VS-P400 Series
www.vishay.com Vishay Semiconductors
Revision: 27-Jul-2018 2Document Number: 93755
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ON-STATE CONDUCTION
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum DC output current
at case temperature IOFull bridge circuits 40 A
80 °C
Maximum peak, one-cycle
non-repetitive on-state or
forward current
ITSM,
IFSM
t = 10 ms No voltage
reapplied
Sinusoidal half wave,
initial TJ = TJ maximum
385
A
t = 8.3 ms 400
t = 10 ms 100 % VRRM
reapplied
325
t = 8.3 ms 340
Maximum I2t for fusing I2t
t = 10 ms No voltage
reapplied
745
A2s
t = 8.3 ms 680
t = 10 ms 100 % VRRM
reapplied
530
t = 8.3 ms 480
Maximum I2t for fusing I2tt = 0.1 ms to 10 ms, no voltage reapplied
I2t for time tx = I2t · tx 7450 A2s
Low level value of threshold voltage VT(TO)1 (16.7 % x x IT(AV) < I < x IT(AV)), TJ = TJ maximum 0.83 V
High level value of threshold voltage VT(TO)2 (I > x IT(AV)), TJ = TJ maximum 1.03
Low level value of on-state slope resistance rt1 (16.7 % x x IT(AV) < I < x IT(AV)), TJ = TJ maximum 9.61 m
High level value of on-state slope resistance rt2 (I > x IT(AV)), TJ = TJ maximum 7.01
Maximum on-state voltage drop VTM ITM = x IT(AV) TJ = 25 °C 1.4 V
Maximum forward voltage drop VFM IFM = x IF(AV) TJ = 25 °C 1.4 V
Maximum non-repetitive rate of rise of
turned-on current dI/dt TJ = 125 °C from 0.67 VDRM
ITM = x IT(AV), Ig = 500 mA, tr < 0.5 μs, tp > 6 μs 200 A/μs
Maximum holding current IHTJ = 25 °C anode supply = 6 V, resistive load 130 mA
Maximum latching current IL250
BLOCKING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum critical rate of rise of
off-state voltage dV/dt TJ = 125 °C, exponential to 0.67 VDRM gate open 200 V/μs
Maximum peak reverse and off-state
leakage current at VRRM, VDRM
IRRM,
IDRM TJ = 125 °C, gate open circuit 10 mA
Maximum peak reverse leakage current IRRM TJ = 25 °C 100 μA
RMS isolation voltage VISOL 50 Hz, circuit to base, all terminals shorted,
TJ = 25 °C, t = 1 s 2500 V
TRIGGERING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum peak gate power PGM 8W
Maximum average gate power PG(AV) 2
Maximum peak gate current IGM 2A
Maximum peak negative gate voltage -VGM 10 V
Maximum gate voltage required to trigger VGT
TJ = - 40 °C
Anode supply =
6 V resistive load
3
VTJ = 25 °C 2
TJ = 125 °C 1
Maximum gate current required to trigger IGT
TJ = - 40 °C 90
mATJ = 25 °C 60
TJ = 125 °C 35
Maximum gate voltage that will not trigger VGD TJ = 125 °C, rated VDRM applied 0.2 V
Maximum gate current that will not trigger IGD 2mA