DS30149 Rev. 9 - 2 1 of 3 BSS84
www.diodes.com ã Diodes Incorporated
Characteristic Symbol Value Units
Drain-Source Voltage VDSS -50 V
Drain-Gate Voltage RGS £ 20KWVDGR -50 V
Gate-Source Voltage Continuous VGSS ±20 V
Drain Current (Note 1) Continuous ID-130 mA
Total Power Dissipation (Note 1) Pd300 mW
Thermal Resistance, Junction to Ambient RqJA 417 °C/W
Operating and Storage Temperature Range Tj,T
STG -55 to +150 °C
·Case: SOT-23
·Case Material: UL Flammability Classification Rating 94V-0
·Moisture sensitivity: Level 1 per J-STD-020C
·Terminals: Solderable per MIL-STD-202, Method 208
·Also Available in Lead Free Plating (Matte Tin
Finish). Please see Ordering Information,
Note 5, on Page 2
·Terminal Connections: See Diagram
·Marking (See Page 2): K84
·Ordering & Date Code Information: See Page 2
·Weight: 0.008 grams (approx.)
Mechanical Data
A
E
JL
TOP VIEW
M
BC
H
G
D
K
D
GS
Electrical Characteristics @ TA = 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 2)
Drain-Source Breakdown Voltage BVDSS -50 ¾¾VVGS = 0V, ID = -250µA
Zero Gate Voltage Drain Current IDSS
¾
¾
¾
¾
¾
¾
-15
-60
-100
µA
µA
nA
VDS = -50V, VGS = 0V, TJ= 25°C
VDS = -50V, VGS = 0V, TJ= 125°C
VDS = -25V, VGS = 0V, TJ= 25°C
Gate-Body Leakage IGSS ¾¾±10 nA VGS = ±20V, VDS = 0V
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage VGS(th) -0.8 ¾-2.0 V VDS =V
GS, ID = -1mA
Static Drain-Source On-Resistance RDS (ON) ¾¾10 WVGS = -5V, ID = -0.100A
Forward Transconductance gFS 0.05 ¾¾SVDS = -25V, ID = -0.1A
DYNAMIC CHARACTERISTICS
Input Capacitance Ciss ¾¾45 pF
VDS = -25V, VGS = 0V
f = 1.0MHz
Output Capacitance Coss ¾¾25 pF
Reverse Transfer Capacitance Crss ¾¾12 pF
SWITCHING CHARACTERISTICS
Turn-On Delay Time tD(ON) ¾10 ¾ns VDD = -30V, ID = -0.27A,
RGEN = 50W, VGS = -10V
Turn-Off Delay Time tD(OFF) ¾18 ¾ns
Note: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout
document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. Short duration test pulse used to minimize self-heating effect.
3. No purposefully added lead.
Source
Gate
D
ra
i
n
SOT-23
Dim Min Max
A0.37 0.51
B1.20 1.40
C2.30 2.50
D0.89 1.03
E0.45 0.60
G1.78 2.05
H2.80 3.00
J0.013 0.10
K0.903 1.10
L0.45 0.61
M0.085 0.180
a0°8°
All Dimensions in mm
Maximum Ratings @ TA = 25°C unless otherwise specified
BSS84
P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Features
·Low On-Resistance
·Low Gate Threshold Voltage
·Low Input Capacitance
·Fast Switching Speed
·Low Input/Output Leakage
·Available in Lead Free/RoHS Compliant Version
(Note 3)
SPICE MODEL: BSS84
DS30149 Rev. 9 - 2 2 of 3 BSS84
www.diodes.com
Month Jan Feb March Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1234567
89 OND
Date Code Key
K84 = Product Type Marking Code
YM = Date Code Marking
Y = Year ex: N = 2002
M = Month ex: 9 = September
K84
YM
Marking Information
Notes: 4. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
5. For Lead Free/RoHS Compliant version part number, please add "-F" suffix to part number above.
Example: BSS84-7-F.
Device Packaging Shipping
BSS84-7 SOT-23 3000/Tape & Reel
Ordering Information (Note 4)
Year 1998 1999 2000 2001 2002 2003 2004 2005 2006 2007 2008 2009
Code JKLMNPR
ST U VW
0
50
100
25 50 75 100 125 150 175 200
P , POWER DISSIPATION (mW)
D
T , AMBIENT TEMPERATURE (°C)
A
Fig. 1, Max Power Dissipation vs
Ambient Tem
p
erature
150
200
250
300
350
0
0
-
600
-500
-400
-300
-200
-100
0-2
-1 -5
-4
-3
I , DRAIN SOURCE CURRENT (mA)
D
V , DRAIN SOURCE (V)
DS
Fig. 2, Drain Source Current vs.
Drain Source Volta
g
e
T = 25°C
A
V= -5V
GS
-4.5V
-3.5V
-3.0V
-2.5V
DS30149 Rev. 9 - 2 3 of 3 BSS84
www.diodes.com
0.0
-
1
.
0
-0.8
-0.6
-0.4
-0.2
0-2 -3 -4
-1 -8
-7
-6
-5
I , DRAIN CURRENT (A)
D
V , GATE-TO-SOURCE VOLTAGE (V)
GS
Fi
g
. 3, Drain Current vs. Gate Source Volta
g
e
T = -55°C
A
T = 25°C
A
T= 125°C
A
0
1
2
4
5
3
6
8
7
10
9
0-1 -2 -3 -4 -5
V , GATE TO SOURCE (V)
GS
Fi
g
. 4, On Resistance vs. Gate Source Volta
g
e
T = 25°C
A
T = 125°C
A
0.0
5.0
10.0
0.0 -0.2 -0.4 -0.6 -0.8 1.0
I , DRAIN CURRENT (A)
D
Fi
g
. 6, On-Resistance vs. Drain Current
15.0
20.0
2
5.
0
V = -8V
GS
V = -10V
GS
V = -3V
GS
V= -3.5V
GS
V = -4V
GS
V = -4.5V
GS
V = -6V
GS
V = -5V
GS
0
3
6
9
12
1
5
-50 -25 025 50 125
100
75 150
T,JUNCTION TEMPERATURE (°C)
J
Fi
g
. 5, On-Resistance vs. Junction Temperature
V=-10V
GS
I = -0.13A
D
