XS170 Multifunction Telecom Switch INTEGRATED CIRCUITS DIVISION Parameter Blocking Voltage Load Current On-Resistance (max) Rating 350 100 50 Description Units VP mArms / mADC The XS170 integrated circuit device combines a 350V, 100mA, 50, normally open (1-Form-A) relay with an optocoupler in a single package. The relay uses optically coupled MOSFET technology to provide 3750Vrms of input to output isolation. Features * 3750Vrms Input/Output Isolation * Low Drive Power Requirements * FCC Compatible * VDE Compatible * High Reliability * Arc-Free With No Snubbing Circuits * No EMI/RFI Generation * Small 8-Pin Package * Surface Mount Tape & Reel Version Available * Flammability Rating UL 94 V-0 Its optically coupled outputs, which use the patented OptoMOS architecture, are controlled by a highly efficient infrared LED. Telecom circuit designers, using the XS170, can now take advantage of two discrete functions in a single component that uses less space than traditional discrete component solutions. Approvals Applications * Telecommunications * Telecom Switching * Tip/Ring Circuits * Modem Switching (Laptop, Notebook, Pocket Size) * Hook Switch * Dial Pulsing * Ground Start * Ringing Injection * Instrumentation * Multiplexers * Data Acquisition * Electronic Switching * I/O Subsystems * Meters (Watt-Hour, Water, Gas) * Medical Equipment-Patient/Equipment Isolation * Security * Aerospace * Industrial Controls * UL Recognized Component: File E76270 * EN/IEC 60950-1 Certified Component: TUV Certificate: B 13 12 82667 003 Ordering Information Part # XS170 XS170S XS170STR Description 8-Pin DIP (50/Tube) 8-Pin Surface Mount (50/Tube) 8-Pin Surface Mount (1000/Reel) Pin Configuration + LED - Relay - LED - Relay Collector - Phototransistor Emitter - Phototransistor 1 8 2 7 3 6 4 5 Load - Relay (MOSFET Output) Load - Relay (MOSFET Output) LED - Phototransistor -/+ LED - Phototransistor +/- Switching Characteristics of Normally Open Devices Form-A IF 90% 10% ILOAD ton DS-XS170-R04 www.ixysic.com toff 1 INTEGRATED CIRCUITS DIVISION XS170 Absolute Maximum Ratings @ 25C Parameter Relay Blocking Voltage Reverse Input Voltage Input Power Dissipation 1 Relay Input Control Current Peak (10ms) Detector Input Control Current Total Power Dissipation 2 Isolation Voltage, Input to Output Operational Temperature (TA) Storage Temperature 1 Derate linearly 1.33 mW / C 2 Derate linearly 6.67 mW / C Ratings 350 5 150 50 1 100 800 3750 -40 to +85 -40 to +125 Absolute Maximum Ratings are stress ratings. Stresses in excess of these ratings can cause permanent damage to the device. Functional operation of the device at conditions beyond those indicated in the operational sections of this data sheet is not implied. Units VP V mW mA A mA mW Vrms C C Typical values are characteristic of the device at +25C, and are the result of engineering evaluations. They are provided for information purposes only, and are not part of the manufacturing testing requirements. Electrical Characteristics @25C: Relay Section Parameter Output Characteristics Load Current, Continuous Continuous Peak On-Resistance Off-State Leakage Current Switching Speeds Turn-On Turn-Off Output Capacitance Input Characteristics Input Control Current to Activate Input Control Current to Deactivate Input Voltage Drop Reverse Input Current Common Characteristics Capacitance, Input to Output Conditions Symbol Min Typ Max Units t=10ms IL=120mA VL=350V IL ILPK RON ILEAK - 33 - 100 350 50 1 mArms / mADC mAP IF=0mA, VL=50V, f=1MHz ton toff COUT - 25 5 5 - IL=120mA IF=5mA VR=5V IF IF VF IR 0.4 0.9 - 0.7 1.2 - 2 1.4 10 mA mA V A VIO=0V, f=1MHz CIO - 3 - pF IF=5mA, VL=10V A ms pF Electrical Characteristics @25C: Detector Section Parameter Output Characteristics Phototransistor Blocking Voltage Phototransistor Dark Current Saturation Voltage Current Transfer Ratio Input Characteristics Input Control Current Input Voltage Drop Input Current (Detector must be off) Isolation, Input to Output Common Characteristics Input to Output Capacitance 2 Conditions Symbol Min Typ Max Units IC=10A VCE=5V, IF=0mA IC=2mA, IF=16mA IF=6mA, VCE=0.5V BVCEO ICEO VSAT CTR 20 33 50 50 0.3 100 500 0.5 - V nA V % IC=2mA, VCE=0.5V IF=5mA IC=1A, VCE=5V - IF VF IF VI/O 0.9 5 3750 2 1.2 25 - 6 1.4 - mA V A Vrms - CI/O - 3 - pF www.ixysic.com R04 INTEGRATED CIRCUITS DIVISION XS170 RELAY PERFORMANCE DATA* Typical IF for Switch Operation (N=50, IL=100mADC) Typical LED Forward Voltage Drop (N=50, IF=5mA) Device Count (N) 25 20 15 10 5 1.17 1.19 1.21 1.23 20 15 10 5 15 10 5 0 0.44 1.25 0.50 0.56 0.62 0.69 0.75 0.81 0.44 0.50 0.56 0.62 0.69 0.75 LED Forward Voltage Drop (V) LED Current (mA) LED Current (mA) Typical On-Resistance Distribution (N=50, IL=100mADC) Typical Turn-On Time (N=50, IL=100mADC) Typical Turn-Off Time (N=50, IL=100mADC) 25 Device Count (N) 20 Device Count (N) 20 0 0 25 25 15 10 5 20 15 10 5 0 0 20 15 10 5 0 0.67 29.09 29.86 30.63 31.40 32.16 32.93 33.70 0.81 25 Device Count (N) Device Count (N) 30 25 Device Count (N) 35 Typical IF for Switch Dropout (N=50, IL=100mADC) 0.75 0.83 0.91 0.99 1.06 1.14 0.11 0.14 Turn-On Time (ms) On-Resistance (:) 0.17 0.19 0.22 0.25 0.28 Turn-Off Time (ms) Typical Blocking Voltage Distribution (N=50) Device Count (N) 25 20 15 10 5 0 424.0 429.3 434.5 439.7 444.9 450.1 455.4 Blocking Voltage (VP) Typical IF for Switch Operation vs. Temperature (IL=100mADC) 6 1.6 5 1.4 IF=50mA IF=30mA IF=20mA IF=10mA IF=5mA 1.2 1.0 5 4 3 2 1 0.8 -20 0 20 40 60 Temperature (C) 80 100 120 4 3 2 1 0 -40 Typical IF for Switch Dropout vs. Temperature (IF=100mADC) 6 LED Current (mA) 1.8 LED Current (mA) Forward Voltage (V) Typical LED Forward Voltage Drop vs. Temperature 0 -40 -20 0 20 40 60 Temperature (C) 80 100 120 -40 -20 0 20 40 60 80 100 120 Temperature (C) * Unless otherwise noted, data presented in these graphs is typical of device operation at 25C. For guaranteed parameters not indicated in the written specifications, please contact our application department. R04 www.ixysic.com 3 INTEGRATED CIRCUITS DIVISION XS170 RELAY PERFORMANCE DATA* Typical Load Current vs. Load Voltage (IF=5mA) -4 -3 70 -2 -1 0 1 2 3 0 4 10 15 20 25 30 35 40 45 50 0 20 25 30 35 40 Typical Turn-Off Time vs. Temperature (IL=120mADC) 1.8 20 10 IF=5mA IF=10mA IF=20mA 1.4 1.2 1.0 Turn-Off Time (ms) 30 0.8 0.6 0.4 0.2 0 0 0 20 40 60 80 -40 100 120 -20 0 20 40 60 100 120 80 0.50 0.45 0.40 0.35 0.30 0.25 0.20 0.15 0.10 0.05 0 -40 -20 0 20 40 60 80 50 45 100 120 Temperature (C) Temperature (C) Temperature (C) Maximum Load Current vs. Temperature Typical Blocking Voltage vs. Temperature Typical Leakage vs. Temperature Measured across Pins 4&6 455 0.016 140 450 0.014 120 100 80 IF=10mA IF=5mA IF=2mA 60 40 20 0 445 Leakage (PA) Blocking Voltage (VP) 160 440 435 430 0 20 40 60 80 100 120 0.010 0.008 0.006 0.002 -40 Temperature (C) 0.012 0.004 425 420 -20 15 Typical Turn-On Time vs. Temperature (IL=100mADC) 40 -40 10 Typical On-Resistance vs. Temperature (IF=5mA, IL=100mADC) 50 -20 5 LED Forward Current (mA) 1.6 -40 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 LED Forward Current (mA) Turn-On Time (ms) On-Resistance (:) 5 Typical Turn-Off Time vs. LED Forward Current (IL=120mADC) Load Voltage (V) 60 Load Current (mA) 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 Turn-Off Time (ms) Turn-On Time (ms) Load Current (mA) 120 100 80 60 40 20 0 -20 -40 -60 -80 -100 -120 Typical Turn-On Time vs. LED Forward Current (IL=100mADC) -20 0 20 40 60 80 100 Temperature (C) 0 -40 -20 0 20 40 60 80 100 Temperature (C) Load Current (A) Energy Rating Curve 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 10Ps 100Ps 1ms 10ms 100ms 1s 10s 100s Time * Unless otherwise noted, data presented in these graphs is typical of device operation at 25C. For guaranteed parameters not indicated in the written specifications, please contact our application department. 4 www.ixysic.com R04 INTEGRATED CIRCUITS DIVISION XS170 DETECTOR PERFORMANCE DATA* Typical Normalized CTR vs. Temperature (VCE=0.5V) 8 4.0 7 3.5 3.0 2.5 2.0 1.5 1.0 12 6 5 4 IF=1mA IF=2mA IF=5mA IF=10mA IF=15mA IF=20mA 3 2 1 0.5 0 0 2 4 6 8 10 12 14 Forward Current (mA) 16 18 20 Typical Collector Current vs. Forward Current (VCE=0.5V) 0 -40 -20 0 20 40 60 80 Temperature (C) 100 120 Collector Current (mA) 4.5 Normalized CTR (%) Normalized CTR (%) Typical Normalized CTR vs. Forward Current (VCE=0.5V) 10 8 6 4 2 0 0 2 4 6 8 10 12 14 16 18 20 Forward Current (mA) * Unless otherwise noted, data presented in these graphs is typical of device operation at 25C. For guaranteed parameters not indicated in the written specifications, please contact our application department. R04 www.ixysic.com 5 INTEGRATED CIRCUITS DIVISION XS170 Manufacturing Information Moisture Sensitivity All plastic encapsulated semiconductor packages are susceptible to moisture ingression. IXYS Integrated Circuits Division classifies its plastic encapsulated devices for moisture sensitivity according to the latest version of the joint industry standard, IPC/JEDEC J-STD-020, in force at the time of product evaluation. We test all of our products to the maximum conditions set forth in the standard, and guarantee proper operation of our devices when handled according to the limitations and information in that standard as well as to any limitations set forth in the information or standards referenced below. Failure to adhere to the warnings or limitations as established by the listed specifications could result in reduced product performance, reduction of operable life, and/or reduction of overall reliability. This product carries a Moisture Sensitivity Level (MSL) classification as shown below, and should be handled according to the requirements of the latest version of the joint industry standard IPC/JEDEC J-STD-033. Device Moisture Sensitivity Level (MSL) Classification XS170 / XS170S MSL 1 ESD Sensitivity This product is ESD Sensitive, and should be handled according to the industry standard JESD-625. Soldering Profile Provided in the table below is the Classification Temperature (TC) of this product and the maximum dwell time the body temperature of this device may be (TC - 5)C or greater. The classification temperature sets the Maximum Body Temperature allowed for this device during lead-free reflow processes. For through-hole devices, and any other processes, the guidelines of J-STD-020 must be observed. Device Classification Temperature (Tc) Dwell Time (tp) Max Reflow Cycles XS170 XS170S 250C 250C 30 seconds 30 seconds 3 Board Wash IXYS Integrated Circuits Division recommends the use of no-clean flux formulations. Board washing to reduce or remove flux residue following the solder reflow process is acceptable provided proper precautions are taken to prevent damage to the device. These precautions include, but are not limited to: using a low pressure wash and providing a follow up bake cycle sufficient to remove any moisture trapped within the device due to the washing process. Due to the variability of the wash parameters used to clean the board, determination of the bake temperature and duration necessary to remove the moisture trapped within the package is the responsibility of the user (assembler). Cleaning or drying methods that employ ultrasonic energy may damage the device and should not be used. Additionally, the device must not be exposed to flux or solvents that are Chlorine- or Fluorine-based. 6 www.ixysic.com R04 INTEGRATED CIRCUITS DIVISION XS170 Mechanical Dimensions XS170 2.540 0.127 (0.100 0.005) 9.652 0.381 (0.380 0.015) 8-0.800 DIA. (8-0.031 DIA.) 2.540 0.127 (0.100 0.005) 9.144 0.508 (0.360 0.020) 6.350 0.127 (0.250 0.005) Pin 1 PCB Hole Pattern 7.620 0.254 (0.300 0.010) 0.457 0.076 (0.018 0.003) 3.302 0.051 (0.130 0.002) 7.620 0.127 (0.300 0.005) 7.239 TYP. (0.285) 4.064 TYP (0.160) 0.254 0.0127 (0.010 0.0005) 7.620 0.127 (0.300 0.005) Dimensions mm (inches) 0.813 0.102 (0.032 0.004) XS170S 9.652 0.381 (0.380 0.015) 2.540 0.127 (0.100 0.005) 6.350 0.127 (0.250 0.005) Pin 1 0.635 0.127 (0.025 0.005) 3.302 0.051 (0.130 0.002) 9.525 0.254 (0.375 0.010) 0.457 0.076 (0.018 0.003) PCB Land Pattern 2.54 (0.10) 8.90 (0.3503) 1.65 (0.0649) 7.620 0.254 (0.300 0.010) 0.254 0.0127 (0.010 0.0005) 0.65 (0.0255) 4.445 0.127 (0.175 0.005) Dimensions mm (inches) 0.813 0.102 (0.032 0.004) R04 www.ixysic.com 7 INTEGRATED CIRCUITS DIVISION XS170 XS170STR Tape & Reel 330.2 DIA. (13.00 DIA.) Top Cover Tape Thickness 0.102 MAX. (0.004 MAX.) K0 =4.90 (0.193) K1 =4.20 (0.165) Embossed Carrier Embossment W=16.00 (0.63) Bo=10.30 (0.406) Ao=10.30 (0.406) P=12.00 (0.472) User Direction of Feed Dimensions mm (inches) NOTES: 1. Dimensions carry tolerances of EIA Standard 481-2 2. Tape complies with all "Notes" for constant dimensions listed on page 5 of EIA-481-2 For additional information please visit our website at: www.ixysic.com IXYS Integrated Circuits Division makes no representations or warranties with respect to the accuracy or completeness of the contents of this publication and reserves the right to make changes to specifications and product descriptions at any time without notice. Neither circuit patent licenses nor indemnity are expressed or implied. Except as set forth in IXYS Integrated Circuits Division's Standard Terms and Conditions of Sale, IXYS Integrated Circuits Division assumes no liability whatsoever, and disclaims any express or implied warranty, relating to its products including, but not limited to, the implied warranty of merchantability, fitness for a particular purpose, or infringement of any intellectual property right. The products described in this document are not designed, intended, authorized or warranted for use as components in systems intended for surgical implant into the body, or in other applications intended to support or sustain life, or where malfunction of IXYS Integrated Circuits Division's product may result in direct physical harm, injury, or death to a person or severe property or environmental damage. IXYS Integrated Circuits Division reserves the right to discontinue or make changes to its products at any time without notice. 8 Specification: DS-XS170-R04 (c)Copyright 2017, IXYS Integrated Circuits Division All rights reserved. Printed in USA. 6/19/2017