IXFA16N50P IXFP16N50P IXFH16N50P PolarTM HiperFETTM Power MOSFET VDSS ID25 = 500V = 16A 400m 200ns RDS(on) trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-263 AA (IXFA) G S D (Tab) TO-220AB (IXFP) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25C to 150C TJ = 25C to 150C RGS = 1M 500 500 V V VGSS VGSM Continuous Transient 30 40 V V ID25 IDM TC = 25C TC = 25C, Pulse Width Limited by TJM 16 35 A A IA EAS TC = 25C TC = 25C 16 750 A mJ dV/dt IS IDM, VDD VDSS , TJ 150C 10 V/ns PD TC = 25C 300 W -55 ... +150 150 -55 ... +150 C C C 300 260 C C (TO-220 & TO-247) 1.13 / 10 (TO-263) 10..65 / 2.2..14.6 Nmlb.in. N/lb. 2.5 3.0 6.0 g g g TJ TJM Tstg TL TSOLD 1.6mm (0.062 in.) from Case for 10s Plastic Body for 10 Seconds Md FC Mounting Torque Mounting Force Weight TO-263 TO-220 TO-247 G DS D (Tab) TO-247 (IXFH) G D S G = Gate S = Source D (Tab) D = Drain Tab = Drain Features z z z z International Standard Packages Avalanche Rated Fast Intrinsic Diode Low Package Inductance Advantages z Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 250A 500 VGS(th) VDS = VGS, ID = 2.5mA 3.0 IGSS VGS = 30V, VDS = 0V IDSS VDS = VDSS, VGS= 0V RDS(on) z TJ = 125C High Power Density Easy to Mount Space Savings V 5.5 V 100 nA VGS = 10V, ID = 0.5 * ID25, Note 1 (c) 2011 IXYS CORPORATION, All Rights Reserved z 15 A 250 A 400 m Applications z z z z z Switched-Mode and Resonant-Mode Power Supplies DC-DC Converters Laser Drivers AC and DC Motor Drives Robotics and Servo Controls DS99357G(05/11) IXFA16N50P IXFP16N50P IXFH16N50P Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) gfs Characteristic Values Min. Typ. Max. VDS= 20V, ID = 0.5 * ID25, Note 1 9 Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz Crss td(on) tr td(off) tf Resistive Switching Times VGS = 10V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 RG = 10 (External) Qg(on) Qgs VGS= 10V, VDS = 0.5 * VDSS , ID = 0.5 * ID25 Qgd 16 S 2480 pF 237 pF 18 pF 23 ns 25 ns 70 ns 22 ns 43 nC 15 nC 12 nC 0.42 C/W RthJC RthCH TO-220 0.50 C/W TO-247 0.21 C/W TO-247 Outline Pins: 1 - Gate 2 - Drain 3 - Source Source-Drain Diode Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. IS VGS = 0V 16 A ISM Repetitive, Pulse Width Limited by TJM 64 A VSD IF = IS, VGS = 0V, Note 1 1.5 V trr IRM QRM IF = 16A, -di/dt = 100A/s 200 ns A C 6.0 0.6 VR = 100V, VGS = 0V TO-220 Outline Note 1: Pulse test, t 300s, duty cycle, d 2%. TO-263 Outline Pins: 1 - Gate 3 - Source 2 - Drain IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or moreof the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXFA16N50P IXFP16N50P IXFH16N50P Fig. 1. Output Characteristics @ T J = 25C Fig. 2. Output Characteristics @ T J = 125C 20 20 VGS = 10V 8V 7V VGS = 10V 8V 15 ID - Amperes ID - Amperes 15 7V 10 5 10 6V 5 6V 5V 0 0 0 1 2 3 4 5 6 7 8 9 0 2 4 6 8 10 12 14 16 18 20 18 20 VDS - Volts VDS - Volts Fig. 3. RDS(on) Normalized to ID = 8A Value vs. Junction Temperature Fig. 4. RDS(on) Normalized to ID = 8A Value vs. Drain Current 2.8 3.2 2.6 VGS = 10V 2.8 VGS = 10V R DS(on) - Normalized R DS(on) - Normalized 2.4 2.4 I D = 16A 2.0 I D = 8A 1.6 1.2 TJ = 125C 2.2 2.0 1.8 1.6 1.4 TJ = 25C 1.2 0.8 1.0 0.8 0.4 -50 -25 0 25 50 75 100 125 0 150 2 4 6 Fig. 5. Maximum Drain Current vs. Case Temperature 10 12 14 16 Fig. 6. Input Admittance 18 20 16 18 14 16 14 12 ID - Amperes ID - Amperes 8 ID - Amperes TJ - Degrees Centigrade 10 8 6 TJ = 125C 25C - 40C 12 10 8 6 4 4 2 2 0 0 -50 -25 0 25 50 75 TJ - Degrees Centigrade (c) 2011 IXYS CORPORATION, All Rights Reserved 100 125 150 4.0 4.4 4.8 5.2 5.6 VGS - Volts 6.0 6.4 6.8 7.2 IXFA16N50P IXFP16N50P IXFH16N50P Fig. 7. Transconductance Fig. 8. Forward Voltage Drop of Intrinsic Diode 70 28 TJ = - 40C 60 24 50 25C IS - Amperes g f s - Siemens 20 16 125C 12 40 30 8 20 4 10 0 TJ = 125C TJ = 25C 0 0 2 4 6 8 10 12 14 16 18 20 0.3 0.4 0.5 0.6 0.7 ID - Amperes 0.8 0.9 1 1.1 1.2 VSD - Volts Fig. 9. Gate Charge Fig. 10. Capacitance 10,000 10 9 VDS = 250V 8 I G = 10mA Capacitance - PicoFarads I D = 8A VGS - Volts 7 6 5 4 3 Ciss 1,000 100 Coss 10 Crss 2 1 f = 1 MHz 1 0 0 5 10 15 20 25 30 35 40 0 45 5 10 15 20 25 30 35 40 VDS - Volts QG - NanoCoulombs Fig. 11. Forward-Bias Safe Operating Area Fig. 12. Maximum Transient Thermal Impedance 100 1 Z(th)JC - C / W ID - Amperes RDS(on) Limit 25s 10 100s 0.1 1ms TJ = 150C TC = 25C Single Pulse 10ms DC 1 10 100 1000 VDS - Volts 0.01 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: F_16N50P(5J-745)5-1-09-C