Copyright 2002 Semicoa Semiconductors, Inc.
Rev. G 333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541 Page 1 of 2
www.SEMICOA.com
2N3700UB
Silicon NPN Transisto
r
Data Sheet
Description
Semicoa Semiconductors offers:
• Screening and processing per MIL-PRF-19500 Appendix E
• JAN level (2N3700UBJ)
• JANTX level (2N3700UBJX)
• JANTXV level (2N3700UBJV)
• JANS level (2N3700UBJS)
• QCI to the applicable level
• 100% die visual inspection per MIL-STD-750 method
2072 for JANTXV and JANS
• Radiation testing (total dose) upon request
Please contact Semicoa for special configurations
www.SEMICOA.com or (714) 979-1900
Applications
• General purpose
• Low power
• NPN silicon transistor
Features
• Hermetically sealed Cersot ceramic
• Also available in chip configuration
• Chip geometry 4500
• Reference document:
MIL-PRF-19500/391
Benefits
• Qualification Levels: JAN, JANTX,
JANTXV and JANS
• Radiation testing available
Absolute Maximum Ratings TC = 25°C unless otherwise specified
Parameter Symbol Rating Unit
Collector-Emitter Voltage VCEO 80 Volts
Collector-Base Voltage VCBO 140 Volts
Emitter-Base Voltage VEBO 7 Volts
Collector Current, Continuous IC 1 A
Power Dissipation, TA = 25OC
Derate linearly above 37.5OC PT 0.5
3.08
W
mW/°C
Power Dissipation, TC = 25OC
Derate linearly above 25OC PT 1.16
6.63
W
mW/°C
Thermal Resistance RθJA 325 °C/W
Operating Junction Temperature
Storage Temperature
TJ
TSTG -65 to +200 °C
Copyright 2002 Semicoa Semiconductors, Inc.
Rev. G 333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541 Page 2 of 2
www.SEMICOA.com
2N3700UB
Silicon NPN Transisto
r
Data Sheet
ELECTRICAL CHARACTERISTICS
characteristics specified at TA = 25°C
Off Characteristics
Parameter Symbol Test Conditions Min Typ Max Units
Collector-Emitter Breakdown Voltage V(BR)CEO I
C = 30 mA 80 Volts
Collector-Base Cutoff Current ICBO1 V
CB = 140 Volts 10 µA
Collector-Emitter Cutoff Current ICES1 V
CE = 90 Volts 10 nA
Collector-Emitter Cutoff Current ICES2 VCE = 90 Volts, TA = 150°C 10
µA
Emitter-Base Cutoff Current IEBO1 V
EB = 7 Volts 10 µA
Emitter-Base Cutoff Current IEBO2 V
EB = 5 Volts 10 nA
On Characteristics Pulse Test: Pulse Width = 300 µs, Duty Cycle ≤ 2.0%
Parameter Symbol Test Conditions Min Typ Max Units
DC Current Gain
hFE1
hFE2
hFE3
hFE4
hFE5
hFE6
IC = 150 mA, VCE = 10 Volts
IC = 0.1 mA, VCE = 10 Volts
IC = 10 mA, VCE = 10 Volts
IC = 500 mA, VCE = 10 Volts
IC = 1 A, VCE = 10 Volts
IC = 150 mA, VCE = 10 Volts
TA = -55°C
100
50
90
50
15
40
300
200
200
Base-Emitter Saturation Voltage VBEsat I
C = 150 mA, IB = 15 mA 1.1 Volts
Collector-Emitter Saturation Voltage VCEsat1
VCEsat2
IC = 150 mA, IB = 15 mA
IC = 500 mA, IB = 50 mA
0.2
0.5 Volts
Dynamic Characteristics
Parameter Symbol Test Conditions Min Typ Max Units
Magnitude – Common Emitter, Short
Circuit Forward Current Transfer Ratio |hFE| VCE = 10 Volts, IC = 50 mA,
f = 20 MHz 5 20
Small Signal Short Circuit Forward
Current Transfer Ratio hFE VCE = 5 Volts, IC = 1 mA,
f = 1 kHz 80 400
Open Circuit Output Capacitance COBO VCB = 10 Volts, IE = 0 mA,
100 kHZ < f < 1 MHz 12
pF
Open Circuit Input Capacitance CIBO VEB = 0.5 Volts, IC = 0 mA,
100 kHZ < f < 1 MHz 60
pF
Collector Base time constant rb’CC VCB = 10 Volts, IE = 10 mA,
f = 79.8 MHz 400
ps
Noise Figure NF VCE = 10 Volts, IC = 100 µA,
f = 200 Hz, Rg = 1 kΩ
4 dB
Switching Characteristics
Saturated Turn-On Time tON +tOFF 30 ns
