VS-FB190SA10 www.vishay.com Vishay Semiconductors Power MOSFET, 190 A FEATURES * Fully isolated package * Very low on-resistance * Fully avalanche rated * Dynamic dV/dt rating * Low drain to case capacitance * Low internal inductance * Optimized for SMPS applications * Easy to use and parallel SOT-227 * Industry standard outline * Designed and qualified for industrial level * UL approved file E78996 * Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION PRIMARY CHARACTERISTICS VDSS High current density power MOSFETs are paralleled into a compact, high power module providing the best combination of switching, ruggedized device design, very low on-resistance and cost effectiveness. 100 V ID DC 190 A RDS(on) 6.5 m Type Modules - MOSFET Package SOT-227 The isolated SOT-227 package is preferred for all commercial-industrial applications at power dissipation levels to approximately higher than 500 W. The low thermal resistance and easy connection to the SOT-227 package contribute to its universal acceptance throughout the industry. ABSOLUTE MAXIMUM RATINGS PARAMETER Continuous drain current at VGS 10 V SYMBOL ID Pulsed drain current IDM Power dissipation PD TEST CONDITIONS TC = 40 C TC = 100 C UNITS 190 130 A 720 TC = 25 C Linear derating factor Gate to source voltage MAX. 568 W 2.7 W/C VGS 20 V EAS (2) 700 mJ Avalanche current IAR (1) 180 A Repetitive avalanche energy EAR (1) 48 mJ V/ns Single pulse avalanche energy Peak diode recovery dV/dt dV/dt (3) 5.7 Operating junction and storage temperature range TJ, TStg -55 to +150 C VISO 2.5 kV 1.3 Nm Insulation withstand voltage (AC-RMS) Mounting torque M4 screw Notes (1) Repetitive rating; pulse width limited by maximum junction temperature (2) Starting T = 25 C, L = 43 H, R = 25 , I J g AS = 180 A (3) I SD 180 A, dI/dt 83 A/s, VDD V(BR)DSS, TJ 150 C Revision: 02-Oct-2018 Document Number: 93459 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-FB190SA10 www.vishay.com Vishay Semiconductors THERMAL - MECHANICAL SPECIFICATIONS PARAMETER MIN. TYP. MAX. UNITS TJ, TStg -55 - 150 C Junction to case RthJC - - 0.22 Case to heatsink RthCS Flat, greased surface - 0.05 - - 30 - g Torque to terminal - - 1.1 (9.7) Nm (lbf.in) Torque to heatsink - - Junction and storage temperature range SYMBOL TEST CONDITIONS Weight Mounting torque Case style C/W 1.8 (15.9) Nm (lbf.in) SOT-227 ELECTRICAL CHARACTERISTICS (TJ = 25 C unless otherwise noted) PARAMETER Drain to source breakdown voltage Breakdown voltage temperature coefficient SYMBOL V(BR)DSS V(BR)DSS/TJ TEST CONDITIONS VGS = 0 V, ID = 250 A Reference to 25 C, ID = 1 mA MIN. TYP. MAX. UNITS 100 - - V - 0.093 - V/C m Static drain to source on-resistance RDS(on) VGS = 10 V, ID = 180 A - 5.4 6.5 Gate threshold voltage VGS(th) VDS = VGS, ID = 250 A 2.0 3.3 4.35 V Forward transconductance gfs VDS = 25 V, ID = 180 A 93 - - S Drain to source leakage current IDSS VDS = 100 V, VGS = 0 V - - 50 VDS = 80 V, VGS = 0 V, TJ = 125 C - - 500 Gate to source forward leakage IGSS Total gate charge Qg Gate to source charge Qgs Gate to drain ("Miller") charge Qgd Turn-on delay time td(on) VGS = 20 V - - 200 VGS = - 20 V - - - 200 ID = 180 A VDS = 80 V VGS = 10 V - 250 - - 40 - - 110 - - 45 - - 351 - - 181 - Fall time tf VDD = 50 V ID = 180 A Rg = 2.0(internal) RD = 0.27 - 335 - Internal source inductance LS Between lead, and center of die contact - 5.0 - VGS = 0 V VDS = 25 V f = 1.0 MHz - 10 700 - - 2800 - - 1300 - MIN. TYP. MAX. - - 190 - - 740 Rise time Turn-off delay time tr td(off) Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss A nA nC ns nH pF SOURCE-DRAIN RATINGS AND CHARACTERISTICS PARAMETER Continuous source current (body diode) Pulsed source current (body diode) SYMBOL IS ISM TEST CONDITIONS D MOSFET symbol showing the integral reverse p-n junction diode. UNITS A G S Diode forward voltage VSD Reverse recovery time trr Reverse recovery charge Qrr Forward turn-on time ton TJ = 25 C, IS = 180 A, VGS = 0 V - 1.0 1.3 V TJ = 25 C, IF = 180 A, dI/dt = 100 A/s - 300 - ns - 2.6 - C Intrinsic turn-on time is negligible (turn-on is dominated by LS + LD) Revision: 02-Oct-2018 Document Number: 93459 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-FB190SA10 www.vishay.com 2.5 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V I D , Drain-to-Source Current (A) TOP 100 4.5V 10 20s PULSE WIDTH TJ = 25 C 1 0.1 1 10 R DS(on) , Drain-to-Source On Resistance (Normalized) 1000 Vishay Semiconductors 100 ID = 180A 2.0 1.5 1.0 0.5 1000 0 20000 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V C, Capacitance (pF) I D , Drain-to-Source Current (A) 100 4.5V 10 VGS = Ciss = Crss = Coss = Coss Crss 0 1 100 20 VGS , Gate-to-Source Voltage (V) I D , Drain-to-Source Current (A) TJ = 150 C 100 TJ = 25 C 10 V DS = 25V 20s PULSE WIDTH 6 7 8 9 100 Fig. 5 - Typical Capacitance vs. Drain to Source Voltage 1000 5 10 VDS , Drain-to-Source Voltage (V) Fig. 2 - Typical Output Characteristics 4 0V, f = 1MHz Cgs + Cgd , Cds SHORTED Cgd Cds + Cgd 10000 VDS , Drain-to-Source Voltage (V) 1 80 100 120 140 160 Ciss 20s PULSE WIDTH TJ = 150 C 10 60 15000 5000 1 40 Fig. 4 - Normalized On-Resistance vs. Temperature TOP 1 0.1 20 TJ , Junction Temperature( C) VDS , Drain-to-Source Voltage (V) Fig. 1 - Typical Output Characteristics VGS = 10V 0.0 -60 -40 -20 ID = 180 A VDS = 80V VDS = 50V VDS = 20V 15 10 5 FOR TEST CIRCUIT SEE FIGURE 13 0 10 VGS , Gate-to-Source Voltage (V) Fig. 3 - Typical Transfer Characteristics 0 50 100 150 200 250 300 350 400 Q G , Total Gate Charge (nC) Fig. 6 - Typical Gate Charge vs. Gate to Source Voltage Revision: 02-Oct-2018 Document Number: 93459 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-FB190SA10 www.vishay.com Vishay Semiconductors 175 Allowable Case Temperature (C) ISD , Reverse Drain Current (A) 1000 TJ = 150 C 100 10 TJ = 25 C 1 0.1 0.2 150 125 DC 100 V GS = 0 V 0.6 1.0 1.4 75 50 25 0 1.8 25 50 75 100 125 150 175 200 I D , Drain Current in DC (A) VSD ,Source-to-Drain Voltage (V) Fig. 7 - Typical Source Drain Diode Forward Voltage Fig. 9 - Maximum Drain Current vs. Case Temperature 10000 OPERATION IN THIS AREA LIMITED BY RDS(on) 1000 I D , Drain Current (A) VDS RD 10us VGS 100us 100 RG D.U.T. + - VDD 1ms 10 V 10ms 10 Pulse width 1 s Duty factor 0.1 % TC = 25 C TJ = 150 C Single Pulse 1 1 10 100 1000 VDS , Drain-to-Source Voltage (V) Fig. 10 - Switching Time Test Circuit Fig. 8 - Maximum Safe Operating Area VDS 90% 10% VGS td(on) tr t d(off) tf Fig. 11 - Switching Time Waveforms Revision: 02-Oct-2018 Document Number: 93459 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-FB190SA10 www.vishay.com Vishay Semiconductors ZthJC - Thermal Impedance (C/W) 1 0.75 0.5 0.1 0.3 0.2 Single pulse (thermal resistance) 0.1 DC 0.01 0.0001 0.001 0.01 0.1 1 10 t1 , Rectangular Pulse Duration (s) Fig. 12 - Maximum Effective Transient Thermal Impedance, Junction to Case EAS , Single Pulse Avalanche Energy (mJ) 1500 ID 71A 100A BOTTOM 160A TOP 1200 15 V L VDS Driver D.U.T RG + - VDD IAS 20 V 0.01 tp A 900 600 300 0 25 50 75 100 125 150 Starting TJ , Junction Temperature( C) Fig. 13 - Unclamped Inductive Test Circuit Fig. 15 - Maximum Avalanche Energy vs. Drain Current V (B R )D S S tp QG 10 V QGS QGD VG IAS Fig. 14 - Unclamped Inductive Waveforms Charge Fig. 16 - Basic Gate Charge Waveform Revision: 02-Oct-2018 Document Number: 93459 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-FB190SA10 www.vishay.com Vishay Semiconductors Current regulator Same type as D.U.T. 50 k 0.2 F 12 V 0.3 F D.U.T. + V - DS VGS 3 mA IG ID Current sampling resistors Fig. 17 - Gate Charge Test Circuit + D.U.T. Circuit layout considerations * Low stray inductance * Ground plane * Low leakage inductance current transformer 3 + 2 4 - - + 1 RG * * * * dV/dt controlled by RG Driver same type as D.U.T. ISD controlled by duty factor "D" D.U.T. - Device under test + - VDD Fig. 18 - Peak Diode Recovery dV/dt Test Circuit Driver Gate Drive P.W. D= Period P.W. Period VGS=10V * D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage Body Diode VDD Forward Drop Inductor Curent Ripple 5% ISD * VGS = 5V for Logic Level Devices Fig. 19 - For N-Channel Power MOSFETs Revision: 02-Oct-2018 Document Number: 93459 6 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-FB190SA10 www.vishay.com Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS- F B 190 S A 10 1 2 3 4 5 6 7 1 - Vishay Semiconductors product 2 - Power MOSFET 3 - Generation 5 MOSFET 4 - Current rating (190 = 190 A) 5 - Single switch 6 - Package indicator (SOT-227) 7 - Voltage rating (10 = 100 V) CIRCUIT CONFIGURATION CIRCUIT CIRCUIT CONFIGURATION CODE CIRCUIT DRAWING D (3) 3 (D) 2 (G) 4 (S) 1 (S) G (2) S (1-4) Lead Assignment Single switch S (S) (D) 4 3 1 2 (S) (G) LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95423 Packaging information www.vishay.com/doc?95425 Revision: 02-Oct-2018 Document Number: 93459 7 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors SOT-227 Generation II DIMENSIONS in millimeters (inches) 38.30 (1.508) 37.80 (1.488) O 4.10 (0.161) O 4.30 (0.169) -A- 4 x M4 nuts 6.25 (0.246) 6.50 (0.256) 12.50 (0.492) 13.00 (0.512) 25.70 (1.012) 24.70 (0.972) -B- 7.45 (0.293) 7.60 (0.299) 14.90 (0.587) 15.20 (0.598) R full 2.10 (0.083) 2.20 (0.087) 30.50 (1.200) 29.80 (1.173) 31.50 (1.240) 32.10 (1.264) 4x 2.20 (0.087) 1.90 (0.075) 8.30 (0.327) 7.70 (0.303) 0.25 (0.010) M C A M B M 4.10 (0.161) 4.50 (0.177) 12.30 (0.484) 11.70 (0.460) -C0.13 (0.005) 25.00 (0.984) 25.50 (1.004) Note * Controlling dimension: millimeter Revision: 02-Aug-12 Document Number: 95423 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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