SPICE MODEL: BSS84 BSS84 P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features * * * * * * Low On-Resistance Low Gate Threshold Voltage A Low Input Capacitance Fast Switching Speed B Low Input/Output Leakage * * * * C G TOP VIEW S Available in Lead Free/RoHS Compliant Version (Note 3) D E G Mechanical Data * * * * * SOT-23 D H Case: SOT-23 K Case Material: UL Flammability Classification Rating 94V-0 J Moisture sensitivity: Level 1 per J-STD-020C Terminals: Solderable per MIL-STD-202, Method 208 M L Drain Also Available in Lead Free Plating (Matte Tin Finish). Please see Ordering Information, Note 5, on Page 2 Terminal Connections: See Diagram Gate Marking (See Page 2): K84 Ordering & Date Code Information: See Page 2 Dim Min Max A 0.37 0.51 B 1.20 1.40 C 2.30 2.50 D 0.89 1.03 E 0.45 0.60 G 1.78 2.05 H 2.80 3.00 J 0.013 0.10 K 0.903 1.10 L 0.45 0.61 M 0.085 0.180 a 0 8 All Dimensions in mm Source Weight: 0.008 grams (approx.) Maximum Ratings @ TA = 25C unless otherwise specified Characteristic Symbol Value Units Drain-Source Voltage VDSS -50 V Drain-Gate Voltage RGS 20KW VDGR -50 V VGSS 20 V Gate-Source Voltage Continuous Drain Current (Note 1) Continuous Total Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient Operating and Storage Temperature Range Electrical Characteristics Characteristic ID -130 mA Pd 300 mW RqJA 417 C/W Tj, TSTG -55 to +150 C @ TA = 25C unless otherwise specified Symbol Min Typ Max Unit Test Condition BVDSS -50 3/4 3/4 V VGS = 0V, ID = -250A Zero Gate Voltage Drain Current IDSS 3/4 3/4 3/4 3/4 3/4 3/4 -15 -60 -100 A A nA VDS = -50V, VGS = 0V, TJ = 25C VDS = -50V, VGS = 0V, TJ = 125C VDS = -25V, VGS = 0V, TJ = 25C Gate-Body Leakage IGSS 3/4 3/4 10 nA VGS = 20V, VDS = 0V OFF CHARACTERISTICS (Note 2) Drain-Source Breakdown Voltage ON CHARACTERISTICS (Note 2) VGS(th) -0.8 3/4 -2.0 V VDS = VGS, ID = -1mA RDS (ON) 3/4 3/4 10 W VGS = -5V, ID = -0.100A gFS 0.05 3/4 3/4 S VDS = -25V, ID = -0.1A Input Capacitance Ciss 3/4 3/4 45 pF Output Capacitance Coss 3/4 3/4 25 pF Reverse Transfer Capacitance Crss 3/4 3/4 12 pF Turn-On Delay Time tD(ON) 3/4 10 3/4 ns Turn-Off Delay Time tD(OFF) 3/4 18 3/4 ns Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance DYNAMIC CHARACTERISTICS VDS = -25V, VGS = 0V f = 1.0MHz SWITCHING CHARACTERISTICS VDD = -30V, ID = -0.27A, RGEN = 50W, VGS = -10V Note: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 2. Short duration test pulse used to minimize self-heating effect. 3. No purposefully added lead. DS30149 Rev. 9 - 2 1 of 3 www.diodes.com BSS84 a Diodes Incorporated Ordering Information Notes: (Note 4) Device Packaging Shipping BSS84-7 SOT-23 3000/Tape & Reel 4. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. 5. For Lead Free/RoHS Compliant version part number, please add "-F" suffix to part number above. Example: BSS84-7-F. Marking Information YM K84 = Product Type Marking Code YM = Date Code Marking Y = Year ex: N = 2002 M = Month ex: 9 = September K84 Date Code Key Year 1998 1999 2000 2001 2002 2003 2004 2005 2006 2007 2008 2009 Code J K L M N P R S T U V W Month Jan Feb March Apr May Jun Jul Aug Sep Oct Nov Dec Code 1 2 3 4 5 6 7 8 9 O N D -600 TA = 25C ID, DRAIN SOURCE CURRENT (mA) PD, POWER DISSIPATION (mW) 350 300 250 200 150 100 50 0 0 25 50 75 100 125 150 175 -4.5V -400 -300 -3.5V -200 -3.0V -100 200 TA, AMBIENT TEMPERATURE (C) Fig. 1, Max Power Dissipation vs Ambient Temperature DS30149 Rev. 9 - 2 VGS = -5V -500 -2.5V 0 0 -1 -2 -3 -4 -5 VDS, DRAIN SOURCE (V) Fig. 2, Drain Source Current vs. Drain Source Voltage 2 of 3 www.diodes.com BSS84 -1.0 10 9 ID, DRAIN CURRENT (A) -0.8 8 7 TA = -55C -0.6 6 TA = 25C 5 TA = 125C -0.4 4 3 2 -0.2 TA = 125C 1 TA = 25C 0 0.0 0 -1 -2 -3 -4 -5 -6 -7 0 -8 VGS, GATE-TO-SOURCE VOLTAGE (V) Fig. 3, Drain Current vs. Gate Source Voltage 15 -1 -2 -5 -4 -3 VGS, GATE TO SOURCE (V) Fig. 4, On Resistance vs. Gate Source Voltage 25.0 VGS = -10V ID = -0.13A 20.0 12 VGS = -3.5V VGS = -3V VGS = -4.5V 15.0 9 VGS = -5V 6 10.0 3 5.0 VGS = -4V VGS = -6V VGS = -8V VGS = -10V 0.0 0 -50 -25 0 25 50 75 100 150 125 TJ, JUNCTION TEMPERATURE (C) Fig. 5, On-Resistance vs. Junction Temperature DS30149 Rev. 9 - 2 3 of 3 www.diodes.com 0.0 -0.2 -0.4 -0.6 -0.8 1.0 ID, DRAIN CURRENT (A) Fig. 6, On-Resistance vs. Drain Current BSS84