UNISONIC TECHNOLOGIES CO., LTD
2SC1384 NPN SILICON TRANSISTOR
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Copyright © 2008 Unisonic Technologies Co., Ltd QW-R211-005.C
NPN SILICON TRANSISTOR
DESCRIPTION
The UTC 2SC1384 is power amplifier and driver.
FEATURES
* Low VCE(SAT)
* 2~3W output in complementary pair with 2SA684
Lead-free: 2SC1384L
Halogen-free: 2SC1384G
ORDERING INFORMATION
Ordering Number Pin Assignment
Normal Lead Free Plating Halogen-Free Package 1 2 3 Packing
2SC1384-x-AB3-R 2SC1384L-x-AB3-R 2SC1384G-x-AB3-R SOT-89 B C E Tape Reel
2SC1384-x-T9N-B 2SC1384L-x-T9N-B 2SC1384G-x-T9N-B TO-92NL E C B Tape Box
2SC1384-x-T9N-K 2SC1384L-x-T9N-K 2SC1384G-x-T9N-K TO-92NL E C B Bulk
2SC1384-x-T9N-R 2SC1384L-x-T9N-R 2SC1384G-x-T9N-R TO-92NL E C B Tape Reel
2SC1384 NPN SILICON TRANSISTOR
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ABSOLUTE MAXIMUM RATINGS (Ta=25℃, unless otherwise specified )
PARAMETER SYMBOL RATINGS UNIT
Collector-Base Voltage VCBO 60 V
Collector-Emitter Voltage VCEO 50 V
Emitter-Base Voltage VEBO 5 V
Peak Collector Current ICP 1.5 A
Collector Current (DC) IC 1 A
Collector Dissipation (T a=25℃) PC 1000 mW
Junction Temperature TJ 125 ℃
Operating Temperature TOPR -20 ~ +85 ℃
Storage Temperature TSTG -40 ~ +150 ℃
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (Ta=25℃, unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
Collector-Base Breakdown Voltage BVCBO I
C=10μA, IE=0 60 V
Collector-Emitter Breakdown Voltage BVCEO I
C=2mA, IB=0 50 V
Emitter-Base Breakdown Voltage BVEBO I
E=10μA, IC=0 5 V
Collector Cut-Off Current ICBO V
CB=20V, IE=0 0.1 μA
hFE1 V
CE=10V, IC=500mA 85 160 340
DC Current Gain hFE2 VCE=5V, IB=1A 50 100
Collector-Emitter Saturation Voltage VCE(SAT) IC=0.5A, IB=50mA 0.2 0.4 V
Base-Emitter Saturation Voltage VBE(SAT) IC=0.5A, IB=50mA 0.85 1.2 V
Current Gain Bandwidth Product fT VCE=10V, IB=50mA 200 MHz
Output Capacitance Cob V
CB=10V, IE=0, f=1MHz 11 20 pF
CLASSIFICATION OF hFE
RANK Q R S
RANGE 85-170 120-240 170-340
2SC1384 NPN SILICON TRANSISTOR
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TYPICAL CHARACTERISTICS
Collector Power Dissi pa tion, PC(W)
Collector Current, IC(A)
Collector Current, IC(A)
Collector To Emitter Saturation Voltage,
VCE(SAT) (V)
2SC1384 NPN SILICON TRANSISTOR
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TYPICAL CHARACTERISTICS(Cont.)
-1 -3 -10 -30 -100
Emitter Current, IE(mA)
0
20
60
100
140
160
200 VCB=10V
Ta=25℃
40
80
120
180
131030100
Collector To Base Voltage, VCB (V)
0
5
15
25
35
40
50 IE=0
F=1MHz
Ta=25℃
10
20
30
45
Transition Frequency vs.
Emitter Current Collector Output Capacitance vs.
Collector to Base Voltage
100
Base To Emitter Resistance, RBE (KΩ)
0
40
60
80
100
120
20
0.1 0.3 131030
IC=10mA
Ta=25℃VCE=10V
0 20 40 60 80 100 120 140 160
Ambient Temperature, Ta (℃)
1
10
102
103
104
Collector to Emitter Voltage vs.
Base to Emitter Resistance Collector to Emitter Current vs.
Ambient Temperature
Collector Current, IC (A)
2SC1384 NPN SILICON TRANSISTOR
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UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
m alfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believ ed to be accurate
and reliable and m ay be changed without notice.
