BYW72, BYW73, BYW74, BYW75, BYW76
www.vishay.com Vishay Semiconductors
Rev. 1.8, 21-Feb-18 1Document Number: 86050
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fast Avalanche Sinterglass Diode
DESIGN SUPPORT TOOLS
MECHANICAL DATA
Case: SOD-64
Terminals: plated axial leads, solderable per MIL-STD-750,
method 2026
Polarity: color band denotes cathode end
Mounting position: any
Weight: approx. 858 mg
FEATURES
• Glass passivated junction
• Hermetically sealed package
• Low reverse current
• Soft recovery characteristics
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
• Fast rectification and switching diode for TV-line output
circuits and switch mode power supply
949588
click logo to get started
Available
Models
ORDERING INFORMATION (Example)
DEVICE NAME ORDERING CODE TAPED UNITS MINIMUM ORDER QUANTITY
BYW72 or BYW73 BYW73-TR 2500 per 10" tape and reel 12 500
BYW72 or BYW73 BYW73-TAP 2500 per ammopack 12 500
BYW74 or BYW75 or BYW76 BYW76-TR 2500 per 10" tape and reel 12 500
BYW74 or BYW75 or BYW76 BYW76-TAP 2500 per ammopack 12 500
PARTS TABLE
PART TYPE DIFFERENTIATION PACKAGE
BYW72 VR = 200 V; IF(AV) = 3 A SOD-64
BYW73 VR = 300 V; IF(AV) = 3 A SOD-64
BYW74 VR = 400 V; IF(AV) = 3 A SOD-64
BYW75 VR = 500 V; IF(AV) = 3 A SOD-64
BYW76 VR = 600 V; IF(AV) = 3 A SOD-64
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION PART SYMBOL VALUE UNIT
Reverse voltage = repetitive peak
reverse voltage See electrical characteristics
BYW72 VR = VRRM 200 V
BYW73 VR = VRRM 300 V
BYW74 VR = VRRM 400 V
BYW75 VR = VRRM 500 V
BYW76 VR = VRRM 600 V
Peak forward surge current tp = 10 ms, half sine wave IFSM 100 A
Repetitive peak forward current IFRM 15 A
Average forward current IF(AV) 3A
Non repetitive reverse avalanche energy I(BR)R = 0.4 A ER10 mJ
Junction and storage temperature range Tj = Tstg -55 to +175 °C
BYW72, BYW73, BYW74, BYW75, BYW76
www.vishay.com Vishay Semiconductors
Rev. 1.8, 21-Feb-18 2Document Number: 86050
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (Tamb = 25 C, unless otherwise specified)
Fig. 1 - Max. Thermal Resistance vs. Lead Length
Fig. 2 - Max. Forward Current vs. Forward Voltage
Fig. 3 - Max. Average Forward Current vs. Ambient Temperature
Fig. 4 - Max. Reverse Current vs. Junction Temperature
MAXIMUM THERMAL RESISTANCE (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Junction ambient Lead length l = 10 mm, TL = constant RthJA 25 K/W
On PC board with spacing 25 mm RthJA 70 K/W
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT
Forward voltage IF = 3 A VF- 0.95 1.1 V
Reverse current VR = VRRM IR-15μA
VR = VRRM, Tj = 150 °C IR- 60 150 μA
Reverse recovery time IF = 0.5 A, IR = 1 A, iR = 0.25 A trr - - 200 ns
0
10
20
30
40
151050 202530
R
thJA
- Ther. Resist. Junction/Ambient (K/W)
l - Lead Length (mm)
949548
ll
TL = constant
IF - Forward Current (A)
0.001
0.01
0.1
1
10
100
0 0.4 0.8 1.2 2.01.6
VF - Forward Voltage (V)
16355
T
j
= 25 °C
T
j
= 175 °C
16356
I
FAV
- Average Forward Current (A)
0 20 40 60 80 100 120 140 160 180
Tamb - Ambient Temperature (°C)
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
V
R
= V
RRM
half sinewave
R
thJA
= 70 K/W
PCB: d = 25 mm
R
thJA
= 45 K/W
I = 10 mm
1
10
100
1000
25 50 75 100 125 150 175
Tj - Junction Temperature (°C)
16357
IR - Reverse Current (A)
V
R
= V
RRM
BYW72, BYW73, BYW74, BYW75, BYW76
www.vishay.com Vishay Semiconductors
Rev. 1.8, 21-Feb-18 3Document Number: 86050
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 5 - Max. Reverse Power Dissipation vs. Junction Temperature Fig. 6 - Diode Capacitance vs. Reverse Voltage
Fig. 7 - Thermal Response
PACKAGE DIMENSIONS in millimeters (inches): SOD-64
0
50
250
100
150
200
300
25 50 75 100 125 150 175
T
j
- Junction Temperature (°C)
16358
PR - Reverse Power Dissipation (mW)
P
R
-Limit
at 100 % V
R
P
R
-Limit
at 80 % V
R
V
R
= V
RRM
0
10
20
30
50
70
40
60
80
90
0.1 1 10 100
V
R
- Reverse Voltage (V)
16359
C
D
- Diode Capacitance (pF)
f = 1 MHz
1
10
100
1000
10
-4
10
2
10
1
10
0
10
2
10
1
10
-0
10
-1
10
-2
10
-3
tp - Pulse Length (s)I
FRM - Repetitive Peak
Forward Current (A)
949562
Zthp - Thermal Resist. for Pulse Cond. (K/W)
t
p
/T = 0.5
0.2
0.02
0.05
0.01
0.1
V
RRM
= 600 V
R
thJA
= 70 K/W
T
amb
= 25 °C
45 °C
70 °C
100 °C
Cathode Identification 4.3 (0.168) max.
1.35 (0.053) max.
4 (0.156) max.
Sintered Glass Case
SOD-64
26(1.014) min. 26 (1.014) min.
Document-No.: 6.563-5006.4-4
Rev. 3 - Date: 09.February.2005
94 9587
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www.vishay.com Vishay
Revision: 08-Feb-17 1Document Number: 91000
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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