NTE2343 (NPN) & NTE2344 (PNP)
Silicon Complementary Transistors
Darlington Power Amp, Switch
Absolute Maximum Ratings:
Collector–Base Voltage, VCBO 120V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector–Emitter Voltage, VCEO 120V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Current, IC
DC 12A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Pulse 15A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Base Current, IB200mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Dissipation (TC = +25°C), PC80W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature, TJ+150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, Tstg –65° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Resistance, Junction–to–Case, RthJC 1.56°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Collector–Emitter Sustaining Voltage VCEO(sus) IC = 100mA, IB = 0, Note 1 100 – – V
Collector Cutoff Current ICBO VCB = 100V, IE = 0 – – 100 µA
ICEO VCE = 100V, IB = 0 – – 1 mA
Emitter Cutoff Current IEBO VEB = 5V, IC = 0 – – 2 mA
DC Current Gain hFE VCE = 3V, IC = 3A 1000 – –
VCE = 3V, IC = 5A 750 – 1000
VCE = 3V, IC = 10A 100 – –
Collector–Emitter Saturation Voltage VCE(sat) IC = 5A, IB = 20mA, Note 1 – – 2.0 V
IC = 10A, IB = 100mA, Note 1 – – 3.0 V
Base–Emitter Saturation Voltage VBE(sat) IC = 5A, IB = 20mA, Note 1 – – 2.5 V
IC = 10A, IB = 100mA, Note 1 – – 4.0 V
Parallel Diode Forward Voltage VfIf = 5A, Note 1 – 1.3 2.0 V
If = 10A, Note 1 – 1.8 4.0 V
Small–Signal Current Gain hfe IC = 1A, VCE = 10V, f = 1MHz 20 – –
Note 1. Pulse Test: Pulse Width = 300µs, Duty Cycle = 1.5%.
.250 (6.35)
Max
.500
(12.7)
Max
.500
(12.7)
Min
.110 (2.79)
.420 (10.67)
Max
.070 (1.78) Max
Base
.100 (2.54) Collector/Tab
Emitter
.147 (3.75)
Dia Max
NTE2343
(NPN) NTE2344
(PNP)
B
C
E
B
C
E
