MSC1305.PDF 10-25-99
2N5179
DESCRIPTION:
Silicon NPN transistor, designed for VHF and UHF equipment. Ideal for pre-driver, low noise amplifier, and oscillator
applications.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol Parameter Value Unit
VCEO Collector-Emitter Voltage 12 Vdc
VCBOCollector-Base Voltage 20 Vdc
VEBO Emitter-Base Voltage 2.5 Vdc
ICCollector Current 50 mA
Thermal Data
PDTotal Device Dissipation @ TA = 25ºC
Derate above 25ºC 300
1.71 mWatts
mW/ ºC
1
2
3
4
1. Emitter
2. Base
3. Collector
4. Case
TO-72
Features
• Silicon NPN, TO-72 packaged VHF/UHF Transistor
• Low Noise, NF = 4.5 dB (max) @ 200 MHz
• High Current-Gain-Bandwidth Product 1.4 Ghz (typ) @ 10 mAdc
• Characterized with S-Parameters
RF & MICROWAVE DISCRETE
LOW POWER TRANSISTORS
140 COMMERCE DRIVE
MONTGOMERYVILLE, PA
18936-1013
PHONE: (215) 631-9840
FAX: (215) 631-9855
MSC1305.PDF 10-25-99
2N5179
ELECTRICAL SPECIFICATIONS (Tcase = 25°C)
STATIC
(off)
Symbol Test Conditions Value
Min. Typ. Max. Unit
VCEO(sus) Collector-Emitter Sustaining Voltage
(IC = 3.0 mAdc, IB = 0) 12 - - Vdc
BVCBO Collector-Base Breakdown Voltage
(IC=1.0 µAdc, IE=0) 20 - - Vdc
BVEBO Emitter Base Breakdown Voltage
(IE = 0.01 mAdc, IC = 0) 2.5 - - Vdc
ICBO Collector Cutoff Current
(VCB = 15 Vdc, IE = 0) - - .02 µA
(on)HFE DC Current Gain
(IC = 3.0 mAdc, VCE = 1.0 Vdc) 25 -250 -
VBE(sat) Base-Emitter Saturation Voltage
(IC = 10 mAdc, IB = 1.0 mAdc) - - 1.0 Vdc
VCE(sat) Collector-Emitter Saturation Voltage
(IC = 10 mAdc, IB = 1.0 mAdc) - - 0.4 Vdc
DYNAMIC
Symbol Test Conditions Value
Min. Typ. Max. Unit
fTCurrent-Gain - Bandwidth Product
(IC = 5.0 mAdc, VCE = 6 Vdc, f = 100 MHz) 900 1500 -MHz
CCB Collector-base Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz) --1.0 pF
MSC1305.PDF 10-25-99
2N5179
FUNCTIONAL
Symbol Test Conditions Value
Min. Typ. Max. Unit
NF Noise Figure (figure 1) IC = 1.5 mAdc, VCE = 6.0
Vdc, f = 200 MHz - - 4.5 dB
GPE Common-Emitter Amplifier
Power Gain (figure 1) IC = 1.5 mAdc, VCE = 6.0
Vdc, f = 200 MHz 20 - - dB
POUT
(RL=50 OHMS)
PIN
(RS=50 OHMS)
Figure 1. 200 MHz Amplifier for Power Gain and Noise Figure specifications.
MSC1305.PDF 10-25-99
2N5179
FUNCTIONAL (CONT)
Symbol Test Conditions Value
Min. Typ. Max. Unit
GU max Maximum Unilateral Gain (1) IC = 5 mAdc, VCE = 6.0 Vdc,
f = 200 MHz -17 -dB
MAG Maximum Available Gain IC = 5 mAdc, VCE = 6.0 Vdc,
f = 200 MHz -18 -dB
|S21|2Insertion Gain IC = 5 mAdc, VCE = 6.0 Vdc,
f = 200 MHz -12 -dB
Note: 1. Maximum Unilateral Gain = |S21|2 / (1 - |S11|2) (1 - |S22|2)
Table 1. Common Emitter S-Parameters, @ VCE = 6 V, IC = 5 mA
f
S11
S21
S12
S22
(MHz) |S11| ∠ φ |S21| ∠ φ |S12| ∠ φ |S22| ∠ φ
100 .471 -90 6.78 122 .023 64 .844 -51
200 .314 -145 4.20 100 .034 58 .780 -93
300 .230 156 2.76 91 .043 65 .768 -134
400 .171 108 2.17 86 .056 63 .756 -177
500 .168 54 1.86 79 .062 62 .741 140
600 .149 -9 1.53 71 .069 66 .740 98
700 .137 -72 1.31 67 .073 71 .739 54
800 .119 -129 1.18 64 .092 74 .744 8
900 .153 -174 1.13 58 .101 68 .742 -38
1000 .171 122 .979 49 .106 71 .749 -82
MSC1305.PDF 10-25-99
2N5179
