AUIRF9952Q
N-CH P-CH
VDSS 30V -30V
RDS(on) max. 0.10 0.25
ID 3.5A -2.3A
Description
Specifically designed for Automotive applications, this cellular design of
HEXFET® Power MOSFETs utilizes the latest processing techniques to
achieve low on-resistance per silicon area. This benefit combined with
the fast switching speed and ruggedized device design that HEXFET
power MOSFETs are well known for, provides the designer with an
extremely efficient and reliable device for use in Automotive and a wide
variety of other applications.
Features
Advanced Planar Technology
Low On-Resistance
Logic Level Gate Drive
Dual N and P Channel MOSFET
Dynamic dv/dt Rating
150°C Operating Temperature
Fast Switching
Full Avalanche Rated
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
1 2015-10-5
HEXFET® is a registered trademark of Infineon.
*Qualification standards can be found at www.infineon.com
AUTOMOTIVE GRADE
Symbol Parameter Max. Units
N-Channel P-Channel
ID @ TA = 25°C 10 Sec. Pulsed Drain Current, VGS @ 10V 3.5 -2.3
A
ID @ TA = 70°C Continuous Drain Current, VGS @ 10V 2.8 -1.8
IDM Pulsed Drain Current 16
-10
PD @TA = 25°C Maximum Power Dissipation 2.0 W
PD @TA = 70°C Maximum Power Dissipation 1.3
Linear Derating Factor 0.016 W/°C
VGS Gate-to-Source Voltage ± 20 V
EAS Single Pulse Avalanche Energy (Thermally Limited) 44 57 mJ
IAR Avalanche Current 2.0
-1.3 A
EAR Repetitive Avalanche Energy mJ
dv/dt Peak Diode Recovery dv/dt 5.0
-5.0 V/ns
TJ Operating Junction and -55 to + 150 °C
TSTG Storage Temperature Range
0.25
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance
and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless
otherwise specified.
Thermal Resistance
Symbol Parameter Typ. Max. Units
°C/W
RJA Junction-to-Ambient ( PCB Mount, steady state) ––– 62.5
SO-8
AUIRF9952Q
Base part number Package Type Standard Pack Orderable Part Number
Form Quantity
AUIRF952Q SO-8 Tape and Reel 4000 AUIRF9952QTR
G D S
Gate Drain Source
D1
D1
D2
D2
G1
S2
G2
S1
Top View
8
1
2
3
45
6
7
P-CHANNEL MOSFET
N-CHANNEL MOSFET
AUIRF9952Q
2 2015-10-5
Static @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage N-Ch 30 ––– ––– V VGS = 0V, ID = 250µA
P-Ch -30 ––– ––– VGS = 0V, ID = -250µA
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient N-Ch ––– 0.015 ––– V/°C Reference to 25°C, ID = 1mA
P-Ch ––– -0.015 ––– Reference to 25°C, ID = -1mA
RDS(on) Static Drain-to-Source On-Resistance
N-Ch ––– 0.08 0.10
VGS = 10V, ID = 2.2A
––– 0.12 0.15 VGS = 4.5V, ID = 1.0A
P-Ch ––– 0.165 0.250 VGS = -10V, ID = -1.0A
––– 0.290 0.400 VGS = -4.5V, ID = -0.5A
VGS(th) Gate Threshold Voltage N-Ch 1.0 ––– 3.0 V VDS = VGS, ID = 250µA
P-Ch -1.0 ––– -3.0 VDS = VGS, ID = -250µA
gfs Forward Trans conductance N-Ch ––– 12 ––– S VDS = 15V, ID = 3.5A
P-Ch ––– 2.4 ––– VDS = -15V, ID = -2.3A
IDSS Drain-to-Source Leakage Current
N-Ch ––– ––– 2.0
µA
VDS =24V, VGS = 0V
P-Ch ––– ––– -2.0 VDS = -24V,VGS = 0V
N-Ch ––– ––– 25 VDS =24V, VGS = 0V ,TJ = 125°C
P-Ch ––– ––– -25 VDS = -24V,VGS = 0V,TJ = 125°C
IGSS Gate-to-Source Forward Leakage N-P ––– ––– ± 100 nA VGS = ± 20V
Gate-to-Source Reverse Leakage N-P ––– ––– ± 100 VGS = ± 20V
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Qg Total Gate Charge N-Ch ––– 6.9 14
nC
N-Channel
P-Ch ––– 6.1 12 ID = 1.8A, VDS = 10V,VGS = 10V
Qgs Gate-to-Source Charge N-Ch ––– 1.0 2.0
P-Ch ––– 1.7 3.4 P-Channel
Qgd Gate-to-Drain Charge N-Ch ––– 1.8 3.5 ID = -2.3A,VDS = -10V,VGS = -10V
P-Ch ––– 1.1 2.2
td(on) Turn-On Delay Time N-Ch ––– 6.2 12
ns
N-Channel
P-Ch ––– 9.7 19 VDD = 10V,ID = 1.0A,RG = 6.0
tr Rise Time N-Ch ––– 8.8 18 RD = 10
P-Ch ––– 14 28
td(off) Turn-Off Delay Time N-Ch ––– 13 26 P-Channel
P-Ch ––– 20 40 VDD = -10V,ID = -1.0A,RG = 6.0
tf Fall Time N-Ch ––– 3.0 6.0 RD = 10
P-Ch ––– 6.9 14
Ciss Input Capacitance N-Ch ––– 190 –––
pF
N-Channel
P-Ch ––– 190 ––– VGS = 0V,VDS = 15V,ƒ = 1.0MHz
Coss Output Capacitance N-Ch ––– 120 –––
P-Ch ––– 110 ––– P-Channel
Crss Reverse Transfer Capacitance N-Ch ––– 61 ––– VGS = 0V,VDS = -15V,ƒ = 1.0MHz
P-Ch ––– 54 –––
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
IS Continuous Source Current (Body Diode) N-Ch ––– ––– 1.7
A
P-Ch ––– ––– -1.3
ISM Pulsed Source Current N-Ch ––– ––– 16
(Body Diode) P-Ch ––– ––– -16
VSD Diode Forward Voltage N-Ch ––– 0.82 1.2 V TJ = 25°C,IS = 1.25A,VGS = 0V
P-Ch ––– -0.82 -1.2 TJ = 25°C,IS = -1.25A,VGS = 0V
trr Reverse Recovery Time N-Ch ––– 27 53 ns N-Channel
P-Ch ––– 27 54 TJ = 25°C ,IF = 1.25A, di/dt = 100A/µs
Qrr Reverse Recovery Charge N-Ch ––– 28 57 nC P-Channel
P-Ch ––– 31 62 TJ = 25°C,IF = -1.25A, di/dt = 100A/µs
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by max. junction temperature. (See fig.23)
N-Channel ISD 2.0A, di/dt 100A/µs, VDD V(BR)DSS, TJ 150°C.
P-Channel ISD -1.3A, di/dt 84A/µs, VDD V(BR)DSS, TJ 150°C.
N‐ChannelStarting TJ = 25°C, L = 22mH RG = 25, IAS = 2.0A.(See Figure 12)
P‐ChannelStarting TJ = 25°C, L = 67mH RG = 25, IAS = -1.3A.
Pulse width 300µs; duty cycle 2%.
Surface mounted on FR-4 board , t 10sec.
AUIRF9952Q
3 2015-10-5
Fig. 2 Typical Output Characteristics
Fig. 3 Typical Transfer Characteristics Fig. 4 Typical Source-Drain Diode
Forward Voltage
Fig. 1 Typical Output Characteristics
N-Channel
1
10
100
0.1 1 10
20µs PULSE WIDTH
T = 25°C
A
J
DS
V , Drain-to-Source Voltage (V)
3.0V
VGS
TOP 15V
10V
7.0V
5.5V
4.5V
4.0V
3.5V
BOTTOM 3.0V
D
I , Drain-to-Source Current (A)
1
10
100
0.1 1 10
A
DS
V , Drain-to-Source Voltage (V)
D
I , Drain-to-Source Current (A)
20µs PULSE WIDTH
T = 150°C
J
3.0V
VGS
TOP 15V
10V
7.0V
5.5V
4.5V
4.0V
3.5V
BOTTOM 3.0V
1
10
100
3.0 3.5 4.0 4.5 5.0 5.5 6.0
T = 25°C
T = 150°C
J
J
GS
V , Gate-to-Source Voltage (V)
D
I , Drain-to-Source Current (A)
A
V = 10V
20µs PULSE WIDTH
DS
0.1
1
10
100
0.4 0.6 0.8 1.0 1.2 1.4
T = 25°C
T = 150°C
J
J
V = 0V
GS
V , Source-to-Drain Voltage (V)
I , Reverse Drain Current (A)
SD
SD
A
AUIRF9952Q
4 2015-10-5
Fig 5. Normalized On-Resistance
Vs. Temperature
Fig 6. Typical On-Resistance Vs. Drain
Current
Fig. 7 Typical On-Resistance Vs. Gate Voltage
N-Channel
-60 -40 -20 020 40 60 80 100 120 140 160
0.0
0.5
1.0
1.5
2.0
T , Junction Temperature ( C)
R , Drain-to-Source On Resistance
(Normalized)
J
DS(on)
°
V =
I =
GS
D
10V
2.2A
0.04
0.06
0.08
0.10
0.12
024681012
A
I , Drain Current (A)
D
V = 10V
GS
V = 4.5V
GS
RDS (on) , Drain-to-Source On Resistance ()
0.00
0.02
0.04
0.06
0.08
0.10
0.12
0.14
0.16
03691215
A
I = 3.5A
D
GS
V , Gate-to-Source Voltage (V)
RDS (on) , Drain-to-Source On Resistance ()
0
20
40
60
80
100
25 50 75 100 125 150
J
E , Single Pulse Avalanche Energy (mJ)
AS
A
Starting T , Junction Temperature (°C)
I
TOP 0.89A
1.6A
BOTTOM 2.0A
D
Fig 8. Maximum Avalanche Energy
Vs. Drain Current
AUIRF9952Q
5 2015-10-5
Fig 9. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 10. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
N-Channel
0
50
100
150
200
250
300
350
110100
C, Capacitance (pF)
DS
V , Drain-to-Source Voltage (V)
A
V = 0V, f = 1MHz
C = C + C , C SHORTED
C = C
C = C + C
GS
iss gs gd ds
rss gd
oss ds gd
C
iss
C
oss
C
rss
0 2 4 6 8 10
0
4
8
12
16
20
Q , Total Gate Charge (nC)
V , Gate-to-Source Voltage (V)
G
GS
I =
D
1.8A
V = 10V
DS
0.1
1
10
100
0.00001 0.0001 0.001 0.01 0.1 1 10 100
Not es:
1. Duty factor D = t / t
2. Peak T = P x Z + T
1 2
JDM thJA A
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Thermal Response (Z )
1
thJA
0.01
0.02
0.05
0.10
0.20
0.50
SINGLE PULSE
(THERMAL RESPONSE)
AUIRF9952Q
6 2015-10-5
P-Channel
Fig. 13 Typical Output Characteristics
Fig. 14 Typical Transfer Characteristics Fig. 15 Typical Source-Drain Diode
Forward Voltage
Fig. 12 Typical Output Characteristics
0.1
1
10
100
0.1 1 10
D
DS
20µs PULSE WIDTH
T = 25°C
A
-I , Drain-to-Source Current (A)
-V , Drain-to-Source Voltage (V)
J
-3.0V
VGS
TOP - 15V
- 10V
- 7.0V
- 5.5V
- 4.5V
- 4.0V
- 3.5V
BOTTOM - 3.0V
0.1
1
10
100
0.1 1 10
D
DS
A
-I , Drain-to-Source Current (A)
-V , Drain-to-Source Voltage (V)
-3.0V
VGS
TOP - 15V
- 10V
- 7.0V
- 5.5V
- 4.5V
- 4.0V
- 3.5V
BOTTOM - 3.0V
20µs PULSE WIDTH
T = 150°C
J
0.1
1
10
100
3.0 4.0 5.0 6.0 7.0 8.0
T = 25°C
T = 150°C
J
J
GS
D
A
-I , Drain-to-Source Current (A)
-V , Gate-to-Source Voltage (V)
V = -10V
20µs PULSE WIDTH
DS
0.1
1
10
100
0.4 0.6 0.8 1.0 1.2 1.4
T = 25°C
T = 150°C
J
J
V = 0V
GS
SD
SD
A
-I , Reverse Drain Current (A)
-V , Source-to-Drain Voltage (V)
AUIRF9952Q
7 2015-10-5
Fig 16. Normalized On-Resistance
Vs. Temperature
Fig 17. Typical On-Resistance Vs.
Drain Current
Fig. 18 Typical On-Resistance Vs. Gate Voltage
P-Channel
Fig 19. Maximum Avalanche Energy
Vs. Drain Current
-60 -40 -20 020 40 60 80 100 120 140 160
0.0
0.5
1.0
1.5
2.0
T , Junction Temperature ( C)
R , Drain-to-Source On Resistance
(Normalized)
J
DS(on)
°
V =
I =
GS
D
-10V
-1.0A
0.0
0.5
1.0
1.5
2.0
2.5
0.0 1.0 2.0 3.0 4.0 5.0
A
-I , Drain Current (A)
D
V = -10V
V = -4.5V
GS
GS
RDS(on) , Drain-to-Source On Resistance ( )
0.00
0.20
0.40
0.60
0.80
0 3 6 9 12 15
A
GS
I = -2.3A
D
-V , Gate-to-Source Voltage (V)
RDS(on) , Drain-to-Source On Resistance ( )
25 50 75 100 125 150
0
30
60
90
120
150
Starting T , Junction Temperature ( C)
E , Single Pulse Avalanche Energy (mJ)
J
AS
°
ID
TOP
BOTTOM
-0.58A
-1.0A
-1.3A
AUIRF9952Q
8 2015-10-5
P-Channel
Fig 20. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 21. Typical Gate Charge Vs.
Gate-to-Source Voltage
0
100
200
300
400
110100
C, Capacitance (pF)
A
DS
-V , Drain-to-Source Voltage (V)
V = 0V, f = 1MHz
C = C + C , C SHORTED
C = C
C = C + C
GS
iss gs gd ds
rss gd
oss ds gd
C
iss
C
oss
C
rss
0246810
0
4
8
12
16
20
Q , Total Gate Char ge ( nC)
-V , Gate-to-Source Voltage (V)
G
GS
I =
D
-2.3A
V =-10V
DS
0.1
1
10
100
0.00001 0.0001 0.001 0.01 0.1 1 10 100
Notes:
1. Duty factor D = t / t
2. Peak T = P x Z + T
1 2
JDM thJA A
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Thermal Response (Z )
1
thJA
0.01
0.02
0.05
0.10
0.20
0.50
SINGLE PULSE
(THERMAL RESPONSE)
Fig 22. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
AUIRF9952Q
9 2015-10-5
SO-8 Part Marking Information
SO-8 Package Outline (Dimensions are shown in millimeters (inches)
e1
D
E
y
b
A
A1
H
K
L
.189
.1497
0°
.013
.050 BASIC
.0532
.0040
.2284
.0099
.016
.1968
.1574
8°
.020
.0688
.0098
.2440
.0196
.050
4.80
3.80
0.33
1.35
0.10
5.80
0.25
0.40
0°
1.27 BASIC
5.00
4.00
0.51
1.75
0.25
6.20
0.50
1.27
MIN MAX
MILLIMETERSIN C H ES
MIN MAX
DIM
8°
e
c .0075 .0098 0.19 0.25
.025 BASIC 0.635 BASIC
87
5
65
D B
E
A
e
6X
H
0.25 [.010] A
6
7
K x 45°
8X L 8X c
y
0.25 [.010] C AB
e1
A
A1
8X b
C
0.10 [.004]
4312
FOOTPRINT
8X 0.72 [.028]
6.46 [.255]
3X 1.27 [.050]
4. OUTLINE CONFORMS TO JEDEC OUTLINE MS-012AA.
N O TES:
1. D IM EN SIO N IN G & TO LERAN C IN G PER ASM E Y14.5M -1994.
2. CONTROLLING DIM ENSION: MILLIMETER
3. DIMENSIONS ARE SHOWN IN M ILLIM ETERS [INCHES].
5 DIM EN SIO N D O ES N O T IN C LU D E M O LD PRO TRU SIO N S.
6 DIM EN SIO N D O ES N O T IN C LU D E M O LD PRO TRU SIO N S.
M O LD PRO TRU SIO N S N O T TO EXC EED 0.25 [.010].
7 D IM EN SIO N IS TH E LEN G TH O F LEA D FO R SO LD ER IN G TO
A S U B S T R A T E .
M O LD PRO TRU SIO N S N O T TO EXC EED 0.15 [.006].
8X 1.78 [.070]
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
AUIRF9952Q
10 2015-10-5
SO-8 Tape and Reel (Dimensions are shown in millimeters (inches)
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
FEED DIRECTION
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
AUIRF9952Q
11 2015-10-5
Qualification Information
Qualification Level
Automotive
(per AEC-Q101)
Comments: This part number(s) passed Automotive qualification. Infineon’s
Industrial and Consumer qualification level is granted by extension of the higher
Automotive level.
Moisture Sensitivity Level SO-8 MSL1
ESD
Machine Model
N Ch: Class M1A (+/- 50V)†
AEC-Q101-002
Human Body Model
N Ch: Class H0 (+/- 150V)†
AEC-Q101-001
Charged Device Model
N Ch: Class C4 (+/- 1000V)†
AEC-Q101-005
RoHS Compliant Yes
P Ch: Class M1A (+/- 50V)†
P Ch: Class H0 (+/- 150V)†
P Ch: Class C4 (+/- 1000V)†
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 2015
All Rights Reserved.
IMPORTANT NOTICE
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics
(“Beschaffenheitsgarantie”). With respect to any examples, hints or any typical values stated herein and/or any
information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and
liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third
party.
In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this
document and any applicable legal requirements, norms and standards concerning customer’s products and any use of
the product of Infineon Technologies in customer’s applications.
The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of
customer’s technical departments to evaluate the suitability of the product for the intended application and the
completeness of the product information given in this document with respect to such application.
For further information on the product, technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies office (www.infineon.com).
WARNINGS
Due to technical requirements products may contain dangerous substances. For information on the types in question
please contact your nearest Infineon Technologies office.
Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized
representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a
failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury.
Revision History
Date Comments
10/5/2015 Updated datasheet with corporate template
Corrected ordering table on page 1.
3/5/2014 Added "Logic Level Gate Drive" bullet in the features section on page 1
Updated data sheet with new IR corporate template
† Highest passing voltage.
