SST/U401 Series Vishay Siliconix Monolithic N-Channel JFET Duals SST404 SST406 U401 U404 U406 PRODUCT SUMMARY VGS1 - VGS2 Max (mV) Part Number VGS(off) (V) V(BR)GSS Min (V) gfs Min (mS) IG Typ (pA) U401 -0.5 to -2.5 -40 1 -2 5 SST/U404 -0.5 to -2.5 -40 1 -2 15 SST/U406 -0.5 to -2.5 -40 1 -2 40 FEATURES BENEFITS APPLICATIONS D D D D D D D D D D D D D Wideband Differential Amps D High-Speed,Temp-Compensated, Single-Ended Input Amps D High-Speed Comparators D Impedance Converters Monolithic Design High Slew Rate Low Offset/Drift Voltage Low Gate Leakage: 2 pA Low Noise High CMRR: 102 dB Tight Differential Match vs. Current Improved Op Amp Speed, Settling Time Accuracy Minimum Input Error/Trimming Requirement Insignificant Signal Loss/Error Voltage High System Sensitivity Minimum Error with Large Input Signal DESCRIPTION The SST/U401 series of high-performance monolithic dual JFETs features extremely low noise, tight offset voltage and low drift over temperature specifications, and is targeted for use in a wide range of precision instrumentation applications. This series has a wide selection of offset and drift specifications with the U401 featuring a 5-mV offset and 10-mV/_C drift. The U series, hermetically sealed TO-71 package is available with full military processing (see Military Information). The SST series SO-8 package provides ease of manufacturing, and the symmetrical pinout prevents improper orientation. The SO-8 package is available with tape-and-reel options for compatibility with automatic assembly methods (see Packaging Information). For similar high-gain products in TO-78 packaging, see the 2N5911/5912 data sheet. TO-71 Narrow Body SOIC S1 S1 1 8 NC D1 2 7 G2 G1 3 6 D2 NC 4 5 S2 G2 1 D1 6 2 3 4 G1 Top View SST404, SST406 D2 5 S2 Top View U401, U404, U406 ABSOLUTE MAXIMUM RATINGS Gate-Drain, Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -40 V Operating Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to 150_C Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 mA Power Dissipation : Lead Temperature (1/16" from case for 10 sec.) . . . . . . . . . . . . . . . . . . . 300_C Storage Temperature : U Prefix . . . . . . . . . . . . . . . . . . . . . -65 to 200_C SST Prefix . . . . . . . . . . . . . . . . . . . -55 to 150_C Per Sidea . . . . . . . . . . . . . . . . . . . . . . . . 300 mW Totalb . . . . . . . . . . . . . . . . . . . . . . . . . . . 500 mW Notes a. Derate 2.4 mW/_C above 25_C b. Derate 4 mW/_C above 25_C For applications information see AN106. Document Number: 70247 S-04031--Rev. F, 04-Jun-01 www.vishay.com 8-1 SST/U401 Series Vishay Siliconix SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED) Limits U401 Parameter Symbol Typa Test Conditions Min SST/U404 Max Min Max SST/U406 Min Max Unit Static V(BR)GSS IG = -1 mA, VDS = 0 V -58 -40 -40 -40 V(BR)G1 - G2 IG = "1 mA, VDS = 0 V, VGS = 0 V "45 "30 "30 "30 Gate-Source Cutoff Voltage VGS(off) VDS = 15 V, ID = 1 nA -1.5 -0.5 -2.5 -0.5 -2.5 -0.5 -2.5 Saturation Drain Currentb IDSS VDS = 10 V, VGS = 0 V 3.5 0.5 10 0.5 10 0.5 10 mA pA IGSS VGS = -30 V, VDS = 0 V -2 Gate Reverse Current Gate-Source Breakdown Voltage TA = 125_C VDG = 15 V, ID = 200 mA -25 -25 -25 -2 -15 -15 -15 pA -0.8 -10 -10 -10 nA -1 Gate Operating Current IG Drain-Source On-Resistance rDS(on) VGS = 0 V, ID = 0.1 mA 250 VGS VDG = 15 V, ID = 200 mA -1 VGS(F) IG = 1 mA , VDS = 0 V 0.7 Gate-Source Voltage Gate-Source Forward Voltage TA = 125_C V nA W -2.3 -2.3 -2.3 V Dynamic Common-Source Forward Transconductance gfs Common-Source Output Conductance gos Common-Source Forward Transconductance gfs Common-Source Output Conductance gos Common-Source Input Capacitance Ciss Common-Source Reverse Transfer Capacitance Crss Equivalent Input Noise Voltage en 1.5 VDS = 15 V, ID = 200 mA f = 1 kHz 1 1.3 4 2 1 2 2 7 2 1 2 2 7 2 2 mS 2 mS 7 mS mS VDS = 10 V, VGS = 0 V f = 1 kHz VDS = 15 V, ID = 200 mA m f = 1 MHz 5 30 30 30 4 8 8 8 1.5 3 3 3 10 20 20 20 nV Hz 5 15 40 mV 10 25 80 pF VDS = 15 V, ID = 200 mA f = 10 Hz Matching Differential Gate-Source Voltage |V GS1 - V GS2| Gate-Source Voltage Differential Change with Temperature D|V GS1 - V GS2| Common Mode Rejection Ratio D DT CMRR VDG = 10 V, ID = 200 mA VDG = 10 V ID = 200 mA m TA = -55 to 125_C _ SST404 20 SST406 40 VDG = 10 to 20 V, ID = 200 mA Notes a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. b. Pulse test: PW v300 ms duty cycle v3%. www.vishay.com 8-2 mV/_C m All U 102 95 95 dB NNR Document Number: 70247 S-04031--Rev. F, 04-Jun-01 SST/U401 Series Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) Drain Current and Transconductance vs. Gate-Source Cutoff Voltage Gate Leakage Current 100 nA 8.0 8 6 6.4 4.8 gfs 4 3.2 IDSS 2 1.6 0 10 nA IG - Gate Leakage IDSS @ VDS = 15 V, VGS = 0 V gfs @ VDG = 15 V, VGS = 0 V f = 1 kHz gfs - Forward Transconductance (mS) IDSS - Saturation Drain Current (mA) 10 -0.5 -1.0 -1.5 -2.0 TA = 125_C 1 nA IGSS @ 125_C 100 pA 50 mA 50 mA TA = 25_C 10 pA 1 pA 0 0 IG @ ID = 500 mA IGSS @ 25_C 0.1 pA 0 -2.5 10 VGS(off) - Gate-Source Cutoff Voltage (V) 20 30 50 40 VDG - Drain-Gate Voltage (V) Output Characteristics Output Characteristics 4 7 VGS(off) = -1.5 V VGS(off) = -2 V VGS = 0 V VGS = 0 V 6 -0.2 V ID - Drain Current (mA) ID - Drain Current (mA) 3.2 2.4 -0.4 V 1.6 -0.6 V -1.2 V -0.2 V 5 -0.4 V 4 -0.6 V 3 -0.8 V 2 -1.0 V -0.8 V 0.8 -1.2 V 1 -1.0 V 0 0 0 4 8 12 16 20 0 VDS - Drain-Source Voltage (V) 4 8 16 20 VDS - Drain-Source Voltage (V) Output Characteristics Output Characteristics 3 4 VGS = 0 V VGS(off) = -1.5 V VGS = 0 V VGS(off) = -2 V 2.4 -0.2 V 3.2 -0.2 V ID - Drain Current (mA) ID - Drain Current (mA) 12 1.8 -0.4 V 1.2 -0.6 V -1.2 V 0.6 -0.8 V -0.4 V -0.6 V 2.4 -0.8 V 1.6 -1.0 V -1.2 V 0.8 -1.4 V -1.0 V 0 0 0 0.2 0.4 0.6 VDS - Drain-Source Voltage (V) Document Number: 70247 S-04031--Rev. F, 04-Jun-01 0.8 1 0 0.2 0.4 0.6 0.8 1 VDS - Drain-Source Voltage (V) www.vishay.com 8-3 SST/U401 Series Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) Gate-Source Differential Voltage vs. Drain Current Transfer Characteristics 100 5 VGS(off) = -1.5V VDG = 15 V TA = -55_C (mV) ID - Drain Current (mA) 4 VDS = 15 V 25_C 3 VGS1 - VGS2 SST/U404 2 10 U401 125_C 1 0 1 0 -0.4 -0.8 -1.2 -1.6 VGS - Gate-Source Voltage (V) 0.01 -2 Voltage Differential with Temperature vs. Drain Current 130 DVDG CMRR = 20 log D V GS1 - VGS2 120 CMRR (dB) SST/U404 Dt U401 110 DVDG = 10 - 20 V 100 5 - 10 V 90 D VGS1 - VGS2 ( m V/ _C ) VDG = 15 V DTA = 25 to 125_C DTA = -55 to 25_C 10 80 1 0.01 0.1 ID - Drain Current (mA) 1 0.01 Circuit Voltage Gain vs. Drain Current 0.1 ID - Drain Current (mA) 1 On-Resistance vs. Drain Current 150 rDS(on) - Drain-Source On-Resistance ( ) 500 120 VGS(off) = -1.5 V A V - Voltage Gain 1 Common Mode Rejection Ratio vs. Drain Current 100 -2.0 V 90 60 g fs R L AV + 1 ) R g L os Assume VDD = 15 V, VDS = 5 V 30 10 V RL + I D 0 0.01 www.vishay.com 8-4 0.1 ID - Drain Current (mA) 0.1 ID - Drain Current (mA) 1 400 VGS(off) = -1.0 V 300 200 -1.5 V -2.0 V 100 0 0.01 0.1 ID - Drain Current (mA) 1 Document Number: 70247 S-04031--Rev. F, 04-Jun-01 SST/U401 Series Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) Common-Source Input Capacitance vs. Gate-Source Voltage Common-Source Reverse Feedback Capacitance vs. Gate-Source Voltage 10 10 C rss - Reverse Feedback Capacitance (pF) C iss - Input Capacitance (pF) f = 1 MHz 8 6 VDS = 0 V 5V 4 2 15 V 0 f = 1 MHz 8 6 VDS = 0 V 4 5V 2 15 V 0 0 -4 -8 -12 -16 VGS - Gate-Source Voltage (V) -20 0 -20 20 VGS(off) = -1.5 V VDS = 15 V f = 1 kHz VDG = 15 V en - Noise Voltage nV / Hz 4 gos - Output Conductance (S) -8 -12 -16 VGS - Gate-Source Voltage (V) Equivalent Input Noise Voltage vs. Frequency Output Conductance vs. Drain Current 5 3 TA = -55_C 2 25_C 1 16 12 ID @ 200 mA 8 4 VGS = 0 V 125_C 0 0 0.01 0.1 ID - Drain Current (mA) 10 1 100 1k f - Frequency (Hz) 10 k 100 k On-Resistance and Output Conductance vs. Gate-Source Cutoff Voltage Common-Source Forward Transconductance vs. Drain Current 500 VGS(off) = -1.5 V VDS = 15 V f = 1 kHz 3.2 TA = -55_C 2.4 25_C 1.6 125_C 0.8 30 rDS 400 24 gos 300 18 rDS @ ID = 100 mA VGS = 0 V gos @ VDG = 15 V VGS = 0 V f = 1 kHz 200 12 6 100 0 0 0 0.01 Document Number: 70247 S-04031--Rev. F, 04-Jun-01 0.1 ID - Drain Current (mA) 1 g os - Output Conductance ( mS) rDS(on) - Drain-Source On-Resistance ( ) 4.0 gfs - Forward Transconductance (mS) -4 0 -0.5 -1.0 -1.5 -2.0 VGS(off) - Gate-Source Cutoff Voltage (V) -2.5 www.vishay.com 8-5