DSA50C100HB Schottky Diode Gen VRRM = 100 V I FAV = 2x VF = 25 A 0.72 V High Performance Schottky Diode Low Loss and Soft Recovery Common Cathode Part number DSA50C100HB Backside: cathode 1 2 3 Features / Advantages: Applications: Package: TO-247 Very low Vf Extremely low switching losses Low Irm values Improved thermal behaviour High reliability circuit operation Low voltage peaks for reduced protection circuits Low noise switching Rectifiers in switch mode power supplies (SMPS) Free wheeling diode in low voltage converters Industry standard outline RoHS compliant Epoxy meets UL 94V-0 IXYS reserves the right to change limits, conditions and dimensions. (c) 2013 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20131031a DSA50C100HB Ratings Schottky Conditions Symbol VRSM Definition max. non-repetitive reverse blocking voltage TVJ = 25C max. 100 Unit V VRRM max. repetitive reverse blocking voltage TVJ = 25C 100 V IR reverse current, drain current VR = 100 V TVJ = 25C 450 A VR = 100 V TVJ = 125C 5 mA TVJ = 25C 0.90 V 1.07 V 0.72 V VF IF = forward voltage drop I FAV average forward current VF0 threshold voltage rF slope resistance R thJC thermal resistance junction to case min. 25 A IF = 50 A IF = 25 A IF = 50 A TVJ = 125 C TC = 155C rectangular 0.90 V T VJ = 175 C 25 A TVJ = 175 C 0.45 V d = 0.5 for power loss calculation only R thCH thermal resistance case to heatsink Ptot total power dissipation I FSM max. forward surge current t = 10 ms; (50 Hz), sine; VR = 0 V TVJ = 45C CJ junction capacitance VR = TVJ = 25C IXYS reserves the right to change limits, conditions and dimensions. (c) 2013 IXYS all rights reserved typ. 7.3 m 0.95 K/W K/W 0.25 TC = 25C 12 V f = 1 MHz 160 440 289 Data according to IEC 60747and per semiconductor unless otherwise specified W A pF 20131031a DSA50C100HB Package Ratings TO-247 Symbol I RMS Definition Conditions RMS current per terminal min. TVJ virtual junction temperature T op operation temperature Tstg storage temperature -55 typ. max. 50 Unit A -55 175 C -55 150 C 150 C 1) Weight 6 MD mounting torque FC mounting force with clip Product Marking 0.8 1.2 Nm 20 120 N Part number D S A 50 C 100 HB IXYS Logo g = = = = = = = Diode Schottky Diode low VF Current Rating [A] Common Cathode Reverse Voltage [V] TO-247AD (3) XXXXXXXXX Part No. Zyyww Assembly Line abcd Assembly Code Date Code Ordering Standard Part Number DSA50C100HB Similar Part DSA50C100QB DSA60C100PB Equivalent Circuits for Simulation I V0 R0 Marking on Product DSA50C100HB Package TO-3P (3) TO-220AB (3) * on die level Delivery Mode Tube Code No. 502774 Voltage class 100 100 T VJ = 175 C Schottky V 0 max threshold voltage 0.45 V R 0 max slope resistance * 4.7 m IXYS reserves the right to change limits, conditions and dimensions. (c) 2013 IXYS all rights reserved Quantity 30 Data according to IEC 60747and per semiconductor unless otherwise specified 20131031a DSA50C100HB Outlines TO-247 A E A2 O P1 OP D2 S Q D1 D 2x E2 4 1 2 3 L1 E1 L 2x b2 b4 C 3x b A1 2x e 1 IXYS reserves the right to change limits, conditions and dimensions. (c) 2013 IXYS all rights reserved 2 Sym. Inches min. max. Millimeter min. max. A A1 A2 D E E2 e L L1 OP Q S b b2 b4 c D1 D2 E1 O P1 0.185 0.209 0.087 0.102 0.059 0.098 0.819 0.845 0.610 0.640 0.170 0.216 0.215 BSC 0.780 0.800 0.177 0.140 0.144 0.212 0.244 0.242 BSC 0.039 0.055 0.065 0.094 0.102 0.135 0.015 0.035 0.515 0.020 0.053 0.530 0.29 4.70 5.30 2.21 2.59 1.50 2.49 20.79 21.45 15.48 16.24 4.31 5.48 5.46 BSC 19.80 20.30 4.49 3.55 3.65 5.38 6.19 6.14 BSC 0.99 1.40 1.65 2.39 2.59 3.43 0.38 0.89 13.07 0.51 1.35 13.45 7.39 3 Data according to IEC 60747and per semiconductor unless otherwise specified 20131031a DSA50C100HB Schottky 70 10 60 1 150C 50 IF 40 [A] 30 1000 TVJ=175C 800 125C IR CT 600 0.1 100C [mA] 20 10 75C [pF] 400 0.01 TVJ = 150C 125C 25C 50C 0.001 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 TVJ = 25C 25C 200 0.0001 0 0 20 40 60 80 VR [V] VF [V] Fig. 1 Maximum forward voltage drop characteristics 0 20 40 60 80 100 VR [V] Fig. 2 Typ. reverse current IR vs. reverse voltage VR Fig. 3 Typ. junction capacitance CT vs. reverse voltage VR 70 80 70 60 DC 60 50 d = 0.5 IF(AV) 50 P(AV) 40 d= DC 0.5 0.33 0.25 0.17 0.08 40 [A] 100 [W] 30 30 20 20 10 10 0 0 0 50 100 150 200 0 10 20 TC [C] 30 40 50 60 70 IF(AV) [A] Fig. 4 Average forward current IF(AV) vs. case temperature TC Fig. 5 Forward power loss characteristics 1.0 0.8 0.6 ZthJC Single Pulse 0.4 Rthi [K/W] 0.026 0.172 0.227 0.435 0.09 [K/W] 0.2 0.0 0.0001 0.001 0.01 0.1 1 ti [s] 0.0005 0.011 0.072 0.34 1.5 Note: All curves are per diode 10 t [s] Fig. 6 Transient thermal impedance junction to case IXYS reserves the right to change limits, conditions and dimensions. (c) 2013 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20131031a