PZM9.1NB3,115 - NXP - Datasheet.Directory

DATA SH EET

Product speciﬁcation

Supersedes data of 1997 Dec 15 1999 Jan 28

DISCRETE SEMICONDUCTORS

PZM-N series

Voltage regulator diodes

ook, halfpage

M3D114

1999 Jan 28 2

Philips Semiconductors Product speciﬁcation

Voltage regulator diodes PZM-N series

FEATURES

•Total power dissipation:

max. 300 mW

•Small plastic package suitable for

surface mounted design

•Wide working voltage range:

nom. 2.4 to 75 V (E24 range).

APPLICATIONS

•General regulation functions.

DESCRIPTION

Low power general purpose voltage

regulator diode in a SOT346 (SC59)

plastic package, suitable for surface

mounted design.

PINNING

PIN DESCRIPTION

1 anode

2 not connected

3 cathode

Fig.1 Simplified outline (SOT346; SC59) and symbol.

handbook, halfpage

MAM378

Top view

n.c. 1

MARKING

TYPE

NUMBER MARKING CODE TYPE

NUMBER MARKING CODE

B B1 B2 B3 B B1 B2 B3

PZM2.4N 2V4 −−−PZM15N 15V 151 152 153

PZM2.7N 2V7 271 272 −PZM16N 16V 161 162 163

PZM3.0N 3V0 301 302 −PZM18N 18V 181 182 183

PZM3.3N 3V3 331 332 −PZM20N 20V 201 202 203

PZM3.6N 3V6 361 362 −PZM22N 22V 221 222 223

PZM3.9N 3V9 391 392 −PZM24N 24V 241 242 243

PZM4.3N 4V3 431 432 433 PZM27N 27V −−−

PZM4.7N 4V7 471 472 473 PZM30N 30V −−−

PZM5.1N 5V1 511 512 513 PZM33N 33V −−−

PZM5.6N 5V6 561 562 563 PZM36N 36V −−−

PZM6.2N 6V2 621 622 623 PZM39N 39V −−−

PZM6.8N 6V8 681 682 683 PZM43N 43V −−−

PZM7.5N 7V5 751 752 753 PZM47N 47V −−−

PZM8.2N 8V2 821 822 823 PZM51N 51V −−−

PZM9.1N 9V1 911 912 913 PZM56N 56V −−−

PZM10N 10V 101 102 103 PZM62N 62V −−−

PZM11N 11V 111 112 113 PZM68N 68V −−−

PZM12N 12V 121 122 123 PZM75N 75V −−−

PZM13N 13V 131 132 133 − −−−−

1999 Jan 28 3

Philips Semiconductors Product speciﬁcation

Voltage regulator diodes PZM-N series

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

THERMAL CHARACTERISTICS

ELECTRICAL CHARACTERISTICS

Tj=25°C unless otherwise speciﬁed.

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

IFcontinuous forward current −250 mA

IZSM non-repetitive peak current tp= 100 µs; square wave;

Tamb =25°C prior to surge see Tables 1 and 2

Ptot total power dissipation Tamb =25°C−300 mW

Tstg storage temperature −65 +150 °C

Tjoperating junction temperature −150 °C

SYMBOL PARAMETER CONDITIONS VALUE UNIT

Rth j-s thermal resistance from junction to soldering point Ts=60°C 300 K/W

SYMBOL PARAMETER CONDITIONS MAX. UNIT

VFforward voltage IF= 10 mA; see Fig.2 0.9 V

IF= 100 mA; see Fig.2 1.1 V

IRreverse current

PZM2.4N VR=1V 50 µA

PZM2.7N VR=1V 20 µA

PZM3.0N VR=1V 10 µA

PZM3.3N VR=1V 5 µA

PZM3.6N VR=1V 5 µA

PZM3.9N VR=1V 3 µA

PZM4.3N VR=1V 3 µA

PZM4.7N VR=1V 3 µA

PZM5.1N VR= 1.5 V 3 µA

PZM5.6N VR= 2.5 V 2 µA

PZM6.2N VR= 3.0 V 2 µA

PZM6.8N VR= 3.5 V 2 µA

PZM7.5N VR= 4.0 V 1 µA

PZM8.2N VR= 5.0 V 700 nA

PZM9.1N VR= 6.0 V 500 nA

PZM10N VR= 7.0 V 200 nA

PZM11N VR= 8.0 V 100 nA

PZM12N VR= 9.0 V 100 nA

PZM13N VR= 10.0 V 100 nA

PZM15N VR= 11.0 V 70 nA

PZM16N VR= 12.0 V 70 nA

1999 Jan 28 4

Philips Semiconductors Product speciﬁcation

Voltage regulator diodes PZM-N series

IRreverse current

PZM18N VR= 13.0 V 70 nA

PZM20N VR= 15.0 V 70 nA

PZM22N VR= 17.0 V 70 nA

PZM24N VR= 19.0 V 70 nA

PZM27N VR= 21.0 V 70 nA

PZM30N VR= 23.0 V 70 nA

PZM33N VR= 25.0 V 70 nA

PZM36N VR= 27.0 V 70 nA

PZM39N VR= 0.7 VZnom 50 nA

PZM43N VR= 0.7 VZnom 50 nA

PZM47N VR= 0.7 VZnom 50 nA

PZM51N VR= 0.7 VZnom 50 nA

PZM56N VR= 0.7 VZnom 50 nA

PZM62N VR= 0.7 VZnom 50 nA

PZM68N VR= 0.7 VZnom 50 nA

PZM75N VR= 0.7 VZnom 50 nA

SYMBOL PARAMETER CONDITIONS MAX. UNIT

1999 Jan 28 5

Philips Semiconductors Product speciﬁcation

Voltage regulator diodes PZM-N series

Table 1 Per type; PZM2.4N to PZM24N

Tj=25°C unless otherwise specified.

PZM

-XXX

WORKING VOLTAGE

VZ(V)

at IZ= 5 mA; tm=40ms

DIFFERENTIAL

RESISTANCE

rdif (Ω)

TEMP.

COEFF.

SZ(mV/K)

IZ=5mA

DIODE

CAP.

Cd(pF)

f = 1 MHz;

VR=0

NON-REPETITIVE

PEAK REVERSE

CURRENT

IZSM (A)

at tp= 100 µs;

Tamb =25°C

B B1B2B3I

=1mA I

Z=5mA

MIN. MAX. MIN. MAX. MIN. MAX. MIN. MAX. TYP. MAX. TYP. MAX. TYP. MAX. MAX.

2.4N 2.30 2.60 −−−−−−275 400 70 100 −1.6 450 8.00

2.7N 2.50 2.90 2.50 2.75 2.65 2.90 −−300 450 75 100 −2.0 440 8.00

3.0N 2.80 3.20 2.80 3.05 2.95 3.20 −−325 500 80 95 −2.1 425 8.00

3.3N 3.10 3.50 3.10 3.35 3.25 3.50 −−350 500 85 95 −2.4 410 8.00

3.6N 3.40 3.80 3.40 3.65 3.55 3.80 −−375 500 85 90 −2.4 390 8.00

3.9N 3.70 4.10 3.70 3.97 3.87 4.10 −−400 500 85 90 −2.5 370 8.00

4.3N 4.01 4.48 4.01 4.21 4.15 4.34 4.28 4.48 410 600 80 90 −2.5 350 8.00

4.7N 4.42 4.90 4.42 4.61 4.55 4.75 4.69 4.90 425 500 50 80 −1.4 325 8.00

5.1N 4.84 5.37 4.84 5.04 4.98 5.20 5.14 5.37 400 480 40 60 −0.8 300 8.00

5.6N 5.31 5.92 5.31 5.55 5.49 5.73 5.67 5.92 80 400 15 40 1.2 275 8.00

6.2N 5.86 6.53 5.86 6.12 6.06 6.33 6.26 6.53 40 150 6 10 2.3 250 8.00

6.8N 6.47 7.14 6.47 6.73 6.65 6.93 6.86 7.14 30 80 6 15 3.0 215 8.00

7.5N 7.06 7.84 7.06 7.36 7.28 7.60 7.52 7.84 15 80 2 10 4.0 170 3.50

8.2N 7.76 8.64 7.76 8.10 8.02 8.36 8.28 8.64 20 80 2 10 4.6 150 3.50

9.1N 8.56 9.55 8.56 8.93 8.85 9.23 9.15 9.55 20 100 2 10 5.5 120 3.50

10N 9.45 10.55 9.45 9.87 9.77 10.21 10.11 10.55 20 150 2 10 6.4 110 3.50

11N 10.44 11.56 10.44 10.88 10.76 11.22 11.10 11.56 25 150 2 10 7.4 108 3.00

12N 11.42 12.60 11.42 11.90 11.74 12.24 12.08 12.60 25 150 2 10 8.4 105 3.00

13N 12.47 13.96 12.47 13.03 12.91 13.49 13.37 13.96 25 170 2 10 9.4 103 2.50

15N 13.84 15.52 13.84 14.46 14.34 14.98 14.85 15.52 25 200 3 15 11.4 99 2.00

16N 15.37 17.09 15.37 16.01 15.85 16.51 16.35 17.09 25 200 4 20 12.4 97 1.50

18N 16.94 19.03 16.94 17.70 17.56 18.35 18.21 19.03 25 225 4 20 14.4 93 1.50

20N 18.86 21.08 18.86 19.70 19.52 20.39 20.21 21.08 30 225 4 20 16.4 88 1.50

22N 20.88 23.17 20.88 21.77 21.54 22.47 22.23 23.17 30 250 5 25 18.4 84 1.25

24N 22.93 25.57 22.93 23.96 23.72 24.78 24.54 25.57 30 250 6 30 20.4 80 1.25

1999 Jan 28 6

Philips Semiconductors Product speciﬁcation

Voltage regulator diodes PZM-N series

Table 2 Per type; PZM27N to PZM75N

Tj=25°C unless otherwise specified.

PZM

-XXX

WORKING VOLTAGE

VZ(V)

at IZ= 2 mA; tm=40ms

DIFFERENTIAL

RESISTANCE

rdif (Ω)

TEMP.

COEFF.

SZ(mV/K)

IZ=2mA

DIODE

CAP.

Cd(pF)

f = 1 MHz;

VR=0

NON-REPETITIVE

PEAK REVERSE

CURRENT

IZSM (A)

at tp= 100 µs;

Tamb =25°C

B B1B2B3I

= 0.5 mA IZ=2mA

MIN. MAX. MIN. MAX. MIN. MAX. MIN. MAX. TYP. MAX. TYP. MAX. TYP. MAX. MAX.

27N 25.10 28.90 −−−−−−35 250 8 40 23.4 73 1.00

30N 28.00 32.00 −−−−−−35 250 10 40 26.6 66 1.00

33N 31.00 35.00 −−−−−−40 275 11 40 29.7 60 0.90

36N 34.00 38.00 −−−−−−40 300 15 60 33.0 59 0.80

39N 37.00 41.00 −−−−−−40 300 25 75 36.4 58 0.70

43N 40.00 46.00 −−−−−−45 325 30 80 41.2 56 0.60

47N 44.00 50.00 −−−−−−45 325 30 90 46.1 55 0.50

51N 48.00 54.00 −−−−−−45 350 35 110 51.0 52 0.40

56N 52.00 60.00 −−−−−−50 375 40 120 57.0 49 0.30

62N 58.00 66.00 −−−−−−60 400 50 140 64.4 44 0.30

68N 64.00 72.00 −−−−−−75 400 55 160 71.7 40 0.25

75N 70.00 79.00 −−−−−−85 400 70 175 80.2 35 0.20

1999 Jan 28 7

Philips Semiconductors Product speciﬁcation

Voltage regulator diodes PZM-N series

GRAPHICAL DATA

Fig.2 Forward current as a function of

forward voltage; typical values.

Tj=25°C.

handbook, halfpage

0.6 1.0

300

100

200

MBG781

0.8 VF (V)

(mA)

Fig.3 Temperature coefficient as a function of

working current; typical values.

PZM2.4N to PZM4.3N.

Tj=25°Cto150°C.

handbook, halfpage

060

−2

−3

−1

MBG783

20 40 IZ (mA)

(mV/K) 4V3

3V9

3V6

3V0

2V4

2V7

3V3

Fig.4 Temperature coefficient as a function of

working current; typical values.

PZM4.7N to PZM12N.

Tj=25°Cto150°C.

handbook, halfpage

02016

−5

MBG782

4812 I

(mA)

(mV/K)

4V7

9V1

8V2

7V5

6V8 6V2

5V6

5V1

Fig.5 Power derating curve.

handbook, halfpage

0 50 100 200

Ptot

(mW)

Tj (°C)

400

300

100

200

150

MBK204

1999 Jan 28 8

Philips Semiconductors Product speciﬁcation

Voltage regulator diodes PZM-N series

PACKAGE OUTLINE

UNIT A

cDE e

Qwv

REFERENCES

OUTLINE

VERSION EUROPEAN

PROJECTION ISSUE DATE

IEC JEDEC EIAJ

mm 0.50

0.35 0.26

0.10 3.1

2.7 1.7

1.3 0.95

1.9 3.0

2.5 0.33

0.23 0.2

0.2

DIMENSIONS (mm are the original dimensions)

0.6

0.2

SOT346 TO-236 SC-59

detail X

0 1 2 mm

scale

1.3

1.0 0.1

0.013

Plastic surface mounted package; 3 leads SOT346

97-02-28

1999 Jan 28 9

Philips Semiconductors Product speciﬁcation

Voltage regulator diodes PZM-N series

DEFINITIONS

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these

products can reasonably be expected to result in personal injury. Philips customers using or selling these products for

use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such

improper use or sale.

Data Sheet Status

Objective speciﬁcation This data sheet contains target or goal speciﬁcations for product development.

Preliminary speciﬁcation This data sheet contains preliminary data; supplementary data may be published later.

Product speciﬁcation This data sheet contains ﬁnal product speciﬁcations.

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or

more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation

of the device at these or at any other conditions above those given in the Characteristics sections of the speciﬁcation

is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the speciﬁcation.

1999 Jan 28 10

Philips Semiconductors Product speciﬁcation

Voltage regulator diodes PZM-N series

NOTES

1999 Jan 28 11

Philips Semiconductors Product speciﬁcation

Voltage regulator diodes PZM-N series

NOTES

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Printed in The Netherlands 115002/00/02/pp12 Date of release: 1999 Jan 28 Document order number: 9397 750 04983