DS30149 Rev. 9 - 2 1 of 3 BSS84
www.diodes.com ã Diodes Incorporated
Characteristic Symbol Value Units
Drain-Source Voltage VDSS -50 V
Drain-Gate Voltage RGS £ 20KWVDGR -50 V
Gate-Source Voltage Continuous VGSS ±20 V
Drain Current (Note 1) Continuous ID-130 mA
Total Power Dissipation (Note 1) Pd300 mW
Thermal Resistance, Junction to Ambient RqJA 417 °C/W
Operating and Storage Temperature Range Tj,T
STG -55 to +150 °C
·Case: SOT-23
·Case Material: UL Flammability Classification Rating 94V-0
·Moisture sensitivity: Level 1 per J-STD-020C
·Terminals: Solderable per MIL-STD-202, Method 208
·Also Available in Lead Free Plating (Matte Tin
Finish). Please see Ordering Information,
Note 5, on Page 2
·Terminal Connections: See Diagram
·Marking (See Page 2): K84
·Ordering & Date Code Information: See Page 2
·Weight: 0.008 grams (approx.)
Mechanical Data
A
E
JL
TOP VIEW
M
BC
H
G
D
K
D
GS
Electrical Characteristics @ TA = 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 2)
Drain-Source Breakdown Voltage BVDSS -50 ¾¾VVGS = 0V, ID = -250µA
Zero Gate Voltage Drain Current IDSS
¾
¾
¾
¾
¾
¾
-15
-60
-100
µA
µA
nA
VDS = -50V, VGS = 0V, TJ= 25°C
VDS = -50V, VGS = 0V, TJ= 125°C
VDS = -25V, VGS = 0V, TJ= 25°C
Gate-Body Leakage IGSS ¾¾±10 nA VGS = ±20V, VDS = 0V
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage VGS(th) -0.8 ¾-2.0 V VDS =V
GS, ID = -1mA
Static Drain-Source On-Resistance RDS (ON) ¾¾10 WVGS = -5V, ID = -0.100A
Forward Transconductance gFS 0.05 ¾¾SVDS = -25V, ID = -0.1A
DYNAMIC CHARACTERISTICS
Input Capacitance Ciss ¾¾45 pF
VDS = -25V, VGS = 0V
f = 1.0MHz
Output Capacitance Coss ¾¾25 pF
Reverse Transfer Capacitance Crss ¾¾12 pF
SWITCHING CHARACTERISTICS
Turn-On Delay Time tD(ON) ¾10 ¾ns VDD = -30V, ID = -0.27A,
RGEN = 50W, VGS = -10V
Turn-Off Delay Time tD(OFF) ¾18 ¾ns
Note: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout
document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. Short duration test pulse used to minimize self-heating effect.
3. No purposefully added lead.
Source
Gate
ra
n
SOT-23
Dim Min Max
A0.37 0.51
B1.20 1.40
C2.30 2.50
D0.89 1.03
E0.45 0.60
G1.78 2.05
H2.80 3.00
J0.013 0.10
K0.903 1.10
L0.45 0.61
M0.085 0.180
a0°8°
All Dimensions in mm
Maximum Ratings @ TA = 25°C unless otherwise specified
BSS84
P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Features
·Low On-Resistance
·Low Gate Threshold Voltage
·Low Input Capacitance
·Fast Switching Speed
·Low Input/Output Leakage
·Available in Lead Free/RoHS Compliant Version
(Note 3)