IRFP451,450 D88FR1,R2 XOWER MOS FET 13 AMPERES 450, 500 VOLTS RDS(ON) = 0.4 0 FIELD EFFECT POWER TRANSISTOR This series of N-Channel Enhancement-mode Power MOSFETs utilizes GEs advanced Power DMOS technology to achieve low on-resistance with excellent device rugged- ness and reliability. N-CHANNEL gD CASE STYLE T0-247 DIMENSIONS ARE IN INCHES AND (MILLIMETERS) This design has been optimized to give superior performance in most switching applications including: switching power supplies, inverters, converters and solenoid/relay drivers. Also, the extended safe operating area with good linear transfer characteristics makes it well suited for many linear applications such as audio amplifiers and servo motors. os7 (148) ef (482) jr 815 (15:62) 7-178 G28) Features ) aA as one ape sop TL | (6.46) Polysilicon gate Improved stability and reliability aay | No secondary breakdown Excellent ruggedness Ultra-fast switching Independent of temperature 4 am (| Ly Voltage controlled High transconductance (1830) | . . . a | 3 Low input capacitance Reduced drive requirement e Excellent thermal stability Ease of paralleling {1027 Gas 3.65) fort | PF 19 25 .018 (0.46) 048 (1.22) eg] 219 (5.56) UNIT TYPE TERM.1 } TEAM.2 | TERM.3 TAB POWER MOS FET | 10 247 GATE ORAIN | SOURCE } DRAIN maximum ratings (Tc = 25C) (unless otherwise specified) RATING SYMBOL IRFP451/D88FR1 | IRFP450/D88FR2 UNIT Drain-Source Voltage Voss 450 500 Volts Drain-Gate Voltage, Res = IMO VoarR 450 500 Volts Continuous Drain Current @ Tc = 25C Ip 13 13 A @ Te = 100C 8 8 A Pulsed Drain Current lpm 52 52 A Gate-Source Voltage Ves +20 +20 Voits Total Power Dissipation @ To = 25C Pp 150 150 Watts Derate Above 25C 1.2 1.2 W/C Operating and Storage Junction Temperature Range Ty, Tsta -55 to 150 -55 to 150 C thermal characteristics Thermal Resistance, Junction to Case Resc 0.83 0.83 C/W Thermal Resistance, Junction to Ambient Raya 40 40 C/W Maximum Lead Temperature for Soldering Purposes: %" from Case for 5 Seconds Th 260 260 C (1) Repetitive Rating: Pulse width limited by max. junction temperature. 313electrical characteristics (To = 25 C) (unless otherwise specified) | CHARACTERISTIC |SYMBOL | MIN | TYP | MAX | UNIT | off characteristics Drain-Source Breakdown Voltage IRFP451/D88FR1 BVpss 450 _ _ Volts (Vas = OV, Ip = 250 uA) IRFP450/D88FR2 500 = Zero Gate Voltage Drain Current Ipss (Vps = Max Rating, Vag = OV, To = 25C) _ _ 250 LA (Vps = Max Rating, 0.8, Vgg = OV, To = 125C) 1000 Ooo woo Current less _ _ +500 nA on characteristics* Gate Threshold Voltage Te = 25C | Vas(tH) 2.0 _ 4.0 Volts (Vos = Vas, Ip = 250 vA) On-State Drain Current | 13 _ _ A (Vag = 10V, Vpg = 10V) D(ON) Static Drain-Source On-State Resistance (Vag = 10V, Ip = 7A) Rps(ONn) _ 0.3 0.4 Ohms Forward Transconductance (Vps = 10V, Ip = 7A) Ofs 4.8 7.0 mhos dynamic characteristics Input Capacitance Ves = OV Ciss _ 2800 3000 pF Output Capacitance Vos = 25V Coss _ 330 600 pF Reverse Transfer Capacitance f=1MHz Crss _ 55 200 pF switching characteristics* Turn-on Delay Time Vps = 225V ta(on) _- 25 _ ns Rise Time Ip = 7A, Vag = 15V tr 20 _ ns Turn-off Delay Time Roen = 500, Res = 12.50 ta(otf) _ 120 _ ns Fall Time (Res (equiv.) = 100) tt _ 65 _ ns source-drain diode ratings and characteristics | Continuous Source Current Is _ 13 A Pulsed Source Current Isom _ _ 52 A Diode Forward Voltage _ 7 1 (Tc = 25C, Vag = OV, Ig = 40A) Vsp 0. 4 Volts Reverse Recovery Time ter _ 590 _ ns (Ig = 13A, dlg/dt = 100A/yus, Te = 125C) QrR _ 7.4 _ uC *Pulse Test: Pulse width < 300 ys, duty cycle = 2% 400 80 60 40 CONDITIONS: Rogan) CONDITIONS: Ip = 7.0 A, Vag = 10V Va@s(TH) CONDITIONS: [p = 25024, Ving = Vag 20 O.8F- OPERATION IN THIS AREA 0.6 F MAY BE LIMITED BY Rogion) ip. DRAIN CURRENT (AMPERES) Rosion) AND Vegcrsj NORMALIZED 02 SINGLE PULSE IRFP451/D88FR1 Te = 28C IRFP450/D88FR2 1 2 4 6 810 20 49 6080100 200 400 600 1000 40 Q 40 80 120 160 Vos: ORAIN-SOURCE VOLTAGE (VOLTS} Ty, SUNCTION TEMPERATURE (C) MAXIMUM SAFE OPERATING AREA TYPICAL NORMALIZED Rysion; AND Vgsitn) VS. TEMP. 314