HiPerFETTM Power MOSFETs Single Die MOSFET IXFN 34N100 RDS(on) G S S Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 1000 V VDGR TJ = 25C to 150C; RGS = 1 M 1000 V VGS Continuous 20 V VGSM Transient 30 V ID25 TC = 25C, Chip capability 34 A IDM TC = 25C, pulse width limited by TJM IAR 136 A TC = 25C 34 A EAR TC = 25C 64 mJ EAS TC = 25C 4 J dv/dt IS IDM, di/dt 100 A/s, VDD VDSS, TJ 150C, RG = 2 5 V/ns PD TC= 25C 700 W -55 ... +150 C TJM 150 C Tstg -55 ... +150 C 2500 3000 V~ V~ TJ 50/60 Hz, RMS IISOL 1 mA Md Mounting torque Terminal connection torque t = 1 min t=1s 1.5/13 Nm/lb.in. 1.5/13 Nm/lb.in. Weight Symbol 30 Test Conditions = 1000V = 34A = 0.28 D N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr VISOL VDSS ID25 g Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. VDSS VGS = 0 V, ID = 3 mA 1000 VGS(th) VDS = VGS, ID = 8 mA 3.0 IGSS VGS = 20 VDC, VDS = 0 IDSS VDS = VDSS VGS = 0 V RDS(on) VGS = 10 V, ID = 0.5 * ID25 Pulse test, t 300 s, duty cycle d 2 % V TJ = 25C TJ = 125C 0.25 5.5 V 200 nA 100 2 A mA 0.28 miniBLOC, SOT-227 B (IXFN) E153432 S G S D G = Gate S = Source D = Drain TAB = Drain Either Source terminal at miniBLOC can be used as Main or Kelvin Source Features *International standard packages *miniBLOC, with Aluminium nitride isolation *Low RDS (on) HDMOSTM process *Rugged polysilicon gate cell structure *Unclamped Inductive Switching (UIS) rated *Low package inductance *Fast intrinsic Rectifier Applications * DC-DC converters * Battery chargers * Switched-mode and resonant-mode power supplies * DC choppers * Temperature and lighting controls Advantages * Easy to mount * Space savings * High power density (c) 2003 IXYS All rights reserved DS98763C(08/03) http://store.iiic.cc/ IXFN 34N100 Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. gfs VDS = 15 V; ID = 0.5 * ID25, pulse test 18 40 S 9200 pF 1200 pF Crss 300 pF td(on) 41 ns Ciss Coss VGS = 0 V, VDS = 25 V, f = 1 MHz tr VGS = 10 V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 td(off) RG = 1 (External), tf Qg(on) Qgs VGS = 10 V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 Qgd 65 ns 110 ns 30 ns 380 nC 65 nC 185 nC RthJC 0.18 RthCK 0.05 Source-Drain Diode K/W M4 screws (4x) supplied Dim. Millimeter Min. Max. Inches Min. Max. A B 31.50 7.80 31.88 8.20 1.240 0.307 1.255 0.323 C D 4.09 4.09 4.29 4.29 0.161 0.161 0.169 0.169 E F 4.09 14.91 4.29 15.11 0.161 0.587 0.169 0.595 G H 30.12 38.00 30.30 38.23 1.186 1.496 1.193 1.505 J K 11.68 8.92 12.22 9.60 0.460 0.351 0.481 0.378 L M 0.76 12.60 0.84 12.85 0.030 0.496 0.033 0.506 N O 25.15 1.98 25.42 2.13 0.990 0.078 1.001 0.084 P Q 4.95 26.54 5.97 26.90 0.195 1.045 0.235 1.059 R S 3.94 4.72 4.42 4.85 0.155 0.186 0.174 0.191 T U 24.59 -0.05 25.07 0.1 0.968 -0.002 0.987 0.004 Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. Symbol Test Conditions IS VGS = 0 V ISM Repetitive; pulse width limited by TJM VSD IF = IS, VGS = 0 V, Pulse test, t 300 s, duty cycle d 2 % t rr IF = IS, -di/dt = 100 A/s, VR = 100 VTJ = 25C TJ =125C TJ = 25C QRM IRM K/W miniBLOC, SOT-227 B 34 A 136 A 1.3 V 180 330 2 8 ns ns C A IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343 http://store.iiic.cc/ IXFN 34N100 50 80 VGS =10V 9V 8V 7V TJ = 25 C ID - Amperes 60 TJ = 125OC VGS =10V 9V 8V 7V 6V 40 ID - Amperes O 40 6V 20 6V 30 20 5V 10 5V 0 0 4 8 12 16 0 20 0 5 10 15 20 25 VDS - Volts VDS - Volts Figure 2. Output Characteristics at 125OC Figure 1. Output Characteristics at 25OC 2.2 2.2 RDS(ON) - Normalized RDS(ON) - Normalized VGS = 10V VGS = 10V 2.0 TJ = 125OC 1.8 1.6 1.4 1.2 O TJ = 25 C 1.9 ID = 34A 1.6 ID =17A 1.3 1.0 0.8 0 10 30 40 1.0 25 50 32 40 24 16 100 125 8 RDS(on) normalized to 0.5 ID25 value vs. TJ 30 TJ = 125oC 20 TJ = 25oC 10 -25 0 25 50 75 150 TJ - Degrees C 50 -50 75 Figure 4. 40 0 50 ID - Amperes RDS(on) normalized to 0.5 ID25 value vs. ID ID - Amperes ID - Amperes Figure 3. 20 100 125 150 TC - Degrees C 0 3.5 4.0 4.5 5.0 5.5 6.0 VGS - Volts Figure 5. Drain Current vs. Case Temperature (c) 2003 IXYS All rights reserved http://store.iiic.cc/ Figure 6. Admittance Curves 6.5 7.0 IXFN 34N100 12 30000 VDS = 500 V ID = 17 A IG = 10 mA 8 Ciss 10000 Capacitance - pF VGS - Volts 10 6 4 f = 100kHz Coss 1000 Crss 2 0 100 0 100 200 300 400 500 600 0 5 10 15 20 25 30 35 40 VDS - Volts Gate Charge - nC Figure 7. Gate Charge Figure 8. Capacitance Curves 100 ID - Amperes 80 60 40 TJ = 125OC TJ = 25OC 20 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 VSD - Volts Figure 9. Forward Voltage Drop of the Intrinsic Diode R(th)JC - K/W 1.000 0.100 0.010 0.001 10-4 10-3 10-2 10-1 100 101 Pulse Width - Seconds Figure 10. Transient Thermal Resistance IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343 http://store.iiic.cc/