MICR UALITY SEMICONDUCTOR, INC IBR 25 Amp Fast Recovery Time Integrated Rectifiers 200 Nanosecond Reverse Recovery 100V, 200V, and 400V, Vary Ratings 150 Amps One Half Cycle Surge Current 2000V Minimum Circuit-To-Case Insulation VY Series Oy. f | hss dl + 7 a ey c Mivwable pressth depth iach Got-Hogative Bloch BeiHogative nd BatPesiters act Bei-Hegetws fed BetFesitine a or, WULUDIICATED Sted TOROUE-36 GICH-Povnds TO-3 OUTLINE THREE PHASE, PRESS MOUNTING SINGLE STUD MOUNTING FLANGE FULL WAVE BRIDGE LTR. INCHES MILLIMETERS | LTR. INCHES MILLIMETERS | LTR. INCHES MILLIMETERS | LTR. INCHES MILLIMETERS A 032 Typ. 81 G -830 Max. 21,08 M 120 3,05 T 2.250 57,15 B 1.0 Max. 25,4 H -930 Max. 23,62 N .34-.40 8,64-10,16 uU 4.125 28,58 Cc 187 Typ 4,75 | -7505-.7545 19.06-19,16 P -135 Max. 3,4 v -156 Dia. 3,96 0 25 Min. 6,35 J -875 22,23 Q 1.177-1.197 29,90-30,40 Ww 164 4,17 E 125 Typ. 3,18 K 1.10 Max. 27,94 R -525R Max. 3,34 x 375 9,35 F -110 Dia. 2,79 L 1.20 Max. 30,48 Ss .151-.161 Dia. 3,84-4,09 Y 50 12,70 Dimensional tolerance inches .XX' .Xxx~ 95 MAXIMUM RATINGS AT T, = 25C (unless otherwise specified) RATINGS SYMBOL VY 100X VY200X VY400X UNITS DC Blocking Voltage Vam Working Peak Reverse Voltage Vewe 100 200 400 Volts Peak Repetitive Reverse Voltage RRM Peak Reverse Voltage, 2 Cycle at 60Hz (non-rep) Vam (non-rep) 120 240 480 Volts RMS Reverse Voltage Vayamsy 70 140 280 Voits Peak Surge Current, 2 Cycle at 60Hz (non-rep) per diode (Fig. 2) Irom 150 Amps Avg. Forward Current T, = 100C (Fig. 1) I 25 Amps Junction Operating and Storage Temperature Range Ta, Tste - 65 to + 150 C NOTE: Case temperature (T,) is measured on bottom of case within .125 inches of center. ELECTRICAL CHARACTERISTICS AT T, = 25C (unless otherwise specified) CHARACTERISTICS SYMBOL UNITS Maximum Instantaneous Forward Voltage Drop at 25 Amps per diode (Fig. 3) Ven 1.8 Volts Maximum Reverse Recovery Time, |; = 1 Amp, tq = 2 AMD lan = 0.5 Amp . t. 200 nsec Maximum Reverse Current at Rated Vay and | 5 mA Te = 150C, per diode RM Thermal Resistance, Junction to Case Rese 1 C/W Insulation Strength, Circuit to Case, Min. 2000 Volts DC 35OC FORWARD CURRENT PEAK SURGE CUARENT (Per Diode) VS NUMBER VS CASE TEMPERATURE z OF CYCLES AT 60 Hz (SINE WAVE INPUT) 30 2 1000 = < a ~ a 25 = & VYJVYA 2 = VYB, VYC = ~ 20 VYD, VYH a & 2 2 150 ww x g 15 = 100 5 bE 2 oa w z s o w u 9 o 5 iad a 2 a vo x a 0 wo 10 0 20 40 60 80 100 :1200-140s: 160 1 10 60 100 CASE TEMPERATURE, Tc, (C) NUMBER OF CYCLES AT 60 Hz FIGURE 1 FIGURE 2 TYPICAL tNSTANTANEOUS FORWARD VOLTAGE OROP (Per Diode) VS OC FORWARD CURRENT 1 a a z 4 RECOVERY WAVE FORM Oo Ee | 2 FORWARD w CONDUCTION c $4 Q a WME = - Recovered Fa SWITCHING pea o 1 Conduction a 8 REVERSE RECOVERY CURRENT 0.1 0 02 04 #O6 O8 1.0 1.2 14 1.6 18 TYPICAL INSTANTANEOUS FORWARD VOLTAGE DROP, Vem. (VOLTS) FIGURE 3 FIGURE 4 CIRCUIT 100V 200V 400V ANY OF THE CIRCUITS SHOWN BELOW ARE AVAILABLE IN THE FULL WAVE BRIDGE V100X VY200X VY400X VY SERIES. SPECIFY BY AODING LETTERS van Bn, Cc, ETC., CENTER TAP VAIO VYAZ00x VvAa00X AFTER THE VY" IN THE PART NUMBER. SEE PART NUMBER 4100X SELECTION CHART. COMMON CATHODE CENTER TAP VYB100X VYB200X VYB400X wos wt oe THREE PHASE pos ato os 9D COMMON CATHODE VYC100X VYC200x VYC400X 7 } } } } } THREE PHASE COMMON ANODE VYD100X VYD200X vyYD400X *THREE PHASE we uae wee tuce FULL WAVE BRIDGE VYH100X VYH200X VYH400X e i . Assembly of VYG and VYD (100V, 200V, 400V) in single mounting flange. See Wye) drawing. NOTE: Devices have standard flag terminals as shown (.187 4.75mm). To order TO-3 Mount add suffix T' to part no. To order Single Stud Mount add suffix S to part no. NEG BLACK Li FIGURE 5 36