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FDBL86563_F085 N-Channel PowerTrench(R) MOSFET 60 V, 240 A, 1.5 m Features Typical RDS(on) = 1.1 m at VGS = 10V, ID = 80 A Typical Qg(tot) = 130 nC at VGS = 10V, ID = 80 A D UIS Capability RoHS Compliant Qualified to AEC Q101 Applications G Automotive Engine Control PowerTrain Management S Solenoid and Motor Drivers Integrated Starter/Alternator For current package drawing, please refer to the Fairchild web site at http://www.fairchildsemi.com/dwg/PS/PSOF08A.pdf. Primary Switch for 12V Systems MOSFET Maximum Ratings TJ = 25C unless otherwise noted. Symbol VDSS Drain-to-Source Voltage VGS ID EAS PD Parameter Ratings 60 Units V 20 V Gate-to-Source Voltage Drain Current - Continuous (VGS=10) (Note 1) TC = 25C 240 Pulsed Drain Current TC = 25C See Figure 4 Single Pulse Avalanche Energy (Note 2) 614 A mJ Power Dissipation 357 W Derate Above 25oC 2.38 W/oC TJ, TSTG Operating and Storage Temperature RJC Thermal Resistance, Junction to Case RJA Maximum Thermal Resistance, Junction to Ambient -55 to + 175 oC 0.42 oC/W 43 oC/W (Note 3) Notes: 1: Current is limited by silicon. 2: Starting TJ = 25C, L = 0.3mH, IAS = 64A, VDD = 60V during inductor charging and VDD = 0V during time in avalanche. 3: RJA is the sum of the junction-to-case and case-to-ambient thermal resistance, where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design, while RJAis determined by the board design. The maximum rating presented here is based on mounting on a 1 in2 pad of 2oz copper. Package Marking and Ordering Information Device Marking FDBL86563 Device FDBL86563_F085 (c)2015 Fairchild Semiconductor Corporation FDBL86563_F085 Rev. 1.0 Package MO-299A Reel Size 13" 1 Tape Width 24mm Quantity 2000 units www.fairchildsemi.com FDBL86563_F085 N-Channel PowerTrench(R) MOSFET June 2015 Symbol Parameter Test Conditions Min. Typ. Max. Units Off Characteristics BVDSS Drain-to-Source Breakdown Voltage IDSS Drain-to-Source Leakage Current IGSS Gate-to-Source Leakage Current ID = 250A, VGS = 0V VDS = 60V, VGS = 0V 60 - - V - - 1 A TJ = 25oC TJ = 175oC (Note 4) - - 1 mA - - 100 nA 2.0 2.9 4.0 V - 1.1 1.5 m - 2.1 2.9 m VGS = 20V On Characteristics VGS(th) RDS(on) Gate to Source Threshold Voltage Drain to Source On Resistance VGS = VDS, ID = 250A ID = 80A, VGS= 10V TJ = 25oC TJ = 175oC (Note 4) Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance f = 1MHz Qg(ToT) Total Gate Charge at 10V VGS = 0 to 10V Qg(th) Threshold Gate Charge VGS = 0 to 2V Qgs Gate-to-Source Gate Charge Qgd Gate-to-Drain "Miller" Charge VDS = 30V, VGS = 0V, f = 1MHz VDD = 48V ID = 80A - 10300 - pF - 2590 - pF - 270 - pF - 4.3 - - 130 169 nC - 19 - nC - 48 - nC - 20 - nC ns Switching Characteristics ton Turn-On Time - - 160 td(on) Turn-On Delay - 30 - ns tr Rise Time - 77 - ns td(off) Turn-Off Delay - 78 - ns tf Fall Time - 57 - ns toff Turn-Off Time - - 200 ns V VDD = 30V, ID = 80A, VGS = 10V, RGEN = 6 Drain-Source Diode Characteristics VSD Source-to-Drain Diode Voltage trr Reverse-Recovery Time Qrr Reverse-Recovery Charge ISD =80A, VGS = 0V - - 1.25 ISD = 40A, VGS = 0V - - 1.2 V IF = 80A, dISD/dt = 100A/s, VDD=48V - 94 140 ns - 131 200 nC Note: 4: The maximum value is specified by design at TJ = 175C. Product is not tested to this condition in production. (c)2015 Fairchild Semiconductor Corporation FDBL86563_F085 Rev. 1.0 2 www.fairchildsemi.com FDBL86563_F085 N-Channel PowerTrench(R) MOSFET Electrical Characteristics TJ = 25C unless otherwise noted. 1.0 0.8 0.6 0.4 0.2 0.0 VGS = 10V 350 ID, DRAIN CURRENT (A) POWER DISSIPATION MULTIPLIER 400 1.2 CURRENT LIMITED BY SILICON 300 250 200 150 100 50 0 25 50 75 100 125 150 TC, CASE TEMPERATURE(oC) 0 175 25 50 75 100 125 150 175 TC, CASE TEMPERATURE(oC) 200 Figure 2. Maximum Continuous Drain Current vs. Case Temperature Figure 1. Normalized Power Dissipation vs. Case Temperature NORMALIZED THERMAL IMPEDANCE, ZJC 2 DUTY CYCLE - DESCENDING ORDER 1 D = 0.50 0.20 0.10 0.05 0.02 0.01 0.1 PDM t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZJA x RJA + TC SINGLE PULSE 0.01 -5 10 -4 10 -3 -2 -1 0 10 10 10 t, RECTANGULAR PULSE DURATION(s) 1 10 10 Figure 3. Normalized Maximum Transient Thermal Impedance 10000 TC = 25oC IDM, PEAK CURRENT (A) VGS = 10V FOR TEMPERATURES ABOVE 25oC DERATE PEAK CURRENT AS FOLLOWS: 1000 175 - TC I = I2 150 100 SINGLE PULSE 10 -5 10 -4 10 -3 -2 -1 10 10 10 t, RECTANGULAR PULSE DURATION(s) 0 10 1 10 Figure 4. Peak Current Capability (c)2015 Fairchild Semiconductor Corporation FDBL86563_F085 Rev. 1.0 3 www.fairchildsemi.com FDBL86563_F085 N-Channel PowerTrench(R) MOSFET Typical Characteristics 2000 1000 If R = 0 tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD) If R 0 tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS - VDD) +1] IAS, AVALANCHE CURRENT (A) ID, DRAIN CURRENT (A) 1000 100 100us 10 OPERATION IN THIS AREA MAY BE LIMITED BY rDS(on) 1 1ms 10ms 100ms SINGLE PULSE TJ = MAX RATED TC = 25oC 0.1 0.1 IS, REVERSE DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 150 TJ = -55oC 50 0 2 3 4 5 6 7 VGS, GATE TO SOURCE VOLTAGE (V) TJ = 25 oC 1 0.2 0.4 0.6 0.8 1.0 1.2 VGS 150 80s PULSE WIDTH Tj=25oC 100 TJ = 175 oC 10 350 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 200 1000 10000 Figure 8. Forward Diode Characteristics 15V Top 10V 8V 7V 6V 5.5V 5V Bottom 250 100 VSD, BODY DIODE FORWARD VOLTAGE (V) VGS 300 10 VGS = 0 V 100 0.1 0.0 8 Figure 7. Transfer Characteristics 350 1 350 TJ = 25oC TJ = 175oC 0.1 Figure 6. Unclamped Inductive Switching Capability 250 100 0.01 NOTE: Refer to Fairchild Application Notes AN7514 and AN7515 VDD = 5V 200 STARTING TJ = 150oC tAV, TIME IN AVALANCHE (ms) PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX 300 STARTING TJ = 25oC 10 1 0.001 1 10 100 200 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 5. Forward Bias Safe Operating Area 350 100 50 300 15V Top 10V 8V 7V 6V 5.5V 5V Bottom 250 200 150 100 80s PULSE WIDTH Tj=175oC 50 0 0 0 1 2 3 4 VDS, DRAIN TO SOURCE VOLTAGE (V) 5 0 Figure 9. Saturation Characteristics (c)2015 Fairchild Semiconductor Corporation FDBL86563_F085 Rev. 1.0 1 2 3 4 VDS, DRAIN TO SOURCE VOLTAGE (V) 5 Figure 10. Saturation Characteristics 4 www.fairchildsemi.com FDBL86563_F085 N-Channel PowerTrench(R) MOSFET Typical Characteristics ID = 80A NORMALIZED DRAIN TO SOURCE ON-RESISTANCE rDS(on), DRAIN TO SOURCE ON-RESISTANCE (m) 50 PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX 40 30 20 TJ = 175oC TJ = 25oC 10 0 2 4 6 8 VGS, GATE TO SOURCE VOLTAGE (V) 10 Figure 11. RDSON vs. Gate Voltage 2.0 1.6 1.2 0.8 ID = 80A VGS = 10V 0.4 -80 -40 0 40 80 120 160 TJ, JUNCTION TEMPERATURE(oC) 200 Figure 12. Normalized RDSON vs. Junction Temperature 1.10 VGS = VDS ID = 250A 1.2 ID = 5mA 1.05 0.9 1.00 0.6 0.95 0.3 0.0 -80 -40 0 40 80 120 160 TJ, JUNCTION TEMPERATURE(oC) 0.90 -80 200 Figure 13. Normalized Gate Threshold Voltage vs. Temperature VGS, GATE TO SOURCE VOLTAGE(V) Ciss 10000 1000 Coss Crss 100 f = 1MHz VGS = 0V 10 0.1 1 10 VDS, DRAIN TO SOURCE VOLTAGE (V) 100 Figure 15. Capacitance vs. Drain to Source Voltage (c)2015 Fairchild Semiconductor Corporation FDBL86563_F085 Rev. 1.0 -40 0 40 80 120 160 TJ, JUNCTION TEMPERATURE (oC) 200 Figure 14. Normalized Drain to Source Breakdown Voltage vs. Junction Temperature 100000 CAPACITANCE (pF) PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE NORMALIZED GATE THRESHOLD VOLTAGE 1.5 2.4 10 ID = 80A VDD = 30V 8 VDD =24V VDD = 36V 6 4 2 0 0 30 60 90 120 Qg, GATE CHARGE(nC) 150 Figure 16. Gate Charge vs. Gate to Source Voltage 5 www.fairchildsemi.com FDBL86563_F085 N-Channel PowerTrench(R) MOSFET Typical Characteristics AccuPowerTM AttitudeEngineTM Awinda(R) AX-CAP(R)* BitSiCTM Build it NowTM CorePLUSTM CorePOWERTM CROSSVOLTTM CTLTM Current Transfer LogicTM DEUXPEED(R) Dual CoolTM EcoSPARK(R) EfficentMaxTM ESBCTM (R) (R) Fairchild Fairchild Semiconductor(R) FACT Quiet SeriesTM FACT(R) FAST(R) FastvCoreTM FETBenchTM FPSTM F-PFSTM FRFET(R) Global Power ResourceSM GreenBridgeTM Green FPSTM Green FPSTM e-SeriesTM GmaxTM GTOTM IntelliMAXTM ISOPLANARTM Marking Small Speakers Sound Louder and BetterTM MegaBuckTM MICROCOUPLERTM MicroFETTM MicroPakTM MicroPak2TM MillerDriveTM MotionMaxTM MotionGrid(R) MTi(R) MTx(R) MVN(R) mWSaver(R) OptoHiTTM OPTOLOGIC(R) OPTOPLANAR(R) (R)* (R) tm Power Supply WebDesignerTM PowerTrench(R) PowerXSTM Programmable Active DroopTM QFET(R) QSTM Quiet SeriesTM RapidConfigureTM TM Saving our world, 1mW/W/kW at a timeTM SignalWiseTM SmartMaxTM SMART STARTTM Solutions for Your SuccessTM SPM(R) STEALTHTM SuperFET(R) SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SupreMOS(R) SyncFETTM Sync-LockTM TinyBoost(R) TinyBuck(R) TinyCalcTM TinyLogic(R) TINYOPTOTM TinyPowerTM TinyPWMTM TinyWireTM TranSiCTM TriFault DetectTM TRUECURRENT(R)* SerDesTM UHC(R) Ultra FRFETTM UniFETTM VCXTM VisualMaxTM VoltagePlusTM XSTM XsensTM TM *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. 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