©2002 Fairchild Semiconductor Corporation Rev. A1, August 2002
BC182LB
Absolute Maximum Ratings TC=25°C unless otherwise noted
Electrical Characteristics TC=25°C unless otherwise noted
Symbol Parameter Value Units
VCEO Collector-Emitter Voltage 50 V
VCBO Collector-Base Voltage 60 V
VEBO Emitter-Base Voltage 6 V
ICCollector Current - Continuous 100 mA
TJ, TSTG Storage Junction Temperature Range - 55 ~ 150 °C
Symbol Parame ter Tes t C ondition Min. Typ. Max. Units
Off Characteristics
V(BR)CEO Collector-Emitter Breakdown V oltage IC = 2mA, IB = 0 50 V
V(BR)CBO Collector-Base Breakdown Voltage IC = 10µA, IE = 0 60 V
V(BR)EBO Emitter-Base Breakdown Volt age IE = 100µA, IC = 0 6 V
ICBO Coll ector Cut-off Current VCB = 50V, VBE = 0 15 nA
IEBO Emitter-Base Leakage Current VEB = 4V, IE = 0 15 nA
On Characteristics
hFE DC Current Gain VCE = 5V, IC = 10µA
VCE = 5V, IC = 100mA 40
80
VCE(sat) Collector-Emitter Saturation Voltage IC = 10mA, IB = 0.5mA
IC = 100mA, IB = 5mA 0.25
0.6 V
VBE(sat) Base-Emitter Saturation Voltage IC = 100mA, IB = 5mA 1.2 V
VBE(on) Base-Emitter On Voltage VCE = 5V, IC = 2mA 0.55 0.7 V
Dynamic Characteristics
fTCurrent Gain Bandwidth Product VCE = 5V, IC = 10mA, f = 100MHz 150 MHz
Cob Output Capacitance VCE = 10V, IC = 0, f = 1MHz 5 pF
hfe Small Signal Current Gain VCE = 5V, IC = 2mA, f = 1KHz 240 500
NF Noise Figure VCE = 5V, IC = 0.2mA
RS = 2KΩ, f = 1KHz, BW = 200Hz 10 dB
BC182LB
NPN General Purpose Amplifier
• This device is designed for general purpose amplifier application at
collector currents to 100mA.
• Sourced from process 10.
1. Emitter 2. Collector 3. Base
TO-92
1
©2002 Fairchild Semiconductor Corporation
BC182LB
Rev. A1, August 2002
Thermal Charac teris tics TA=25°C unless otherwise noted
Symbol Parameter Max. Units
PDTotal Device D issipat ion @TA=25°C
Derate above 25°C350
2.8 mW
mW/°C
RθJA Thermal Resistance, Junction to Ambient 357 mW/°C
RθJC Thermal Resistance, Junction to Case 125 °C/W
Package Dimensions
BC182LB
0.46 ±0.10
1.27TYP
(R2.29)
3.86MAX
[1.27 ±0.20]1.27TYP
[1.27 ±0.20]
3.60 ±0.20
14.47 ±0.40
1.02 ±0.10
(0.25) 4.58 ±0.20
4.58 +0.25
–0.15
0.38 +0.10
–0.05
0.38 +0.10
–0.05
TO-92
Dimensions in Millimeters
©2002 Fairchild Semiconductor Corporation Rev. A1, August 2002
©2002 Fairchild Semiconductor Corporation Rev. I1
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