R07DS0409EJ0400 Rev.4.00 Page 1 of 7
May 16, 2011
Preliminary Datasheet
2SK3210(L), 2SK3210(S)
Silicon N Channel MOS FET
High Speed Power Switching
Features
• Low on-resistance
RDS = 40 mΩ typ.
• High speed switching
• 4 V gate drive device can be driven from 5 V source
Outline
RENESAS Package code: PRSS0004AE-A
(Package name: LDPAK(L))
1. Gate
2. Drain
3. Source
4. Drain
RENESAS Package code: PRSS0004AE-B
(Package name: LDPAK(S)-(1))
D
G
S
123
4
123
4
Absolute Maximum Ratings
(Ta = 25°C)
Item Symbol Ratings Unit
Drain to source voltage VDSS 150 V
Gate to source voltage VGSS ±20 V
Drain current ID 30 A
Drain peak current ID (pulse)Note1 120 A
Body-drain diode reverse drain current IDR 30 A
Avalanche current IAPNote3 30 A
Avalanche energy EARNote3 67 mJ
Channel dissipation PchNote2 100 W
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C
Notes: 1. PW ≤ 10ms, duty cycle ≤ 1 %
2. Value at Tc = 25°C
3. Value at Tch = 25°C, Rg ≥ 50 Ω
R07DS0409EJ0400
(Previous: REJ03G0414-0300)
Rev.4.00
May 16, 2011
2SK3210(L), 2SK3210(S) Preliminary
R07DS0409EJ0400 Rev.4.00 Page 2 of 7
May 16, 2011
Electrical Characteristics
(Ta = 25°C)
Item Symbol Min Typ Max Unit Test Conditions
Drain to source breakdown voltage V(BR)DSS 150 — — V ID = 10 mA, VGS = 0
Gate to source breakdown voltage V(BR)GSS ±20 — — V IG = ±100 μA, VDS = 0
Gate to source leak current IGSS — — ±10 μA VGS = ±16 V, VDS = 0
Zero gate voltage drain current IDSS — — 10 μA VDS = 150 V, VGS = 0
Gate to source cutoff voltage VGS(off) 1.0 — 2.5 V VDS = 10 V, ID = 1 mA
RDS(on) — 40 45 mΩ I
D = 15 A, VGS = 10 V Note4
Static drain to source on state
resistance RDS(on) — 45 63 mΩ I
D = 15 A, VGS = 4 VNote4
Forward transfer admittance |yfs| 18 30 — S ID = 15 A, VDS = 10 VNote4
Input capacitance Ciss — 2600 — pF
Output capacitance Coss — 820 — pF
Reverse transfer capacitance Crss — 350 — pF
VDS = 10 V, VGS = 0
f = 1MHz
Turn-on delay time td(on) — 25 — ns
Rise time tr — 180 — ns
Turn-off delay time td(off) — 600 — ns
Fall time tf — 280 — ns
VGS = 10 V, ID= 15 A
RL = 2 Ω
Body–drain diode forward voltage VDF — 0.91 — V IF = 30 A, VGS = 0
Body–drain diode reverse recovery
time
trr — 110 — ns
IF = 30 A, VGS = 0
diF/dt = 50 A/μs
Notes: 4. Pulse test
2SK3210(L), 2SK3210(S) Preliminary
R07DS0409EJ0400 Rev.4.00 Page 3 of 7
May 16, 2011
Main Characteristics
160
120
80
40
050 100 150 200
300
100
10
0.1 0.3 1310 300100
50
40
30
20
10
0246810
50
40
30
20
10
012345
0.1
1
V
GS
= 2.5 V
5 V
25°C
75°C
500
0.3
3
30
0.05 30 1000
10 μs
1 ms
100
μ
s
DC Operation
Tc = 25°C)
Ta = 25°C
PW = 10 ms(1shot)
4 V
10 V
Tc = –25°C
3 V
V
DS
= 10 V
Pulse Test
Drain to Source Voltage V
DS
(V)
Maximum Safe Operation Area
Drain to Source Voltage V
DS
(V)
Drain Current I
D
(A)
Typical Output Characteristics
Gate to Source Voltage V
GS
(V)
Typical Transfer Characteristics
Channel Dissipation Pch (W)
Case Temperature Tc (°C)
Power vs. Temperature Derating
Drain Current I
D
(A) Drain Current I
D
(A)
2.0
1.6
1.2
0.8
0.4
048
12 16 20 50 100
120
2
1000
200
500
100
20
10
50
10 A
I
D
= 20 A
5 A
510
V
GS
= 4 V
10 V
Pulse Test
Pulse Test
Pulse Test
Gate to Source Voltage V
GS
(V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
Drain to Source Voltage V
DS(on)
(V)
Drain Current I
D
(A)
Drain to Source On State Resistance
R
DS(on)
(mΩ)
Static Drain to Source on State Resistance
vs. Drain Current
Operation in
this area is
limited by R
DS(on)
2SK3210(L), 2SK3210(S) Preliminary
R07DS0409EJ0400 Rev.4.00 Page 4 of 7
May 16, 2011
250
200
150
100
50
–40 0 40 80 120 160
0
0.1 0.2 1520
30
1
3
0.3
0.1
10
10
ID = 20 A
VGS = 4 V
10 V
5, 10 A
100
0.5 250 100
25°C
Tc = –25°C
75°C
5, 10 A
20 A
Pulse Test
VDS = 10 V
Pulse Test
Case Temperature Tc (°C)
Drain to Source On State Resistance
RDS(on) (mΩ)
Static Drain to Source on State Resistance
vs. Temperature
Drain Current ID (A)
Forward Transfer Admittance vs.
Drain Current
Forward Transfer Admittance |yfs| (S)
0.1 1 3 10 1000.3 30 01020304050
10000
1000
3000
300
10
30
100
500
400
300
200
100
0
20
16
12
8
4
40 80 120 160 200
0
5000
500
200
100
50
0.1 0.2 1 5 10
1000
200
100
20
50
10
500
ID = 30A
VGS
VDS
20
10
0.5 2 20
VDD = 100 V
50 V
25 V
VDD = 100 V
50 V
25 V
VGS = 0
f = 1 MHz
Ciss
Coss
Crss
1000
tr
VGS = 10 V, VDD = 30 V
PW = 5 μs, duty < 1 %
tf
td(on)
td(off)
50
2000
di / dt = 50 A / μs
VGS = 0, Ta = 25°C
Reverse Drain Current IDR (A)
Reverse Recovery Time trr (ns)
Body-Drain Diode Reverse
Recovery Time
Drain to Source Voltage VDS (V)
Typical Capacitance vs.
Drain to Source Voltage
Gate Charge Qg (nc)
Drain to Source Voltage VDS (V)
Gate to Source Voltage VGS (V)
Dynamic Input Characteristics
Drain Current ID (A)
Switching Time t (ns)
Switching Characteristics
Capacitance C (pF)
2SK3210(L), 2SK3210(S) Preliminary
R07DS0409EJ0400 Rev.4.00 Page 5 of 7
May 16, 2011
00.4 0.8 1.2 1.6 2.0 25 50 75 100 125 150
0
VGS
= 10 V
50
40
30
20
10
IAP
= 30 A
VDD
= 50 V
duty < 0.1 %
Rg > 50 Ω
D. U. T
Rg
I
Monitor
AP
V
Monitor
DS
V
DD
50Ω
Vin
15 V
0
I
D
V
DS
I
AP
V
(BR)DSS
L
V
DD
EAR
= × L × IAP
2
×
2
1V
V – V
DSS
DSS DD
100
80
60
40
20
0, –5 V
5 V
Pulse Test
Source to Drain Voltage VSD (V)
Reverse Drain Current IDR (A)
Reverse Drain Current vs.
Source to Drain Voltage
Channel Temperature Tch (°C)
Repetitive Avalanche Energy E
AR
(mJ)
Maximum Avalanche Energy vs.
Channel Temperature Derating
Avalanche Test Circuit Avalanche Waveform
Pulse Width PW (s)
Normalized Transient Thermal Impedance
γs (t)
Normalized Transient Thermal Impedance vs. Pulse Width
3
1
0.3
0.1
0.03
0.01
10 μ100 μ1 m 10 m 100 m 1 10
DM
P
PW
T
D = PW
T
θch – c(t) = γs (t) × θch – c
θch – c = 1.25°C/W, Tc = 25°C
Tc = 25°C
D = 1
0.5
0.2
0.1
0.05
0.02
0.01
1shot pulse
2SK3210(L), 2SK3210(S) Preliminary
R07DS0409EJ0400 Rev.4.00 Page 6 of 7
May 16, 2011
Vin Monitor
D.U.T.
Vin
10 V
R
L
V
= 30 V
DD
tr
td(on)
Vin
90% 90%
10%
10%
Vout
td(off)
Vout
Monitor
50Ω
90%
10%
t
f
Switching Time Test Circuit Switching Time Waveform
2SK3210(L), 2SK3210(S) Preliminary
R07DS0409EJ0400 Rev.4.00 Page 7 of 7
May 16, 2011
Package Dimensions
• 2SK3210(L)
10.2 ± 0.3
0.86
0.76 ± 0.1
2.54 ± 0.5
2.54 ± 0.5
+ 0.2
– 0.1
1.3 ± 0.2
4.44 ± 0.2
1.3 ± 0.15
2.49 ± 0.2
0.4 ± 0.1
11.0 ± 0.5
8.6 ± 0.3
10.0
11.3 ± 0.5
+ 0.3
– 0.5
(1.4)
1.37 ± 0.2
Previous Code
PRSS0004AE-A
LDPAK(L) / LDPAK(L)V
MASS[Typ.]
1.40g⎯
RENESAS CodeJEITA Package Code
Unit: mm
Package Name
LDPAK(L)
• 2SK3210(S)
10.2 ± 0.3
1.37 ± 0.2
(1.5)
(1.4)
8.6 ± 0.3
10.0 + 0.3
– 0.5
4.44 ± 0.2
1.3 ± 0.15
0.1+ 0.2
– 0.1
0.4 ± 0.1
2.49 ± 0.2
0.86 + 0.2
– 0.1
2.54 ± 0.5
2.54 ± 0.5
1.3 ± 0.2
3.0+ 0.3
– 0.5
(1.5)
7.8
6.6
2.2
1.7
7.8
7.0
SC-83 1.30g
MASS[Typ.]
LDPAK(S)-(1) / LDPAK(S)-(1)V
PRSS0004AE-B
RENESAS CodeJEITA Package Code Previous Code
Unit: mm
Package Name
LDPAK(S)-(1)
Ordering Information
Orderable Part Number Quantity Shipping Container
2SK3210L-E 300 pcs. Box (Tube)
2SK3210STL-E 1000 pcs. Taping
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