October 2006 Rev 2 1/13
13
STP60NS04ZB
N-channel clamped - 10mΩ - 60A - TO-220
Fully protected Mesh Overlay™ Power MOSFET
General features
■100% avalanche tested
■Low capacitance and gate charge
■175 °C maximum junction temperature
Description
This fully clamped Power MOSFET is produced
by using the latest advanced Company’s Mesh
Overlay process which is based on a novel strip
layout. The inherent benefits of the new
technology coupled with the extra clamping
capabilities make this product particularly suitable
for the harshest operation conditions such as
those encountered in the automotive
environment. Any other application requiring extra
ruggedness is also recommended.
Applications
■Switching application
Internal schematic diagram
Type VDSS RDS(on) ID
STP60NS04ZB Clamped < 0.015Ω60A
TO-220
123
www.st.com
Order codes
Part number Marking Package Packaging
STP60NS04ZB P60NS04ZB TO-220 Tube
Contents STP60NS04ZB
2/13
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
STP60NS04ZB Electrical ratings
3/13
1 Electrical ratings
Table 1. Absolute maximum ratings
Symbol Parameter Value Unit
VDS Drain-source voltage (VGS = 0) Clamped V
VGS Gate- source voltage Clamped V
IDDrain current (continuous) at TC = 25°C 60 A
IDDrain current (continuous) at TC = 100°C 42 A
IDG Drain gate current (continuous) ±50 mA
IGS Gate source current (continuous) ±50 mA
IDM(1)
1. Pulse width limited by safe operating area.
Drain current (pulsed) 240 A
Ptot Total dissipation at TC = 25°C 150 W
Derating factor 1 W/°C
VESD(G-S)
Gate-source ESD
(HBM - C = 100pF, R=1.5 kΩ)6KV
VESD(G-D)
Gate-drain ESD
(HBM - C = 100pF, R=1.5 kΩ)4KV
VESD(D-S)
Drain-source ESD
(HBM - C = 100pF, R=1.5 kΩ)4KV
Tstg Storage temperature -65 to 175 °C
TjMax. operating junction temperature
Table 2. Thermal data
Rthj-case Thermal resistance junction-case max 1 °C/W
Rthj-amb Thermal resistance junction-ambient max 62.5 °C/W
TJMaximum lead temperature for soldering purpose 300 °C
Symbol Parameter Max Value Unit
IAR
Avalanche current, repetitive or not-repetitive
(pulse width limited by Tj max) 60 A
EAS
Single pulse avalanche energy
(starting Tj = 25 °C, ID = IAR, VDD = 30 V) 400 mJ
Electrical characteristics STP60NS04ZB
4/13
2 Electrical characteristics
(TCASE=25°C unless otherwise specified)
Table 3. On/off states
Symbol Parameter Test conditions Min. Typ. Max. Unit
V(BR)DSS
Drain-source
breakdown voltage
ID = 1mA, VGS =0
-40 < Tj < 175°C 33 V
IDSS
Zero gate voltage
drain current (VGS = 0)
VDS = 16V; TJ =150°C
VDS = 16V; TJ =175°C
50
100
µA
µA
IGSS
Gate-body leakage
current (VDS = 0)
VGS = ±10V;Tj =175°C
VGS = ±16V;Tj =175°C
50
150
µA
µA
VGSS
Gate-source breakdown
voltage IGS = 100µA 18 V
VGS(th) Gate threshold voltage VDS = VGS, ID = 1mA
-40 < TJ < 150°C 1.734.2V
RDS(on)
Static drain-source on
resistance
VGS = 10V, ID = 30A
VGS = 16V, ID = 30A
11
10
15
14
mΩ
mΩ
Table 4. Dynamic
Symbol Parameter Test conditions Min. Typ. Max. Unit
gfs (1)
1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
Forward
transconductance VDS= 15V, ID=30A 20 40 S
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS = 25V, f = 1MHz,
VGS = 0
1700
800
190
2100
1000
240
pF
pF
pF
tr(Voff)
tf
tc
Turn-on delay time
Fall time
Cross-over time
Vclamp = 30V, ID = 60A
RG=4.7Ω VGS = 10V
(see Figure 14)
60
45
100
75
60
130
ns
ns
ns
Qg
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain charge
VDD = 18V, ID = 60A,
VGS = 10V, RG=4.7Ω
(see Figure 15)
48
13
16
42 nC
nC
nC
STP60NS04ZB Electrical characteristics
5/13
Table 5. Source drain diode
Symbol Parameter Test conditions Min. Typ. Max. Unit
ISD
ISDM (1)
1. Pulse width limited by safe operating area.
Source-drain current
Source-drain current
(pulsed)
60
240
A
A
VSD (2)
2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
Forward on voltage ISD = 60A, VGS = 0 1.5 V
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 60A, di/dt = 100A/µs,
VDD = 15V, Tj = 150°C
(see Figure 16)
50
62
2.6
ns
nC
A
Electrical characteristics STP60NS04ZB
6/13
2.1 Electrical characteristics (curves)
Figure 1. Safe operating area Figure 2. Thermal impedance
Figure 3. Output characterisics Figure 4. Transfer characteristics
Figure 5. Transconductance Figure 6. Static drain-source on resistance
STP60NS04ZB Electrical characteristics
7/13
Figure 7. Gate charge vs gate-source voltage Figure 8. Capacitance variations
Figure 9. Normalized gate threshold voltage
vs temperature
Figure 10. Normalized on resistance vs
temperature
Figure 11. Source-drain diode forward
characteristics
Figure 12. Zero gate voltage drain current vs
temperature
Electrical characteristics STP60NS04ZB
8/13
Figure 13. Normalized BVDSS vs temperature
STP60NS04ZB Test circuit
9/13
3 Test circuit
Figure 14. Switching times test circuit for
resistive load
Figure 15. Gate charge test circuit
Figure 16. Test circuit for inductive load
switching and diode recovery times
Figure 17. Unclamped Inductive load test
circuit
Figure 18. Unclamped inductive waveform Figure 19. Switching time waveform
Package mechanical data STP60NS04ZB
10/13
4 Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a Lead-free second level interconnect . The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at: www.st.com
STP60NS04ZB Package mechanical data
11/13
DIM.
mm. inch
MIN. TYP MAX. MIN. TYP. MAX.
A 4.40 4.60 0.173 0.181
b 0.61 0.88 0.024 0.034
b1 1.15 1.70 0.045 0.066
c 0.49 0.70 0.019 0.027
D 15.25 15.75 0.60 0.620
E 10 10.40 0.393 0.409
e 2.40 2.70 0.094 0.106
e1 4.95 5.15 0.194 0.202
F 1.23 1.32 0.048 0.052
H1 6.20 6.60 0.244 0.256
J1 2.40 2.72 0.094 0.107
L 13 14 0.511 0.551
L1 3.50 3.93 0.137 0.154
L20 16.40 0.645
L30 28.90 1.137
øP 3.75 3.85 0.147 0.151
Q 2.65 2.95 0.104 0.116
TO-220 MECHANICAL DATA
Revision history STP60NS04ZB
12/13
5 Revision history
Table 6. Revision history
Date Revision Changes
21-Jun-2004 1Complete document
04-Oct-2006 2New template, no content change
STP60NS04ZB
13/13
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