SILICON PLANAR NPN MEDIUM-POWER AMPLIFIERS The 2N 5320/BSS 15 and 2N 5321/BSS 16 are silicon planar epitaxial NPN transistors in Jedec TO-39 metal case. They are especially intended for high-voltage medium power applications in industrial ancl commercial equipments. The complementary PNP types are respectively the 2N 5322 and 2N 5323. ABSOLUTE MAXIMUM RATINGS 2N 5320 | 2N 5321 Veso Collector-base voltage (l_- = 0) 100 V 75V Veev Collector-emitter voltage (Vge = -1.5V) 100 V 75V Veco Collector-emitter voltage (I, = 0) 75V 50V Vespo Emitter-base voltage (Ip = 0) ov OV lo Collector current 2A ls Base current 1A Prot Total power dissipation at Tap 25C 1W at Tease & 25C 10W Tg. T; Storage and junction temperature -65 to 200 C MECHANICAL DATA Dimensions in mm 7/76 298THERMAL DATA Rtn j-case Thermal resistance junction-case max 17.5 C/W Rtn j-amp Thermal resistance junction-ambient max 175 C/W ELECTRICAL CHARACTERISTICS (7... = 25C unless otherwise specified) Parameter Test conditions Min. Typ. Max.| Unit leBo Collector cutoff for 2N 5320 current (le = 0) Vep = 80V 0.5] pA for 2N 5321 Veg = 60V 5] UA lego Emitter cutoff current | for 2N 5320 (Ic =0) Vep = 5V 0.1) UA ; for 2N 5321 Ves =4V 0.5) BA Viearycev Collector-emitter ic =0.1mA breakdown voltage for 2N 5320 100 Vv (Vge= -1.5V) for 2N 5321 75 Vv Veeo (sus) Collector-emitter t = 100 mA sustaining voltage for 2N 5320 75 V (Iz =0) for 2N 5321 50 Vv ViaryeBpo Emitter-base le =0.1mMA breakdown voltage for 2N 5320 {6 Vv (Ice = 0) for 2N 5321 5 Vv Vee (sat) Collector-emitter Ie =500mA Ig =50mA saturation voltage for 2N 5320 0.5) V for 2N 5321- 0.8) V Vee Base-emitter voltage Ic =500MA Veg = 4V for 2N 5320 1.1] V for 2N 5321 1.4] V hee* DC current gain for 2N 5320 tc =500 mA Vee = 4V 30 130; le =1 A Vee = 2V 10 _ for 2N 5321 le =500 mA Vege =4V 40 250| fy Transition frequency [l =50mA Voge =4V 50 MHz ton Turn-on time lc =500mMA Vec = 30V Ip, =50mA 80 | ns tort Turn-off time Ic =500MA Vec = 30V lei =-Ip2 =50mA 800; ns * Pulsed: pulse duration = 300 us, duty cycle = 1% 299