© Semiconductor Components Industries, LLC, 2005
September, 2005 − Rev. 6 1Publication Order Number:
MBRB20200CT/D
MBRB20200CT
SWITCHMODEt
Power Rectifier
Dual Schottky Rectifier
This device uses the Schottky Barrier technology with a platinum
barrier metal. This state−of−the−art device is designed for use in high
frequency switching power supplies and converters with up to 48 V
outputs. They block up to 200 V and offer improved Schottky
performance at frequencies from 250 kHz to 5.0 MHz.
Features
•200 V Blocking Voltage
•Low Forward Voltage Drop
•Guardring for Stress Protection and High dv/dt Capability
(10,000 V/ms)
•Dual Diode Construction − Terminals 1 and 3 Must be Connected for
Parallel Operation at Full Rating
•Pb−Free Packages are Available
Mechanical Characteristics:
•Case: Epoxy, Molded, Epoxy Meets UL 94 V−0
•Weight: 1.7 Grams (Approximately)
•Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
•Lead and Mounting Surface Temperature for Soldering
Purposes: 260°C Max. for 10 Seconds
•Device Meets MSL1 Requirements
MAXIMUM RATINGS (Per Leg)
Rating Symbol Value Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
200 V
Average Rectified Forward Current
(At Rated VR, TC = 134°C) Per Leg
Per Device
IF(AV)
10
20
A
Peak Repetitive Forward Current
(At Rated VR, Square Wave, 20 kHz,
TC = +137°C) Per Leg
IFRM 20 A
Nonrepetitive Peak Surge Current
(Surge Applied at Rated Load Conditions
Halfwave, Single Phase, 60 Hz)
IFSM 150 A
Peak Repetitive Reverse Surge Current
(2.0 ms, 1.0 kHz) IRRM 1.0 A
Storage Temperature Range Tstg −65 to +175 °C
Operating Junction Temperature TJ−65 to +150 °C
Voltage Rate of Change (Rated VR) dv/dt 10,000 V/ms
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
SCHOTTKY BARRIER
RECTIFIER
20 AMPERES, 200 V
1
3
4
http://onsemi.com
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
ORDERING INFORMATION
D2PAK
CASE 418B
PLASTIC
3
4
1
MARKING DIAGRAM
B20200G
AKA
A = Assembly Location
Y = Year
WW = Work Week
B20200 = Device Code
G = Pb−Free Package
AKA = Diode Polarity
AY WW
MBRB20200CT
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2
THERMAL CHARACTERISTICS (Per Leg)
Characteristic Symbol Value Unit
Thermal Resistance, Junction−to−Case RqJC 2.0 °C/W
ELECTRICAL CHARACTERISTICS (Per Leg)
Characteristic Symbol Value Unit
Maximum Instantaneous Forward Voltage (Note 1)
(IF = 10 A, TC = 25°C)
(IF = 10 A, TC = 125°C)
(IF = 20 A, TC = 25°C)
(IF = 20 A, TC = 125°C)
VF0.9
0.8
1.0
0.9
V
Maximum Instantaneous Reverse Current (Note 1)
(Rated dc Voltage, TC = 25°C)
(Rated dc Voltage, TC = 125°C)
IR1.0
50
mA
DYNAMIC CHARACTERISTICS (Per Leg)
Capacitance (VR = −5.0 V, TC = 25°C, Frequency = 1.0 MHz) CT500 pF
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤2.0%.
ORDERING INFORMATION
Device Package Shipping†
MBRB20200CT D2PAK 50 Units / Rail
MBRB20200CTG D2PAK
(Pb−Free) 50 Units / Rail
MBRB20200CTT4 D2PAK 800 Units / Tape & Reel
MBRB20200CTT4G D2PAK
(Pb−Free) 800 Units / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
MBRB20200CT
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3
Figure 1. Typical Forward Voltage (Per Leg)
100
70
50
20
10
7
5
2
10.2 0.4 0.6 0.8 1
TJ = 125°C
TJ = 100°C
TJ = 25°C
vF, INSTANTANEOUS VOLTAGE (V)
TJ = 150°C
I , INSTANEOUS FORWARD CURRENT (AMP)
F
I , REVERSE CURRENT ( A)
Rμ
VR, REVERSE CURRENT (V)
10,000
1,000
100
10
1
0.1
0.01 20 40 60 80 100 120 140 160 180 200
TJ = 125°C
TJ = 100°C
TJ = 150°C
TJ = 25°C
Figure 2. Typical Reverse Current (Per Leg)
0
40
36
32
28
24
20
16
12
8
4
0
0 5 10 15 20 25 30 35
TJ = 125°C
10
dc
SQUARE
WAVE
IPK
IAV
= 20
IF(AV), AVERAGE FORWARD CURRENT (A)
Figure 3. Forward Power Dissipation
P , AVERAGE POWER DISSIPATION (WATTS)
F(AV)
25
20
15
10
5
090 100 110 120 130 140 150 160
I , AVERAGE FORWARD CURRENT (AMPS)
F(AV)
TC, CASE TEMPERATURE (°C)
Figure 4. Current Derating, Case
SQUARE
WAVE
dc
RATED VOLTAGE
RqJC = 2°C/W
I , AVERAGE FORWARD CURRENT (AMPS)
F(AV)
RqJA = 16°C/W
RATED VOLTAGE
20
16
12
8
4
0
TA, AMBIENT TEMPERATURE (°C)
Figure 5. Current Derating, Ambient
dc
SQUARE
WAVE
0 25 50 75 100 125 150 175
500
400
300
200
100
0
C, CAPACITANCE (pF)
TJ = 25°C
VR, REVERSE VOLTAGE (V)
1 2 5 10 20 50 70 100
Figure 6. Typical Capacitance (Per Leg)
MBRB20200CT
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4
PACKAGE DIMENSIONS
D2PAK 3
CASE 418B−04
ISSUE J
SEATING
PLANE
S
G
D
−T−
M
0.13 (0.005) T
231
4
3 PL
K
J
H
V
E
C
A
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A0.340 0.380 8.64 9.65
B0.380 0.405 9.65 10.29
C0.160 0.190 4.06 4.83
D0.020 0.035 0.51 0.89
E0.045 0.055 1.14 1.40
G0.100 BSC 2.54 BSC
H0.080 0.110 2.03 2.79
J0.018 0.025 0.46 0.64
K0.090 0.110 2.29 2.79
S0.575 0.625 14.60 15.88
V0.045 0.055 1.14 1.40
−B−
M
B
W
W
NOTES:
1. DIMENSIONING AND TOLERANCING
PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. 418B−01 THRU 418B−03 OBSOLETE,
NEW STANDARD 418B−04.
F0.310 0.350 7.87 8.89
L0.052 0.072 1.32 1.83
M0.280 0.320 7.11 8.13
N0.197 REF 5.00 REF
P0.079 REF 2.00 REF
R0.039 REF 0.99 REF
M
L
F
M
L
F
M
L
F
VARIABLE
CONFIGURATION
ZONE RN P
U
VIEW W−W VIEW W−W VIEW W−W
123
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
8.38
0.33
1.016
0.04
17.02
0.67
10.66
0.42
3.05
0.12
5.08
0.20
ǒmm
inchesǓ
SCALE 3:1
MBRB20200CT
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5
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to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051
Phone: 81−3−5773−3850
MBRB20200CT/D
SWITCHMODE is a trademark of Semiconductor Components Industries, LLC.
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