Rev.2.00 Sep 07, 2005 page 1 of 6
2SK1947
Silicon N Channel MOS FET REJ03G0986-0200
(Previous : AD E-208- 1 334)
Rev.2.00
Sep 07, 2005
Application
High speed power swit ching
Features
• Low on-resistance
• High speed switching
• Low drive current
• Built-in fast recovery diode (trr = 140 ns)
• Suitable for switching regulator, motor control
Outline
RENESAS Package code: PRSS0004ZF-A
(Package name: TO-3PL)
1. Gate
2. Drain
(Flange)
3. Source
D
G
S
123
2SK1947
Rev.2.00 Sep 07, 2005 page 2 of 6
Absolute Maximum Ratings
(Ta = 25°C)
Item Symbol Ratings Unit
Drain to source voltage VDSS 250 V
Gate to source voltage VGSS ±30 V
Drain current ID 50 A
Drain peak current ID(pulse)*1 200 A
Body to drain diode reverse drain current IDR 50 A
Channel dissipation Pch*2 200 W
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1 %
2. Value at Tc = 25°C
Electrical Characteristics
(Ta = 25°C)
Item Symbol Min Typ Max Unit Test conditions
Drain to source breakdown voltage V(BR)DSS 250 — — V ID = 10 mA, VGS = 0
Gate to source breakdown voltage V(BR)GSS ±30 — — V IG = ±100 µA, VDS = 0
Gate to source leak current IGSS — — ±10 µA VGS = ±25 V, VDS = 0
Zero gate voltage drain current IDSS — — 250 µA VDS = 200 V, VGS = 0
Gate to source cutoff volta ge VGS(off) 2.0 — 3.0 V ID = 1 mA, VDS = 10 V
Static drain to source on state
resistance RDS(on) — 0.047 0.06 Ω I
D = 25 A, VGS = 10 V*3
Forward transfer admittance |yfs| 20 30 — S ID = 25 A, VDS = 10 V*3
Input capacitan ce Ciss — 5810 — pF
Output capacitance Coss — 2360 — pF
Reverse transfer capacitance Crss — 270 — pF
VDS = 10 V, VGS = 0,
f = 1 MHz
Turn-on delay time td(on) — 75 — ns
Rise time tr — 270 — ns
Turn-off delay time td(off) — 420 — ns
Fall time tf — 200 — ns
ID = 25 A, VGS = 10 V,
RL = 1.2 Ω
Body to drain diode forward voltage VDF — 1.2 — V IF = 50 A, VGS = 0
Body to drain diode reverse
recovery time trr — 140 — ns IF = 50 A, VGS = 0,
diF/dt = 100 A/µs
Note: 3. Pulse Test
2SK1947
Rev.2.00 Sep 07, 2005 page 3 of 6
Main Characteristics
Power vs. Temperature Derating
Channel Dissipation Pch (W)
Case Temperature TC (°C)
Maximum Safe Operation Area
Drain to Source Voltage VDS (V)
Drain Current ID (A)
Typical Output Characteristics
Drain Current ID (A)
Drain to Source Voltage VDS (V)
Typical Transfer Characteristics
Gate to Source Voltage VGS (V)
Drain Current ID (A)
Gate to Source Voltage VGS (V)
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
Drain to Source Saturation Voltage
VDS (on) (V)
Drain Current ID (A)
Static Drain to Source on State
Resistance vs. Drain Current
Static Drain to Source on State Resistance
RDS (on) (Ω)
300
200
100
50 100 150
0
1 ms
PW = 10 ms (1 shot)
100 s
µ
10 s
µ
Operation in this
area is limited
by R (on)
DS
1000
300
100
30
10
3
1
1 3 10 30 100 300 1000
Ta = 25°C
0.3
0.1
DC Operation (Tc = 25 C)
100
80
60
40
20
GS
V = 3.5 V
5.5 V
4 8 12 16 20
0
4 V
5 V
6 V
8 V10 V
DS
V = 10 V
Pulse Test
Tc = 25°C
50
40
30
20
10
246810
–25°C
75°C
0
Pulse Test
0481216
20
5
4
3
2
1
I = 10 A
D
20 A
50 A V = 10 V
GS
5 10 20 50 100 200
0.2
0.1
0.05
0.02
0.01
0.005
0.5
2
Pulse Test
2SK1947
Rev.2.00 Sep 07, 2005 page 4 of 6
Case Temperature T
C
(°C)
Static Drain to Source on State
Resistance vs. Temperature
Static Drain to Source on State Resistance
R
DS (on)
(Ω)
Forward Transfer Admittance
vs. Drain Current
Drain Current I
D
(A)
Forward Transfer Admittance yfs (S)
Body to Drain Diode Reverse
Recovery Time
Reverse Drain Current I
DR
(A)
Reverse Recovery Time trr (ns)
Typical Capacitance
vs. Drain to Source Voltage
Drain to Source Voltage V
DS
(V)
Capacitance C (pF)
Dynamic Input Characteristics
Gate Charge Qg (nc)
Drain to Source Voltage V
DS
(V)
Gate to Source Voltage V
GS
(V)
Switching Characteristics
Switching Time t (ns)
Drain Current I
D
(A)
0.20
0.16
0.12
0.08
0.04
0
I = 50 A
D
–40 0 80 12040
Pulse Test
V = 10 V
160
GS
10 A, 20 A
Tc = 25°C
75°C
100
50
20
10
5
2
1
–25°C
Pulse Test
V = 10 V
DS
0.5 1 2 5 10 20 50
500
1 2 5 10 20 50 100
di/dt = 100 A/ s
V = 0, Ta = 25°C
GS
µ
200
100
50
20
10
5
10000
1000
100
10
Ciss
Coss
Crss
V = 0
f = 1 MHz
GS
01020304050
500
400
300
200
100
20
16
12
8
4
0
I = 50 A
D
V = 200 V
100 V
50 V
DD
80 160 240 320 400
V = 200 V
100 V
50 V
DD
V
DS
0
V
GS
tt
1000
500
200
100
50
20
10
0.5 1 2 5 10 20 50
fr
V
GS
= 10 V, V
DD
= 30 V
PW = 2 µs, duty ≤ 1 %
td(off)
td(on)
2SK1947
Rev.2.00 Sep 07, 2005 page 5 of 6
Reverse Drain Current vs.
Source to Drain Voltage
Source to Drain Voltage VSD (V)
Reverse Drain Current IDR (A)
Pulse Width PW (S)
Normalized Transient Thermal Impedance vs. Pulse Width
Normalized Transient Thermal Impedance γS (t)
Switching Time Test Circuit Waveforms
50
40
30
20
10
0.4 0.8 1.2 1.6 2.0
GS
Pulse Test
V = 10 V
0, –5 V
0
T
C
= 25°C
D = 1
0.5
0.2
0.1
0.05
0.02
0.01
1 Shot Pulse
TPW
P
DM
D = T
PW
θch–c (t) = γ
S
(t) · θch–c
θch–c = 0.625°C/W, T
C
= 25°C
3
1
0.1
0.3
10 µ
0.03
0.01
100 µ10 m 100 m 1 10
1 m
Vin Monitor
Vin
10 V 50 Ω
D.U.T.
Vout Monitor
R
L
V
DD
30 V
=
..
Vin
t
d
(on)
10%
t
r
90%
Vout 10%
90% 90%
t
f
t
d
(off)
10%
2SK1947
Rev.2.00 Sep 07, 2005 page 6 of 6
Package Dimensions
20.0 ± 0.3
φ3.3 ± 0.2
1.4
2.2
3.0
1.2
5.45 ± 0.5
5.45 ± 0.5
1.0
3.8
7.4
2.8 ± 0.2
0.6
5.0 ± 0.2
6.0 ± 0.2
26.0 ± 0.3
20.0 ± 0.6
2.5 ± 0.3
+0.25
–0.1
+0.25
–0.1
Package Name
PRSS0004ZF-A TO-3PL / TO-3PLV
MASS[Typ.]
9.9g
RENESAS CodeJEITA Package Code
Unit: mm
Ordering Information
Part Name Quantity Shipping Container
2SK1947-E 500 pcs Box (Case)
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of
production before ordering the product.
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