Mar. 2003
MITSUBISHI SEMICONDUCTORS <HVIC>
M81705FP
HIGH VOLTAGE HIGH SIDE DRIVER
µA
mA
mA
V
V
V
V
µA
µA
V
V
µs
mA
mA
mA
Ω
Ω
Ω
ns
ns
ns
ns
V
—
0.25
0.50
14.9
—
2.5
0.8
–50
–200
10.5
0.2
—
—
—
—
—
—
—
100
100
—
—
1.5
—
0.50
0.75
—
—
3.0
1.5
–20
–100
11.5
0.5
5
–125
40
150
120
50
100
—
—
220
110
2.5
1.0
0.75
1.00
—
0.1
4.0
2.0
—
—
12.5
0.8
—
—
—
—
160
60
130
500
500
—
—
4.0
Floating Supply Leakage Current
VBS Standby Current
VCC Standby Current
High Level Output Voltage
Low Level Output Voltage
High Level Input Threshold Voltage
Low Level Input Threshold Voltage
High Level Input Bias Current
Low Level Input Bias Current
VBS Supply UV Reset Voltage
VBS Supply UV Hysteresis Voltage
VBS Supply UV Filter Time
Output High Level Short Circuit Pulsed Current
Output Low Level Short Circuit Pulsed Current
Output Low Level Short Circuit Pulsed Current
Output High Level On Resistance
Output Low Level On Resistance1
Output Low Level On Resistance2
High Side Turn-On Propagation Delay
High Side Turn-Off Propagation Delay
High Side Turn-On Rise Time
High Side Turn-Off Fall Time
R
OL1
/R
OL2
Switching Output Voltage
Symbol UnitParameter Test conditions Limits
Min. Typ.* Max.
VB=VS=600V
IO=0A
IO=0A
VIN=5V
VIN=0V
VO=0V, VIN=0V, PW<10µs
VO=1V, VIN=5V, PW<10µs
VO=15V, VIN=5V, PW<10µs
IO=–100mA, ROH=(VOH-VO)/IO
VO=1V, ROL1=VO/IO
VO=5V, ROL2=VO/IO
CL=1000pF between OUT – VS
CL=1000pF between OUT – VS
CL=1000pF between OUT – VS
CL=1000pF between OUT – VS
IFS
IBS
ICC
VOH
VOL
VIH
VIL
IIH
IIL
VBSuvr
VBSuvh
tVBSuv
IOH
IOL1
IOL2
ROH
ROL1
ROL2
tdLH
tdHL
tr
tf
VOth
ELECTRICAL CHARACTERISTICS (Ta=25°C, VCC=VBS (=VB–VS)=15V, unless otherwise specified)
* Typ. is not specified.