AUTOMOTIVE GRADE Features Advanced Planar Technology Low On-Resistance Logic Level Gate Drive Dual N and P Channel MOSFET Dynamic dv/dt Rating 150C Operating Temperature Fast Switching Full Avalanche Rated Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * S1 AUIRF9952Q N-CHANNEL MOSFET 1 8 D1 G1 2 7 D1 S2 3 6 D2 4 5 D2 G2 N-CH P-CH 30V -30V 0.10 0.25 3.5A -2.3A VDSS RDS(on) max. P-CHANNEL MOSFET Top View ID Description Specifically designed for Automotive applications, this cellular design of HEXFET(R) Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in Automotive and a wide variety of other applications. Base part number Package Type AUIRF952Q SO-8 SO-8 AUIRF9952Q G Gate D Drain Standard Pack Form Quantity Tape and Reel 4000 S Source Orderable Part Number AUIRF9952QTR Absolute Maximum Ratings Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25C, unless otherwise specified. Symbol ID @ TA = 25C ID @ TA = 70C IDM PD @TA = 25C PD @TA = 70C Parameter 10 Sec. Pulsed Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Maximum Power Dissipation Maximum Power Dissipation N-Channel 3.5 2.8 16 Gate-to-Source Voltage Single Pulse Avalanche Energy (Thermally Limited) Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Thermal Resistance Symbol RJA Parameter Junction-to-Ambient ( PCB Mount, steady state) -1.8 -10 44 2.0 A W W/C 0.016 20 57 -1.3 0.25 5.0 Units -2.3 2.0 1.3 Linear Derating Factor VGS EAS IAR EAR dv/dt TJ TSTG Max. P-Channel -5.0 -55 to + 150 V mJ A mJ V/ns C Typ. Max. Units --- 62.5 C/W HEXFET(R) is a registered trademark of Infineon. *Qualification standards can be found at www.infineon.com 1 2015-10-5 AUIRF9952Q Static @ TJ = 25C (unless otherwise specified) Parameter V(BR)DSS Drain-to-Source Breakdown Voltage V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch VGS(th) Gate Threshold Voltage gfs Forward Trans conductance IDSS Drain-to-Source Leakage Current IGSS Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-P N-P Min. Typ. 30 -30 --- --- --- --- --- --- 1.0 -1.0 --- --- --- --- --- --- --- --- --- --- 0.015 -0.015 0.08 0.12 0.165 0.290 --- --- 12 2.4 --- --- --- --- --- --- Max. Units --- --- --- --- 0.10 0.15 0.250 0.400 3.0 -3.0 --- --- 2.0 -2.0 25 -25 100 100 Conditions VGS = 0V, ID = 250A V VGS = 0V, ID = -250A Reference to 25C, ID = 1mA V/C Reference to 25C, ID = -1mA VGS = 10V, ID = 2.2A VGS = 4.5V, ID = 1.0A VGS = -10V, ID = -1.0A VGS = -4.5V, ID = -0.5A VDS = VGS, ID = 250A V VDS = VGS, ID = -250A VDS = 15V, ID = 3.5A S VDS = -15V, ID = -2.3A VDS =24V, VGS = 0V VDS = -24V,VGS = 0V A VDS =24V, VGS = 0V ,TJ = 125C VDS = -24V,VGS = 0V,TJ = 125C VGS = 20V nA VGS = 20V Dynamic Electrical Characteristics @ TJ = 25C (unless otherwise specified) Qg Total Gate Charge Qgs Gate-to-Source Charge Qgd Gate-to-Drain Charge td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch --- --- --- --- --- --- --- --- 6.9 6.1 1.0 1.7 1.8 1.1 6.2 9.7 14 12 2.0 3.4 3.5 2.2 12 19 N-Ch --- 8.8 18 P-Ch --- 14 28 N-Ch --- 13 26 P-Ch --- 20 40 VDD = -10V,ID = -1.0A,RG = 6.0 N-Ch --- 3.0 6.0 RD = 10 P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch --- --- --- --- --- --- --- 6.9 190 190 120 110 61 54 14 --- --- --- --- --- --- N-Channel VGS = 0V,VDS = 15V, = 1.0MHz P-Channel VGS = 0V,VDS = -15V, = 1.0MHz Min. Typ. nC N-Channel ID = 1.8A, VDS = 10V,VGS = 10V P-Channel ID = -2.3A,VDS = -10V,VGS = -10V N-Channel VDD = 10V,ID = 1.0A,RG = 6.0 ns pF RD = 10 P-Channel Diode Characteristics Parameter IS Continuous Source Current (Body Diode) ISM Pulsed Source Current (Body Diode) VSD Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge ton Forward Turn-On Time Max. Units Conditions N-Ch --- --- 1.7 P-Ch --- --- -1.3 A N-Ch --- --- 16 P-Ch --- --- -16 N-Ch --- 0.82 1.2 TJ = 25C,IS = 1.25A,VGS = 0V V P-Ch --- -0.82 -1.2 TJ = 25C,IS = -1.25A,VGS = 0V N-Ch --- 27 53 N-Channel ns P-Ch --- 27 54 TJ = 25C ,IF = 1.25A, di/dt = 100A/s N-Ch --- 28 57 P-Channel nC TJ = 25C,IF = -1.25A, di/dt = 100A/s P-Ch --- 31 62 Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Notes: Repetitive rating; pulse width limited by max. junction temperature. (See fig.23) N-Channel ISD 2.0A, di/dt 100A/s, VDD V(BR)DSS, TJ 150C. P-Channel ISD -1.3A, di/dt 84A/s, VDD V(BR)DSS, TJ 150C. NChannel Starting TJ = 25C, L = 22mH RG = 25, IAS = 2.0A.(See Figure 12) PChannel Starting TJ = 25C, L = 67mH RG = 25, IAS = -1.3A. Pulse width 300s; duty cycle 2%. Surface mounted on FR-4 board , t 10sec. 2 2015-10-5 AUIRF9952Q N-Channel 100 100 VGS 15V 10V 7.0V 5.5V 4.5V 4.0V 3.5V BOTTOM 3.0V VGS 15V 10V 7.0V 5.5V 4.5V 4.0V 3.5V BOTTOM 3.0V TOP I D, Drain-to-Source Current (A) I D , Drain-to-Source Current (A) TOP 10 3.0V 20s PULSE WIDTH TJ = 25C A 1 0.1 1 10 3.0V 20s PULSE WIDTH TJ = 150C A 1 10 0.1 V DS , Drain-to-Source Voltage (V) 100 100 ISD , Reverse Drain Current (A) I D , Drain-to-Source Current (A) 10 Fig. 2 Typical Output Characteristics Fig. 1 Typical Output Characteristics TJ = 25C 10 TJ = 150C VDS = 10V 20s PULSE WIDTH 1 3.0 3.5 4.0 4.5 5.0 5.5 A 6.0 VGS , Gate-to-Source Voltage (V) Fig. 3 Typical Transfer Characteristics 3 1 VDS , Drain-to-Source Voltage (V) 10 TJ = 150C TJ = 25C 1 VGS = 0V 0.1 0.4 0.6 0.8 1.0 1.2 A 1.4 VSD , Source-to-Drain Voltage (V) Fig. 4 Typical Source-Drain Diode Forward Voltage 2015-10-5 AUIRF9952Q N-Channel 0.12 ID = 2.2A RDS (on) , Drain-to-Source On Resistance () RDS(on) , Drain-to-Source On Resistance (Normalized) 2.0 1.5 1.0 0.5 0.0 -60 -40 -20 VGS = 10V 0 20 40 60 80 100 120 140 160 0.10 VGS = 4.5V 0.08 VGS = 10V 0.06 0.04 TJ , Junction Temperature ( C) 0 2 4 6 8 10 12 A I D , Drain Current (A) Fig 5. Normalized On-Resistance Vs. Temperature Fig 6. Typical On-Resistance Vs. Drain Current RDS (on) , Drain-to-Source On Resistance () 0.14 0.12 0.10 0.08 I D = 3.5A 0.06 0.04 0.02 0.00 0 3 6 9 12 15 V GS , Gate-to-Source Voltage (V) Fig. 7 Typical On-Resistance Vs. Gate Voltage 4 A E AS , Single Pulse Avalanche Energy (mJ) 100 0.16 I D 0.89A 1.6A BOTTOM 2.0A TOP 80 60 40 20 A 0 25 50 75 100 125 150 Starting TJ , Junction Temperature (C) Fig 8. Maximum Avalanche Energy Vs. Drain Current 2015-10-5 AUIRF9952Q N-Channel 20 350 250 Ciss Coss 200 150 Crss 100 50 0 1 10 100 ID = 1.8A VDS = 10V 16 12 8 4 0 0 2 4 6 8 10 QG, Total Gate Charge (nC) A VDS , Drain-to-Source Voltage (V) Fig 9. Typical Capacitance Vs. Drain-to-Source Voltage Fig 10. Typical Gate Charge Vs. Gate-to-Source Voltage 100 Thermal Response (Z thJA ) C, Capacitance (pF) 300 VGS , Gate-to-Source Voltage (V) V GS = 0V, f = 1MHz C iss = Cgs + C gd , Cds SHORTED C rss = C gd C oss = C ds + C gd 0.50 0.20 10 0.10 0.05 0.02 1 PDM 0.01 t1 t2 SINGLE PULSE (THERMAL RESPONSE) 0.1 0.00001 0.0001 0.001 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x ZthJA + TA 0.01 0.1 1 10 100 t1, Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 5 2015-10-5 AUIRF9952Q P-Channel 100 100 VGS - 15V - 10V - 7.0V - 5.5V - 4.5V - 4.0V - 3.5V BOTTOM - 3.0V VGS - 15V - 10V - 7.0V - 5.5V - 4.5V - 4.0V - 3.5V BOTTOM - 3.0V TOP -I D , Drain-to-Source Current (A) -I D , Drain-to-Source Current (A) TOP 10 1 -3.0V 20s PULSE WIDTH TJ = 25C A 0.1 0.1 1 10 1 -3.0V 20s PULSE WIDTH TJ = 150C A 0.1 10 0.1 -VDS , Drain-to-Source Voltage (V) 100 -ISD , Reverse Drain Current (A) 100 -ID , Drain-to-Source Current (A) 10 Fig. 13 Typical Output Characteristics Fig. 12 Typical Output Characteristics 10 TJ = 25C T J = 150C 1 VDS = -10V 20s PULSE WIDTH 0.1 3.0 4.0 5.0 6.0 7.0 -VGS , Gate-to-Source Voltage (V) Fig. 14 Typical Transfer Characteristics 6 1 -VDS , Drain-to-Source Voltage (V) 8.0 10 TJ = 150C TJ = 25C 1 VGS = 0V 0.1 A 0.4 0.6 0.8 1.0 1.2 A 1.4 -VSD , Source-to-Drain Voltage (V) Fig. 15 Typical Source-Drain Diode Forward Voltage 2015-10-5 AUIRF9952Q P-Channel ID = -1.0A RDS(on) , Drain-to-Source On Resistance ( ) RDS(on) , Drain-to-Source On Resistance (Normalized) 2.0 1.5 1.0 0.5 0.0 -60 -40 -20 VGS = -10V 0 20 40 60 80 100 120 140 160 TJ, Junction Temperature ( C) 2.5 2.0 1.5 VGS = -4.5V 1.0 0.5 VGS = -10V 0.0 0.0 1.0 2.0 3.0 4.0 5.0 A -I D , Drain Current (A) Fig 16. Normalized On-Resistance Vs. Temperature Fig 17. Typical On-Resistance Vs. Drain Current 150 EAS , Single Pulse Avalanche Energy (mJ) RDS(on) , Drain-to-Source On Resistance ( ) 0.80 0.60 0.40 I D = -2.3A 0.20 0.00 0 3 6 9 12 15 A ID -0.58A -1.0A BOTTOM -1.3A TOP 120 90 60 30 0 25 50 75 100 125 Starting T J, Junction Temperature 150 ( C) -V GS , Gate-to-Source Voltage (V) Fig. 18 Typical On-Resistance Vs. Gate Voltage 7 Fig 19. Maximum Avalanche Energy Vs. Drain Current 2015-10-5 P-Channel 20 -VGS , Gate-to-Source Voltage (V) V GS = 0V, f = 1MHz C iss = Cgs + C gd , Cds SHORTED C rss = C gd C oss = Cds + C gd 300 Ciss Coss 200 Crss 100 0 1 10 100 ID = -2.3A VDS =-10V 16 12 8 4 0 0 2 4 6 8 10 QG, Total Gate Charge (nC) A -VDS , Drain-to-Source Voltage (V) Fig 21. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 20. Typical Capacitance Vs. Drain-to-Source Voltage 100 Thermal Response (Z thJA ) C, Capacitance (pF) 400 AUIRF9952Q 0.50 0.20 10 0.10 0.05 0.02 1 PDM 0.01 t1 t2 SINGLE PULSE (THERMAL RESPONSE) 0.1 0.00001 0.0001 0.001 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x ZthJA + TA 0.01 0.1 1 10 100 t1, Rectangular Pulse Duration (sec) Fig 22. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 8 2015-10-5 AUIRF9952Q SO-8 Package Outline (Dimensions are shown in millimeters (inches) D 8 6 7 6 M AX M IN A .0532 .0688 1.35 1.75 A1 .0040 .0098 0.10 0.25 b .013 .020 0.33 0.51 c .0075 .0098 0.19 0.25 D .189 .1968 4.80 5.00 E .1497 .1574 3.80 4.00 e .050 B ASIC 1.27 B ASIC e1 5 H E 1 6X 2 3 0.25 [ .010] 4 A e e1 A1 0.25 [ .010] C A M AX .025 B ASIC 0.635 BASIC H .2284 .2440 5.80 6.20 K .0099 .0196 0.25 0.50 L .016 .050 0.40 1.27 y 0 8 0 8 K x 45 A C 8X b M ILLIM ETERS M IN 5 A IN C H ES D IM B y 0.10 [ .004] B 8X L F O O T P R IN T N O TE S : 1. D IM E N S IO N IN G & T O L E R A N C IN G P E R A S M E Y 1 4 . 5 M - 1 9 9 4 . 2. C O N T R O L L IN G D IM E N S IO N : M IL L IM E T E R 3. D IM E N S IO N S A R E S H O W N IN M IL L IM E T E R S [ IN C H E S ] . 4. O U T L IN E C O N F O R M S T O J E D E C O U T L IN E M S - 0 1 2 A A . 5 D IM E N S IO N D O E S N O T IN C L U D E M O L D P R O T R U S IO N S . M O L D P R O T R U S IO N S N O T T O E X C E E D 0 .1 5 [ . 0 0 6 ] . 6 D IM E N S IO N D O E S N O T IN C L U D E M O L D P R O T R U S IO N S . M O L D P R O T R U S IO N S N O T T O E X C E E D 0 .2 5 [ . 0 1 0 ] . 7 D IM E N S IO N IS T H E L E N G T H O F L E A D F O R S O L D E R IN G T O A S U B S TR A TE . 8X c 7 8 X 0 .7 2 [ .0 2 8 ] 6 .4 6 [ .2 5 5 ] 3 X 1 .2 7 [ .0 5 0 ] 8 X 1 .7 8 [ .0 7 0 ] SO-8 Part Marking Information Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 9 2015-10-5 AUIRF9952Q SO-8 Tape and Reel (Dimensions are shown in millimeters (inches) TERMINAL NUMBER 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) FEED DIRECTION NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 330.00 (12.992) MAX. 14.40 ( .566 ) 12.40 ( .488 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 10 2015-10-5 AUIRF9952Q Qualification Information Qualification Level Moisture Sensitivity Level Machine Model Human Body Model ESD Charged Device Model RoHS Compliant Automotive (per AEC-Q101) Comments: This part number(s) passed Automotive qualification. Infineon's Industrial and Consumer qualification level is granted by extension of the higher Automotive level. SO-8 MSL1 N Ch: Class M1A (+/- 50V) P Ch: Class M1A (+/- 50V) AEC-Q101-002 N Ch: Class H0 (+/- 150V) P Ch: Class H0 (+/- 150V) AEC-Q101-001 N Ch: Class C4 (+/- 1000V) P Ch: Class C4 (+/- 1000V) AEC-Q101-005 Yes Highest passing voltage. Revision History Date 3/5/2014 10/5/2015 Comments Added "Logic Level Gate Drive" bullet in the features section on page 1 Updated data sheet with new IR corporate template Updated datasheet with corporate template Corrected ordering table on page 1. 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Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies' products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. 11 2015-10-5 Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: International Rectifier: AUIRF9952QTR