© Semiconductor Components Industries, LLC, 2008
September, 2008 − Rev. 4
1Publication Order Number:
2N6284/D
2N6284 (NPN); 2N6286,
2N6287 (PNP)
Preferred Device
Darlington Complementary
Silicon Power Transistors
These packages are designed for general−purpose amplifier and
low−frequency switching applications.
Features
•High DC Current Gain @ IC = 10 Adc −
hFE = 2400 (Typ) − 2N6284
= 4000 (Typ) − 2N6287
•Collector−Emitter Sustaining Voltage −
VCEO(sus) = 100 Vdc (Min)
•Monolithic Construction with Built−In Base−Emitter Shunt Resistors
•Pb−Free Packages are Available*
MAXIMUM RATINGS (Note 1)
Rating Symbol Value Unit
Collector−Emitter Voltage
2N6286
2N6284/87
VCEO 80
100
Vdc
Collector−Base Voltage
2N6286
2N6284/87
VCB 80
100
Vdc
Emitter−Base Voltage VEB 5.0 Vdc
Collector Current −Continuous
Peak
IC20
40
Adc
Base Current IB0.5 Adc
Total Power Dissipation @ TC = 25°C
Derate above 25°C
PD160
0.915
W
W/°C
Operating and Storage Temperature
Range
TJ, Tstg −65 to + 200 °C
THERMAL CHARACTERISTICS (Note 1)
Characteristic Symbol Max Unit
Thermal Resistance, Junction−to−Case RqJC 1.09 °C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Indicates JEDEC Registered Data.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
http://onsemi.com
20 AMPERE
COMPLEMENTARY SILICON
POWER TRANSISTORS
100 VOLTS, 160 WATTS
TO−204AA (TO−3)
CASE 1−07
STYLE 1
MARKING DIAGRAM
2N628x = Device Code
x = 4, 6 or 7
G= Pb−Free Package
A = Location Code
YY = Year
WW = Work Week
MEX = Country of Orgin
2N628xG
AYYWW
MEX
Device Package Shipping
ORDERING INFORMATION
2N6284 TO−3 100 Units/Tray
2N6284G TO−3
(Pb−Free)
100 Units/Tray
2N6286 TO−3 100 Units/Tray
2N6286G TO−3
(Pb−Free)
100 Units/Tray
2N6287 TO−3 100 Units/Tray
2N6287G TO−3
(Pb−Free)
100 Units/Tray
COLLECTOR
CASE
BASE
1
EMITTER 2
21
2N6284 (NPN); 2N6286, 2N6287 (PNP)
http://onsemi.com
2
25 50 100 125 200
Figure 1. Power Derating
TC, CASE TEMPERATURE (°C)
PD, POWER DISSIPATION (WATTS)
160
60
40
140
0 75 150
0
20
80
100
120
175
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) (Note 2)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Characteristic
ÎÎÎÎÎ
ÎÎÎÎÎ
Symbol
ÎÎÎ
ÎÎÎ
Min
ÎÎÎÎ
ÎÎÎÎ
Max
ÎÎÎ
ÎÎÎ
Unit
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
OFF CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector−Emitter Sustaining Voltage
(IC = 0.1 Adc, IB = 0) 2N6286
2N6284, 2N6287
ÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎ
VCEO(sus)
ÎÎÎ
ÎÎÎ
ÎÎÎ
80
100
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
−
−
ÎÎÎ
ÎÎÎ
ÎÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector Cutoff Current
(VCE = 40 Vdc, IB = 0)
(VCE = 50 Vdc, IB = 0)
ÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎ
ICEO
ÎÎÎ
ÎÎÎ
ÎÎÎ
−
−
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
1.0
1.0
ÎÎÎ
ÎÎÎ
ÎÎÎ
mAdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector Cutoff Current
(VCE = Rated VCB, VBE(off) = 1.5 Vdc)
(VCE = Rated VCB, VBE(off) = 1.5 Vdc, TC = 150_C)
ÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎ
ICEX
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
−
−
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
0.5
5.0
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
mAdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Emitter Cutoff Current
(VBE = 5.0 Vdc, IC = 0)
ÎÎÎÎÎ
ÎÎÎÎÎ
IEBO
ÎÎÎ
ÎÎÎ
−
ÎÎÎÎ
ÎÎÎÎ
2.0
ÎÎÎ
ÎÎÎ
mAdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ON CHARACTERISTICS (Note 3)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
DC Current Gain
(IC = 10 Adc, VCE = 3.0 Vdc)
(IC = 20 Adc, VCE = 3.0 Vdc)
ÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎ
hFE
ÎÎÎ
ÎÎÎ
ÎÎÎ
750
100
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
18,000
−
ÎÎÎ
ÎÎÎ
ÎÎÎ
−
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector−Emitter Saturation Voltage
(IC = 10 Adc, IB = 40 mAdc)
(IC = 20 Adc, IB = 200 mAdc)
ÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎ
VCE(sat)
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
−
−
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
2.0
3.0
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Base−Emitter On Voltage
(IC = 10 Adc, VCE = 3.0 Vdc)
ÎÎÎÎÎ
ÎÎÎÎÎ
VBE(on)
ÎÎÎ
ÎÎÎ
−
ÎÎÎÎ
ÎÎÎÎ
2.8
ÎÎÎ
ÎÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Base−Emitter Saturation Voltage
(IC = 20 Adc, IB = 200 mAdc)
ÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎ
VBE(sat)
ÎÎÎ
ÎÎÎ
ÎÎÎ
−
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
4.0
ÎÎÎ
ÎÎÎ
ÎÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
DYNAMIC CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Magnitude of Common Emitter Small−Signal Short−Circuit
Forward Current Transfer Ratio
(IC = 10 Adc, VCE = 3.0 Vdc, f = 1.0 MHz)
ÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎ
|hfe|
ÎÎÎ
ÎÎÎ
ÎÎÎ
4.0
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
−
ÎÎÎ
ÎÎÎ
ÎÎÎ
MHz
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 0.1 MHz) 2N6284
2N6286, 2N6287
ÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎ
Cob
ÎÎÎ
ÎÎÎ
ÎÎÎ
−
−
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
400
600
ÎÎÎ
ÎÎÎ
ÎÎÎ
pF
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Small−Signal Current Gain
(IC = 10 Adc, VCE = 3.0 Vdc, f = 1.0 kHz)
ÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎ
hfe
ÎÎÎ
ÎÎÎ
ÎÎÎ
300
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
−
ÎÎÎ
ÎÎÎ
ÎÎÎ
−
2. Indicates JEDEC Registered Data.
3. Pulse test: Pulse Width = 300 ms, Duty Cycle = 2%
2N6284 (NPN); 2N6286, 2N6287 (PNP)
http://onsemi.com
3
Figure 2. Switching Times Test Circuit
10
0.2
Figure 3. Switching Times
IC, COLLECTOR CURRENT (AMP)
t, TIME (s)μ
7.0
2.0
1.0
0.7
0.5
0.1 0.3 0.7 3.0 20
0.2
1.0 5.0
0.3
3.0
5.0
0.5 2.0 7.0
0
VCC
- 30 V
SCOPE
TUT
+ 4.0 V
tr, tf v 10 ns
DUTY CYCLE = 1.0%
RC
D1 MUST BE FAST RECOVERY TYPE e.g.,
1N5825 USED ABOVE IB [ 100 mA
MSD6100 USED BELOW IB [ 100 mA
25 ms
D1
51
RB & RC VARIED TO OBTAIN DESIRED CURRENT LEVELS
V2
APPROX
+ 8.0 V
V1
APPROX
- 12 V
[ 8.0 k [ 50
FOR td AND tr, D1 IS DISCONNECTED
AND V2 = 0
FOR NPN TEST CIRCUIT REVERSE ALL POLARITIES
RB
10
td @ VBE(off) = 0 V
tf
ts
tr
2N6284 (NPN)
2N6287 (PNP)
VCC = 30 Vdc
IC/IB = 250
IB1 = IB2
TJ = 25°C
Figure 4. Thermal Response
t, TIME OR PULSE WIDTH (ms)
1.0
0.01
0.01
0.7
0.5
0.3
0.2
0.1
0.07
0.05
0.03
0.02
0.02 0.03
r(t), EFFECTIVE TRANSIENT
THERMAL RESISTANCE (NORMALIZED)
0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 1000500
RqJC(t) = r(t) RqJC
RqJC = 1.09°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) - TC = P(pk) RqJC(t)
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
D = 0.5
SINGLE PULSE
0.2
0.05
0.1
0.02
0.01
0.3 3.0 30 300
2N6284 (NPN); 2N6286, 2N6287 (PNP)
http://onsemi.com
4
ACTIVE−REGION SAFE OPERATING AREA
50
Figure 5. 2N6284, 2N6287
20
2.0
0.05 50 100
0.2
5.0
0.5
IC, COLLECTOR CURRENT (AMP)
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
10
1.0
0.1
2.0 5.0 2010
0.1 ms
SECOND BREAKDOWN LIMITED
BONDING WIRE LIMITED
THERMAL LIMITATION @ TC = 25°C
SINGLE PULSE
TJ = 200°C
dc
5.0 ms
1.0 ms
0.5 ms
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC − VCE
limits of the transistor that must be observed for reliable
operation; i.e. the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 5 is based on TJ(pk) = 200_C; TC is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided
TJ(pk) < 200_C. TJ(pk) may be calculated from the data in
Figure 4. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
10,000
1.0
Figure 6. Small−Signal Current Gain
f, FREQUENCY (kHz)
10 2.0 5.0 10 20 50 100 200 1000
500
100
5000
hFE, SMALL-SIGNAL CURRENT GAIN
20
200
500
2000
1000
50
TJ = 25°C
VCE = 3.0 Vdc
IC = 10 A
1000
0.1
Figure 7. Capacitance
VR, REVERSE VOLTAGE (VOLTS)
100 1.0 2.0 5.0 20 10010
C, CAPACITANCE (PF)
500
300
200
Cib
Cob
500.2 0.5
2N6284 (NPN)
2N6287 (PNP)
TJ = 25°C
700
2N6284 (NPN)
2N6287 (PNP)
2N6284 (NPN); 2N6286, 2N6287 (PNP)
http://onsemi.com
5
Figure 8. DC Current Gain
IC, COLLECTOR CURRENT (AMP)
0.2 0.3 0.5 0.7 1.0 2.0 20
500
300
hFE, DC CURRENT GAIN
TJ = 150°C
25°C
-55°C
VCE = 3.0 V
200 7.0
NPN
2N6284
PNP
2N6287
20,000
5000
10,000
3000
2000
1000
3.0 5.0
IC, COLLECTOR CURRENT (AMP)
700
500
hFE, DC CURRENT GAIN
TJ = 150°C
25°C
-55°C
300
30,000
10,000
20,000
5000
3000
1000
7000
700
10
VCE = 3.0 V
0.2 0.3 0.5 0.7 1.0 2.0 207.03.0 5.0 10
7000
2000
Figure 9. Collector Saturation Region
VCE, COLLECTOR‐EMITTER VOLTAGE (VOLTS)
3.0
IB, BASE CURRENT (mA)
2.6
2.2
1.8
1.4
1.0
VCE, COLLECTOR‐EMITTER VOLTAGE (VOLTS)
3.0
IB, BASE CURRENT (mA)
0.5 1.0 2.0 3.0 5.0 7.0 50
2.6
2.2
1.8
1.4
IC = 5.0 A 10 A 15 A
1.0 0.7 3020 0.5 1.0 2.0 3.0 5.0 7.0 500.7 3020
IC = 5.0 A 10 A 15 A
10 10
TJ = 25°CTJ = 25°C
IC, COLLECTOR CURRENT (AMP)
VBE(sat) @ IC/IB = 250
V, VOLTAGE (VOLTS)
Figure 10. “On” Voltages
IC, COLLECTOR CURRENT (AMP)
V, VOLTAGE (VOLTS)
VBE(sat) @ IC/IB = 250
VCE(sat) @ IC/IB = 250
TJ = 25°C
VBE @ VCE = 3.0 V
VCE(sat) @ IC/IB = 250
TJ = 25°C
0.2 0.3 0.5 0.7 1.0 2.0 207.03.0 5.0
3.0
2.5
2.0
1.5
1.0
0.5
3.0
2.5
2.0
1.5
1.0
0.5 10 0.2 0.3 0.5 0.7 1.0 2.0 207.03.0 5.0 10
VBE @ VCE = 3.0 V
2N6284 (NPN); 2N6286, 2N6287 (PNP)
http://onsemi.com
6
+5.0
Figure 11. Temperature Coefficients
IC, COLLECTOR CURRENT (AMP)
0.2 0.3 1.0 2.0 3.0 5.0 7.0 20
V, TEMPERATURE COEFFICIENTS (mV/ C)°θ
+4.0
+3.0
+1.0
0
-4.0
-1.0
-2.0
-3.0
-5.0
qVB for VBE
*qVC for VCE(sat)
-55°C to + 25°C
25°C to 150°C
25°C to + 150°C
0.5 0.7
+5.0
IC, COLLECTOR CURRENT (AMP)
V, TEMPERATURE COEFFICIENTS (mV/ C)°θ
+4.0
+3.0
+1.0
0
-4.0
-1.0
-2.0
-3.0
-5.0
qVB for VBE
*qVC for VCE(sat)
NPN
2N6284
PNP
2N6287
*APPLIES FOR IC/IB ≤
hFE@VCE +3.0V
250
-55°C to + 25°C
*APPLIES FOR IC/IB ≤
hFE@VCE +3.0V
250
-55°C to + 25°C
25°C to 150°C
25°C to + 150°C
-55°C to + 25°C
10 0.2 0.3 1.0 2.0 3.0 5.0 7.0 200.5 0.7 10
+2.0 +2.0
REVERSE FORWARD
105
Figure 12. Collector Cut−Off Region
VBE, BASE-EMITTER VOLTAGE (VOLTS)
102
101
100
, COLLECTOR CURRENT (A)μIC
10-1
-0.2 -0.40+0.2+0.4+0.6
VCE = 30 V
TJ = 150°C
100°C
25°C
REVERSE FORWARD
103
104
-0.6 -0.8 -1.0 -1.2 -1.4
103
VBE, BASE-EMITTER VOLTAGE (VOLTS)
100
10-1
10-2
, COLLECTOR CURRENT (A)μIC
10-3
101
102
+0.2 +0.40-0.2-0.4-0.6 +0.6 +0.8 +1.0 +1.2 + 1.4
VCE = 30 V
TJ = 150°C
100°C
25°C
Figure 13. Darlington Schematic
NPN
2N6284
PNP
2N6287
BASE
COLLECTOR
EMITTER
[ 8.0 k [ 60
BASE
COLLECTOR
EMITTER
[ 8.0 k [ 60
2N6284 (NPN); 2N6286, 2N6287 (PNP)
http://onsemi.com
7
PACKAGE DIMENSIONS
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. ALL RULES AND NOTES ASSOCIATED WITH
REFERENCED TO-204AA OUTLINE SHALL APPLY.
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A1.550 REF 39.37 REF
B--- 1.050 --- 26.67
C0.250 0.335 6.35 8.51
D0.038 0.043 0.97 1.09
E0.055 0.070 1.40 1.77
G0.430 BSC 10.92 BSC
H0.215 BSC 5.46 BSC
K0.440 0.480 11.18 12.19
L0.665 BSC 16.89 BSC
N--- 0.830 --- 21.08
Q0.151 0.165 3.84 4.19
U1.187 BSC 30.15 BSC
V0.131 0.188 3.33 4.77
A
N
E
C
K
−T−SEATING
PLANE
2 PL
D
M
Q
M
0.13 (0.005) Y M
T
M
Y
M
0.13 (0.005) T
−Q−
−Y−
2
1
U
L
GB
V
H
TO−204 (TO−3)
CASE 1−07
ISSUE Z
STYLE 1:
PIN 1. BASE
2. EMITTER
CASE: COLLECTOR
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