Order this document by MRF160/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line N-Channel Enhancement-Mode MOSFET Designed primarily for wideband large-signal output and driver from 30-500 MHz. * Typical Performance at 400 MHz, 28 Vdc Output Power = 4.0 Watts Gain = 17 dB Efficiency = 50% 4.0 W, to 400 MHz MOSFET BROADBAND RF POWER FET * Excellent Thermal Stability, Ideally Suited for Class A Operation * Facilitates Manual Gain Control, ALC and Modulation Techniques * 100% Tested for Load Mismatch at All Phase Angles with 30:1 VSWR * Low Crss - 0.8 pF Typical at VDS = 28 Volts CASE 249-06, STYLE 3 D G S MAXIMUM RATINGS (TJ = 25C unless otherwise noted) Symbol Value Unit Drain-Gate Voltage VDSS 65 Vdc Drain-Gate Voltage (RGS = 1.0 M) VDGR 65 Vdc VGS 40 Vdc Drain Current-Continuous ID 1.0 ADC Total Device Dissipation @ TC = 25C Derate Above 25C PD 24 0.14 Watts W/C Storage Temperature Range Tstg - 65 to +150 C TJ 200 C RJC 7.2 C/W Rating Gate-Source Voltage Operating Junction Temperature THERMAL CHARACTERISTICS Thermal Resistance -- Junction to Case NOTE: Handling and Packaging -- MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. REV 2 RF DEVICE DATA MOTOROLA Motorola, Inc. 1995 MRF160 1 ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic Symbol Min Typ Max 65 -- -- -- -- 0.8 -- -- 1.0 1.0 3.0 6.0 -- 3.8 -- 110 160 -- -- 6.0 -- -- 8.0 -- -- 0.8 -- 15 17 -- 45 50 -- Unit OFF CHARACTERISTICS Drain-Source Breakdown Voltage (VDS = 0 Vdc, VGS = 0 Vdc, ID = 5.0 mA) V(BR)DSS Zero Gate Voltage Drain Current (VDS = 28 Vdc, VGS = 0 V) IDSS Gate-Source Leakage Current (VGS = 40 Vdc, VDS = 0 Vdc) IGSS Vdc mA A ON CHARACTERISTICS Gate Threshold Voltage (VDS = 10 Vdc, ID = 10 mA) VGS(th) Drain Source On-Voltage (VDS (on), VGS = 10 Vdc, ID = 500 mA) VDS(on) Forward Transconductance (VDS = 10 Vdc, ID = 250 mA) Vdc Vdc gfs mS DYNAMIC CHARACTERISTICS Input Capacitance (VDS = 28 Vdc, VGS = 0 V, f = 1.0 MHz) Ciss Output Capacitance (VDS = 28 V, VGS = 0 Vdc, f = 1.0 MHz) Coss Reverse Transfer Capacitance (VDS = 28 Vdc, VGS = 0 Vdc, f = 1.0 MHz) Crss pF pF pF FUNCTIONAL CHARACTERISTICS Common Source Power Gain (VDD = 28 Vdc, Pout = 4.0 W, f = 400 MHz, IDQ = 50 mA) Gps Drain Efficiency (VDD = 28 Vdc, Pout = 4.0 W, f = 400 MHz, IDQ = 50 mA) Electrical Ruggedness (VDD = 28 Vdc, Pout = 4.0 W, f = 400 MHz, IDQ = 50 mA) Load VSWR = 30:1 at All Phase Angles at Frequency of Test % No Degradation in Output Power Series Equivalent Input Impedance (VDD = 28 Vdc, Pout = 4.0 W, f = 400 MHz, IDQ = 50 mA) Zin Series Equivalent Output Impedance (VDD = 28 Vdc, Pout = 4.0 W, f = 400 MHz, IDQ = 50 mA) Zout MRF160 2 dB Ohms -- 5.23-j 27.2 -- -- 14.7-j 31.2 -- Ohms MOTOROLA RF DEVICE DATA RFC1 R4 R3 C7 C8 D1 C10 C9 + VDD 28 V + Vdc C11 - - RFC2 R2 L3 C6 Z6 Z5 C5 Z7 RF OUTPUT R1 RF INPUT Z1 C1 Z2 L1 Z3 C4 L2 C2 Z4 D.U.T. C3 0.240 0.95 0.55 0.65 L2 C1, C5 C2 C3 C4 C6, C7, C8 C9, C10 C11 L1 L2 L3 R1 R2 220 pF, Chip Capacitor 18 pF, ATC Chip Capacitor 2.0-20 pF, Johanson Trimmer Capacitor 2.0-10 pF, Johanson Trimmer Capacitor 0.1 F 680 pF, Feed Through 50 F, 50 V #20 AWG, 1 Turn 0.255 ID #20 AWG, Hairpin 1.3 long, bend into hairpin #20 AWG, Hairpin 1.1 long, bend into hairpin 160 , 1/2 Watt 10 k, 1/2 Watt R3 R4 RFC1 RFC2 Z1 Z2 Z3 Z4 Z5 Z6 Z7 L3 10 k, 10 Turns Bourns 1.8 k, 1/4 Watt Ferroxcube VK200-19/4B 10 Turns, #20 AWG, Enameled Close Wound, 0.250 ID Microstrip Line 0.167 wide, 0.820 long Microstrip Line 0.240 wide, 0.240 long Microstrip Line 0.240 wide, 0.240 long Microstrip Line 0.230 wide, 0.590 long Microstrip Line 0.230 wide, 0.580 long Microstrip Line 0.167 wide, 0.620 long Microstrip Line 0.167 wide, 0.800 long Board Material 0.060 Glass Teflon 2 oz. Copper clad both sides r = 2.55 Figure 1. 400 MHz Test Circuit MOTOROLA RF DEVICE DATA MRF160 3 Typical Characteristics 6 f = 400 MHz VDS = 28 Vdc IDQ = 50 mA 5 Pout , OUTPUT POWER (WATTS) Pout , OUTPUT POWER (WATTS) 6 4 f = 500 MHz 3 2 f = 400 MHz VDS = 13.5 Vdc IDQ = 50 mA 1 0 0 50 100 150 PIN, INPUT POWER (mW) 800 5 Pin = 250 mW 4 150 mW 3 50 mW 2 f = 400 MHz IDQ = 50 mA 1 0 12 250 Figure 2. Output Power versus Input Power 28 3.5 Pout , OUTPUT POWER (WATTS) Pout , OUTPUT POWER (WATTS) 26 4 35 Typical Device Shown VDD = 28 V IDQ = 100 mA VGS(th) = 3 V 30 25 3 VDS = 28 V IDQ = 50 mA Pin = Constant 2.5 20 2 1.5 15 10 f = 400 MHz f = 400 MHz 1 0.5 5 0 -10 -8 -6 -4 -2 0 2 4 6 VDS, GATE-SOURCE VOLTAGE (VOLTS) 8 0 10 0 Figure 4. Output Power versus Gate Voltage 0.5 1 1.5 2 2.5 3 3.5 VGS, GATE-SOURCE VOLTAGE (VOLTS) 4 4.5 Figure 5. Output Power versus Gate Voltage 32 10 I D, DRAIN CURRENT (AMPS) f = 1.0 MHz VGS = 0 V 28 C, CAPACITANCE (pF) 16 20 24 18 22 VDS, SUPPLY VOLTAGE (VOLTS) Figure 3. Output Power versus Voltage 40 24 20 16 12 Coss Ciss 8 4 0 14 1 0.1 Crss 0 4 8 12 16 20 VDS, DRAIN-SOURCE VOLTAGE (VOLTS) 24 28 Figure 6. Capacitance versus Drain-Source Voltage MRF160 4 0 0 1 10 VDS, DRAIN VOLTAGE (VOLTS) 100 Figure 7. DC Safe Operating Area MOTOROLA RF DEVICE DATA f S11 S21 S12 S22 (MHz) |S11| |S21| |S12| |S22| 10 0.96 - 2.0 14.47 177 0.01 96 1.11 - 5.0 30 0.99 -16 13.34 169 0.02 79 0.92 -11 50 0.97 - 28 12.96 159 0.03 70 0.90 - 22 75 0.94 - 40 12.24 148 0.04 60 0.87 - 35 100 0.90 - 52 11.40 139 0.05 51 0.84 - 45 120 0.87 - 61 10.70 132 0.05 45 0.81 - 53 150 0.83 -72 9.66 123 0.06 37 0.77 - 63 170 0.81 -79 9.05 118 0.06 33 0.75 - 69 200 0.78 - 88 8.21 110 0.06 26 0.72 -77 220 0.77 - 93 7.67 106 0.07 23 0.71 - 81 250 0.75 -100 7.00 100 0.07 18 0.69 - 87 300 0.72 -110 6.00 92 0.07 12 0.67 - 96 350 0.71 -118 5.24 84 0.07 6.0 0.66 -103 390 0.71 -124 4.73 79 0.07 1.0 0.66 -108 400 0.70 -125 4.63 77 0.07 0 0.67 -109 410 0.70 -127 4.52 76 0.07 -1.0 0.66 -110 450 0.70 -131 4.10 71 0.07 - 5.0 0.66 -114 470 0.70 -133 3.93 69 0.06 - 6.0 0.67 -116 500 0.70 -137 3.68 65 0.06 - 8.0 0.67 -118 600 0.71 -145 3.01 55 0.06 -14 0.69 -126 700 0.72 -153 2.51 46 0.05 -18 0.71 -132 800 0.73 -160 2.13 37 0.04 - 21 0.73 -137 900 0.75 -166 1.83 30 0.03 -19 0.75 -142 1000 0.76 -171 1.60 23 0.03 -10 0.77 -146 1100 0.77 -177 1.40 16 0.02 3.0 0.79 -151 1200 0.78 177 1.25 10 0.02 18 0.80 -155 1300 0.79 172 1.11 4.0 0.03 29 0.82 -159 1400 0.81 166 1.00 -1.0 0.03 35 0.83 -163 1500 0.81 161 0.90 - 6.0 0.03 48 0.85 -166 Table 1. Common Source Scattering Parameters (VDS = 28 Vdc, ID = 200 mA, 50 System) MOTOROLA RF DEVICE DATA MRF160 5 f S11 S21 S12 S22 (MHz) |S11| |S21| |S12| |S22| 10 0.96 - 4.0 16.09 176 0.01 85 1.08 - 8.0 20 1.00 -15 14.82 171 0.02 82 0.88 -10 30 0.98 - 23 14.64 164 0.03 73 0.89 - 20 50 0.94 - 39 13.76 152 0.04 63 0.86 - 38 85 0.86 - 61 11.81 134 0.06 47 0.79 - 61 150 0.73 - 91 8.63 112 0.08 27 0.70 - 91 170 0.71 - 97 7.90 107 0.09 23 0.68 - 98 200 0.68 -106 6.97 101 0.09 17 0.67 -106 210 0.68 -109 6.68 99 0.09 15 0.66 -108 250 0.66 -117 5.75 92 0.09 10 0.65 -116 300 0.64 -126 4.85 84 0.09 4.0 0.64 -124 350 0.64 -133 4.18 78 0.09 -1.0 0.64 -129 390 0.64 -137 3.75 73 0.09 - 5.0 0.65 -133 400 0.64 -138 3.66 71 0.09 - 6.0 0.65 -134 410 0.64 -140 3.57 70 0.09 -7.0 0.65 -135 450 0.64 -143 3.23 66 0.08 -10 0.66 -138 470 0.65 -145 3.08 64 0.08 -11 0.66 -139 500 0.65 -147 2.88 61 0.08 -13 0.67 -141 550 0.66 -151 2.59 56 0.08 -16 0.67 -144 600 0.67 -154 2.35 52 0.07 -18 0.68 -146 700 0.69 -160 1.96 43 0.07 - 22 0.71 -150 800 0.70 -166 1.67 35 0.06 - 25 0.73 -154 900 0.72 -171 1.43 28 0.05 - 24 0.75 -158 1000 0.74 -177 1.26 22 0.04 - 21 0.77 -161 1100 0.74 178 1.11 16 0.04 -14 0.78 -164 1200 0.76 173 0.99 10 0.04 - 6.0 0.80 -168 1300 0.78 168 0.88 5.0 0.04 2.0 0.81 -171 1400 0.79 163 0.80 0 0.03 8.0 0.83 -174 1500 0.80 158 0.72 - 5.0 0.03 19 0.84 -177 Table 2. Common Source Scattering Parameters (VDS = 12.5 Vdc, ID = 200 mA, 50 System) MRF160 6 MOTOROLA RF DEVICE DATA PACKAGE DIMENSIONS 2 K H 4 J D 1 3 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. SEATING PLANE = GROUND AND IS CONNECTED TO PIN 1 AND 3. M DIM A C D H J K M A C SEATING PLANE INCHES MIN MAX 0.271 0.286 0.112 0.136 0.215 0.235 0.055 0.065 0.003 0.007 0.435 --- _ 45 REF STYLE 3: PIN 1. 2. 3. 4. MILLIMETERS MIN MAX 6.88 7.26 2.84 3.45 5.46 5.97 1.40 1.65 0.08 0.18 11.05 --- _ 45 REF SOURCE GATE SOURCE DRAIN CASE 249-06 ISSUE H MOTOROLA RF DEVICE DATA MRF160 7 Motorola reserves the right to make changes without further notice to any products herein. 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Box 20912; Phoenix, Arizona 85036. 1-800-441-2447 JAPAN: Nippon Motorola Ltd.; Tatsumi-SPD-JLDC, Toshikatsu Otsuki, 6F Seibu-Butsuryu-Center, 3-14-2 Tatsumi Koto-Ku, Tokyo 135, Japan. 03-3521-8315 MFAX: RMFAX0@email.sps.mot.com - TOUCHTONE (602) 244-6609 INTERNET: http://Design-NET.com HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852-26629298 MRF160 8 *MRF160/D* MRF160/D MOTOROLA RF DEVICE DATA