OPTEK TECHNOLOGY INC QObE D jp e7sasan 0000150 0 Optoelectronics Division TRW Electronic Components Group Product Bulletin 098 January 1995 T-\-bl Aaeew Infrared Selected NPN Silicon Phototransistors Types OP501SR, OPS501SRD, OP501SRC, OP501SRB, OP501SRA DIMENSIONS ARE iN INCHES (MILLIMETERS). 200 (5.08) .180 (4.57) 500 (12.7) 165 (4.18) 146 (9.68) | wn emirter | | H 1190 (2, 4 125 i q ate i292) | . COLLECTOR ate) fe <a .030 (0.76) HOM 025 (0.84) Te ose 050 (1.27) NOM Features Absolute Maximum Ratings (T4~25C- unless otherwise noted) . Tested using infrared for close correlation to Collector-Emitter Voltage .......0.. cece eee ce eee e cee cence eee e recente esenagateeegenans a0V TAW infrarad emitters Emitter-Collector Voltage... cece eee ene c eee eee ee eeteteeeeeceeetes 50V 0.100 (2.64 mm) lead spacing Storage and Operating Temperatura Ranga... ......... 0... c cee eee cence een eee ~40C to +100C Wide range of collector currents Lead Soldering Temperature (1/16 inch (1.8 mm] from case for 6 sec, with soldering ron}! 240C Lensed for high sensitivity Power Dissipation ...........0..0c ccc ceecc ee eeeeeee ees veces cvabeseseevesevarees 100 mw'2t Description The OP501SA and OPSO1SAD through SRA each consist of an NPN silicon phototransistor mounted in a lansed, clear plastic, and-looking package. Tha lensing effect of the package allows an accep- tance half angla of 8 measured from the optical axis to the half power point. This series is identical to the OP500 except for lead spacing. Tha saries is 100% factory tested using infrared for close correlation to TRW GaAs or GaAlAs emittars and the most accurate design-in possible. This series is mechenically and spectrally matched te the OPIG0SL and OP2GOSL series of infrared emitting diodes. Optoalactronics Division, AW Electronic Components Group, 1218 W. Crosby Ad. Carrolton, 1X 75000 1214) 300-2000, TLX 6710000 or D1a0dg Notes: (1] AMA flax is recommended. Quration ean be extended to 10 sec. max. when wave soldering, (2) erate fineasty 1.93 mW/C above 25C. (3) Junction temperature maintainad at 26C. (4] Light source is an unfiltarad GaAs LED with a peak emission wavelength of 930 nm and 4 radiometric intensity level which varias fass then 10% over tha entire fens surface of the phototransistor being tested, (6) To calculate typical collector dark current in yA, usa the formula Iceg = 107-040 Ta} where Ta is ambient temperature in C. Typical Performance Curves Photosensor Spectral Response vs GaAlAs and GaAs Coupling Characteristics of OP161SL snd OP501 RELATIVE OUTPUT CURRENT RELATIVE RESPONSE OR EMISSION % 0 800 700 800 goo 1600 WAVELENGTH Nanometers Test Conditions (LEO: Ta =Ty= 25C, iF= 100 mA, OC = 0.1%, PW= 100 pa Peak Wavelength - dp: (A) XSTR - 850 +30 nm, {8) LED GaAlAs - 875 220 om, (C} LED GaAs - 830 15 om 4100 a 0.2 O04 06 o.@ 1.0 DISTANCE BETWEEN LENS TIPS inches 5SOPTEK TECHNOLOGY INC ObE D ff 4798580 ONO0LS1 1 i Types OP501SR, OP501SRD, OPSO1SRC, OP501SRB, OP501SRA Electrical Characteristics (TA = 25C unless otherwise noted) -1y)- lel: Symbo} Parameter Min. | Typ. | Max. | Units Test Conditions IC{ON)-) | On-State Collector Current OPS01SR | 0.080 mA | VCE=5.0 , Ey =0.190 mW/cm2 4 OP6O1SAD | 0.080 0:24 | mA | VCE=5.0 V, Ep=0.190 mW/cm2 4 GPEOISRC | 0.160 0.48 | mA | VCE=5.0 V, Ep =0.130 mWieme 4 OPSO1SAB | 0.32 0.95 | mA | VcE=5.0 V, Eg=0.190 mW/em? 4) OPSO1SRA | 0.84 mA | VCE=5.0 V, Ea=0.130 mW/em? (4 Alc/AT | Relative Ic Changes with Temperature 1.00 %/C | VCE=5.0 V, Ep =1.00 mWicm2, d= 930 nm Iceo ') | Collector Dark Current 100 | nA | VCE=10.0 V, Foa=0 VIBRICEO | Collactor-Emitter Breakdown Voltage 30 Vo | ic=100 pA VIBRIECO | Emitter-Collector Breakdown Voltage 50 V [IE=100 pA VCEISAT) 1) | Collector-Emitter Saturation Voltaga 0.60 | Vo | tc=50 pA, f&o=0.130 mWiem2 4, \=930 nm Typical Performance Curves Normalized Collector Current vs Angular Displacement > 2 o esses hin & NORMALIZED COLLECTOR CURRENT S nN a 40 30 2 10 0 10 20 30 407 0 ANGULAR DISPLACEMENT Deg. Rise and Fall Time vs Load Resistance 240 2 200 F 1=100 He ' =1 ms (0 =0P290C @ \= 676 nm 5 160 sls voltage across RE = g 120 2 3 = 40 4 + 40 0 0 2 4 8 8 Ry LOAD RESISTANCE kf 10 Iejon) ON-STATE COLLECTOR CURRENT ~ mA On-State Collector Current vs Irradiance EM My Ty 1 yt Te [_ aPs70 L- | 10 tA} GaAlAs MA ~] (8) GeAs = F (0) Tungsten 2870% Y/ | 3 iE i m a ok 4A = = oN (B} 5 0.01 a Uf a MA d ooo: UZ Ai le eimesiae o.00f O01 Of 1 to 100 Fa IRRADIANCE Wren? Normalized Output vs Frequency "0 Ty Try tT \ we are - T = : \ \ ena Bos 3 CKT 1~ AL=10K 3 ou LSS 1 10 100 FREQUENCY Kitz 1,000 10.000 Normalized Collector Current vs Collector-ta-Emitter Voltage Test Conditions: Ta= 26C Eg= 1 mWient per step, X= 875 nm A: Offeat Region {~ 30 mV - } 8: YCeSAT) at fixed Ic, decressas as optical input Ig NORMALIZED COLLECTOR CURRENT 0.25 Vee ~ COLLECTOR TO EMITTER Volts os Switching Time Test Circuit CIRCUIT 1 CIRCUIT 2 \p Vec=6V if Vec=5 * Vout won = SR, 1000 irae? Re = = == You Test Conditions: Light source is quised LEO with tr and tf <= S00 ns. if is adjusted for VOUT =1 Volt. TRW reserves the right to make changes at any time in order to improve design and to supply the best product possible. Optoelectronics Division, TRW Electronic Components Group, 1216 W. Crosby Rd., Carrollton, TX 75006 (214) 323-2200, TLX 6716032 or 215849 TAW Inc. 1985. TRW is the name and mark of TAW Inc, $5 Printed in U.S.A.