ST333CPbF Series Vishay High Power Products Inverter Grade Thyristors (Hockey PUK Version), 720 A FEATURES * * * * * * * * * * * TO-200AB (E-PUK) Metal case with ceramic insulator All diffused design Center amplifying gate Guaranteed high dv/dt Guaranteed high di/dt International standard case TO-200AB (E-PUK) High surge current capability Low thermal impedance High speed performance Lead (Pb)-free Designed and qualified for industrial level RoHS COMPLIANT TYPICAL APPLICATIONS PRODUCT SUMMARY IT(AV) * * * * 720 A Inverters Choppers Induction heating All types of force-commutated converters MAJOR RATINGS AND CHARACTERISTICS PARAMETER TEST CONDITIONS IT(AV) Ths IT(RMS) Ths ITSM I2 t VALUES 720 A 55 C 1435 A 25 C 50 Hz 11 000 60 Hz 11 500 50 Hz 605 60 Hz 553 VDRM/VRRM 400 to 800 tq Range TJ UNITS A kA2s V 10 to 30 s - 40 to 125 C ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS TYPE NUMBER VOLTAGE CODE VDRM/VRRM, MAXIMUM REPETITIVE PEAK VOLTAGE V VRSM, MAXIMUM NON-REPETITIVE PEAK VOLTAGE V 04 400 500 08 800 900 ST333C..C Document Number: 94376 Revision: 30-Apr-08 For technical questions, contact: ind-modules@vishay.com IDRM/IRRM MAXIMUM AT TJ = TJ MAXIMUM mA 50 www.vishay.com 1 ST333CPbF Series Inverter Grade Thyristors (Hockey PUK Version), 720 A Vishay High Power Products CURRENT CARRYING CAPABILITY ITM FREQUENCY ITM 180 el 50 Hz 1630 ITM 100 s 180 el 1420 2520 UNITS 2260 7610 6820 400 Hz 1630 1390 2670 2330 4080 3600 1000 Hz 1350 1090 2440 2120 2420 2100 2500 Hz 720 550 1450 1220 1230 Voltage before turn-on VD 50 50 VDRM VDRM VDRM Rise of on-state current dI/dt 50 Heatsink temperature 40 Equivalent values for RC circuit 1027 50 Recovery voltage VR 55 10/0.47 40 A V 55 10/0.47 A/s 40 55 C /F 10/0.47 ON-STATE CONDUCTION PARAMETER SYMBOL Maximum average on-state current at heatsink temperature IT(AV) Maximum RMS on-state current IT(RMS) TEST CONDITIONS 180 conduction, half sine wave double side (single side) cooled DC at 25 C heatsink temperature double side cooled t = 10 ms Maximum peak, one half cycle, non-repetitive surge current ITSM t = 8.3 ms t = 10 ms t = 8.3 ms t = 10 mls Maximum I2t for fusing I2t t = 8.3 ms t = 10 ms t = 8.3 ms Maximum I2t I2t for fusing Maximum peak on-state voltage VTM VALUES No voltage reapplied 720 (350) A 55 (75) C 1435 11 000 No voltage reapplied 100 % VRRM reapplied 11 500 A 9250 Sinusoidal half wave, initial TJ = TJ maximum 100 % VRRM reapplied 9700 605 553 428 6050 ITM = 1810 A, TJ = TJ maximum, tp = 10 ms sine wave pulse 1.96 0.91 VT(TO)1 (16.7 % x x IT(AV) < I < x IT(AV)), TJ = TJ maximum High level value of threshold voltage VT(TO)2 (I > x IT(AV)), TJ = TJ maximum 0.93 Low level value of forward slope resistance rt1 (16.7 % x x IT(AV) < I < x IT(AV)), TJ = TJ maximum 0.58 High level value of forward slope resistance rt2 (I > x IT(AV)), TJ = TJ maximum 0.58 Maximum holding current IH TJ = 25 C, IT > 30 A 600 Typical latching current IL TJ = 25 C, VA = 12 V, Ra = 6 , IG = 1 A 1000 For technical questions, contact: ind-modules@vishay.com kA2s 391 t = 0.1 to 10 ms, no voltage reapplied Low level value of threshold voltage www.vishay.com 2 UNITS kA2s V m mA Document Number: 94376 Revision: 30-Apr-08 ST333CPbF Series Inverter Grade Thyristors Vishay High Power Products (Hockey PUK Version), 720 A SWITCHING PARAMETER SYMBOL Maximum non-repetitive rate of rise of turned on current dI/dt Typical delay time td TJ = 25 C, VDM = Rated VDRM, ITM = 50 A DC, tp = 1 s Resistive load, gate pulse: 10 V, 5 source tq TJ = TJ maximum, ITM = 550 A, commutating dI/dt = 40 A/s VR = 50 V, tp = 500 s, dV/dt: See table in device code minimum Maximum turn-off time TEST CONDITIONS TJ = TJ maximum, VDRM = Rated VDRM ITM = 2 x dI/dt maximum VALUES UNITS 1000 A/s 1.1 10 s 30 BLOCKING PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum critical rate of rise of off-state voltage dV/dt TJ = TJ maximum, linear to 80 % VDRM, higher value available on request 500 V/s Maximum peak reverse and off-state leakage current IRRM, IDRM TJ = TJ maximum, rated VDRM/VRRM applied 50 mA SYMBOL TEST CONDITIONS VALUES UNITS TRIGGERING PARAMETER Maximum peak gate power PGM Maximum average gate power PG(AV) Maximum peak positive gate current IGM Maximum peak positive gate voltage + VGM Maximum peak negative gate voltage - VGM Maximum DC gate currrent required to trigger IGT Maximum DC gate voltage required to trigger VGT Maximum DC gate current not to trigger IGD Maximum DC gate voltage not to trigger VGD TJ = TJ maximum, f = 50 Hz, d% = 50 60 10 10 TJ = TJ maximum, tp 5 ms 20 5 TJ = 25 C, VA = 12 V, Ra = 6 TJ = TJ maximum, rated VDRM applied W A V 200 mA 3 V 20 mA 0.25 V VALUES UNITS THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum operating junction temperature range Maximum storage temperature range Maximum thermal resistance, junction to heatsink Maximum thermal resistance, case to heatsink TEST CONDITIONS TJ - 40 to 125 TStg - 40 to 150 RthJ-hs RthC-hs DC operation single side cooled 0.04 DC operation single side cooled 0.020 DC operation double side cooled 0.010 Approximate weight Case style Document Number: 94376 Revision: 30-Apr-08 0.09 DC operation double side cooled Mounting force, 10 % See dimensions - link at the end of datasheet For technical questions, contact: ind-modules@vishay.com C K/W 9800 (1000) N (kg) 83 g TO-200AB (E-PUK) www.vishay.com 3 ST333CPbF Series Vishay High Power Products Inverter Grade Thyristors (Hockey PUK Version), 720 A RthJ-hs CONDUCTION SINUSOIDAL CONDUCTION CONDUCTION ANGLE RECTANGULAR CONDUCTION SINGLE SIDE DOUBLE SIDE SINGLE SIDE DOUBLE SIDE 180 0.010 0.011 0.007 0.007 120 0.012 0.012 0.012 0.013 90 0.015 0.015 0.016 0.017 60 0.022 0.022 0.023 0.023 30 0.036 0.036 0.036 0.036 TEST CONDITIONS UNITS TJ = TJ maximum K/W ST333C..C Series (Single Side Cooled) RthJ-hs(DC) = 0.09 K/ W 120 110 100 90 Conduction Angle 80 70 60 30 50 60 40 90 30 120 180 20 0 100 200 300 400 500 600 ST333C..C Series (Single Side Cooled) RthJ-hs(DC) = 0.09 K/ W 90 80 Conduction Period 70 60 www.vishay.com 4 100 90 80 Conduction Angle 70 60 50 30 60 40 90 30 120 20 10 0 200 400 600 180 800 1000 Fig. 3 - Current Ratings Characteristics 100 20 110 Fig. 1 - Current Ratings Characteristics 110 30 ST333C..C Series (Double Side Cooled) RthJ-hs(DC) = 0.04 K/ W 120 Average On-state Current (A) 120 40 130 Average On-state Current (A) 130 50 Maximum Allowable Heatsink Temperature (C) 130 30 60 90 120 180 DC 0 100 200 300 400 500 600 700 800 900 Maximum Allowable Heatsink Temperature (C) Maximum Allowable Heatsink Temperature (C) Maximum Allowable Heatsink Temperature (C) Note * The table above shows the increment of thermal resistance RthJ-hs when devices operate at different conduction angles than DC 130 ST333C..C Series (Double Side Cooled) RthJ-hs(DC) = 0.04 K/ W 120 110 100 90 Conduction Period 80 70 30 60 60 50 90 40 120 180 30 DC 20 0 200 400 600 800 1000 1200 1400 1600 Average On-state Current (A) Average On-state Current (A) Fig. 2 - Current Ratings Characteristics Fig. 4 - Current Ratings Characteristics For technical questions, contact: ind-modules@vishay.com Document Number: 94376 Revision: 30-Apr-08 ST333CPbF Series 2000 180 120 90 60 30 1800 1600 1400 1000 800 Conduction Angle 600 400 ST333C..C Series TJ = 125C 200 0 200 400 600 800 Maximum Non Repetitive Surge Current Versus Pulse Train Duration. Control 11000 Of Conduction May Not Be Maintained. Initial TJ = 125C 10000 No Voltage Reapplied Rated VRRM Reapplied 9000 8000 7000 6000 5000 ST333C..C Series 4000 0.01 1000 0.1 1 Average On-state Current (A) Pulse Train Duration (s) Fig. 5 - On-State Power Loss Characteristics Fig. 8 - Maximum Non-Repetitive Surge Current Single and Double Side Cooled 2600 2400 2200 2000 10000 DC 180 120 90 60 30 1800 1600 1400 1200 1000 800 RMS Limit Conduction Period 600 400 200 0 ST333C..C Series TJ = 125C Instantaneous On-state Current (A) Maximum Average On-state Power Loss (W) 0 0 Peak Half Sine Wave On-state Current (A) RMS Limit 1200 12000 T = 25C J 1000 T = 125C J ST333C..C Series 100 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 6.5 200 400 600 800 1000 12001400 1600 Average On-state Current (A) Instantaneous On-state Voltage (V) Fig. 6 - On-State Power Loss Characteristics Fig. 9 - On-State Voltage Drop Characteristics 10000 At Any Rated Load Condition And With Rated VRRM Applied Following Surge. Initial TJ = 125C @60 Hz 0.0083 s @50 Hz 0.0100 s 9500 9000 8500 8000 7500 7000 6500 6000 5500 ST333C..C Series 5000 4500 1 10 100 Numb er Of Eq ual Amplitud e Half Cycle Current Pulses (N) Fig. 7 - Maximum Non-Repetitive Surge Current Single and Double Side Cooled Document Number: 94376 Revision: 30-Apr-08 Transient Thermal Impedance Z thJ-hs (K/ W) Maximum Average On-state Power Loss(W) 2200 Peak Half Sine Wave On-state Current (A) Inverter Grade Thyristors Vishay High Power Products (Hockey PUK Version), 720 A 0.1 ST333C..C Series Steady State Value 0.01 R thJ-hs = 0.09 K/ W (Single Side Cooled) R thJ-hs = 0.04 K/ W (Double Side Cooled) (DC Operation) 0.001 0.001 0.01 0.1 1 10 Square Wave Pulse Duration (s) Fig. 10 - Thermal Impedance ZthJ-hs Characteristics For technical questions, contact: ind-modules@vishay.com www.vishay.com 5 ST333CPbF Series Inverter Grade Thyristors (Hockey PUK Version), 720 A 320 Maximum Reverse Rec overy Current - Irr (A) Maximum Reverse Rec overy Charge - Qrr (C) Vishay High Power Products ITM = 500 A 300 A 200 A 100 A 50 A 300 280 260 240 220 200 180 160 140 ST333C..C Series TJ = 125 C 120 100 80 10 20 30 40 50 60 70 80 90 100 Rate Of Fall Of On-state Current - di/ dt (A/ s) 180 ITM = 500 A 300 A 200 A 100 A 50 A 160 140 120 100 80 ST333C..C Series TJ = 125 C 60 40 20 10 20 30 40 50 60 70 80 90 100 Rate Of Fall Of Forward Current - di/ dt (A/ s) Fig. 11 - Reverse Recovered Charge Characteristics Fig. 12 - Reverse Recovered Current Characteristics Peak On-state Current (A) 1E4 1000 500 400 200 100 50 Hz 500 1500 200 100 50 Hz 1500 Snubb er circ uit R s = 10 ohms C s = 0.47 F V D = 80% VDRM 2500 1E3 400 1000 3000 Snub b er circuit Rs = 10 ohms Cs = 0.47 F V D = 80% V DRM 2500 3000 5000 tp 1E2 1E1 1E2 5000 ST333C..C Series Sinusoid a l pulse TC = 40C 1E3 1E4 ST333C..C Series Sinusoida l pulse TC = 55C tp 1E1 1E2 1E3 1E4 Pulse Basewidth (s) Pulse Basewid th (s) Fig. 13 - Frequency Characteristics Peak On-sta te Current (A) 1E4 Snub ber c irc uit R s = 10 ohms C s = 0.47 F V D = 80% VDRM 1000 500 400 200 100 1500 2000 1E3 50 Hz 1000 500 1500 2000 Snub b er circuit R s = 10 ohms C s = 0.47 F V D = 80% VDRM 2500 3000 400 200 2500 3000 ST333C..C Series Tra pezoida l pulse TC = 40C di/ dt = 50A/ s 5000 tp 1E2 1E1 1E2 1E3 100 50 Hz tp 5000 1E4 1E1 ST333C..C Series Trap ezoid al pulse TC = 55C 1E2 di/ dt = 100A/ s 1E3 1E4 Pulse Basewidth (s) Pulse Basewidth (s) Fig. 14 - Frequency Characteristics www.vishay.com 6 For technical questions, contact: ind-modules@vishay.com Document Number: 94376 Revision: 30-Apr-08 ST333CPbF Series Inverter Grade Thyristors Vishay High Power Products (Hockey PUK Version), 720 A Peak On-state Current (A) 1E4 Snubb er circ uit R s = 10 ohms C s = 0.47 F V D = 80% V DRM 500 50 Hz 400 200 100 400 200 100 1000 1500 2000 1E3 1000 Snubb er circ uit R s = 10 ohms C s = 0.47 F V D = 80% VDRM 2500 3000 1500 2000 2500 tp 1E2 tp 5000 1E1 1E 44 1E 1E3 ST333C..C Series Trap ezoid al pulse TC = 55C di/ d t = 100A/ s 3000 ST333C..C Series Trap ezoida l p ulse TC = 40C di/ dt = 100A/ s 5000 1E2 1E1 50 Hz 500 1E2 1E3 1E4 Pulse Basewidth (s) Pulse Basewidth (s) Fig. 15 - Frequency Characteristics Peak On-state Current (A) 1E4 20 joules per p ulse 3 5 ST333C Series Recta ngula r p ulse 10 tp 2 20 joules p er pulse 10 5 d i/ d t = 50A/ s 3 1 1E3 2 0.5 1 0.3 0.5 0.2 0.4 0.3 1E2 0.2 ST333C..C Series Sinusoid al pulse tp 1E1 1E1 1E2 1E3 1E1 1E4 1E2 1E3 1E4 Pulse Basewidth (s) Pulse Basewidth (s) Fig. 16 - Maximum On-State Energy Power Loss Characteristics Rec tangular gate pulse a) Recommended load line for rated di/dt : 20V, 10ohms; tr<=1 s b) Recommended load line for <=30% rated di/ dt : 10V, 10ohms 10 tr<=1 s (1) PGM = 10W, (2) PGM = 20W, (3) PGM = 40W, (4) PGM = 60W, tp tp tp tp = 20ms = 10ms = 5ms = 3.3ms (a) (b) Tj=25 C 1 Tj=-40 C Tj=125 C Instantaneous Gate Voltage (V) 100 (1) (2) (3) (4) VGD IGD 0.1 0.001 0.01 Device: ST333C..C Series Frequency Limited by PG(AV) 0.1 1 10 100 Instantaneous Gate Current (A) Fig. 17 - Gate Characteristics Document Number: 94376 Revision: 30-Apr-08 For technical questions, contact: ind-modules@vishay.com www.vishay.com 7 ST333CPbF Series Vishay High Power Products Inverter Grade Thyristors (Hockey PUK Version), 720 A ORDERING INFORMATION TABLE Device code ST 33 3 C 08 C H K 1 - P 1 2 3 4 5 6 7 8 9 10 11 1 - Thyristor 2 - Essential part number 3 - 3 = Fast turn-off 4 - C = Ceramic PUK 5 - Voltage code x 100 = VRRM (see Voltage Ratings table) 6 - C = Puk case TO-200AB (E-PUK) 7 - 8 - 9 - dV/dt - tq combinations available dV/dt (V/s) 20 50 100 200 10 CN DN EN CM DM EM FM* 12 tq code 15 CL DL EL FL* tq (s) CP DP EP FP 18 0 = Eyelet terminals CK DK EK FK 20 (gate and auxiliary cathode unsoldered leads) FJ 25 30 1 = Fast-on terminals * Standard part number. (gate and auxiliary cathode unsoldered leads) All other types available only on request. 2 = Eyelet terminals Reapplied dV/dt code (for tq test condition) 400 HL HP HK HJ HH (gate and auxiliary cathode soldered leads) 3 = Fast-on terminals (gate and auxiliary cathode soldered leads) 10 - Critical dV/dt: None = 500 V/s (standard value) L = 1000 V/s (special selection) 11 - P = Lead (Pb)-free LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com 8 http://www.vishay.com/doc?95075 For technical questions, contact: ind-modules@vishay.com Document Number: 94376 Revision: 30-Apr-08 Outline Dimensions Vishay Semiconductors TO-200AB (E-PUK) DIMENSIONS in millimeters (inches) Anode to gate Creepage distance: 11.18 (0.44) minimum Strike distance: 7.62 (0.30) minimum 25.3 (0.99) DIA. MAX. 0.3 (0.01) MIN. 14.1/15.1 (0.56/0.59) 0.3 (0.01) MIN. 25.3 (0.99) DIA. MAX. Gate terminal for 1.47 (0.06) DIA. pin receptacle 40.5 (1.59) DIA. MAX. 2 holes 3.56 (0.14) x 1.83 (0.07) minimum deep 6.5 (0.26) 4.75 (0.19) 25 5 42 (1.65) MAX. 28 (1.10) Quote between upper and lower pole pieces has to be considered after application of mounting force (see thermal and mechanical specification) Document Number: 95075 Revision: 01-Aug-07 For technical questions, contact: indmodules@vishay.com www.vishay.com 1 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000