VTB Process Photodiode VTB8440BH, 8441BH PACKAGE DIMENSIONS inch (mm) CASE 21F 8 mm CERAMIC CHIP ACTIVE AREA: .008 in2 (5.16 mm2) PRODUCT DESCRIPTION ABSOLUTE MAXIMUM RATINGS Planar silicon photodiode in recessed ceramic package. The package incorporates an infrared rejection filter. These diodes have very high shunt resistance and have good blue response. Storage Temperature: Operating Temperature: -20C to 75C -20C to 75C RoHS Compliant ELECTRO-OPTICAL CHARACTERISTICS @ 25C (See also VTB curves, pages 21-22) SYMBOL CHARACTERISTIC VTB8440BH TEST CONDITIONS Min. ISC TC ISC VOC TC VOC ID RSH TC RSH CJ Open Circuit Voltage H = 100 fc, 2850 K 420 420 mV VOC Temperature Coefficient 2850 K -2.0 -2.0 mV/C Dark Current H = 0, VR = 2.0 V Shunt Resistance H = 0, V = 10 mV .07 1.4 G RSH Temperature Coefficient H = 0, V = 10 mV -8.0 -8.0 %/C Junction Capacitance H = 0, V = 0 1.0 1.0 nF VBR Breakdown Voltage 1/2 Angular Resp. - 50% Resp. Pt. 4 UNITS Max. 2850 K Spectral Response - Peak D* Typ. H = 100 fc, 2850 K Spectral Application Range 5 Min. ISC Temperature Coefficient p NEP Max. Short Circuit Current range 4 Typ. VTB8441BH .02 5 .08 A .02 .08 2000 330 720 100 330 580 2 40 pA nm 580 nm 40 V 2 50 Degrees Noise Equivalent Power 1.1 x 10 -13 (Typ.) 2.4 x 10-14 (Typ.) Specific Detectivity 2.2 x 10 12 (Typ.) 9.7 x 10 12 (Typ.) W Hz cm Hz W PerkinElmer Optoelectronics, 22001 Dumberry, Vaudreuil, Canada J7V 8P7 50 720 %/C Phone: 877-734-6786 Fax: 450-424-3413 www.perkinelmer.com/opto