1. Product profile
1.1 General description
Low capacitance unidirectional double ElectroStatic Discharge (ESD) protection diode in
a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package designed to
protect up to two signal lines from the damage caused by ESD and other transients.
1.2 Features
1.3 Applications
1.4 Quick reference data
PESD36VS2UT
Low capacitance unidirectional double ESD protection diode
Rev. 01 — 16 July 2009 Product data sheet
nUnidirectional ESD protection of
two lines
nESD protection up to 30 kV
nLow diode capacitance: Cd=17pF nIEC 61000-4-2; level 4 (ESD)
nMax. peak pulse power: PPP = 160 W nIEC 61000-4-5 (surge); IPP = 2.5 A
nLow clamping voltage: VCL =55V nAEC-Q101 qualified
nUltra low leakage current: IRM ≤1µA
nComputers and peripherals nPortable electronics
nAudio and video equipment nCommunication systems
nCellular handsets and accessories n10/100 Mbit/s Ethernet
nSubscriber Identity Module (SIM) card
protection
Table 1. Quick reference data
T
amb
=25
°
C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
Per diode
VRWM reverse standoff voltage - - 36 V
Cddiode capacitance f = 1 MHz; VR=0V- 1735pF
PESD36VS2UT_1 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 01 — 16 July 2009 2 of 12
NXP Semiconductors PESD36VS2UT
Low capacitance unidirectional double ESD protection diode
2. Pinning information
3. Ordering information
4. Marking
[1] * = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
5. Limiting values
[1] Non-repetitive current pulse 8/20 µs exponential decay waveform according to IEC 61000-4-5.
[2] Measured from pin 1 or 2 to pin 3.
Table 2. Pinning
Pin Description Simplified outline Graphic symbol
1 cathode (diode 1)
2 cathode (diode 2)
3 common anode
12
3
006aaa154
12
3
Table 3. Ordering information
Type number Package
Name Description Version
PESD36VS2UT - plastic surface-mounted package; 3 leads SOT23
Table 4. Marking codes
Type number Marking code[1]
PESD36VS2UT LF*
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
Per diode
PPP peak pulse power tp= 8/20 µs[1][2] - 160 W
IPP peak pulse current tp= 8/20 µs[1][2] - 2.5 A
Per device
Tjjunction temperature - 150 °C
Tamb ambient temperature −55 +150 °C
Tstg storage temperature −65 +150 °C
PESD36VS2UT_1 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 01 — 16 July 2009 3 of 12
NXP Semiconductors PESD36VS2UT
Low capacitance unidirectional double ESD protection diode
[1] Device stressed with ten non-repetitive ESD pulses.
[2] Measured from pin 1 to pin 2.
Table 6. ESD maximum ratings
T
amb
=25
°
C unless otherwise specified.
Symbol Parameter Conditions Min Max Unit
Per diode
VESD electrostatic discharge voltage IEC 61000-4-2
(contact discharge) [1][2] -30kV
machine model [2] - 400 V
MIL-STD-883 (human
body model) -8kV
Table 7. ESD standards compliance
Standard Conditions
Per diode
IEC 61000-4-2; level 4 (ESD) > 15 kV (air); > 8 kV (contact)
MIL-STD-883; class 3 (human body model) > 4 kV
Fig 1. 8/20 µs pulse waveform according to
IEC 61000-4-5 Fig 2. ESD pulse waveform according to
IEC 61000-4-2
t (µs)
0403010 20
001aaa630
40
80
120
IPP
(%)
0
e−t
100 % IPP; 8 µs
50 % IPP; 20 µs
001aaa631
IPP
100 %
90 %
t
30 ns 60 ns
10 %
tr = 0.7 ns to 1 ns
PESD36VS2UT_1 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 01 — 16 July 2009 4 of 12
NXP Semiconductors PESD36VS2UT
Low capacitance unidirectional double ESD protection diode
6. Characteristics
[1] Measured from pin 1 or 2 to pin 3.
[2] Non-repetitive current pulse 8/20 µs exponential decay waveform according to IEC 61000-4-5.
Table 8. Characteristics
T
amb
=25
°
C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
Per diode
VRWM reverse standoff voltage - - 36 V
IRM reverse leakage current VRWM = 30 V - < 0.02 1 µA
VBR breakdown voltage IR= 5 mA 40 44 - V
Cddiode capacitance f = 1 MHz;
VR=0V [1] - 1735pF
VCL clamping voltage IPP =1A [1][2] - 5560V
rdif differential resistance IR= 0.5 mA - - 300 Ω
f = 1 MHz; Tamb =25°C
Fig 3. Diode capacitance as a function of reverse voltage; typical values
VR (V)
0403010 20
006aab615
10
5
15
20
Cd
(pF)
0
PESD36VS2UT_1 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 01 — 16 July 2009 5 of 12
NXP Semiconductors PESD36VS2UT
Low capacitance unidirectional double ESD protection diode
Measured from pin 1 or 2 to pin 3. Measured from pin 1 to pin 2.
Fig 4. V-I characteristics for a unidirectional
ESD protection diode Fig 5. V-I characteristics for a bidirectional
ESD protection diode
006aaa407
−VCL −VBR −VRWM −IRM
−IR
−IPP
V
I
P-N
−+
006aaa676
−VCL −VBR −VRWM VCL
VBR
VRWM
−IRM
IRM
−IR
IR
−IPP
IPP
−+
PESD36VS2UT_1 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 01 — 16 July 2009 6 of 12
NXP Semiconductors PESD36VS2UT
Low capacitance unidirectional double ESD protection diode
Fig 6. ESD clamping test setup and waveforms
006aab616
450 Ω
50 Ω
Note 1: IEC61000-4-2 network
CZ = 150 pF; RZ = 330 Ω
RG 223/U
50 Ω coax
RZ
CZ
ESD TESTER 4 GHz DIGITAL
OSCILLOSCOPE
10×
ATTENUATOR
vertical scale = 200 V/div
horizontal scale = 50 ns/div
vertical scale = 200 V/div
horizontal scale = 50 ns/div vertical scale = 10 V/div
horizontal scale = 50 ns/div
GND GND
GND
unclamped +1 kV ESD voltage waveform
(IEC61000-4-2 network) clamped +1 kV ESD voltage waveform
(IEC61000-4-2 network)
GND
unclamped −1 kV ESD voltage waveform
(IEC61000-4-2 network) clamped −1 kV ESD voltage waveform
(IEC61000-4-2 network)
note 1
DUT: PESD36VS2UT
vertical scale = 10 V/div
horizontal scale = 50 ns/div
PESD36VS2UT_1 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 01 — 16 July 2009 7 of 12
NXP Semiconductors PESD36VS2UT
Low capacitance unidirectional double ESD protection diode
7. Application information
The PESD36VS2UT is designed for the protection of up to two unidirectional data or
signal lines from the damage caused by ESD and surge pulses. The devices may be used
on lines where the signal polarities are either positive or negative with respect to ground.
The PESD36VS2UT provides a surge capability of 160 W per line for an 8/20 µs
waveform.
Circuit board layout and protection device placement
Circuit board layout is critical for the suppression of ESD, Electrical Fast Transient (EFT)
and surge transients. The following guidelines are recommended:
1. Place the device as close to the input terminal or connector as possible.
2. The path length between the device and the protected line should be minimized.
3. Keep parallel signal paths to a minimum.
4. Avoid running protected conductors in parallel with unprotected conductors.
5. Minimize all Printed-Circuit Board (PCB) conductive loops including power and
ground loops.
6. Minimize the length of the transient return path to ground.
7. Avoid using shared transient return paths to a common ground point.
8. Ground planes should be used whenever possible. For multilayer PCBs, use ground
vias.
8. Test information
8.1 Quality information
This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard
Q101 - Stress test qualification for discrete semiconductors
, and is
suitable for use in automotive applications.
Fig 7. Application diagram
006aab617
PESD36VS2UT
line 1 to be protected
unidirectional protection
of two lines bidirectional protection
of one line
line 2 to be protected
GND
PESD36VS2UT
line 1 to be protected
GND
PESD36VS2UT_1 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 01 — 16 July 2009 8 of 12
NXP Semiconductors PESD36VS2UT
Low capacitance unidirectional double ESD protection diode
9. Package outline
10. Packing information
[1] For further information and the availability of packing methods, see Section 14.
Fig 8. Package outline PESD36VS2UT (SOT23/TO-236AB)
04-11-04Dimensions in mm
0.45
0.15
1.9
1.1
0.9
3.0
2.8
2.5
2.1 1.4
1.2
0.48
0.38 0.15
0.09
12
3
Table 9. Packing methods
The indicated -xxx are the last three digits of the 12NC ordering code.
[1]
Type number Package Description Packing quantity
3000 10000
PESD36VS2UT SOT23 4 mm pitch, 8 mm tape and reel -215 -135
PESD36VS2UT_1 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 01 — 16 July 2009 9 of 12
NXP Semiconductors PESD36VS2UT
Low capacitance unidirectional double ESD protection diode
11. Soldering
Fig 9. Reflow soldering footprint PESD36VS2UT (SOT23/TO-236AB)
Fig 10. Wave soldering footprint PESD36VS2UT (SOT23/TO-236AB)
solder lands
solder resist
occupied area
solder paste
sot023_fr
0.5
(3×)
0.6
(3×)
0.6
(3×)
0.7
(3×)
3
1
3.3
2.9
1.7
1.9
2
Dimensions in mm
solder lands
solder resist
occupied area
preferred transport direction during soldering
sot023_fw
2.8
4.5
1.4
4.6
1.4
(2×)
1.2
(2×)
2.2
2.6
Dimensions in mm
PESD36VS2UT_1 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 01 — 16 July 2009 10 of 12
NXP Semiconductors PESD36VS2UT
Low capacitance unidirectional double ESD protection diode
12. Revision history
Table 10. Revision history
Document ID Release date Data sheet status Change notice Supersedes
PESD36VS2UT_1 20090716 Product data sheet - -
PESD36VS2UT_1 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 01 — 16 July 2009 11 of 12
NXP Semiconductors PESD36VS2UT
Low capacitance unidirectional double ESD protection diode
13. Legal information
13.1 Data sheet status
[1] Please consult the most recently issued document before initiating or completing a design.
[2] The term ‘short data sheet’ is explained in section “Definitions”.
[3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
13.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
13.3 Disclaimers
General — Information in this document is believed to be accurate and
reliable. However, NXP Semiconductors does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.nxp.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from national authorities.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
13.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
14. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Document status[1][2] Product status[3] Definition
Objective [short] data sheet Development This document contains data from the objective specification for product development.
Preliminary [short] data sheet Qualification This document contains data from the preliminary specification.
Product [short] data sheet Production This document contains the product specification.
NXP Semiconductors PESD36VS2UT
Low capacitance unidirectional double ESD protection diode
© NXP B.V. 2009. All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 16 July 2009
Document identifier: PESD36VS2UT_1
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
15. Contents
1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1 General description. . . . . . . . . . . . . . . . . . . . . . 1
1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.4 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1
2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2
3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2
4 Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
6 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 4
7 Application information. . . . . . . . . . . . . . . . . . . 7
8 Test information. . . . . . . . . . . . . . . . . . . . . . . . . 7
8.1 Quality information . . . . . . . . . . . . . . . . . . . . . . 7
9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8
10 Packing information. . . . . . . . . . . . . . . . . . . . . . 8
11 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
12 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 10
13 Legal information. . . . . . . . . . . . . . . . . . . . . . . 11
13.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 11
13.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
13.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 11
13.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 11
14 Contact information. . . . . . . . . . . . . . . . . . . . . 11
15 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
