DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D114 PZM-N series Voltage regulator diodes Product specification Supersedes data of 1997 Dec 15 1999 Jan 28 Philips Semiconductors Product specification Voltage regulator diodes FEATURES PZM-N series PINNING * Total power dissipation: max. 300 mW PIN * Small plastic package suitable for surface mounted design * Wide working voltage range: nom. 2.4 to 75 V (E24 range). DESCRIPTION 1 anode 2 not connected 3 cathode handbook, halfpage 3 APPLICATIONS * General regulation functions. 2 n.c. DESCRIPTION Low power general purpose voltage regulator diode in a SOT346 (SC59) plastic package, suitable for surface mounted design. 1 3 1 2 Top view MAM378 Fig.1 Simplified outline (SOT346; SC59) and symbol. MARKING MARKING CODE TYPE NUMBER B PZM2.4N 2V4 - PZM2.7N 2V7 271 PZM3.0N 3V0 301 PZM3.3N 3V3 PZM3.6N 3V6 PZM3.9N MARKING CODE B3 TYPE NUMBER B B1 B2 B3 - - PZM15N 15V 151 152 153 272 - PZM16N 16V 161 162 163 302 - PZM18N 18V 181 182 183 331 332 - PZM20N 20V 201 202 203 361 362 - PZM22N 22V 221 222 223 3V9 391 392 - PZM24N 24V 241 242 243 PZM4.3N 4V3 431 432 433 PZM27N 27V - - - PZM4.7N 4V7 471 472 473 PZM30N 30V - - - PZM5.1N 5V1 511 512 513 PZM33N 33V - - - PZM5.6N 5V6 561 562 563 PZM36N 36V - - - PZM6.2N 6V2 621 622 623 PZM39N 39V - - - PZM6.8N 6V8 681 682 683 PZM43N 43V - - - PZM7.5N 7V5 751 752 753 PZM47N 47V - - - PZM8.2N 8V2 821 822 823 PZM51N 51V - - - PZM9.1N 9V1 911 912 913 PZM56N 56V - - - PZM10N 10V 101 102 103 PZM62N 62V - - - B1 B2 PZM11N 11V 111 112 113 PZM68N 68V - - - PZM12N 12V 121 122 123 PZM75N 75V - - - PZM13N 13V 131 132 133 - - - - - 1999 Jan 28 2 Philips Semiconductors Product specification Voltage regulator diodes PZM-N series LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. - MAX. 250 UNIT IF continuous forward current IZSM non-repetitive peak current tp = 100 s; square wave; Tamb = 25 C prior to surge see Tables 1 and 2 mA Ptot total power dissipation Tamb = 25 C - 300 mW Tstg storage temperature -65 +150 C Tj operating junction temperature - 150 C THERMAL CHARACTERISTICS SYMBOL Rth j-s PARAMETER CONDITIONS thermal resistance from junction to soldering point Ts = 60 C VALUE 300 UNIT K/W ELECTRICAL CHARACTERISTICS Tj = 25 C unless otherwise specified. SYMBOL PARAMETER VF forward voltage IR reverse current 1999 Jan 28 CONDITIONS MAX. UNIT IF = 10 mA; see Fig.2 0.9 V IF = 100 mA; see Fig.2 1.1 V PZM2.4N VR = 1 V 50 A PZM2.7N VR = 1 V 20 A PZM3.0N VR = 1 V 10 A PZM3.3N VR = 1 V 5 A PZM3.6N VR = 1 V 5 A PZM3.9N VR = 1 V 3 A PZM4.3N VR = 1 V 3 A PZM4.7N VR = 1 V 3 A PZM5.1N VR = 1.5 V 3 A PZM5.6N VR = 2.5 V 2 A PZM6.2N VR = 3.0 V 2 A PZM6.8N VR = 3.5 V 2 A PZM7.5N VR = 4.0 V 1 A PZM8.2N VR = 5.0 V 700 nA PZM9.1N VR = 6.0 V 500 nA PZM10N VR = 7.0 V 200 nA PZM11N VR = 8.0 V 100 nA PZM12N VR = 9.0 V 100 nA PZM13N VR = 10.0 V 100 nA PZM15N VR = 11.0 V 70 nA PZM16N VR = 12.0 V 70 nA 3 Philips Semiconductors Product specification Voltage regulator diodes SYMBOL IR 1999 Jan 28 PZM-N series PARAMETER CONDITIONS MAX. UNIT reverse current PZM18N VR = 13.0 V 70 nA PZM20N VR = 15.0 V 70 nA PZM22N VR = 17.0 V 70 nA PZM24N VR = 19.0 V 70 nA PZM27N VR = 21.0 V 70 nA PZM30N VR = 23.0 V 70 nA PZM33N VR = 25.0 V 70 nA PZM36N VR = 27.0 V 70 nA PZM39N VR = 0.7 VZnom 50 nA PZM43N VR = 0.7 VZnom 50 nA PZM47N VR = 0.7 VZnom 50 nA PZM51N VR = 0.7 VZnom 50 nA PZM56N VR = 0.7 VZnom 50 nA PZM62N VR = 0.7 VZnom 50 nA PZM68N VR = 0.7 VZnom 50 nA PZM75N VR = 0.7 VZnom 50 nA 4 PZM -XXX B B1 B2 5 MIN. MAX. 2.4N 2.30 2.60 2.7N 2.50 2.90 2.50 2.75 2.65 3.0N 2.80 3.20 2.80 3.05 3.3N 3.10 3.50 3.10 3.35 3.6N 3.40 3.80 3.40 3.9N 3.70 4.10 4.3N 4.01 4.48 4.7N 4.42 5.1N 5.6N IZ = 1 mA B3 IZ = 5 mA MIN. MAX. MIN. MAX. TYP. MAX. - - - - - - 275 400 70 100 -1.6 450 8.00 2.90 - - 300 450 75 100 -2.0 440 8.00 2.95 3.20 - - 325 3.25 3.50 - - 350 500 80 95 -2.1 425 8.00 500 85 95 -2.4 410 8.00 3.65 3.55 3.80 - - 375 500 85 90 -2.4 390 8.00 3.70 3.97 3.87 4.10 - 4.01 4.21 4.15 4.34 4.28 4.48 400 500 85 90 -2.5 370 8.00 410 600 80 90 -2.5 350 8.00 4.90 4.42 4.61 4.55 4.75 4.69 4.90 425 500 50 80 -1.4 325 8.00 4.84 5.37 4.84 5.04 4.98 5.20 5.31 5.92 5.31 5.55 5.49 5.73 5.14 5.37 400 480 40 60 -0.8 300 8.00 5.67 5.92 80 400 15 40 1.2 275 8.00 6.2N 5.86 6.53 5.86 6.12 6.06 6.33 6.26 6.53 40 150 6 10 2.3 250 8.00 6.8N 6.47 7.14 6.47 6.73 7.5N 7.06 7.84 7.06 7.36 6.65 6.93 6.86 7.14 30 80 6 15 3.0 215 8.00 7.28 7.60 7.52 7.84 15 80 2 10 4.0 170 3.50 8.2N 7.76 8.64 7.76 8.10 8.02 8.36 8.28 8.64 20 80 2 10 4.6 150 3.50 9.1N 8.56 9.55 8.56 8.93 8.85 9.23 9.15 9.55 20 100 2 10N 9.45 10.55 9.45 9.87 9.77 10.21 10.11 10.55 20 150 2 10 5.5 120 3.50 10 6.4 110 3.50 11N 10.44 11.56 10.44 10.88 10.76 11.22 11.10 11.56 25 150 2 10 7.4 108 3.00 12N 11.42 12.60 11.42 11.90 11.74 12.24 12.08 12.60 25 150 2 10 8.4 105 3.00 13N 12.47 13.96 12.47 13.03 12.91 13.49 13.37 13.96 25 15N 13.84 15.52 13.84 14.46 14.34 14.98 14.85 15.52 25 170 2 10 9.4 103 2.50 200 3 15 11.4 99 2.00 16N 15.37 17.09 15.37 16.01 15.85 16.51 16.35 17.09 25 200 4 20 12.4 97 1.50 18N 16.94 19.03 16.94 17.70 17.56 18.35 18.21 20N 18.86 21.08 18.86 19.70 19.52 20.39 20.21 19.03 25 225 4 20 14.4 93 1.50 21.08 30 225 4 20 16.4 88 1.50 22N 20.88 23.17 20.88 21.77 21.54 22.47 22.23 23.17 30 250 5 25 18.4 84 1.25 24N 22.93 25.57 22.93 23.96 23.72 24.78 24.54 25.57 30 250 6 30 20.4 80 1.25 - TYP. MAX. TYP. MAX. MAX. Product specification MAX. DIODE NON-REPETITIVE CAP. PEAK REVERSE Cd (pF) CURRENT at IZSM (A) f = 1 MHz; at tp = 100 s; VR = 0 Tamb = 25 C PZM-N series MIN. TEMP. COEFF. SZ (mV/K) at IZ = 5 mA Philips Semiconductors DIFFERENTIAL RESISTANCE rdif () WORKING VOLTAGE VZ (V) at IZ = 5 mA; tm = 40 ms Voltage regulator diodes 1999 Jan 28 Table 1 Per type; PZM2.4N to PZM24N Tj = 25 C unless otherwise specified. PZM -XXX B B1 B2 IZ = 0.5 mA B3 DIODE NON-REPETITIVE CAP. PEAK REVERSE Cd (pF) CURRENT at IZSM (A) f = 1 MHz; at tp = 100 s; VR = 0 Tamb = 25 C IZ = 2 mA TEMP. COEFF. SZ (mV/K) at IZ = 2 mA TYP. MAX. TYP. MAX. 6 MIN. MAX. MIN. MAX. MIN. MAX. MIN. MAX. TYP. MAX. MAX. 27N 25.10 28.90 - - - - - - 35 250 8 40 23.4 73 1.00 30N 28.00 32.00 - - - - - - 35 250 10 40 26.6 66 1.00 33N 31.00 35.00 - - - - - - 40 275 11 40 29.7 60 0.90 36N 34.00 38.00 - - - - - - 40 300 15 60 33.0 59 0.80 39N 37.00 41.00 - - - - - - 40 300 25 75 36.4 58 0.70 43N 40.00 46.00 - - - - - - 45 325 30 80 41.2 56 0.60 47N 44.00 50.00 - - - - - - 45 325 30 90 46.1 55 0.50 51N 48.00 54.00 - - - - - - 45 350 35 110 51.0 52 0.40 56N 52.00 60.00 - - - - - - 50 375 40 120 57.0 49 0.30 62N 58.00 66.00 - - - - - - 60 400 50 140 64.4 44 0.30 68N 64.00 72.00 - - - - - - 75 400 55 160 71.7 40 0.25 75N 70.00 79.00 - - - - - - 85 400 70 175 80.2 35 0.20 Philips Semiconductors DIFFERENTIAL RESISTANCE rdif () WORKING VOLTAGE VZ (V) at IZ = 2 mA; tm = 40 ms Voltage regulator diodes 1999 Jan 28 Table 2 Per type; PZM27N to PZM75N Tj = 25 C unless otherwise specified. Product specification PZM-N series Philips Semiconductors Product specification Voltage regulator diodes PZM-N series GRAPHICAL DATA MBG781 MBG783 300 0 handbook, halfpage handbook, halfpage IF (mA) SZ (mV/K) 4V3 -1 200 3V9 3V6 -2 100 3V3 3V0 2V4 2V7 0 0.6 0.8 VF (V) -3 1.0 0 20 40 IZ (mA) 60 PZM2.4N to PZM4.3N. Tj = 25 C to 150 C. Tj = 25 C. Fig.2 Forward current as a function of forward voltage; typical values. Fig.3 Temperature coefficient as a function of working current; typical values. MBG782 10 handbook, halfpage SZ (mV/K) MBK204 400 handbook, halfpage 12 Ptot (mW) 11 10 300 9V1 5 8V2 7V5 6V8 6V2 200 5V6 5V1 0 4V7 100 -5 0 4 8 12 16 IZ (mA) 0 20 0 50 100 150 Tj (C) PZM4.7N to PZM12N. Tj = 25 C to 150 C. Fig.4 Temperature coefficient as a function of working current; typical values. 1999 Jan 28 Fig.5 Power derating curve. 7 200 Philips Semiconductors Product specification Voltage regulator diodes PZM-N series PACKAGE OUTLINE Plastic surface mounted package; 3 leads SOT346 E D A B X HE v M A 3 Q A A1 1 c 2 e1 bp Lp w M B e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 bp c D E e e1 HE Lp Q v w mm 1.3 1.0 0.1 0.013 0.50 0.35 0.26 0.10 3.1 2.7 1.7 1.3 1.9 0.95 3.0 2.5 0.6 0.2 0.33 0.23 0.2 0.2 OUTLINE VERSION SOT346 1999 Jan 28 REFERENCES IEC JEDEC EIAJ TO-236 SC-59 8 EUROPEAN PROJECTION ISSUE DATE 97-02-28 Philips Semiconductors Product specification Voltage regulator diodes PZM-N series DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1999 Jan 28 9 Philips Semiconductors Product specification Voltage regulator diodes PZM-N series NOTES 1999 Jan 28 10 Philips Semiconductors Product specification Voltage regulator diodes PZM-N series NOTES 1999 Jan 28 11 Philips Semiconductors - a worldwide company Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria: Computerstr. 6, A-1101 WIEN, P.O. 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