forward Transfer Admittance vs. Drain Current Static Drain to Source on State Resistance vs. Temperature 250 Pulse Test Forward Transfer Admittance |yfs| (S) Drain to Source On State Resistance RDS(on) (m) 2SK3210(L), 2SK3210(S) td(off) 1000 500 tf 200 tr 100 50 td(on) 20 10 0.1 0.2 0.5 1 2 Drain Current 5 10 20 50 ID (A) Page 4 of 7 2SK3210(L), 2SK3210(S) Preliminary Reverse Drain Current vs. Source to Drain Voltage Repetitive Avalanche Energy EAR (mJ) Reverse Drain Current IDR (A) 50 Maximum Avalanche Energy vs. Channel Temperature Derating Pulse Test 40 30 VGS = 10 V 20 10 0, -5 V 5V 0 0.4 0.8 1.2 1.6 Source to Drain Voltage 100 2.0 IAP = 30 A VDD = 50 V duty < 0.1 % Rg > 50 80 60 40 20 0 25 50 75 100 125 150 Channel Temperature Tch (C) VSD (V) Normalized Transient Thermal Impedance vs. Pulse Width Normalized Transient Thermal Impedance s (t) 3 Tc = 25C 1 D=1 0.5 0.3 0.2 0.1 ch - c(t) = s (t) x ch - c ch - c = 1.25C/W, Tc = 25C 0.1 0.05 PDM 0.02 1 lse 0.0 t pu o h 1s 0.03 0.01 10 PW T PW T 100 1m 10 m 100 m Pulse Width PW (s) Avalanche Test Circuit V DS Monitor D= 1 10 Avalanche Waveform EAR = L VDSS 1 x L x IAP2 x VDSS - V DD 2 I AP Monitor V (BR)DSS I AP Rg D. U. T V DS VDD ID Vin 15 V 50 0 R07DS0409EJ0400 Rev.4.00 May 16, 2011 VDD Page 5 of 7 2SK3210(L), 2SK3210(S) Preliminary Switching Time Test Circuit Switching Time Waveform Vout Monitor Vin Monitor 90% D.U.T. RL Vin Vin 10 V 50 V DD = 30 V Vout 10% 10% 90% td(on) R07DS0409EJ0400 Rev.4.00 May 16, 2011 tr 10% 90% td(off) tf Page 6 of 7 2SK3210(L), 2SK3210(S) Preliminary Package Dimensions * 2SK3210(L) JEITA Package Code RENESAS Code PRSS0004AE-A MASS[Typ.] 1.40g Unit: mm 10.2 0.3 8.6 0.3 11.3 0.5 0.3 10.0 +- 0.5 Previous Code LDPAK(L) / LDPAK(L)V 4.44 0.2 (1.4) Package Name LDPAK(L) 1.3 0.15 1.3 0.2 1.37 0.2 2.49 0.2 11.0 0.5 0.2 0.86 +- 0.1 0.76 0.1 2.54 0.5 2.54 0.5 0.4 0.1 * 2SK3210(S) JEITA Package Code SC-83 RENESAS Code PRSS0004AE-B Previous Code LDPAK(S)-(1) / LDPAK(S)-(1)V MASS[Typ.] 1.30g 7.8 6.6 (1.5) 10.0 2.49 0.2 0.2 0.1 -+ 0.1 7.8 7.0 1.3 0.15 + 0.3 - 0.5 8.6 0.3 (1.5) (1.4) 4.44 0.2 10.2 0.3 Unit: mm 1.7 Package Name LDPAK(S)-(1) 2.2 1.37 0.2 2.54 0.5 0.2 0.86 +- 0.1 2.54 0.5 0.4 0.1 0.3 3.0 -+ 0.5 1.3 0.2 Ordering Information Orderable Part Number 2SK3210L-E 2SK3210STL-E R07DS0409EJ0400 Rev.4.00 May 16, 2011 Quantity 300 pcs. 1000 pcs. 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