BZD27C Series 0.8 W Surface Mount Glass Passivated Zener Diode Dimensions in mm. Voltage 11 to 240 V CASE: M1F (DO219AA) Power 0.8 W R * Silicon planar zener diodes * Low profile surface-mount package * Zener and surge curren specification * Low leakage curren * Excellent stability * High temperature soldering: 260 C / 10 seconds at terminals MECHANICAL DATA * Case: Sub SMA Plastic * Terminal: Pure tin plated lead free. * Packaging method: refer to package code * Marking code: as table * Weight: 10 mg (approx.) XXX = Marking code WW = Week code Y = Year code Maximun Ratings and Electrical Characteristics at 25 C SYMBOL VF Ptot TYPE NUMBER Unit V Forward Voltage @ IF = 0.2A 1.2 Power Dissipation TL = 80 C 2.3 TA = 25 C (Note 1) 0.8 Non-Repetitive Peak Pulse Power Dissipation PZSM Value 100 s square pulse (Note 2) W 300 W 150 W 100 W Non-Repetitive Peak Pulse Power Dissipation PRSM 10/1000 s waveform (BZD27-C7V5P to BZD27-C100P) (Note 2) Non-Repetitive Peak Pulse Power Dissipation PRSM 10/1000 s waveform (BZD27-110P to BZD27-C200P) (Note 2) R.JA Thermal Resistance Junction to Ambient Air (Note 1) 180 K /W R.JL Thermal Resistance Junction to lead 30 K /W Tj - Tstg Operating and Storage Temperature Range -65 to + 175 C Notes: 1.Mounted on Epoxy-Glass PCB with 3 x 3 mm Cu pads (40 mthick) 2. Tj = 25 C Prior to surge. Sep - 08 BZD27C Series Electrical Characteristics Device (TA = 25 C unless otherwise noted) Reverse Current @ Working Voltage Differential Temperature (Note 1) Resistance Coefficient Test VZ @ IZT rdif @ IZ ALPHZ @ IZ Current IR V IZT A Device Marking Code % / C Reverse Voltage VR Min. Max. typ Max. Min. Max. Ma Max. V BZD27C11P Z11 10.4 11.6 4.0 7 0.05 0.10 50 4.0 8.2 BZD27C12P Z12 11.4 12.7 4.0 7 0.05 0.10 50 3.0 9.1 BZD27C13P Z13 12.4 14.1 5.0 10 0.05 0.10 50 2.0 10 BZD27C15P Z15 13.8 15.6 5.0 10 0.05 0.10 25 1.0 11 BZD27C16P Z16 15.3 17.1 6.0 15 0.06 0.11 25 1.0 12 BZD27C18P Z18 16.8 19.1 6.0 15 0.06 0.11 25 1.0 13 BZD27C24P Z24 22.8 25.6 7.0 15 0.06 0.11 25 1.0 18 BZD27C27P Z27 25.1 28.9 7.0 15 0.06 0.11 25 1.0 20 BZD27C33P Z33 31 35 8.0 15 0.06 0.11 25 1.0 24 BZD27C36P Z36 34 38 21 40 0.06 0.11 10 1.0 27 BZD27C39P Z39 37 41 21 40 0.06 0.11 10 1.0 30 BZD27C43P Z43 40 46 24 45 0.07 0.12 10 1.0 33 BZD27C47P Z47 44 50 24 45 0.07 0.12 10 1.0 36 BZD27C62P Z62 58 66 25 80 0.08 0.13 10 1.0 47 BZD27C68P Z68 64 72 25 80 0.08 0.13 10 1.0 51 BZD27C100P 10Z 94 106 60 200 0.09 0.13 5 1.0 75 BZD27C120P 12Z 114 127 80 250 0.09 0.13 5 1.0 91 BZD27C200P 20Z 188 212 200 500 0.09 0.13 5 1.0 150 BZD27C220P 22Z 208 233 350 750 0.09 0.13 2 1.0 160 BZD27C240P 24Z 228 256 400 850 0.09 0.13 2 1.0 180 Notes: 1. Pulse test: tp 5ms. Sep - 08 BZD27C Series Rating And Characteristic Curves FORWARD CURRENT vs FORWARD VOLTAGE TYP. DIODE CAPACITANCE vs REVERSE VOLTAGE 10000 TYP. VF 1 MAX. VF CD, Typ. junction capacitance (pF) IF, forward current (A) 10 0.1 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 C12P 100 C27P C200P 10 0.0 0.5 1.0 1.5 2.0 2.5 3.0 VR, reverse voltage (V) POWER DISSIPATION vs AMBIENT TEMPERATURE MAXIMUM PULSE POWER DISSIPATION vs ZENER VOLTAGE 2.5 SEPOINT TEMPERATURE 2.0 1.5 AMBIENT TEMPERATURE 1.0 0.5 0 0 50 75 100 125 150 175 Tamb, ambient temperature C PPDM, Max. pulse power dissipation (W) VF, forward voltage (V) 3.0 PD, power dissipation (W) 1000 160 140 120 100 80 60 40 20 0 0 25 50 75 100 125 150 175 200 Vz, zener voltage (V) Sep - 08