BA 892
Semiconductor Group Au -03-19981
Silicon Rf Switching Diode
Preliminary data
• For VHF band switching
in TV / VTR tuners
• Low forward resistance,
small capacitance,
small inductance
1
VES05991
2
Type Marking Ordering Code Pin Configuration Package
BA 892 A Q62702-A1214 1 = C 2 = A SCD-80
Maximum Ratings
Parameter Symbol Value Unit
Diode reverse voltage 35 V
V
R
Forward current mA
I
F100
-55 ...+125 °COperating temperature range
T
op
Storage temperature
T
stg -55 ...+150
Thermal Resistance K/W
Junction - ambient 1)
R
thJA ≤ 450
1) Package mounted on alumina 15mm x 16.7mm x 0.7mm
Semiconductor Group 1 1998-11-01
BA 892
Semiconductor Group Au -03-19982
Electrical Characteristics at
T
A = 25°C, unless otherwise specified.
Parameter Values UnitSymbol
min. max.typ.
DC characteristics
I
R- - µAReverse current
V
R = 20 V 20
V
F- - 1 VForward voltage
I
F = 100 mA
AC characteristics pF
C
T
Diode capacitance
V
R = 1 V,
f
= 1 MHz
V
R = 3 V,
f
= 1 MHz
0.92
0.85
1.3
1.1
0.65
0.6
Ω
Forward resistance
I
F = 3 mA,
f
= 100 MHz
I
F = 10 mA,
f
= 100 MHz
-
-
0.45
0.36
r
f
0.7
0.5
kΩ
Reverse resistance
V
R = 1 V,
f
= 100 MHz 1/
g
p-100-
nHSeries inductance
L
s- 0.6 -
Semiconductor Group 2 1998-11-01
BA 892
Semiconductor Group Au -03-19983
Diode capacitance
C
T =
f
(
V
R)
f
= 1MHz
0
0.0
EHD07009
C
T
R
V
10 20 V 30
0.4
0.8
1.2
1.6
pF
2.0
Forward resistance
r
f =
f
(
I
F)
f
= 100MHz
10
EHD07010
r
f
F
Ι
-1 0
10
1
10
2
10mA
-1
10
Ω
10
1
10
0
Forward current
I
F =
f
(
V
F)
T
A = 25°C
0.5 0.6 0.7 0.8 0.9 V1.1
V
F
-2
10
-1
10
0
10
1
10
2
10
3
10
mA
Semiconductor Group 3 1998-11-01
