©2004 Fairchild Semiconductor Corporation BAV70 / 74, Rev. D1
BAV70 / 74
Small Signal Diode
Absolute Maximum Ratings *
T
A
= 25°C unless otherwise noted
* These ratings are limiting values above which the serviceability of the diode may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Charac t eris tics
Electrical Characteristics
T
A
=25°C unless otherwise noted
Symbol Parameter Value Units
V
RRM
Maximum Re petitive Reverse Volt age BAV70
BAV74 70
50 V
V
I
F(AV)
Average Rectified Forward Current 200 mA
I
FSM
Non-repetitive Peak Forward Surge Current
Pulse Wi dth = 1.0 second
Pulse Wi dth = 1.0 microsec ond 1.0
2.0 A
A
T
STG
Storage Temperature Range -55 to +150 °C
T
J
Operating Junction Temperature 150 °C
Symbol Parameter Value Units
P
D
Power Dissipation 350 mW
R
θJA
Thermal Resistance, Junction to Ambient 357 °C/W
Symbol Parameter Test Conditions Min. Max. Units
V
R
Breakdown Voltage BAV70
BAV74 I
R
= 100µA
I
R
= 5.0µA75
50 V
V
V
F
Forward Voltage BAV70
BAV74
I
F
= 1.0mA
I
F
= 10mA
I
F
= 50mA
I
F
= 150mA
I
F
= 100mA
715
855
1.0
1.25
1.0
mV
mV
V
V
V
I
R
Revers e Leakage BAV70
BAV74
V
R
= 25V, T
A
= 150°C
V
R
= 70V
V
R
= 70V, T
A
= 150°C
V
R
= 50V
V
R
= 50V, T
A
= 150°C
60
5.0
100
100
100
µA
µA
µA
nA
µA
C
T
Total Capacitance BAV70
BAV74 V
R
= 0V, f = 1.0MHz
V
R
= 0V, f = 1.0MHz 1.5
2.0 pF
pF
t
rr
Reverse Recovery Time BAV70
BAV74
I
F
= I
R
= 10mA, I
RR
= 1.0mA,
R
L
= 100Ω
I
F
= I
R
= 10mA, I
RR
= 1.0mA,
R
L
= 100Ω
6.0
4.0
ns
ns
BAV70 / 74
Connection Diagram
12
3
A4
1
2
3
SOT-23
3
12
BAV70 A4 BAV74 JA
MARKING
©2004 Fairchild Semiconductor Corporation
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Design This datasheet contains the design specifications for
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Rev. I13
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