WESTCODE SEMICONDUCTORS 39 D MM 9709955 0002395S 3 MBWESB72s-al Gy) WESTCODE @ SEMICONDUCTORS High Frequency Inverter Grade Capsule Thyristor Type R219C distributed amplified gate for high di/dt and low switching losses 690 amperes average: up to 1200 volts Vooul/Vorm Ratings (Maximum values at 125C Tj unless stated otherwise) Technical Publication TR219C Issue 2 December 1985 RATING CONDITIONS SYMBOL 56C heatsink temperature 690 A Average on-state current Half sine wave (double side cooled) hav) 85C heatsink temperature 240 A (single side cooled) R.M.S. on-state current 25C heatsink temperature, double side cooled hips) 1430 A Continuous on-state current 25C heatsink temperature, double side cooled hk 1100 A Peak one-cycle surge 10ms duration, 60% Vagy re-applied hsm (1) 9000 A {non-repetitive) on state current 10ms duration, Vas 10 voits besa (2) 9900 A . 2 Maximum permissible surge energy "ore duration, vie 10 ert ia 353000 ne Peak forward gate current Anode positive with respect to cathode lkcom 36 A Peak forward gate voltage Anode positive with respect to cathode Veco 16 V Peak reverse gate voltage Vaca 5V Average gate power Pg 2W Peak gate power 100s. pulse width Pom 120 W Rate of rise of off-state voltage To 80% Vprm gate open-circuit dv/dt *200 V/ns Rate of rise of on-state current di/dt (1) 1000 A/us (repetitive) Gate drive 20 volts, 20 ohms with t, < 1s. Rate of rise of on-state current Anode voitage:< 80% Vorm di/dt (2) 1500 A/ys (non-repetitive) Operating temperature range Ths 40+ 125C Storage temperature range Tstg 40+ 150C Characteristics (Maximum values at 125C Tj unless stated otherwise) CHARACTERISTIC CONDITIONS SYMBOL Peak on-state voltage At 1400 A, bry Vim 2.04V Forward conduction threshold voltage Vo 1.55 V Forward conduction slope resistance r 0.35 mQ Repetitive peak off-state current At Vorm lbaM 70 mA Repetitive peak reverse current At Varm lram 70 mA Maximum gate current required to fire all devices lor 300 mA Maximum gate voltage required to fire all devices \ At 25C, V,=10V, 1,=2A | Vor 3V Maximum holding current ty 1A Maximum gate voltage which will not trigger any device Veo 0.25 V Stored charge = i a a o sc Circuit commutated turn-off time lem = 1000A Po us to 80% Vor! ta 15-25 ys available down to dir/dt = 60A/u8, Vay =50V) 20V/us to 80% Vory} ta typical 10-20 ys Thermal resistance, junction to heat sink, Double side cooled R, 0.047C /W for a device with a maximum forward volt Single side cooled nirhs) 0.094C /W drop characteristic VOLTAGE CODE HO02 H04 HO6 HO8 H10 H1i2 Repetitive peak vol Non-repetitive peak eff-state voltage Vans Vor " 200 400 600 800 1000 1200 Non-repetitive peak reverse blocking voltage | Vasm | 300 500 700 900 1100 1300 Ordering Information (Please quote device code as explained below) R 219 C ee @ e 0 dv/dt code to 80% Vorm Turn-off time Fixed Voltage Code C=20V/us E=100V/ps J=25 us K=20 ps type code {see ratings) D=50V/us F=200V/us L=15 ys N=10 us Typical code: R219CHO6FKO= 600 Vpay 600 Vogy 200 V/us dv/dt to 80% Vor 20 ns turn-off *Other values of dv/dt up to 1000 V/ns, and turn-off time may be available. | 9000-3990WESTCODE SEMICONDUCTORS (a) {b) (c) (d) (e) (a) INTRODUCTION The R219C series of thyristors incorporates diffused silicon slices, 38 mm in diameter in cold- weld housings. Fast turn-on, with low turn-on loss is achieved by interdigitation of the cathode. NOTES ON THE RATINGS (b) Rate of rise of on-state current The maximum un-primed rate of rise of on-state current must not exceed 1500 A/us at any time during turn-on on a non-repetitive basis. For repetitive performance the on-state rate of rise of current must not exceed 1000 A/us at any time during turn-on. Note that these values of current rate of rise apply to the circuit external to the device and its specified snubber network and device current rates of rise will be higher. Square wave ratings These ratings are given for leading edge linear rates of rise of forward current of 100 and 500 A/ys. Duty Cycle Lines The 100% duty cycle line appears on ail these ratings. These frequency ratings are presented in the form that all duty cycles may be represented by straight parallel lines. 4. Maximum operating Frequency The maximum operating frequency, fax, is set by the time required for the thyristor to turn off (tq) and for the off-state voltage to reach full value (tv), i.e. f= 1 3X" touise + ta + tv 5. Energy per pulse characteristics These curves enable rapid estimation of device dissipation to be obtained for conditions not covered by the frequency ratings. Let E, be the Energy per pulse for a given current and pulse width, in joules. Then Way =E, xf. REVERSE RECOVERY LOSS On account of the number of circuit variables affecting reverse recovery voltage, no allowance for reverse recovery loss has been made in these ratings. The following procedure is recommended for use where it is necessary to include reverse recovery loss. Determination by Measurement ; From waveforms of recovery current obtained from a high frequency shunt (see Note 1) and 6 reverse voltage present during recovery, an , instantaneous reverse recovery loss waveform must be constructed. Let the area under this waveform be A joules per pulse. A new heat sink temperature can then be evaluated from: .. 6 Toink (New) = Tsinx (original) A (2 + Rin X 7 where r,=8.53 x 10-5/t (a) t=duration of reverse recovery joss per pulse in microseconds (b) A=Area under reverse loss waveform per pulse in joules (W.S.) f=rated frequency at the original heat sink temperature 39E D mm 9709955 00023%6b 5 MEWESBT-QS-Qy The total dissipation is now given by W tot) = Wioriginay) + A X f Design Method In circumstances where it is not possible to measure voltage and current conditions, or for design purposes, the additional losses may be estimated from figure 7. A typical R-C snubber network is connected across the thyristor to control the transient reverse voltage waveform. Let E be the value of energy per reverse cycle in joules (figure 7). Let f be the operating frequency in Hz then Tsinx New = Tsiyx Original ERy, x f where Tsinx New is the required maximum heat sink temperature and Tswx Original is the heat sink temperature given with the frequency ratings. GATE DRIVE The recommended gate drive is 20 V, 20 ohms with a short-circuit current rise time of not more than 1 us. This gate drive must be applied when using the full di/dt capability of the device. THE DV/DT SUPPRESSION NETWORK The effect of a conventional resistor-capacitor snubber of 0.1 F 10 ohms has been included in these ratings and all rating di/dt values apply to the circuit external to the thyristor and its suppression network. Snubber Network Values A series connected C-R filter may be required across the anode to cathode terminals of the thyristor for the purpose of reducing off-state voltage overshoot. The optimum values for C and R depend partly on the circuits connected to the thyristor. For most applications the snubber design values should not exceed a maximum of 0.1 wF ora minimum of 10 ohms. Please consult Westcode for values outside these limits. NOTE 1 REVERSE RECOVERY LOSS BY MEASUREMENT This thyristor has a low reverse recovered charge and peak reverse recovery current. When measuring the charge care must be taken to ensure that: a.c. coupled devices such as current transformers are not affected by prior passage of high amplitude forward current. The measuring oscilloscope has adequate dynamic range typically 100 screen heights to cope with the initial forward current without overload.WESTCODE SEMICONDUCTORS 35E D MM 9709955 0002397 7 MBUESBT-2S-3/ 100 100 hs = C 500 A/ps square wave hs = 85C 100 A/yus square wave 10 10 0.1 0.1 N N z Z o @ 3 2 oT So o oO = 0.01 = 0.01 0.01 0.1 1 10 0.01 0.1 1 10 pulse width, m.secs pulse width, m.secs Figure 1 Frequency v. pulse width Figure 2. Frequency v. pulse width 100 100 hs 55C hs = 55C 500 A/ps 100 A/us square wave square wave 10 10 1 1 0.1 0.1 x x wv : > g 2 oO oe 5 2S 5 5 = 0.01 = 0.01 0.01 0.1 1 10 0.01 0.1 1 10 pulse width, m.secs pulse width, m.secs Figure 3 Frequency v. pulse width Figure 4 Frequency v. pulse widthWESTCODE SEMICONDUCTORS J5E >b MM 9709955 0002398 9 MWESB T3252) 100 100 10 10 B 0.1 g 0.1 3 3 * i= 125C C j= 125C g 500 A/us 2 100 A/ps 2 square wave 2 re wave > > > o Fs & 0.01 @ 0.01 0.01 0.1 1 10 0.01 0.1 1 10 pulse width, m.secs pulse width, m.secs Figure 5 Energy/pulse v. pulse Figure 6 Energy/pulse v. pulse width width 0.1 snubber connected 0.1 #F 102 0.08 F peak reverse voltage Vam =0.67 Varm max. (804 volts) 0.06 0.04 0.03 0.02 energy per pulse, joules 0.01 10 20 30 40 50 100 200 commutating di/dt, A/us Figure 7 Max. reverse recovery energy loss per pulse at 125C junction temperature and Vem =804 voltsWESTCODE SEMICONDUCTORS 35E D Ml 9709955 0002399 O MBUESB 7-28,2( 100 hs = 85 Cc ine wave 10 0.1 frequency, KHz 0.01 0.01 0.1 1 10 pulse width, m.secs Figure 8 Frequency v. pulse width 100 hs = 55C ine wave 10 0.1 frequency, KHz 0.01 0.01 0.1 1 10 pulse width, m.secs Figure 10 Frequency v. pulse width recovered charge, Q,,, microcoulombs 100 10 2 an o a2 = energy/pulse, joules 0.01 0.1 1 10 pulse width, m.secs Figure 9 Energy/pulse v. pulse width 200 100 70 40 20 30 40 50 100 200 commutating di/dt, A/ys Figure 11 Maximum recovered charge at 125C junction temperature39E >) 709955 Ooo2400 3 MBWESB T25-2/ 0.1 3 = 100 107 5 0.05 5 g 5 Ait: Vi 5 3 ila: 60% Vp -~ : j = 0,01 2 E 3 10 We 2 0.005 8 x a Qa E c = g a = 0.001 8 1 10 0.001 0.01 0.1 1 10 1 1010.5 5 50 100 5 time, seconds m.secs cycles at 50 Hz . . . . duration of surge we Figure 12 Junction to heatsink Figure 13. Max. non-repetitive surge current transient thermal at initial junction temperature 125C impe dance (gate may temporarily lose control of firing angle) Note: This rating must not be interpreted as an intermittent rating 18 16 Vg pk. max. (Ig tr= 4 14 Gg d.c. max. 12 2 : 10 $ a Pg max. (pulse) 6 2 i 8 120 W > : ao z > 6 2 8 ; 3 o S$ 3 mo 4 fie within these curves 2 : s 21 tor gatsts of Pg max. d.c. =2 ao 2 me 0 200 400 600 s figure 15 are a 0 gate current, Ig, milliamperes 0.1 0305 1 3 5 10 30 50 Figure 15 Gate triggering gate current, Ig, amperes characteristics. ) Figure 14 Gate characteristics at Trigger points of all thyristors lie within the 25C junction temperature areas shown Gate drive load line must lie outside appropriate I,/V, rectangle 10000 . WESTCODE SEMICONDUCTORS 5000 dimensions in mm (inches) Mounting force: 1000-2000 kgf Weight: 340 grams 1000 COMPRESSED HEIGHT peak on-state current, amperes f 1 . je Rig [Lees 100 ot ronde ne 14 18 2.2 26 30 3.4 (Ob ro 098 | on-state voltage, volts 036-19 14 oat Figure 16 Limit on-state characteristic 2 HOLES ) TO 200AC In the interest of praduct improvement, Westcode reserves the right to change specifications at any time without notice. WESTCODE SEMICONDUCTORS LTD P.O. Box 57 Chippenham Wiltshire SN15 1JL England Telephone Chippenham (0249) 654141 Telex 44751 F@ HAWKER SIDDELEY Westinghouse Brake and Signal Co. Ltd. Printed by the Pheon Press, Bristol 2M1285