MITSUBISHI Nch POWER MOSFET FK7KM-12 HIGH-SPEED SWITCHING USE FK7KM-12 OUTLINE DRAWING Dimensions in mm 3 0.3 6.5 0.3 2.8 0.2 3.2 0.2 3.6 0.3 14 0.5 15 0.3 10 0.3 1.1 0.2 1.1 0.2 0.75 0.15 w 2.6 0.2 1 2 3 VDSS ................................................................................ 600V rDS (ON) (MAX) .............................................................. 1.63 ID ............................................................................................ 7A Viso ................................................................................ 2000V Integrated Fast Recovery Diode (MAX.) ........150ns 0.75 0.15 2.54 0.25 4.5 0.2 2.54 0.25 q GATE w DRAIN e SOURCE q e TO-220FN APPLICATION Servo motor drive, Robot, UPS, Inverter Fluorecent lamp, etc. MAXIMUM RATINGS Symbol (Tc = 25C) Ratings Unit VDSS Drain-source voltage Parameter VGS = 0V 600 V VGSS ID IDM IS ISM Gate-source voltage Drain current Drain current (Pulsed) VDS = 0V 30 7 21 7 21 35 V A A A A W -55 ~ +150 -55 ~ +150 2000 C C Vrms 2.0 g PD Tch Tstg Source current Source current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Viso -- Isolation voltage Weight Conditions AC for 1minute, Terminal to case Typical value Feb.1999 MITSUBISHI Nch POWER MOSFET FK7KM-12 HIGH-SPEED SWITCHING USE ELECTRICAL CHARACTERISTICS (Tch = 25C) Symbol Parameter V (BR) DSS Drain-source breakdown voltage Gate-source breakdown voltage Gate-source leakage current Drain-source leakage current ID = 1mA, VGS = 0V IG = 100A, VDS = 0V VGS = 25V, VDS = 0V VDS = 600V, VGS = 0V Gate-source threshold voltage Drain-source on-state resistance ID = 1mA, VDS = 10V ID = 3A, VGS = 10V ID = 3A, VGS = 10V ID = 3A, VDS = 10V V (BR) GSS IGSS IDSS VGS (th) rDS (ON) VDS (ON) yfs Ciss Drain-source on-state voltage Forward transfer admittance Input capacitance Coss Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Crss td (on) tr td (off) tf Turn-off delay time Fall time Source-drain voltage VSD Rth (ch-c) VDS = 25V, VGS = 0V, f = 1MHz VDD = 200V, ID = 3A, VGS = 10V, RGEN = RGS = 50 IS = 3A, VGS = 0V Channel to case Thermal resistance Reverse recovery time trr Limits Test conditions IS = 7A, dis/dt = -100A/s Unit Min. Typ. Max. 600 30 -- -- -- -- -- -- 10 V V A -- 2 -- -- -- 3 1.25 3.75 1 4 1.63 4.89 mA V V 3.3 -- -- -- 5.5 1100 125 17 -- -- -- -- S pF pF pF -- -- -- -- 30 30 100 35 -- -- -- -- ns ns ns ns -- 1.5 2.0 V -- -- -- -- 3.57 150 C/W ns PERFORMANCE CURVES MAXIMUM SAFE OPERATING AREA 40 30 20 10 0 5 3 2 DRAIN CURRENT ID (A) POWER DISSIPATION PD (W) POWER DISSIPATION DERATING CURVE 50 0 50 100 150 CASE TEMPERATURE TC (C) 200 101 7 5 3 2 100 7 5 3 2 tw=10s 100s 1ms 10ms TC = 25C Single Pulse 10-1 7 DC 5 100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 DRAIN-SOURCE VOLTAGE VDS (V) Feb.1999 MITSUBISHI Nch POWER MOSFET FK7KM-12 HIGH-SPEED SWITCHING USE OUTPUT CHARACTERISTICS (TYPICAL) TC = 25C Pulse Test PD = 35W VGS=20V 10V 6V 16 12 8 5V 4 10 DRAIN CURRENT ID (A) DRAIN CURRENT ID (A) 20 OUTPUT CHARACTERISTICS (TYPICAL) VGS=20V 10V TC = 25C 6V Pulse Test 8 5V 6 4 PD = 35W 2 4V 4V 0 0 10 20 30 40 0 50 24 16 7A 8 3A 4 8 12 16 DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) () DRAIN-SOURCE ON-STATE VOLTAGE VDS (ON) (V) ID = 14A 20 TC = 25C Pulse Test 4.0 3.0 VGS = 10V 20V 2.0 1.0 0 10-1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 20 GATE-SOURCE VOLTAGE VGS (V) DRAIN CURRENT ID (A) TRANSFER CHARACTERISTICS (TYPICAL) FORWARD TRANSFER ADMITTANCE VS.DRAIN CURRENT (TYPICAL) 101 7 5 20 TC = 25C VDS = 50V Pulse Test 16 FORWARD TRANSFER ADMITTANCE yfs (S) DRAIN CURRENT ID (A) 16 ON-STATE RESISTANCE VS. DRAIN CURRENT (TYPICAL) 5.0 12 8 4 0 12 ON-STATE VOLTAGE VS. GATE-SOURCE VOLTAGE (TYPICAL) 32 0 8 DRAIN-SOURCE VOLTAGE VDS (V) TC = 25C Pulse Test 0 4 DRAIN-SOURCE VOLTAGE VDS (V) 40 0 0 4 8 12 16 20 GATE-SOURCE VOLTAGE VGS (V) TC = 25C VDS = 10V Pulse Test 3 2 75C 125C 100 7 5 3 2 10-1 -1 10 2 3 5 7 100 2 3 5 7 101 DRAIN CURRENT ID (A) Feb.1999 MITSUBISHI Nch POWER MOSFET FK7KM-12 HIGH-SPEED SWITCHING USE CAPACITANCE VS. DRAIN-SOURCE VOLTAGE (TYPICAL) SWITCHING CHARACTERISTICS (TYPICAL) 103 7 5 2 CAPACITANCE Ciss, Coss, Crss (pF) 7 5 3 2 Coss 102 7 5 3 2 Crss 101 Tch = 25C 7 f = 1MHz 5 VGS = 0V 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 3 SWITCHING TIME (ns) Ciss 103 tf 3 2 tr td(on) SOURCE-DRAIN DIODE FORWARD CHARACTERISTICS (TYPICAL) SOURCE CURRENT IS (A) 16 VDS = 100V 200V 12 400V 8 4 101 7 5 5 7 101 2 3 GATE-SOURCE VOLTAGE VS.GATE CHARGE (TYPICAL) 40 0 5 7 100 2 3 DRAIN CURRENT ID (A) 20 40 60 80 VGS = 0V Pulse Test 32 TC = 125C 24 16 75C 8 0 100 25C 0 0.8 1.6 2.4 3.2 4.0 GATE CHARGE Qg (nC) SOURCE-DRAIN VOLTAGE VSD (V) ON-STATE RESISTANCE VS. CHANNEL TEMPERATURE (TYPICAL) THRESHOLD VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 5.0 VGS = 10V ID = 1/2ID Pulse Test GATE-SOURCE THRESHOLD VOLTAGE VGS (th) (V) GATE-SOURCE VOLTAGE VGS (V) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (tC) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (25C) td(off) 102 7 5 DRAIN-SOURCE VOLTAGE VDS (V) Tch = 25C ID = 7A 3 2 100 7 5 3 2 10-1 3 2 101 10-1 20 0 Tch = 25C VDD = 200V VGS = 10V RGEN = RGS = 50 0 50 100 150 200 250 CHANNEL TEMPERATURE Tch (C) VDS = 10V ID = 1mA 4.0 3.0 2.0 1.0 0 -50 0 50 100 150 CHANNEL TEMPERATURE Tch (C) Feb.1999 MITSUBISHI Nch POWER MOSFET FK7KM-12 REVERSE RECOVERY TIME trr (ns) 1.4 VGS = 0V ID = 1mA 1.2 1.0 0.8 0.6 0.4 -50 0 50 100 CHANNEL TEMPERATURE Tch (C) 3 2 101 7 5 101 100 2 3 5 7 102 Tch = 25C 7 Tch = 150C 5 2 3 5 7 103 SOURCE CURRENT dis/dt (-A/s) REVERSE RECOVERY CURRENT Irr (A) 101 7 5 Irr 101 7 5 102 trr 7 5 Irr 3 2 101 3 2 2 3 5 7 101 Tch = 25C Tch = 150C 100 2 3 5 7 102 SOURCE CURRENT IS (A) DIODE REVERSE VS. SOURCE CURRENT dis/dt CHARACTERISTIC (TYPICAL) 5 5 IS = 7A GS = 0V V 3 3 VDD = 250V 2 2 trr 3 2 3 2 3 2 100 150 102 7 5 DIODE REVERSE VS. SOURCE CURRENT CHARACTERISTIC (TYPICAL) 102 103 dis/dt = -100A/s 7 7 VGS = 0V 5 5 VDD = 250V REVERSE RECOVERY CURRENT Irr (A) BREAKDOWN VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) TRANSIENT THERMAL IMPEDANCE Zth (ch - c) (C/ W) DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (25C) REVERSE RECOVERY TIME trr (ns) DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (tC) HIGH-SPEED SWITCHING USE TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS 101 7 5 D=1 3 2 0.5 100 7 5 3 2 10-1 7 5 3 2 0.2 0.1 PDM 0.05 0.02 0.01 tw T Single Pulse D= tw T 10-2 10-4 2 3 5710-3 2 3 5710-22 3 5710-12 3 57100 2 3 57101 2 3 57102 PULSE WIDTH tw (s) Feb.1999