VS-FB190SA10
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Power MOSFET, 190 A
FEATURES
• Fully isolated package
• Very low on-resistance
• Fully avalanche rated
• Dynamic dV/dt rating
• Low drain to case capacitance
• Low internal inductance
• Optimized for SMPS applications
• Easy to use and parallel
• Industry standard outline
• Designed and qualified for industrial level
• UL approved file E78996
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION
High current density power MOSFETs are paralleled into a
compact, high power module providing the best
combination of switching, ruggedized device design, very
low on-resistance and cost effectiveness.
The isolated SOT-227 package is preferred for all
commercial-industrial applications at power dissipation
levels to approximately higher than 500 W. The low thermal
resistance and easy connection to the SOT-227 package
contribute to its universal acceptance throughout the
industry.
Notes
(1) Repetitive rating; pulse width limited by maximum junction temperature
(2) Starting TJ = 25 °C, L = 43 μH, Rg = 25 , IAS = 180 A
(3) ISD 180 A, dI/dt 83 A/μs, VDD V(BR)DSS, TJ 150 °C
PRIMARY CHARACTERISTICS
VDSS 100 V
ID DC 190 A
RDS(on) 6.5 m
Type Modules - MOSFET
Package SOT-227
SOT-227
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS
Continuous drain current at VGS 10 V ID
TC = 40 °C 190
ATC = 100 °C 130
Pulsed drain current IDM 720
Power dissipation PDTC = 25 °C 568 W
Linear derating factor 2.7 W/°C
Gate to source voltage VGS ± 20 V
Single pulse avalanche energy EAS (2) 700 mJ
Avalanche current IAR (1) 180 A
Repetitive avalanche energy EAR (1) 48 mJ
Peak diode recovery dV/dt dV/dt (3) 5.7 V/ns
Operating junction and storage temperature range TJ, TStg -55 to +150 °C
Insulation withstand voltage (AC-RMS) VISO 2.5 kV
Mounting torque M4 screw 1.3 Nm
VS-FB190SA10
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THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Junction and storage temperature range TJ, TStg -55 - 150 °C
Junction to case RthJC - - 0.22 °C/W
Case to heatsink RthCS Flat, greased surface - 0.05 -
Weight -30 - g
Mounting torque Torque to terminal - - 1.1 (9.7) Nm (lbf.in)
Torque to heatsink - - 1.8 (15.9) Nm (lbf.in)
Case style SOT-227
ELECTRICAL CHARACTERISTICS (TJ = 25 °C unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Drain to source breakdown voltage V(BR)DSS VGS = 0 V, ID = 250 μA 100 - - V
Breakdown voltage temperature
coefficient V(BR)DSS/TJReference to 25 °C, ID = 1 mA - 0.093 - V/°C
Static drain to source on-resistance RDS(on) VGS = 10 V, ID = 180 A - 5.4 6.5 m
Gate threshold voltage VGS(th) VDS = VGS, ID = 250 μA 2.0 3.3 4.35 V
Forward transconductance gfs VDS = 25 V, ID = 180 A 93 - - S
Drain to source leakage current IDSS
VDS = 100 V, VGS = 0 V - - 50 μA
VDS = 80 V, VGS = 0 V, TJ = 125 °C - - 500
Gate to source forward leakage IGSS
VGS = 20 V - - 200 nA
VGS = - 20 V - - - 200
Total gate charge QgID = 180 A
VDS = 80 V
VGS = 10 V
- 250 -
nCGate to source charge Qgs -40-
Gate to drain (“Miller”) charge Qgd - 110 -
Turn-on delay time td(on) VDD = 50 V
ID = 180 A
Rg = 2.0(internal)
RD = 0.27
-45-
ns
Rise time tr- 351 -
Turn-off delay time td(off) - 181 -
Fall time tf - 335 -
Internal source inductance LSBetween lead, and center of die contact - 5.0 - nH
Input capacitance Ciss VGS = 0 V
VDS = 25 V
f = 1.0 MHz
- 10 700 -
pFOutput capacitance Coss - 2800 -
Reverse transfer capacitance Crss - 1300 -
SOURCE-DRAIN RATINGS AND CHARACTERISTICS
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Continuous source current
(body diode) ISMOSFET symbol
showing the integral
reverse p-n junction diode.
- - 190
A
Pulsed source current (body diode) ISM - - 740
Diode forward voltage VSD TJ = 25 °C, IS = 180 A, VGS = 0 V - 1.0 1.3 V
Reverse recovery time trr TJ = 25 °C, IF = 180 A, dI/dt = 100 A/μs - 300 - ns
Reverse recovery charge Qrr -2.6-μC
Forward turn-on time ton Intrinsic turn-on time is negligible (turn-on is dominated by LS + LD)
S
D
G
VS-FB190SA10
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Fig. 1 - Typical Output Characteristics
Fig. 2 - Typical Output Characteristics
Fig. 3 - Typical Transfer Characteristics
Fig. 4 - Normalized On-Resistance vs. Temperature
Fig. 5 - Typical Capacitance vs.
Drain to Source Voltage
Fig. 6 - Typical Gate Charge vs.
Gate to Source Voltage
1
10
100
1000
0.1 1 10 100
20µs PULSE WIDTH
T = 25 C
J°
TOP
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
V , Drain-to-Source Voltage (V)
I , Drain-to-Source Current (A)
DS
D
4.5V
1
10
100
1000
0.1 1 10 100
20μs PULSE WIDTH
T = 150 C
J°
TOP
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
V , Drain-to-Source Voltage (V)
I , Drain-to-Source Current (A)
DS
D
4.5V
1
10
100
1000
4 5 6 7 8 9 10
V = 25V
20µs PULSE WIDTH
DS
V , Gate-to-Source Voltage (V)
I , Drain-to-Source Current (A)
GS
D
T = 25 C
J°
T = 150 C
J°
-60 -40 -20 020 40 60 80 100 120 140 160
0.0
0.5
1.0
1.5
2.0
2.5
T , Junction Temperature( C)
R , Drain-to-Source On Resistance
(Normalized)
J
DS(on)
°
V =
I =
GS
D
10V
180A
1 10 100
0
5000
10000
15000
20000
V , Drain-to-Source Voltage (V)
C, Capacitance (pF)
DS
V
C
C
C
=
=
=
=
0V,
C
C
C
f = 1MHz
+ C
+ C
C SHORTED
GS
iss gs gd , ds
rss gd
oss ds gd
Ciss
Coss
Crss
050 100 150 200 250 300 350 400
0
5
10
15
20
Q , Total Gate Charge (nC)
V , Gate-to-Source Voltage (V)
G
GS
FOR TEST CIRCUIT
SEE FIGURE
I =
D
13
180 A
V = 20V
DS
V = 50V
DS
V = 80V
DS
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Fig. 7 - Typical Source Drain Diode Forward Voltage
Fig. 8 - Maximum Safe Operating Area
Fig. 9 - Maximum Drain Current vs.
Case Temperature
Fig. 10 - Switching Time Test Circuit
Fig. 11 - Switching Time Waveforms
0.1
1
10
100
1000
0.2 0.6 1.0 1.4 1.8
V ,Source-to-Drain Voltage (V)
I , Reverse Drain Current (A)
SD
SD
V = 0 V
GS
T = 150 C
J°
T = 25 C
J°
1
10
100
1000
10000
1 10 100 1000
OPERATION IN THIS AREA LIMITED
BY RDS(on)
Single Pulse
T
T
= 150 C
= 25 C
°
°
J
C
V , Drain-to-Source Voltage (V)
I , Drain Current (A)I , Drain Current (A)
DS
D
10us
100us
1ms
10ms
0 255075100 150125 175 200
25
50
75
100
125
150
175
Allowable Case Temperature (°C)
I , Drain Current in DC (A)
D
DC
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
D.U.T.
10 V
+
-
VDS
RD
VDD
RG
VGS
V
DS
90%
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
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Fig. 12 - Maximum Effective Transient Thermal Impedance, Junction to Case
Fig. 13 - Unclamped Inductive Test Circuit
Fig. 14 - Unclamped Inductive Waveforms
Fig. 15 - Maximum Avalanche Energy vs. Drain Current
Fig. 16 - Basic Gate Charge Waveform
0.01
0.1
1
0.0001 0.001 0.01 0.1 101
t , Rectangular Pulse Duration (s)
ZthJC - Thermal Impedance (°C/W)
1
Single pulse
(thermal resistance)
0.1
0.2
0.3
0.5
DC
0.75
0.01 Ω
D.U.T
L
+
-
Driver
A
15 V
20 V
RG
VDS
IAS
tp
VDD
tp
V
(BR)DSS
I
AS
25 50 75 100 125 150
0
300
600
900
1200
1500
Starting T , Junction Temperature( C)
E , Single Pulse Avalanche Energy (mJ)
J
AS
°
ID
TOP
BOTTOM
71A
100A
160A
Q
G
Q
GS
Q
GD
V
G
Charge
10 V
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Fig. 17 - Gate Charge Test Circuit
Fig. 18 - Peak Diode Recovery dV/dt Test Circuit
Fig. 19 - For N-Channel Power MOSFETs
D.U.T. V
DS
I
D
I
G
3 mA
V
GS
0.3 µF
50 kΩ
0.2 µF
12 V
Current regulator
Same type as D.U.T.
Current sampling resistors
+
-
+
-
+
+
+
-
-
-
• dV/dt controlled by RG
• Driver same type as D.U.T.
• ISD controlled by duty factor "D"
• D.U.T. - Device under test
D.U.T. Circuit layout considerations
• Low stray inductance
• Ground plane
• Low leakage inductance
current transformer
1
24
3
RG
VDD
P.W. Period
di/dt
Diode Recovery
dv/dt
Ripple ≤ 5%
Body Diode Forward Drop
Re-Applied
Voltage
Reverse
Recovery
Current
Body Diode Forward
Current
V
GS
=10V
V
DD
I
SD
Driver Gate Drive
D.U.T. I
SD
Waveform
D.U.T. V
DS
Waveform
Inductor Curent
D = P. W .
Period
* VGS = 5V for Logic Level Devices
*
VS-FB190SA10
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ORDERING INFORMATION TABLE
CIRCUIT CONFIGURATION
CIRCUIT CIRCUIT
CONFIGURATION CODE CIRCUIT DRAWING
Single switch S
LINKS TO RELATED DOCUMENTS
Dimensions www.vishay.com/doc?95423
Packaging information www.vishay.com/doc?95425
2- Power MOSFET
1-Vishay Semiconductors product
3-Generation 5 MOSFET
4- Current rating (190 = 190 A)
5-Single switch
6- Package indicator (SOT-227)
7- Voltage rating (10 = 100 V)
Device code
51 32 4 6 7
VS- F B 190 SA10
3
(D)
2
(G)
4
(S)
1
(S)
S(1-4)
D(3)
G(2)
1
(S)
4
(S)
3
2
(D)
(G)
Lead Assignment
Outline Dimensions
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SOT-227 Generation II
DIMENSIONS in millimeters (inches)
Note
• Controlling dimension: millimeter
38.30 (1.508)
37.80 (1.488)
-A-
12.50 (0.492)
13.00 (0.512)
7.45 (0.293)
7.60 (0.299)
Ø 4.10 (0.161)
Ø 4.30 (0.169)
30.50 (1.200)
29.80 (1.173)
31.50 (1.240)
32.10 (1.264)
14.90 (0.587)
15.20 (0.598)
6.25 (0.246)
6.50 (0.256)
25.70 (1.012)
24.70 (0.972)
2.10 (0.083)
2.20 (0.087)
-B-
R full
2.20 (0.087)
1.90 (0.075)
8.30 (0.327)
7.70 (0.303)
4 x
4.10 (0.161)
4.50 (0.177)
-C-
0.13 (0.005)
12.30 (0.484)
11.70 (0.460)
25.00 (0.984)
25.50 (1.004)
M M M
0.25 (0.010) CA B
4 x M4 nuts
Legal Disclaimer Notice
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