140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 2N5179 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features * Silicon NPN, TO-72 packaged VHF/UHF Transistor * Low Noise, NF = 4.5 dB (max) @ 200 MHz * High Current-Gain-Bandwidth Product 1.4 Ghz (typ) @ 10 mAdc 2 * 1 Characterized with S-Parameters 3 4 1. Emitter 2. Base 3. Collector 4. Case TO-72 DESCRIPTION: Silicon NPN transistor, designed for VHF and UHF equipment. Ideal for pre-driver, low noise amplifier, and oscillator applications. ABSOLUTE MAXIMUM RATINGS (Tcase = 25C) Symbol VCEO Parameter Collector-Emitter Voltage Value 12 Unit Vdc VCBO VEBO Collector-Base Voltage 20 Vdc Emitter-Base Voltage 2.5 Vdc IC Collector Current 50 mA 300 1.71 mWatts mW/ C Thermal Data PD Total Device Dissipation @ TA = 25C Derate above 25C MSC1305.PDF 10-25-99 2N5179 ELECTRICAL SPECIFICATIONS (Tcase = 25C) STATIC (off) Symbol VCEO(sus) BVCBO BVEBO ICBO Test Conditions Value Min. Typ. Max. Unit Collector-Emitter Sustaining Voltage (IC = 3.0 mAdc, IB = 0) 12 - - Vdc Collector-Base Breakdown Voltage (IC=1.0 Adc, IE=0) 20 - - Vdc Emitter Base Breakdown Voltage (IE = 0.01 mAdc, IC = 0) 2.5 - - - - .02 A DC Current Gain (IC = 3.0 mAdc, VCE = 1.0 Vdc) 25 - 250 - Base-Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) - - 1.0 Vdc Collector-Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) - - 0.4 Vdc Collector Cutoff Current (VCB = 15 Vdc, IE = 0) Vdc (on) HFE VBE(sat) VCE(sat) DYNAMIC Symbol fT CCB Test Conditions Current-Gain - Bandwidth Product (IC = 5.0 mAdc, VCE = 6 Vdc, f = 100 MHz) Collector-base Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) MSC1305.PDF 10-25-99 Value Min. Typ. Max. Unit 900 1500 - MHz - - 1.0 pF 2N5179 FUNCTIONAL Symbol NF GPE Test Conditions Noise Figure (figure 1) Common-Emitter Amplifier Power Gain (figure 1) PIN (RS=50 OHMS) Value Min. Typ. Max. Unit IC = 1.5 mAdc, VCE = 6.0 Vdc, f = 200 MHz - - 4.5 dB IC = 1.5 mAdc, VCE = 6.0 Vdc, f = 200 MHz 20 - - dB POUT (RL=50 OHMS) Figure 1. 200 MHz Amplifier for Power Gain and Noise Figure specifications. MSC1305.PDF 10-25-99 2N5179 FUNCTIONAL (CONT) Symbol G U max MAG 2 |S21| Test Conditions Maximum Unilateral Gain (1) Maximum Available Gain Insertion Gain Value Min. Typ. Max. Unit IC = 5 mAdc, VCE = 6.0 Vdc, f = 200 MHz - 17 - dB IC = 5 mAdc, VCE = 6.0 Vdc, f = 200 MHz - 18 - dB IC = 5 mAdc, VCE = 6.0 Vdc, f = 200 MHz - 12 - dB Note: 1. Maximum Unilateral Gain = |S21|2 / (1 - |S11|2) (1 - |S22|2) Table 1. Common Emitter S-Parameters, @ VCE = 6 V, IC = 5 mA f S11 S21 S12 S22 (MHz) |S11| |S21| |S12| |S22| 100 .471 -90 6.78 122 .023 64 .844 -51 200 .314 -145 4.20 100 .034 58 .780 -93 300 .230 156 2.76 91 .043 65 .768 -134 400 .171 108 2.17 86 .056 63 .756 -177 500 .168 54 1.86 79 .062 62 .741 140 600 .149 -9 1.53 71 .069 66 .740 98 700 .137 -72 1.31 67 .073 71 .739 54 800 .119 -129 1.18 64 .092 74 .744 8 900 .153 -174 1.13 58 .101 68 .742 -38 1000 .171 122 .979 49 .106 71 .749 -82 MSC1305.PDF 10-25-99 2N5179 MSC1305.PDF 10-25-99