Microsemi reserves the right to change, without notice, the specifications and information contained herein. Visit
our web site at www.advancedpower.com or contact our factory direct.
1015MP
15 Watts, 50 Volts
Avionics 1025 - 1150 MHz
GENERAL DESCRIPTION
The 1015 MP is a COMMON BASE bipolar transistor. It is designed for pulsed
systems up to 1150 MHz. The device has gold thin-film metallization for proven
highest MTTF. The transistor includes input prematch for broadband capability.
Low thermal resistance package reduces junction temperature, extends life.
CASE OUTLINE
55FW
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation @ 25oC2 50 Watts Pk
Maximum Voltage and Current
BVces Collector to Emitter Voltage 65 Volts
BVebo Emitter to Base Voltage 3.5 Volts
Ic Collector Current 1.0 Amps Pk
Maximum Temperatures
Storage Temperature - 65 to + 150oC
Operating Junction Temperature + 200oC
ELECTRICAL CHARACTERISTICS @ 25°C
SYMBOL CHARACTERISTICS TEST CONDITIONS MIN TYP MAX UNITS
POUT Power Out F= 1150 MHz 15 W
PIN Power Input Vcc = 50 Volts 1.5 W
PG Power Gain PW = 10 µsec, DF = 1% 10 11 dB
ηc Efficiency 40 %
VSWR Load Mismatch Tolerance F = 1150 MHz 10:1
FUNCTIONAL CHARACTERISTICS @ 25°C
BVebo Emitter to Base Breakdown Ie = 5 mA 3.5 V
BVces Collector to Emitter Breakdown Ic = 15mA 65 V
Hfe DC Current Gain Vce = 5V, Ic = 100 mA 20
Cob Output Capacitance Vcb = 50 V, f = 1 MHz 5.0 7.5 pF
θjc1 Thermal Resistance 3.5 oC/W
Note 1: At rated output power and pulse conditions
Rev A: Updated June 2009
Microsemi reserves the right to change, without notice, the specifications and information contained herein. Visit
our web site at www.advancedpower.com or contact our factory direct.
1015MP CASE DRAWING:
Microsemi reserves the right to change, without notice, the specifications and information contained herein. Visit
our web site at www.advancedpower.com or contact our factory direct.
1015MP TEST CIRCUIT:
