ON Semiconductor SWITCHMODE Series NPN Silicon Power Transistors 2N6547 The 2N6547 transistor is designed for high-voltage, high-speed, power switching in inductive circuits where fall time is critical. They are particularly suited for 115 and 220 volt line operated switch-mode applications such as: 15 AMPERE NPN SILICON POWER TRANSISTORS 300 and 400 VOLTS 175 WATTS * * * * Switching Regulators PWM Inverters and Motor Controls Solenoid and Relay Drivers Deflection Circuits Specification Features * High Temperature Performance Specified for: CASE 1-07 TO-204AA (TO-3) Reversed Biased SOA with Inductive Loads Switching Times with Inductive Loads Saturation Voltages Leakage Currents IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIII IIIIIII IIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIII IIIIIII IIIIIIII IIII IIIIIIIIIIIIIIIII IIIIIII IIIIIIII IIII IIIIIIIIIIIIIIIII IIIIIII IIIIIIII IIII IIIIIIIIIIIIIIIII IIIIIII IIIIIIII IIII IIIIIIIIIIIIIIIII IIIIIII IIIIIIII IIII IIIIIIIIIIIIIIIII IIIIIII IIIIIIII IIII IIIIIIIIIIIIIIIII IIIIIII IIIIIIII IIII IIIIIIIIIIIIIIIII IIIIIII IIIIIIII IIII IIIIIIIIIIIIIIIII IIIIIII IIIIIIII IIII IIIIIIIIIIIIIIIII IIIIIII IIIIIIII IIII IIIIIIIIIIIIIIIII IIIIIII IIIIIIII IIII IIIIIIIIIIIIIIIII IIIIIII IIIIIIII IIII IIIIIIIIIIIIIIIII IIIIIII IIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIII IIIIIII IIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIII IIIIIII IIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIII IIIIIII IIIIIIII IIII IIIIIIIIIIIIIIIII IIIIIII IIIIIIII IIII IIIIIIIIIIIIIIIII IIIIIII IIIIIIII IIII MAXIMUM RATINGS (1) Rating Symbol Value Unit Collector-Emitter Voltage VCEO(sus) 400 Vdc Collector-Emitter Voltage VCEX(sus) 450 Vdc Collector-Emitter Voltage VCEV 850 Vdc Emitter Base Voltage VEB 9.0 Vdc Collector Current -- Continuous -- Peak (2) IC ICM 15 30 Adc Base Current -- Continuous -- Peak (2) IB IBM 10 20 Adc Emitter Current -- Continuous -- Peak (2) IE IEM 25 35 Adc Total Power Dissipation @ TC = 25C @ TC = 100C Derate above 25C PD Operating and Storage Junction Temperature Range Watts 175 100 1.0 W/C TJ, Tstg -65 to +200 C Symbol Max Unit RJC 1.0 C/W TL 275 C THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Maximum Lead Temperature for Soldering Purposes: 1/8 from Case for 5 Seconds Semiconductor Components Industries, LLC, 2001 April, 2001 - Rev. 6 1 Publication Order Number: 2N6547/D 2N6547 IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III *ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic Symbol Min Max 300 400 -- -- 350 450 200 300 -- -- -- -- -- -- 1.0 4.0 Unit OFF CHARACTERISTICS (1) Collector-Emitter Sustaining Voltage (IC = 100 mA, IB = 0) VCEO(sus) 2N6546 2N6547 Collector-Emitter Sustaining Voltage (IC = 8.0 A, Vclamp = Rated VCEX, TC = 100C) Vdc VCEX(sus) 2N6546 2N6547 2N6546 2N6547 (IC = 15 A, Vclamp = Rated VCEO = 100 V, TC = 100C) Vdc Collector Cutoff Current (VCEV = Rated Value, VBE(off) = 1.5 Vdc) (VCEV = Rated Value, VBE(off) = 1.5 Vdc, TC = 100C) ICEV mAdc Collector Cutoff Current (VCE = Rated VCEV, RBE = 50 , TC = 100C) ICER -- 5.0 mAdc Emitter Cutoff Current (VEB = 9.0 Vdc, IC = 0) IEBO -- 1.0 mAdc IS/b 0.2 -- Adc 12 6.0 60 30 -- -- -- 1.5 5.0 2.5 -- -- 1.6 1.6 fT 6.0 28 MHz Cob 125 500 pF SECOND BREAKDOWN Second Breakdown Collector Current with base forward biased t = 1.0 s (non-repetitive) (VCE = 100 Vdc) ON CHARACTERISTICS (1) DC Current Gain (IC = 5.0 Adc, VCE = 2.0 Vdc) (IC = 10 Adc, VCE = 2.0 Vdc) hFE Collector-Emitter Saturation Voltage (IC = 10 Adc, IB = 2.0 Adc) (IC = 15 Adc, IB = 3.0 Adc) (IC = 10 Adc, IB = 2.0 Adc, TC = 100C) VCE(sat) Base-Emitter Saturation Voltage (IC = 10 Adc, IB = 2.0 Adc) (IC = 10 Adc, IB = 2.0 Adc, TC = 100C VBE(sat) -- Vdc Vdc DYNAMIC CHARACTERISTICS Current-Gain -- Bandwidth Product (IC = 500 mAdc, VCE = 10 Vdc, ftest = 1.0 MHz) Output Capacitance (VCB = 10 Vdc, IE = 0, ftest = 1.0 MHz) http://onsemi.com 2 2N6547 IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIII IIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIII IIIIIIIIIIIIIII IIIII III IIII III IIIIIIII IIIIIIIIIIIIIII IIIII III IIII III IIIIIIII IIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIII III IIII III IIIIIIII IIIIIIIIIIIIIII IIIII IIIIIIII IIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIII IIIIIIIIIIIIIII IIIII III IIII III IIIIIIII IIIIIIIIIIIIIII IIIII IIIIII III III IIII IIIIIIII IIIIIIIIIIIIIII IIIII IIIIII III IIIIIIII IIIIIIIIIIIIIII IIIII IIIIII III IIIIIIII IIIIIIIIIIIIIII IIIII IIIIII III SWITCHING CHARACTERISTICS Resistive Load Delay Time Rise Time Storage Time td -- 0.05 s tr -- 1.0 s ts -- 4.0 s tf -- 0.7 s (IC = 10 A( A(pk), k), Vclam clamp = Rated VCEX, IB1 = 2.0 A, VBE(off) = 5.0 Vdc, TC = 100C) ts -- 5.0 s tf -- 1.5 s (IC = 10 A( A(pk), k), Vclam clamp = Rated VCEX, IB1 = 2.0 A, VBE(off) = 5.0 Vdc, TC = 25C) ts 2.0 s tf 0.09 s (VCC = 250 V, IC = 10 A, IB1 = IB2 = 2.0 2 0 A, A tp = 100 s, s Duty Cycle 2.0%) Fall Time Inductive Load, Clamped Storage Time Fall Time Typical Storage Time Fall Time *Indicates JEDEC Registered Data. (1) Pulse Test: Pulse Width = 300 s, Duty Cycle = 2%. http://onsemi.com 3 2N6547 TYPICAL ELECTRICAL CHARACTERISTICS hFE, DC CURRENT GAIN 70 VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) 100 TJ = 150C 50 25C 30 20 -55C 10 VCE = 2.0 V VCE = 10 V 7.0 5.0 0.2 0.3 0.5 1.0 2.0 3.0 5.0 7.0 IC, COLLECTOR CURRENT (AMP) 20 10 2.0 TJ = 25C 1.6 1.2 IC = 2.0 A 1.0 0.6 VBE(on) @ VCE = 2.0 V 0.4 0.2 VCE(sat) @ IC/IB = 5 0 0.2 0.3 0.5 3.0 k 2.0 k 1.0 2.0 3.0 5.0 7.0 10 20 0.4 0 0.07 0.1 2.5 2.0 *APPLIES FOR IC/IB 1.5 1.0 25C to 150C *VC for VCE(sat) 0.5 hFE@VCE 2.0V 3 0 -55C to 25C -0.5 25C to 150C -1.0 VB for VBE -1.5 -55C to 25C -2.0 -2.5 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 Figure 3. "On" Voltages Figure 4. Temperature Coefficients tr 10 k 7.0 k 5.0 k VCC = 250 V IC/IB = 5.0 TJ = 25C 20 ts 3.0 k 300 200 30 0.02 5.0 7.0 IC, COLLECTOR CURRENT (AMP) 1.0 k 700 500 100 70 50 2.0 3.0 0.2 0.3 0.5 0.7 1.0 IB, COLLECTOR CURRENT (AMP) IC, COLLECTOR CURRENT (AMP) t, TIME (ns) t, TIME (ns) V, TEMPERATURE COEFFICIENTS (mV/C) V, VOLTAGE (VOLTS) TJ = 25C VBE(sat) @ IC/IB = 5.0 15 A Figure 2. Collector Saturation Region 1.4 0.8 10 A 0.8 Figure 1. DC Current Gain 1.2 5.0 A td @ VBE(off) = 5.0 V 2.0 k 1.0 k 700 tf 500 300 VCC = 250 V IC/IB = 5.0 IB1 = IB2 TJ = 25C 200 0.05 5.0 0.1 0.2 1.0 2.0 0.5 IC, COLLECTOR CURRENT (AMP) 10 100 20 0.02 Figure 5. Turn-On Time 0.05 0.1 0.2 0.5 1.0 2.0 5.0 IC, COLLECTOR CURRENT (AMP) Figure 6. Turn-Off Time http://onsemi.com 4 10 20 2N6547 MAXIMUM RATED SAFE OPERATING AREAS 20 10 ms 20 10 5.0 ms 5.0 1.0 ms 100 s dc 2.0 1.0 0.5 IC, COLLECTOR CURRENT (AMP) IC, COLLECTOR CURRENT (AMP) 50 TC = 25C 0.2 0.1 0.05 BONDING WIRE LIMITED THERMAL LIMIT (SINGLE PULSE) SECOND BREAKDOWN LIMIT 0.02 2N6546 2N6547 0.01 CURVES APPLY BELOW RATED VCEO 0.005 50 70 100 200 300 400 5.0 7.0 10 20 30 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) TURN OFF LOAD LINE BOUNDARY FOR 2N6547. FOR 2N6546, VCEO AND VCEX ARE 100 VOLTS LESS. 16 12 VCEX(sus) 8.0 8.0 V 4.0 0 0 POWER DERATING FACTOR (%) SECOND BREAKDOWN DERATING 60 THERMAL DERATING 40 20 0 40 80 120 160 TC, CASE TEMPERATURE (C) 200 r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) Figure 9. Power Derating 1.0 0.7 0.5 0.3 0.2 500 There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC - VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 7 is based on TC = 25C; TJ(pk) is variable depending on power level. Second breakdown pulse limits are valid for duty cycles to 10% but must be derated when TC 25C. Second breakdown limitations do not derate the same as thermal limitations. Allowable current at the voltages shown on Figure 7 may be found at any case temperature by using the appropriate curve on Figure 9. TJ(pk) may be calculated from the data in Figure 10. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. 100 0 100 400 200 300 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 8. Reverse Bias Safe Operating Area Figure 7. Forward Bias Safe Operating Area 80 VCEO(sus) VCEX(sus) VBE(off) 5 V TC 100C D = 0.5 0.2 0.1 0.1 0.07 0.05 P(pk) ZJC (t) = r(t) RJC RJC = 1.0C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) ZJC(t) 0.05 0.02 0.03 0.02 0.01 0.01 0.01 0.02 SINGLE PULSE 0.05 0.1 0.2 0.5 1.0 2.0 5.0 t, TIME (ms) 10 Figure 10. Thermal Response http://onsemi.com 5 20 50 t1 t2 DUTY CYCLE, D = t1/t2 100 200 500 1.0 k 2N6547 PACKAGE DIMENSIONS CASE 1-07 TO-204AA (TO-3) ISSUE Z A N C -T- E D SEATING PLANE K 2 PL 0.13 (0.005) U T Q M M Y M -Y- L V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. ALL RULES AND NOTES ASSOCIATED WITH REFERENCED TO-204AA OUTLINE SHALL APPLY. 2 H G B M T Y 1 -Q- 0.13 (0.005) M DIM A B C D E G H K L N Q U V INCHES MIN MAX 1.550 REF --1.050 0.250 0.335 0.038 0.043 0.055 0.070 0.430 BSC 0.215 BSC 0.440 0.480 0.665 BSC --0.830 0.151 0.165 1.187 BSC 0.131 0.188 STYLE 1: PIN 1. BASE 2. EMITTER CASE: COLLECTOR http://onsemi.com 6 MILLIMETERS MIN MAX 39.37 REF --26.67 6.35 8.51 0.97 1.09 1.40 1.77 10.92 BSC 5.46 BSC 11.18 12.19 16.89 BSC --21.08 3.84 4.19 30.15 BSC 3.33 4.77 2N6547 Notes http://onsemi.com 7 2N6547 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. 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