" ! !
(250 Volts Peak)
The MOC3010 Series consists of gallium arsenide infrared emitting diodes,
optically coupled to silicon bilateral switch and are designed for applications
requiring isolated triac triggering, low–current isolated ac switching, high
electrical isolation (to 7500 Vac peak), high detector standoff voltage, small
size, and low cost.
•
To order devices that are tested and marked per VDE 0884 requirements, the
suffix ”V” must be included at end of part number. VDE 0884 is a test option.
Recommended for 115 Vac(rms) Applications:
•Solenoid/Valve Controls
•Lamp Ballasts
•Interfacing Microprocessors to 115 Vac Peripherals
•Motor Controls
•Static ac Power Switch
•Solid State Relays
•Incandescent Lamp Dimmers
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Rating Symbol Value Unit
INFRARED EMITTING DIODE
Reverse Voltage VR3 Volts
Forward Current — Continuous IF60 mA
Total Power Dissipation @ TA = 25°C
Negligible Power in Transistor
Derate above 25°C
PD100
1.33
mW
mW/°C
OUTPUT DRIVER
Off–State Output Terminal Voltage VDRM 250 Volts
Peak Repetitive Surge Current
(PW = 1 ms, 120 pps) ITSM 1 A
Total Power Dissipation @ TA = 25°C
Derate above 25°CPD300
4mW
mW/°C
TOTAL DEVICE
Isolation Surge Voltage(1)
(Peak ac Voltage, 60 Hz, 1 Second Duration) VISO 7500 Vac(pk)
Total Power Dissipation @ TA = 25°C
Derate above 25°CPD330
4.4 mW
mW/°C
Junction Temperature Range TJ–40 to +100 °C
Ambient Operating Temperature RangeTA–40 to +85 °C
Storage Temperature RangeTstg –40 to +150 °C
Soldering Temperature (10 s) TL260 °C
1. Isolation surge voltage, VISO, is an internal device dielectric breakdown rating.
1.For this test, Pins 1 and 2 are common, and Pins 4, 5 and 6 are common.
GlobalOptoisolator
COUPLER SCHEMATIC
STANDARD THRU HOLE
1. ANODE
2. CATHODE
3. NC
4. MAIN TERMINAL
5. SUBSTRATE
DO NOT CONNECT
6. MAIN TERMINAL
1
2
3
6
5
4
61
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
INPUT LED
Reverse Leakage Current
(VR = 3 V) IR— 0.05 100 µA
Forward Voltage
(IF = 10 mA) VF— 1.15 1.5 Volts
OUTPUT DETECTOR (IF = 0 unless otherwise noted)
Peak Blocking Current, Either Direction
(Rated VDRM(1))IDRM — 10 100 nA
Peak On–State Voltage, Either Direction
(ITM = 100 mA Peak) VTM — 1.8 3 Volts
Critical Rate of Rise of Off–State Voltage (Figure 7, Note 2) dv/dt — 10 — V/µs
COUPLED
LED Trigger Current, Current Required to Latch Output
(Main Terminal Voltage = 3 V(3)) MOC3010
MOC3011
MOC3012
IFT —
—
—
8
5
3
15
10
5
mA
Holding Current, Either Direction IH— 100 — µA
1. Test voltage must be applied within dv/dt rating.
2. This is static dv/dt. See Figure 7 for test circuit. Commutating dv/dt is a function of the load–driving thyristor(s) only.
3. All devices are guaranteed to trigger at an IF value less than or equal to max IFT. Therefore, recommended operating IF lies between max
3. IFT (15 mA for MOC3010, 10 mA for MOC3011, 5 mA for MOC3012) and absolute max IF (60 mA).
–800
TYPICAL ELECTRICAL CHARACTERISTICS
TA = 25°C
Figure 1. LED Forward Voltage versus Forward Current
2
1.8
1.6
1.4
1.2
11 10 100 1000
IF, LED FORWARD CURRENT (mA)
VF, FORWARD VOLTAGE (VOLTS)
PULSE ONLY
PULSE OR DC
85
°
C
25
°
C
Figure 2. On–State Characteristics
–3 VTM, ON–STATE VOLTAGE (VOLTS)
I
–400
0
+400
+800
–2 –1 0 1 2 3
TM, ON-STATE CURRENT (mA)
TA = –40
°
C
MOC3010, MOC3011, MOC3012
0.7
Figure 3. Trigger Current versus Temperature
–40 TA, AMBIENT TEMPERATURE (
°
C)
0.9
1.1
1.3
1.5
–20 0 20 40 60 80
FT
NORMALIZED I
0.5 100
5
1PWin, LED TRIGGER WIDTH (
µ
s)
10
15
20
25
2 5 2010 50
0100
FT
I, NORMALIZED LED TRIGGER CURRENT
NORMALIZED TO:
PWin
q
100
µ
s
Figure 4. LED Current Required to Trigger versus
LED Pulse Width
2
40TA, AMBIENT TEMPERATURE (
°
C)
4
6
8
10
25 30 50 7060 80
µ
dv/dt, STATIC (V/
010090
12
STATIC dv/dt
CIRCUIT IN FIGURE 6
s)
Figure 5. dv/dt versus Temperature
+250
Vdc
PULSE
INPUT MERCURY
WETTED
RELAY
RTEST
CTEST
R = 10 k
Ω
X100
SCOPE
PROBE
D.U.T.
APPLIED VOLTAGE
WAVEFORM 158 V
0 VOLTS
t
RC
Vmax = 250 V
dv
ń
dt
+
0.63 Vmax
t
RC
+
158
t
RC
1. The mercury wetted relay provides a high speed repeated
pulse to the D.U.T.
2. 100x scope probes are used, to allow high speeds and
voltages.
3. The worst–case condition for static dv/dt is established by
triggering the D.U.T. with a normal LED input current, then
removing the current. The variable RTEST allows the dv/dt to be
gradually increased until the D.U.T. continues to trigger in
response to the applied voltage pulse, even after the LED
current has been removed. The dv/dt is then decreased until
the D.U.T. stops triggering.
t
RC is measured at this point and
recorded.
Figure 6. Static dv/dt Test Circuit
MOC3010, MOC3011, MOC3012
TYPICAL APPLICATION CIRCUITS
NOTE: This optoisolator should not be used to drive a load directly .
It is intended to be a trigger device only. Additional
information on the use of the MOC3010/3011/3012 is
available in Application Note AN–780A.
VCC Rin 1
2
6
4
180 RL
120 V
60 Hz
MOC3010
MOC3011
MOC3012
VCC Rin 1
2
6
4
180 120 V
60 Hz
MOC3010
MOC3011
MOC3012
2.4 k
0.1
µ
F C1
VCC Rin 1
2
6
4
180
ZL
120 V
60 Hz
MOC3010
MOC3011
MOC3012
1.2 k
0.2
µ
F C1
Figure 7. Resistive Load Figure 8. Inductive Load with Sensitive Gate Triac
(IGT
p
15 mA)
Figure 9. Inductive Load with Non–Sensitive Gate Triac
(15 mA
t
IGT
t
50 mA)
ZL
MOC3010, MOC3011, MOC3012
PACKAGE DIMENSIONS
THRU HOLE
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION L TO CENTER OF LEAD WHEN
FORMED PARALLEL.
6 4
1 3
–A–
–B–
SEATING
PLANE
–T–
4 PLF
K
C
N
G
6 PLD
6 PLE
M
A
M
0.13 (0.005) B M
T
L
M
6 PLJ
M
B
M
0.13 (0.005) A M
T
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A0.320 0.350 8.13 8.89
B0.240 0.260 6.10 6.60
C0.115 0.200 2.93 5.08
D0.016 0.020 0.41 0.50
E0.040 0.070 1.02 1.77
F0.010 0.014 0.25 0.36
G0.100 BSC 2.54 BSC
J0.008 0.012 0.21 0.30
K0.100 0.150 2.54 3.81
L0.300 BSC 7.62 BSC
M0 15 0 15
N0.015 0.100 0.38 2.54
_ _ _ _
STYLE 6:
PIN 1. ANODE
2. CATHODE
3. NC
4. MAIN TERMINAL
5. SUBSTRATE
6. MAIN TERMINAL
SURFACE MOUNT
–A–
–B–
S
SEATING
PLANE
–T–
J
K
L
6 PL
M
B
M
0.13 (0.005) A M
T
C
D6 PL
M
A
M
0.13 (0.005) B M
T
H
G
E6 PL
F4 PL
31
46
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A0.320 0.350 8.13 8.89
B0.240 0.260 6.10 6.60
C0.115 0.200 2.93 5.08
D0.016 0.020 0.41 0.50
E0.040 0.070 1.02 1.77
F0.010 0.014 0.25 0.36
G0.100 BSC 2.54 BSC
H0.020 0.025 0.51 0.63
J0.008 0.012 0.20 0.30
K0.006 0.035 0.16 0.88
L0.320 BSC 8.13 BSC
S0.332 0.390 8.43 9.90
MOC3010, MOC3011, MOC3012
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION L TO CENTER OF LEAD WHEN
FORMED PARALLEL.
0.4" LEAD PACING
6 4
1 3
–A–
–B–
N
C
K
G
F4 PL
SEATING
D6 PL
E6 PL
PLANE
–T–
M
A
M
0.13 (0.005) B M
T
L
J
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A0.320 0.350 8.13 8.89
B0.240 0.260 6.10 6.60
C0.115 0.200 2.93 5.08
D0.016 0.020 0.41 0.50
E0.040 0.070 1.02 1.77
F0.010 0.014 0.25 0.36
G0.100 BSC 2.54 BSC
J0.008 0.012 0.21 0.30
K0.100 0.150 2.54 3.81
L0.400 0.425 10.16 10.80
N0.015 0.040 0.38 1.02
MOC3010, MOC3011, MOC3012
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES
OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD SEMICONDUCTOR
CORPORATION. As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, and (c) whose failure to
perform when properly used in accordance with
instructions for use provided in the labeling, can be
reasonably expected to result in a significant injury of the
user.
2. A critical component in any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO
ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME
ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
www.fairchildsemi.com © 2000 Fairchild Semiconductor Corporation
