CYStech Electronics Corp.
Spec. No. : C305A3
Issued Date : 2003.06.13
Revised Date : 2004.02.23
Page No. : 1/4
2N4403A3 CYStek Product Specification
General Purpose PNP Epitaxial Planar Transistor
2N4403A3
Description
• The2N4403A3 is designed for using in driver stage of AF amplifier and general purpose amplification.
• Large IC , IC Max .= -0.6A
• Low VCE(sat), typically -0.2V at IC/IB = -300mA / -30mA. Ideal for low-Voltage operation
• Complementary to 2N4401A3.
Symbol Outline
Absolute Maximum Ratings (Ta=25°C)
Parameter Symbol Limits Unit
Collector-Base Voltage VCBO -40 V
Collector-Emitter Voltage VCEO -40 V
Emitter-Base Voltage VEBO -5 V
Collector Current IC -0.6 A
Power Dissipation Pd 625 mW
Thermal Resistance, Junction to Ambient RθJA 200
°C/W
Junction Temperature Tj 150 °C
Storage Temperature Tstg -55~+150 °C
TO-92
2N4403A3
B：Base
C：Collector
E
：
Emitter E B C
CYStech Electronics Corp.
Spec. No. : C305A3
Issued Date : 2003.06.13
Revised Date : 2004.02.23
Page No. : 2/4
2N4403A3 CYStek Product Specification
Characteristics (Ta=25°C)
Symbol Min. Typ. Max. Unit Test Conditions
BVCBO -40 - - V IC=-100µA
BVCEO -40 - - V IC=-1mA
BVEBO -5 - - V IE=-100µA
ICEX - - -0.1 µA VCE=-35V, VEB=-0.4V
*VCE(sat) 1 - - -0.4 V IC=-150mA, IB=-15mA
*VCE(sat) 2 - - -0.75 V IC=-500mA, IB=-50mA
*VBE(sat) 1 -0.75 - -0.95 V IC=-150mA, IB=-15mA
*VBE(sat) 2 - - -1.3 V IC=-500mA, IB=-50mA
hFE 1 30 - - - VCE=-1V, IC=-0.1mA
hFE 2 60 - - - VCE=-1V, IC=-1mA
hFE 3 100 - - - VCE=-1V, IC=-10mA
*hFE 4 82 - 390 - VCE=-2V, IC=-150mA
*hFE 5 20 - - - VCE=-2V, IC=-500mA
fT 200 - - MHz VCE=-10V, IC=-20mA, f=100MHz
Cob - - 8.5 pF VCB=-10V, f=1MHz
*Pulse Test: Pulse Width ≤380µs, Duty Cycle≤2%
Classification Of hFE 4
Rank P Q R
Range 82~180 120~270 180~390
CYStech Electronics Corp.
Spec. No. : C305A3
Issued Date : 2003.06.13
Revised Date : 2004.02.23
Page No. : 3/4
2N4403A3 CYStek Product Specification
Characteristic Curves
Current Gain vs Collector Current
10
100
1000
0.1 1 10 100 1000
Collector Current---IC(mA)
Current Gain---HFE
HFE@VCE=3V
Saturation Voltage vs Collector Current
10
100
1000
1 10 100 1000
Collector Current---IC(mA)
Saturation Voltage---(mV)
VCE(SAT)@IC=10IB
Saturation Voltage vs Collector Current
100
1000
0.1 1 10 100 1000
Collector Current---IC(mA)
Saturation Voltage---(mV)
VBE(SAT)@IC=10IB
Cutoff Frequency vs Collector Current
0.1
1
1 10 100
Collector Current---IC(mA)
Cutoff Frequency-FT(GHZ)
FT@VCE=5V
Power Derating Curve
0
100
200
300
400
500
600
700
0 50 100 150 200
Ambient Temperature --- Ta(℃ )
Power Dissipation---PD(mW)
CYStech Electronics Corp.
Spec. No. : C305A3
Issued Date : 2003.06.13
Revised Date : 2004.02.23
Page No. : 4/4
2N4403A3 CYStek Product Specification
TO-92 Dimension
*: Typical
Inches Millimeters Inches Millimeters
DIM Min. Max. Min. Max.
DIM Min. Max. Min. Max.
A 0.1704 0.1902 4.33 4.83 G 0.0142 0.0220 0.36 0.56
B 0.1704 0.1902 4.33 4.83 H - *0.1000 - *2.54
C 0.5000 - 12.70 - I - *0.0500 - *1.27
D 0.0142 0.0220 0.36 0.56 α1 - *5° - *5°
E - *0.0500 - *1.27 α2 - *2° - *2°
F 0.1323 0.1480 3.36 3.76 α3 - *2° - *2°
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead: 42 Alloy ; solder plating
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
2N
N4403
Marking:
31
A
D
B
C
Iα1
E
F
α2
α3
G
H
2
Style: Pin 1.Emitter 2.Base 3.Collector
3-Lead TO-92 Plastic Package
CYStek Packa
g
e Code: A3
