To learn more about ON Semiconductor, please visit our website at
www.onsemi.com
Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers
will need to change in order to meet ON Semiconductor’s system requirements. Since the ON Semiconductor
product management systems do not have the ability to manage part nomenclature that utilizes an underscore
(_), the underscore (_) in the Fairchild part numbers will be changed to a dash (-). This document may contain
device numbers with an underscore (_). Please check the ON Semiconductor website to verify the updated
device numbers. The most current and up-to-date ordering information can be found at www.onsemi.com. Please
email any questions regarding the system integration to Fairchild_questions@onsemi.com.
Is Now Part of
ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number
of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right
to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON
Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON
Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA
Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended
or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out
of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor
is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
SGL50N60RUFD — 600 V, 50 A Short Circuit Rated IGBT
November 2013
©1999 Fairchild Semiconductor Corporation 1www.fairchildsemi.com
SGL50N60RUFD Rev. C1
SGL50N60RUFD
600 V, 50 A Short Circuit Rated IGBT
General Description
Fairchild’s RUFD series of Insulated Gate Bipolar
Transistors (IGBTs) provide low conduction and switching
losses as well as short circuit ruggedness. The RUFD
series is designed for applications such as motor control,
uninterrupted power supplies (U PS) and general inverters
where short circuit ruggedness is a required feature.
Features
• 50 A, 600 V, TC = 100°C
• Low Saturation Voltage: VCE(sat) = 2.2 V @ IC = 50 A
• Typical Fall Time. . . . . . . . . .261ns at TJ = 125°C
• High Speed Switching
• High Input Impedance
• Short Circuit Rating
Absolute Maximum Ratings TC = 25C unless otherwise noted
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol Description Ratings Unit
VCES Collector-Emitter Voltage 600 V
VGES Gate-Emitter Voltage 20 V
ICCollector Current @ TC = 25C80 A
Collector Current @ TC = 100C50 A
ICM (1) Pulsed Collector Current 150 A
IFDiode Continuous Forward Current @ TC = 25C60 A
Diode Continuous Forward Current @ TC = 100C30 A
IFM Diode Maximum Forward Current 90 A
TSC Short Circuit Withstand Time @ TC = 100C10 us
PDMaximum Power Dissipation @ TC = 25C 250 W
Maximum Power Dissipation @ TC = 100C 100 W
TJ Operating Junction Temperature -55 to +150 C
Tstg Storage Temperature Range -55 to +150 C
TLMaximum Lead Temp. for Soldering
Purposes, 1/8” from Case for 5 Seconds 300 C
Symbol Parameter Typ. Max. Unit
RJC(IGBT) Thermal Resistance, Junction-to-Case -- 0.5 C/W
RJC(DIODE) Thermal Resistance, Junction-to-Case -- 1.0 C/W
RJA Thermal Resistance, Junction-to-Ambient -- 25 C/W
Applications
Motor Control, UPS, General Inverter.
GCETO-264
G
C
E
G
C
E
©1999 Fairchild Semiconductor Corporation 2www.fairchildsemi.com
SGL50N60RUFD Rev. C1
SGL50N60RUFD — 600 V, 50 A Short Circuit Rated IGBT
Electrical Characteristics of the IGBT TC = 25C unless otherwise noted
Electrical Characteristics of DIODE TC = 25C unless otherwise noted
Symbol Parameter Test Conditions Min. Typ. Max. Unit
Off Characterist ic s
BVCES Collector-Emitter Breakdown Voltage VGE = 0 V, IC = 250 uA 600 -- -- V
BVCES/
TJ
Temperature Coefficient of Breakdown
Voltage VGE = 0 V, IC = 1 mA -- 0.6 -- V/C
ICES Collector Cut-Off Current VCE = VCES, VGE = 0 V -- -- 250 uA
IGES G-E Leakage Current VGE = VGES, VCE = 0 V -- -- ± 100 nA
On Characteristics
VGE(th) G-E Threshold Voltage Ic = 50 mA, VCE = VGE 5.0 6.0 8.5 V
VCE(sat) Collector to Emitter
Saturation Voltage IC = 50 A, VGE = 15 V -- 2.2 2.8 V
IC = 80 A, VGE = 15 V -- 2.5 -- V
Dynamic Characteristics
Cies Input Capacitance VCE=30 V, VGE = 0 V,
f = 1 MHz
-- 3311 -- pF
Coes Output Capacitance -- 399 -- pF
Cres Reverse Transfer Capacitance -- 139 -- pF
Switching Characteristics
td(on) Turn-On Delay Time
VCC = 300 V, IC = 50 A,
RG = 5.9 , VGE = 15 V,
Inductive Load, TC = 25C
-- 26 -- ns
trRise Time -- 89 -- ns
td(off) Turn-Off Delay Time -- 66 100 ns
tfFall Time -- 118 200 ns
Eon Turn-On Switching Loss -- 1.68 -- mJ
Eoff Turn-Off Switching Loss -- 1.03 -- mJ
Ets Total Switching Loss -- 2.71 3.8 mJ
td(on) Turn-On Delay Time
VCC = 300 V, IC = 50 A,
RG = 5.9 , VGE = 15 V,
Inductive Load, TC = 125C
-- 28 -- ns
trRise Time -- 91 -- ns
td(off) Turn-Off Delay Time -- 68 110 ns
tfFall Time -- 261 400 ns
Eon Turn-On Switching Loss -- 1.7 -- mJ
Eoff Turn-Off Switching Loss -- 2.31 -- mJ
Ets Total Switching Loss -- 4.01 5.62 mJ
Tsc Short Circuit Withstand Time VCC = 300 V, VGE = 15 V
@ TC = 100C 10 -- -- us
QgTotal Gate Charge VCE = 300 V, IC = 50 A,
VGE = 15 V
-- 145 210 nC
Qge Gate-Emitter Charge -- 25 35 nC
Qgc Gate-Collector Charge -- 70 100 nC
LeInternal Emitter Inductance Measured 5mm from PKG -- 18 -- nH
Symbol Parameter Test Conditions Min. Typ. Max. Unit
VFM Diode Forward Voltage IF = 30 A TC = 25C-- 1.9 2.8 V
TC = 100C-- 1.8 --
trr Diode Reverse Recovery Time
IF= 30 A,
diF/dt = 200 A/us
TC = 25C-- 70 100 ns
TC = 100C-- 140 --
Irr Diode Peak Reverse Recovery
Current TC = 25C-- 6 7.8 A
TC = 100C-- 8 --
Qrr Diode Reverse Recovery Charge TC = 25C-- 200 360 nC
TC = 100C-- 580 --
©1999 Fairchild Semiconductor Corporation 3www.fairchildsemi.com
SGL50N60RUFD Rev. C1
SGL50N60RUFD — 600 V, 50 A Short Circuit Rated IGBT
Fig 1. Typical Output Characteristics Fig 2. Typical Saturation Voltage Characteristics
Fig 3. Saturation Voltage vs. Case
Temperature at Variant Current Level Fig 4. Load Current vs. Frequency
Fig 5. Saturation Voltage vs. VGE Fig 6. Satu ratio n Voltage vs. VGE
02468
0
20
40
60
80
100
120
140 20V
12V
15V
VGE = 10V
Common Emitter
TC = 25℃
Collector Current, I C [A]
Collector - Emitter Voltage, VCE [V]
110
0
20
40
60
80
100
120
140
Common Emitter
VGE = 15V
TC = 25℃ ━━
TC = 125 ------℃
Collector Current, I C [A]
Co llector - Emit ter Voltage , VCE [V]
-50 0 50 100 150
0
1
2
3
4
5
50A
100A
IC = 30A
Comm on Em itter
VGE = 15V
Collector - Emitter Voltage, V CE [V]
Case Temperature, TC []℃
048121620
0
4
8
12
16
20 Common Em itter
TC = 25℃
100A
50A
IC = 30A
Collector - Emitter Voltage, V CE [V]
Gate - Emitter Voltage, VGE [V]
048121620
0
4
8
12
16
20 Common Emitter
TC = 125℃
100A
50A
IC = 30A
Collector - Emitter Voltage, V CE [V]
Gate - Emitter Voltage, VGE [V]
©1999 Fairchild Semiconductor Corporation 4www.fairchildsemi.com
SGL50N60RUFD Rev. C1
SGL50N60RUFD — 600 V, 50 A Short Circuit Rated IGBT
Fig 7. Capacitance Characteristics Fig 8. Turn-On Characteristics vs.
Gate Resistance
Fig 9. Turn-Off Characteristics vs.
Gate Resistance Fig 10. Switching Loss vs. Gate Resistance
Fig 11. Turn-On Characteristics vs.
Collector Current Fig 12. Turn-Off Characteristics vs.
Collector Current
110
0
1000
2000
3000
4000
5000
6000
7000
Cres
Coes
Cies
Common Emitter
VGE = 0V, f = 1MHz
TC = 25℃
Capacitance [pF]
Collector - Emitter Voltage, VCE [V]
10 100
100
1000 Comm on Em it t e r
VCC = 300V, VGE = ± 15V
IC = 50A
TC = 25℃ ━━
TC = 125 ---- --℃Ton
Tr
Swit ch i n g Time [ n s ]
Gate Resistance, RG []
10 100
100
1000
Toff
Tf
Toff
Tf
Common Emitter
VCC = 300V, V GE = ± 15V
IC = 50A
TC = 25℃ ━━
TC = 125 ------℃
Switchi ng T im e [n s]
Gate Resistance, RG []
10 100
1000
10000
Eoff
Eon
Eoff
Common Emitter
VCC = 300V, VGE = ± 15V
IC = 50A
TC = 25℃ ━━
TC = 125 ------℃
Switch in g Loss [u J]
Gate Resistance, RG []
10 20 40 60 80 100
10
100
1000
Ton
Tr
Common Emitter
VGE = ± 15V, RG = 5.9
TC = 25℃ ━━
TC = 125 ------℃
Switching Time [ns]
Collector Current, IC [A]
10 20 40 60 80 100
100
1000
Tf
Toff
Toff
Tf
Common Emitter
VGE = ± 15V, RG = 5.9
TC = 25℃ ━━
TC = 125 ------℃
Switch ing T im e [n s]
Collector Curren t, IC [A]
©1999 Fairchild Semiconductor Corporation 5www.fairchildsemi.com
SGL50N60RUFD Rev. C1
SGL50N60RUFD — 600 V, 50 A Short Circuit Rated IGBT
10-5 10-4 10-3 10-2 10-1 100101
1E-3
0.01
0.1
1
0.5
0.2
0.1
0.05
0.02
0.01
single pulse
Thermal Response, Zthjc [ /W]℃
Rectangu la r Pu lse Duration [sec]
10 20 40 60 80 100
100
1000
10000
Eoff
Eon
Eoff
Common Emitter
VGE = ± 15V, RG = 5.9
TC = 25℃ ━━
TC = 125 ------℃
Switch ing Loss [uJ]
Collector Current, IC [A]
0 30 60 90 120 150 180
0
3
6
9
12
15
300 V
200 V
VCC = 100 V
Common Emitter
RL = 6
TC = 25℃
Gate - Em it ter Voltag e, VGE [ V ]
Gate Ch ar ge, Qg [ n C ]
1 10 100 1000
1
10
100
Safe Operating Area
VGE = 20V, TC = 100℃
Collector Current, I C [A]
Collector-Em itter Voltage, VCE [V]
Fig 14. Gate Charge Characteristics
Fig 13. Switch in g Lo ss vs . Co lle c to r Curre n t
Fig 15. SOA Characteristics Fig 16. Turn-Off SOA Characteristics
Fig 17. Transient Thermal Impedance of IGBT
Pdm
t1
t2
Duty factor D = t1 / t2
Peak Tj = Pdm
Zthjc + T
C
0.3 1 10 100 1000
0.1
1
10
100
500
Single Nonrepetitive
Pulse TC = 25℃
Curves must be derate d
linearly with increase
in temperature
50us
100us
1㎳
DC Operation
IC MAX. (Continuous)
IC MAX. (Pulsed)
Collector Cu r ren t , I C [A]
Collector-Emitter Voltage, VCE [V]
©1999 Fairchild Semiconductor Corporation 6www.fairchildsemi.com
SGL50N60RUFD Rev. C1
SGL50N60RUFD — 600 V, 50 A Short Circuit Rated IGBT
Fig 19. Reverse Recovery CurrentFig 18. Forward Characteristics
Fig 20. Stored Charge Fig 21. Reverse Recovery Time
1
10
100
01234
TC = 25℃ ━━
TC = 100 ------℃
Forward Voltage Drop, VFM [V]
Forward Current, I F [A]
100 1000
1
10
100 VR = 200V
IF = 30A
TC = 2 5℃ ━━
TC = 100 ------℃
Reverse Recovery Cu r rent , I rr [A]
di/dt [A/us]
100 1000
0
200
400
600
800
1000
1200
1400 VR = 200V
IF = 30A
TC = 25℃ ━━
TC = 100 ------℃
Stored Rec overy Charge, Q rr [nC]
di/dt [A/us]
100 1000
20
40
60
80
100
120
140
160
180
200 VR = 200V
IF = 30A
TC = 25℃ ━━
TC = 100 ------℃
Reverce Recovery Time, t rr [ns]
di/dt [A/us]
©1999 Fairchild Semiconductor Corporation 7www.fairchildsemi.com
SGL50N60RUFD Rev. C1
SGL50N60RUFD — 600 V, 50 A Short Circuit Rated IGBT
Mechanical Dimensions
Figure 22. TO-264 3L - 3LD; TO264; MOLDED; JEDEC VARIATION AA
Package drawings are provided as a service to customers consider ing Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the draw ing and contact a Fairchild Semicond uctor r epresentative to ver ify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specif-
ically the warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TO264-003
©1999 Fairchild Semiconductor Corporation 8www.fairchildsemi.com
SGL50N60RUFD Rev. C1
SGL50N60RUFD — 600 V, 50 A Short Circuit Rated IGBT
TRADEMARKS
The following includes re gistered and unregistere d trademarks and service marks, owned by Fairchild S emiconductor and/or its global subsidiar ies, and is not
intended to be an exhaustive list of all such trademarks.
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY
PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY
THEREIN, WHICH COVERS THESE PRODUCTS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SY STEMS WITHOUT THE
EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used here in:
1. Life support devices or systems are devices or systems which, (a) are
intended for surgical implant into the bo dy or (b ) support or sustain life,
and (c) whose fail ure to perform when properly used in accordan ce with
instructions for use provided in the labeling, can be reasonably
expected to result in a significant injury of the user.
2. A critical component in any component of a life support, device, or
system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or
effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
AccuPower™
AX-CAP®*
BitSiC™
Build it Now™
CorePLUS™
CorePOWER™
CROSSVOLT™
CTL™
Current Transfer Logic™
DEUXPEED®
Dual Cool™
EcoSPARK®
EfficentMax™
ESBC™
Fairchild®
Fairchild Semiconductor®
FACT Quiet Series™
FACT®
FAST®
FastvCore™
FETBench™
FPS™
F-PFS™
FRFET®
Global Power ResourceSM
GreenBridge™
Green FPS™
Green FPS™ e-Series™
Gmax™
GTO™
IntelliMAX™
ISOPLANAR™
Marking Small Speaker s Sound L ouder
and Better™
MegaBuck™
MICROCOUPLER™
MicroFET™
MicroPak™
MicroPak2™
MillerDrive™
MotionMax™
mWSaver®
OptoHiT™
OPTOLOGIC®
OPTOPLANAR®
PowerTrench®
PowerXS™
Programmable Active Droop™
QFET®
QS™
Quiet Series™
RapidConfigure™
Saving our world, 1mW/W/kW at a time™
SignalWise™
SmartMax™
SMART START™
Solutions for Your Success™
SPM®
STEALTH™
SuperFET®
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SupreMOS®
SyncFET™
Sync-Lock™
®*
TinyBoost®
TinyBuck®
TinyCalc™
TinyLogic®
TINYOPTO™
TinyPower™
TinyPWM™
TinyWire™
TranSiC™
TriFault Detect™
TRUECURRENT®*
SerDes™
UHC®
Ultra FRFET™
UniFET™
VCX™
VisualMax™
VoltagePlus™
XS™
®
™
Datasheet Identifi cation Product Status Definition
Advance Information Formative / In Design Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Preliminary First Production Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconduct or reserves the right to make changes at any time without
notice to improve design.
No Identification Needed Full Production Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
ANTI-COUNTERFEITING POLICY
Fairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Fairchild’s Anti-Counterfeiting Policy is also stated on our external website,
www.Fairchildsemi.com, under Sales Support .
Counterfeiting of se miconductor parts is a growing problem in th e industry. All ma nufactures of semiconductor p roducts are exper iencing counterfeiting of their
parts. Customers who inadver tently purcha se counterfeit part s exper ience many problems su ch as loss of brand repu tation , substa ndard perfo rmance, faile d
application, and increased cost of producti on and manuf act uring dela ys. Fairchil d is taking st rong measures to pro tect ourselves and our custo mers from the
proliferation of cou nterfeit parts. Fairchild str ongly encourages cust omers to purchase Fairchild parts either d irectly fr om Fairchild or from Authorized Fairchi ld
Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild
Distributors are genuine parts, have full traceability, meet Fairchild’s quality standards for handing and storage and provide access to Fairchild’s full range of
up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and
warranty issues that may arise. Fairchild will not provide any warranty covera ge or other assistance for parts bought from Unau thorized Sources. Fairchild is
committed to combat this global prob lem and encourage our customers to do their part in stop ping this practice by buying direct or from authorized distribut ors.
Rev. I66
®
www.onsemi.com
1
ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5817−1050
www.onsemi.com
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email: orderlit@onsemi.com
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your local
Sales Representative
© Semiconductor Components Industries, LLC