SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 PACKAGE BVcEO hee VcE (sat) fr Cop @ 10V Ic Pr Device Type @10mA Typical 1MHz Continuous @ 25C (V) Min. Max. @ Ic(mA)|Vc_e (V) Max. @ I{mA) fg(mA) (MHz) Typical (Pe) = (mA) (mw) 2N3903 40 300 2N3904 40 350 2N3905 40 250 2N3906 40 300 2N4123 30 300 2N4124 _ 25 350 2N4125 / 30 250 2N4126 | 25 300 2N4400 40 225 2N4401_ | 40 275 2N4402 40 300 2N4403 40 350 2N4409 50 100 2N4410 100 2N5088 75 2N5089 75 2N5219 2N5220 2N5221 2N5223 2N5225 2N5226 2N5227 GES929 GES930 GES2221 GES2221A GES2222 GES2222A GES2483 GES2906 GES2907 GES5305 GES5306 GES5307 GES5308 GES5368 GES5369 GES5370 GES5371 GES5372 GES5373 GES5374 103Silicon i | = Fr Transistors 2N5088 2N5089 The General Electric 2N5088 and 2N5089 are Silicon NPN Planar Epitaxial Passivated Transistors designed for low level, low noise amplifier applications. absolute maximum ratingS: (7, = 25C unless otherwise specified) 2N5088 2N5089 UNITS Voltages |. EMITTER Collector to Emitter Vero 30 25 Volts 10-92 3 COLLECTOR Collector to Base VcBo 35 30 Volts INCH Emitter to Base VEBO 4.5 4.5 Volts ZO? 0121 Current 407; 482[o16loi9| 3 Collector Ic 50 mA 3180419 1B es Dissipation e (241 2870 655) 10 Total Power Ta < 25C P; 350 mW 4. Total Power Te < 25C Py 1.0 Watt eo eE Derating Factor T, > 25C 2.8 mwW/C Derating Factor Te > 25C 8 mW/C Temperature T THREE LEADS ; Operating Ty 55C to +150C C 2,CONTOUR OF PACKAGE UNCONTROLLED OUTSIDE Some Tyg 55C to #150C C SITES A OE CETTE, Lead (1/16" + 1/32" from Ty +230C C FROM THE SEATING PLANE. DIAMETER IS UN- : CONTROLLED IN L, AND BEYOND I2.70MM(500") case for 10 sec.) FROM SEATING PLANE. electrical characteristics: (1, = 25C unless otherwise specified) 2N5088 2N5089 SYMBOL MIN. MAX. MIN. MAX. UNITS Static Characteristics Collector-Emitter Breakdown Voltage (Ic = 1mA, Ig = 0) ViBR)CEO 30 25 _ Volts Collector-Base Breakdown Voltage (Ic = 100A, Ip = 0) Vipr)cBo 35 30 - Volts Collector Cutoff Current (Vcp = 20V, Iz = 0) Icpo 50 _ nA (Vo = 15V, Tz = 0) IcBo ~ - - 50 nA Emitter Cutoff Current (Vep = 3V, Ic = 0) lERo 50 50 nA (VER = 4.5V, Ie = 0) lERo _ 100 _ 100 nA Forward Current Transfer Ratio (Ic = 100HA, Veg = S5V) her 300 900 400 1200 (Ic = ImA, Ver = 5V) hpp 350 _ 450 Uc = 10mA, Vcr = SV) ther 300 _ 400 Collector-Emitter Saturation Voltage (Ic = 10mA, Ip = 1mA) tVoK(at) - 5 - 5 Volts Base-Emitter On- Voltage a = 10mA, Vcr = 5V) tVgE(on) 457 _ 8 _ 8 Volts2N5088 2N5089 Dynamic Characteristics Gain Bandwidth Product (Vcr = 5V, Ic = 5dQuA, f=20 MHz) Collector-Base Capacitance (Vcp = 5V, Ip =0, f= 100 kHz) Emitter-Base Capacitance (Vge = .5V, Ic = 0, f = 100 kHz) Forward Current & Transfer Ratio (Vcr = SV, Ic = ImA, F=1 kHz) Noise Figure (Vcr = 5V, Ic = 100uA, Rs, = 10KQ SYMBOL he e ; NF BW = 15.7kHz f = 10Hz to 1OkHz) *Indicates JEDEC Registered Data. Pulse Width < 300us, Duty Cycle < 2%. a 7ad NORMALIZED FORWARD CURRENT TRANSFER RATIO FORWARD CURRENT TRANSFER RATIO NORMALIZED TO .1mA VALUE VS. COLLECTOR CURRENT CAL 2N5088 ,2N5089 FE VS COLLECTOR CURRENT Voce *5V Ig COLLECTOR CURRENT- mA 458 MIN. 50 350 2N5088 MAX. 4.0 10 1400 MIN. 50 450 2N5089 MAX. 4.0 10 1800 UNITS MHz pF dB2N5088, 2N5089 TYPICAL BASE EMITTER ON VOLTAGE CHARACTERSTICS } -VOLTS BASE EMITTER SATURATION VOLTAGE -S8ASE EMITTER VOLTAGE Vee Vee 8 Ig-COLLECTOR CURRENT -mA BASE EMITTER VOLTAGE AND BASE EMITTER SATURATION VOLTAGE VS. COLLECTOR CURRENT 2N5088, 2N5089 TYPICAL 25C Bei00 55C B=10 Vog (sat) COLLECTOR EMITTER SATURATION VOLTAGE - VOLTS 10 I Ig - COLLECTOR CURRENT- mA COLLECTOR EMITTER SATURATION VOLTAGE VS. COLLECTOR CURRENT 2N5088, 2N5089 f= (KHz Vor *SVOLTS Ty "25C NF -NOISE FIGURE - dB ot ' to 100 1000 Rg-SOURCE RESISTANCE K wu NOISE FIGURE VS. SOURCE RESISTANCE 459 2N5088 2N5089 oO A ' lo oo2N5088 2N5089 iKHz HYBRID PARAMETERS NORMALIZED TO imA VALUE NF- NOISE FIGURE-dB TYPICAL 2N5088,2N5089 Voge = 5 Ta 25C f= 1KHe 25 4 6 eo is 2 28 4 To - COLLECTOR CURRENT mA 1kHz HYBRID PARAMETERS VS. COLLECTOR CURRENT Go 8, 2N5089 Vog* 5 VOLTS e25ec f- FREQUENCY -Mz NOISE FIGURE VS. FREQUENCY 0 460 IKHz HYBRID PARAMETERS NORMALIZED TO THE 5 VOLT VALUE 1000 2 2N5088, 2N5089 Tg elma Tyo 25C f = IKHz 4 6 6 io 12 14 16 618 6200622 624 626 et Veg ~ COLLECTOR EMITTER VOLTAGE - VOLTS 1kHz HYBRID PARAMETERS VS. COLLECTOR CURRENT