Document Number: 94376 For technical questions, contact: ind-modules@vishay.com www.vishay.com
Revision: 30-Apr-08 1
Inverter Grade Thyristors
(Hockey PUK Version), 720 A
ST333CPbF Series
Vishay High Power Products
FEATURES
• Metal case with ceramic insulator
• All diffused design
• Center amplifying gate
• Guaranteed high dv/dt
• Guaranteed high di/dt
• International standard case TO-200AB (E-PUK)
• High surge current capability
• Low thermal impedance
• High speed performance
• Lead (Pb)-free
• Designed and qualified for industrial level
TYPICAL APPLICATIONS
•Inverters
• Choppers
• Induction heating
• All types of force-commutated converters
ELECTRICAL SPECIFICATIONS
PRODUCT SUMMARY
IT(AV) 720 A
TO-200AB (E-PUK)
RoHS
COMPLIANT
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER TEST CONDITIONS VALUES UNITS
IT(AV)
720 A
Ths 55 °C
IT(RMS)
1435 A
Ths 25 °C
ITSM
50 Hz 11 000 A
60 Hz 11 500
I2t50 Hz 605 kA2s
60 Hz 553
VDRM/VRRM 400 to 800 V
tqRange 10 to 30 µs
TJ- 40 to 125 °C
VOLTAGE RATINGS
TYPE NUMBER VOLTAGE
CODE
VDRM/VRRM, MAXIMUM
REPETITIVE PEAK VOLTAGE
V
VRSM, MAXIMUM
NON-REPETITIVE PEAK VOLTAGE
V
IDRM/IRRM MAXIMUM
AT TJ = TJ MAXIMUM
mA
ST333C..C 04 400 500 50
08 800 900
www.vishay.com For technical questions, contact: ind-modules@vishay.com Document Number: 94376
2Revision: 30-Apr-08
ST333CPbF Series
Vishay High Power Products Inverter Grade Thyristors
(Hockey PUK Version), 720 A
CURRENT CARRYING CAPABILITY
FREQUENCY UNITS
50 Hz 1630 1420 2520 2260 7610 6820
A
400 Hz 1630 1390 2670 2330 4080 3600
1000 Hz 1350 1090 2440 2120 2420 2100
2500 Hz 720 550 1450 1220 1230 1027
Recovery voltage VR50 50 50 V
Voltage before turn-on VDVDRM VDRM VDRM
Rise of on-state current dI/dt 50 - - A/µs
Heatsink temperature 40 55 40 55 40 55 °C
Equivalent values for RC circuit 10/0.47 10/0.47 10/0.47 Ω/µF
ON-STATE CONDUCTION
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average on-state current
at heatsink temperature IT(AV)
180° conduction, half sine wave
double side (single side) cooled
720 (350) A
55 (75) °C
Maximum RMS on-state current IT(RMS) DC at 25 °C heatsink temperature double side cooled 1435
A
Maximum peak, one half cycle,
non-repetitive surge current ITSM
t = 10 ms No voltage
reapplied
Sinusoidal half wave,
initial TJ = TJ maximum
11 000
t = 8.3 ms 11 500
t = 10 ms 100 % VRRM
reapplied
9250
t = 8.3 ms 9700
Maximum I2t for fusing I2t
t = 10 mls No voltage
reapplied
605
kA2s
t = 8.3 ms 553
t = 10 ms 100 % VRRM
reapplied
428
t = 8.3 ms 391
Maximum I2√t for fusing I2√t t = 0.1 to 10 ms, no voltage reapplied 6050 kA2√s
Maximum peak on-state voltage VTM
ITM = 1810 A, TJ = TJ maximum,
tp = 10 ms sine wave pulse 1.96
V
Low level value of threshold voltage VT(TO)1 (16.7 % x π x IT(AV) < I < π x IT(AV)), TJ = TJ maximum 0.91
High level value of threshold voltage VT(TO)2 (I > π x IT(AV)), TJ = TJ maximum 0.93
Low level value of forward slope resistance rt1 (16.7 % x π x IT(AV) < I < π x IT(AV)), TJ = TJ maximum 0.58 mΩ
High level value of forward slope resistance rt2 (I > π x IT(AV)), TJ = TJ maximum 0.58
Maximum holding current IHTJ = 25 °C, IT > 30 A 600 mA
Typical latching current ILTJ = 25 °C, VA = 12 V, Ra = 6 Ω, IG = 1 A 1000
180° el
ITM
180° el
ITM
100 µs
ITM
Document Number: 94376 For technical questions, contact: ind-modules@vishay.com www.vishay.com
Revision: 30-Apr-08 3
ST333CPbF Series
Inverter Grade Thyristors
(Hockey PUK Version), 720 A Vishay High Power Products
SWITCHING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum non-repetitive rate of
rise of turned on current dI/dt TJ = TJ maximum, VDRM = Rated VDRM
ITM = 2 x dI/dt 1000 A/µs
Typical delay time td
TJ = 25 °C, VDM = Rated VDRM, ITM = 50 A DC, tp = 1 µs
Resistive load, gate pulse: 10 V, 5 Ω source 1.1
µs
Maximum turn-off time
minimum
tq
TJ = TJ maximum,
ITM = 550 A, commutating dI/dt = 40 A/µs
VR = 50 V, tp = 500 µs, dV/dt: See table in device code
10
maximum 30
BLOCKING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum critical rate of rise of off-state voltage dV/dt TJ = TJ maximum, linear to 80 % VDRM,
higher value available on request 500 V/µs
Maximum peak reverse and off-state leakage current IRRM,
IDRM TJ = TJ maximum, rated VDRM/VRRM applied 50 mA
TRIGGERING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum peak gate power PGM TJ = TJ maximum, f = 50 Hz, d% = 50 60 W
Maximum average gate power PG(AV) 10
Maximum peak positive gate current IGM
TJ = TJ maximum, tp ≤ 5 ms
10 A
Maximum peak positive gate voltage + VGM 20 V
Maximum peak negative gate voltage - VGM 5
Maximum DC gate currrent required to trigger IGT TJ = 25 °C, VA = 12 V, Ra = 6 Ω200 mA
Maximum DC gate voltage required to trigger VGT 3V
Maximum DC gate current not to trigger IGD TJ = TJ maximum, rated VDRM applied 20 mA
Maximum DC gate voltage not to trigger VGD 0.25 V
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum operating junction temperature range TJ- 40 to 125 °C
Maximum storage temperature range TStg - 40 to 150
Maximum thermal resistance, junction to heatsink RthJ-hs
DC operation single side cooled 0.09
K/W
DC operation double side cooled 0.04
Maximum thermal resistance, case to heatsink RthC-hs
DC operation single side cooled 0.020
DC operation double side cooled 0.010
Mounting force, ± 10 % 9800
(1000)
N
(kg)
Approximate weight 83 g
Case style See dimensions - link at the end of datasheet TO-200AB (E-PUK)
www.vishay.com For technical questions, contact: ind-modules@vishay.com Document Number: 94376
4Revision: 30-Apr-08
ST333CPbF Series
Vishay High Power Products Inverter Grade Thyristors
(Hockey PUK Version), 720 A
Note
• The table above shows the increment of thermal resistance RthJ-hs when devices operate at different conduction angles than DC
Fig. 1 - Current Ratings Characteristics
Fig. 2 - Current Ratings Characteristics
Fig. 3 - Current Ratings Characteristics
Fig. 4 - Current Ratings Characteristics
ΔRthJ-hs CONDUCTION
CONDUCTION ANGLE SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION TEST CONDITIONS UNITS
SINGLE SIDE DOUBLE SIDE SINGLE SIDE DOUBLE SIDE
180° 0.010 0.011 0.007 0.007
TJ = TJ maximum K/W
120° 0.012 0.012 0.012 0.013
90° 0.015 0.015 0.016 0.017
60° 0.022 0.022 0.023 0.023
30° 0.036 0.036 0.036 0.036
20
30
40
50
60
70
80
90
100
110
120
130
0 100 200 300 400 500 600
30°
60°
90° 120° 180°
Averag e On-st at e Current (A)
Conduction Angle
Maximum Allowable Heatsink Temperature (°C)
ST3 3 3 C . . C Se r i e s
(Single Side Cooled)
R (DC) = 0.09 K/ W
thJ-hs
20
30
40
50
60
70
80
90
100
110
120
130
0 100 200 300 400 500 600 700 800 900
DC
30° 60°
90°
120° 180°
Average On-state Current (A)
Conduction Period
Maximum Allowable Heatsink Temperature (°C)
ST3 3 3 C . . C Se r i e s
(Single Side Cooled)
R (DC) = 0.09 K/ W
thJ-hs
10
20
30
40
50
60
70
80
90
100
110
120
130
0 200 400 600 800 1000
30°
60°
90°
120° 180°
Average On-state Current (A)
Conduction Angle
Maximum Allowable Heatsink Temperature (°C)
ST3 3 3 C . . C Se r i e s
(Double Side Cooled)
R (DC) = 0.04 K/ W
thJ-hs
20
30
40
50
60
70
80
90
100
110
120
130
0 200 400 600 800 1000 1200 1400 1600
DC
30°
60°
90°
120°
180°
Average On-state Current (A)
Conduction Period
Maximum Allowable Heatsink Temperature (°C
)
ST333C..C Series
(Double Side Cooled)
R (DC) = 0.04 K/ W
thJ-hs
Document Number: 94376 For technical questions, contact: ind-modules@vishay.com www.vishay.com
Revision: 30-Apr-08 5
ST333CPbF Series
Inverter Grade Thyristors
(Hockey PUK Version), 720 A Vishay High Power Products
Fig. 5 - On-State Power Loss Characteristics
Fig. 6 - On-State Power Loss Characteristics
Fig. 7 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
Fig. 8 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
Fig. 9 - On-State Voltage Drop Characteristics
Fig. 10 - Thermal Impedance ZthJ-hs Characteristics
0
200
400
600
800
1000
1200
1400
1600
1800
2000
2200
0 200 400 600 800 1000
180°
120°
90°
60°
30° RM S Lim i t
Conduction Angle
Maximum Average On-state Power Loss (W)
Average On-state Current (A)
ST333C..C Series
T = 1 2 5 ° C
J
0
200
400
600
800
1000
1200
1400
1600
1800
2000
2200
2400
2600
0 200 400 600 800 1000 12001400 1600
DC
180°
120°
90°
60°
30° RM S Lim i t
Conduction Period
Maximum Average On-state Power Loss (W)
Average On-state Current (A)
ST3 3 3 C . . C Se r i e s
T = 1 2 5 ° C
J
4500
5000
5500
6000
6500
7000
7500
8000
8500
9000
9500
10000
110100
Number Of Equal Amplitude Half Cycle Current Pulses (N)
At Any Rated Load Condition And With
Rated V Applied Following Surge.
RRM
Peak Half Sine Wave On-state Current (A)
Initia l T = 125°C
@ 60 Hz 0.0083 s
@ 5 0 H z 0 . 01 0 0 s
J
ST3 3 3 C . . C Se r i e s
4000
5000
6000
7000
8000
9000
10000
11000
12000
0.01 0.1 1
Pulse Train Duration (s)
Maximum Non Repetitive Surge Current
Versus Pulse Train Duration. Control
Of Conduction May Not Be Maintained.
Pea k Ha lf S
ine Wave On-state Current (A)
Initia l T = 125°C
No Voltage Reapplied
Ra t e d V Re a p p l i e d
RRM
J
ST3 3 3 C . . C Se r i e s
100
1000
10000
0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 6.5
T = 2 5 ° C
J
Instantaneous On-state Current (A)
Instantaneous On-state Voltage (V)
T = 125°C
J
ST3 3 3 C . . C Se r i e s
0.001
0.01
0.1
0.001 0.01 0.1 1 10
Sq u a r e W a v e Pu l se D u r a t i o n ( s)
thJ-hs
Tr a n si e n t Th e rm a l I m p e d a n c e Z ( K/ W)
ST3 3 3 C . . C Se r i e s
Steady State Value
R = 0.09 K/ W
(Single Side Cooled)
R = 0.04 K/ W
(Double Side Cooled)
(DC Operation)
thJ-hs
thJ-hs
www.vishay.com For technical questions, contact: ind-modules@vishay.com Document Number: 94376
6Revision: 30-Apr-08
ST333CPbF Series
Vishay High Power Products Inverter Grade Thyristors
(Hockey PUK Version), 720 A
Fig. 11 - Reverse Recovered Charge Characteristics Fig. 12 - Reverse Recovered Current Characteristics
Fig. 13 - Frequency Characteristics
Fig. 14 - Frequency Characteristics
80
100
120
140
160
180
200
220
240
260
280
300
320
10 20 30 40 50 60 70 80 90 100
I = 500 A
300 A
200 A
100 A
50 A
Rate Of Fall Of On-state Current - di/dt (A/µs)
Maximum Reverse Rec overy Charge - Qrr (µC)
TM
ST3 3 3 C . . C Se r i e s
T = 1 2 5 ° C
J
20
40
60
80
100
120
140
160
180
10 20 30 40 50 60 70 80 90 100
Maximum Reverse Recovery Current - Irr (A)
Rate Of Fall Of Forward Current - di/dt (A/µs)
I = 500 A
300 A
200 A
100 A
50 A
TM
ST3 3 3 C . . C Se r i e s
T = 1 2 5 ° C
J
1E2
1E3
1E4
1 E1 1 E2 1 E3 1 E4
50 Hz
400
2500
100
Pu lse Ba se w id t h ( µs)
Pe a k O n -st a t e C u rre n t ( A )
1000
1500
3000
200
500
5000
ST3 3 3 C . . C Se r i e s
Si n u so i d a l p u l se
T = 4 0 ° C
C
Sn ub b e r c irc uit
R = 1 0 o h m s
C = 0.47 µF
V = 80% V
s
s
DDRM
tp
1E1 1E2 1E3 1E4
50 Hz
400
2500
100
Pu l se Ba se w id t h ( µ s)
1000
1500
3000
200
500
5000 ST333C..C Series
Si n u so i d a l p u l se
T = 55°C
C
Snub b er c irc uit
R = 10 o h m s
C = 0.47 µF
V = 80% V
s
s
DDRM
tp
1E2
1E3
1E4
1 E1 1 E2 1 E3 1E4
50 Hz
400
2500
100
1000
1500
2000
200
500
Pulse Ba sew id t h (µ s)
Peak On-state Current (A)
ST3 3 3 C . . C Se r i e s
Trapezoidal pulse
T = 40°C
di/dt = 50A/µs
3000
Sn u b b e r c i r c u i t
R = 10 o h m s
C = 0.47 µF
V = 80% V
s
s
DDRM
C
tp
5000
1E1 1E2 1E3 1E4
50 Hz
400 100
Pulse Basewidth (µs)
1000
1500
2000
200
500
2500
Sn u b b e r c i r c u i t
R = 1 0 o h m s
C = 0.47 µF
V = 80% V
DRM
s
s
D
ST3 3 3 C . . C Se r i e s
Trapezoidal pulse
T = 55 ° C
di/ dt = 100A/ µs
C
3000
5000 tp
Document Number: 94376 For technical questions, contact: ind-modules@vishay.com www.vishay.com
Revision: 30-Apr-08 7
ST333CPbF Series
Inverter Grade Thyristors
(Hockey PUK Version), 720 A Vishay High Power Products
Fig. 15 - Frequency Characteristics
Fig. 16 - Maximum On-State Energy Power Loss Characteristics
Fig. 17 - Gate Characteristics
1E2
1E3
1E4
1E1 1E2 1E3 1E4
50 Hz
400
2500
100
1000
1500
2000
3000
200
500
Pu l se Ba se w id t h ( µ s)
Peak On-state Current (A)
ST3 3 3 C . . C Series
Trap ezoid a l pulse
T = 4 0 ° C
di/ dt = 100A/ µs
Sn u b b e r c i r c u i t
R = 1 0 o h m s
C = 0.47 µF
V = 80% V
s
s
DDRM
C
5000
tp
1E4
1E1 1E2 1E3 1E4
50 Hz
400 100
Pu lse Ba se w id t h ( µ s)
1000
1500
2000
200
500
ST3 3 3 C . . C Se r i e s
Trapezoidal pulse
T = 55 ° C
di/ d t = 100A/ µs
C
2500
Sn u b b e r c i r c u i t
R = 1 0 o h m s
C = 0.47 µF
V = 80% V
s
s
DDRM
tp
3000
5000
1E1
1E2
1E3
1E4
1E1 1E2 1E3 1E4
Pu lse Ba se w id t h ( µ s)
20 joule s p er p ulse
2
1
0.5
0.3
0.2
10
5
Pe a k O n -st a t e C u rre n t ( A)
3
ST3 3 3 C . . C Se r i e s
Sinusoidal pulse
tp
1E11E21E31E4
Pu lse Ba se w id t h ( µs)
20 jo ules p er pulse
2
1
0.5
0.3
0.2
10
3
ST3 3 3 C Se r i e s
Re c t a ng u la r p u l se
di/dt = 50A/µs
0.4
tp 5
0.1
1
10
100
0.001 0.01 0.1 1 10 100
VGD
IGD
(b)
(a)
Tj=25 °C
Tj = 1 2 5 ° C
Tj = - 4 0 ° C
(1) (2)
Instantaneous Gate Current (A)
Instantaneous Gate Voltage (V)
Rectangular gate pulse
a) Recommended load line for
b) Recommended load line for
<=30% rated di/dt : 10V, 10ohms
rated di/dt : 20V, 10ohms; tr<=1 µs
tr<=1 µs
(1) PGM = 10W, tp = 20ms
(2) PGM = 20W, tp = 10ms
(3) PGM = 40W, tp = 5ms
(4) PGM = 60W, tp = 3.3ms
(3)
Device: ST333C..C Series Frequency Limited by PG(AV)
(4)
www.vishay.com For technical questions, contact: ind-modules@vishay.com Document Number: 94376
8Revision: 30-Apr-08
ST333CPbF Series
Vishay High Power Products Inverter Grade Thyristors
(Hockey PUK Version), 720 A
ORDERING INFORMATION TABLE
3 = Fast-on terminals
1- Thyristor
2- Essential part number
3- 3 = Fast turn-off
4- C = Ceramic PUK
5- Voltage code x 100 = VRRM
10
6- C = Puk case TO-200AB (E-PUK)
7- Reapplied dV/dt code (for tq test condition)
8-t
q code
9- 0 = Eyelet terminals
1 = Fast-on terminals
dV/dt - tq combinations available
dV/dt (V/µs) 20 50 100 200 400
10
12
CN DN EN
tq (µs)
2 = Eyelet terminals
11
- Critical dV/dt:
None = 500 V/µs (standard value)
L = 1000 V/µs (special selection)
- P = Lead (Pb)-free
* Standard part number.
All other types available only on request.
15 CL DL EL FL* HL
CM DM EM FM*
20
CP DP EP FP HP
18
CK DK EK FK HK
--- HJ
25
30
FJ
(see Voltage Ratings table)
(gate and auxiliary cathode unsoldered leads)
(gate and auxiliary cathode unsoldered leads)
(gate and auxiliary cathode soldered leads)
(gate and auxiliary cathode soldered leads)
--
-
----HH
Device code
51 324
6 7 8 9 10 11
ST 33 3 C 08 C H K 1 - P
LINKS TO RELATED DOCUMENTS
Dimensions http://www.vishay.com/doc?95075
Document Number: 95075 For technical questions, contact: indmodules@vishay.com www.vishay.com
Revision: 01-Aug-07 1
TO-200AB (E-PUK)
Outline Dimensions
Vishay Semiconductors
DIMENSIONS in millimeters (inches)
4.75 (0.19)
28 (1.10)
6.5 (0.26)
0.3 (0.01) MIN.
0.3 (0.01) MIN.
25.3 (0.99)
DIA. MAX.
14.1/15.1
(0.56/0.59)
25° ± 5°
25.3 (0.99)
DIA. MAX.
40.5 (1.59) DIA. MAX.
42 (1.65) MAX.
Anode to gate
Creepage distance: 11.18 (0.44) minimum
Strike distance: 7.62 (0.30) minimum
Quote between upper and lower pole pieces has to be considered after
application of mounting force (see thermal and mechanical specification)
Gate terminal for
1.47 (0.06) DIA.
pin receptacle
2 holes 3.56 (0.14) x 1.83 (0.07) minimum deep
Legal Disclaimer Notice
www.vishay.com Vishay
Revision: 02-Oct-12 1Document Number: 91000
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please
contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by
any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
Material Category Policy
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free
requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
conform to JEDEC JS709A standards.
