NPN Silicon Transistors
. . . fast switching speeds and high current capacity ideally suit these
parts for use in switching regulators, inverters, wide–band amplifiers
and power oscillators in industrial and commercial applications.
•High Speed – tf = 0.5 µs (Max)
•High Current – IC(max) = 30 Amps
•Low Saturation – VCE(sat) = 2.5 V (Max) @ IC = 20 Amps
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
*MAXIMUM RATINGS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Rating
ÎÎÎÎÎÎ
ÎÎÎÎÎÎ
Symbol
ÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎ
Value
ÎÎÎÎ
ÎÎÎÎ
Unit
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector–Base Voltage
ÎÎÎÎÎÎ
ÎÎÎÎÎÎ
VCBO
ÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎ
150
ÎÎÎÎ
ÎÎÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector–Emitter Voltage
ÎÎÎÎÎÎ
ÎÎÎÎÎÎ
VCEV
ÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎ
150
ÎÎÎÎ
ÎÎÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Emitter–Base Voltage
ÎÎÎÎÎÎ
ÎÎÎÎÎÎ
VEBO
ÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎ
7
ÎÎÎÎ
ÎÎÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector Current – Continuous
Peak (1)
ÎÎÎÎÎÎ
Î
ÎÎÎÎ
Î
ÎÎÎÎÎÎ
IC
ICM
ÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎ
20
30
ÎÎÎÎ
Î
ÎÎ
Î
ÎÎÎÎ
Adc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Base Current – Continuous
ÎÎÎÎÎÎ
ÎÎÎÎÎÎ
IB
ÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎ
5
ÎÎÎÎ
ÎÎÎÎ
Adc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Total Device Dissipation @ TC = 25C
Derate above 25C
ÎÎÎÎÎÎ
Î
ÎÎÎÎ
Î
ÎÎÎÎÎÎ
PD
ÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎ
140
0.8
ÎÎÎÎ
Î
ÎÎ
Î
ÎÎÎÎ
Watts
W/C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Operating and Storage Junction Temperature Range
ÎÎÎÎÎÎ
ÎÎÎÎÎÎ
TJ, Tstg
ÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎ
–65 to +200
ÎÎÎÎ
ÎÎÎÎ
C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
THERMAL CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Characteristic
ÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎ
Symbol
ÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
Max
ÎÎÎÎ
ÎÎÎÎ
Unit
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Thermal Resistance, Junction to Case
ÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎ
RθJC
ÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
1.25
ÎÎÎÎ
ÎÎÎÎ
C/W
*Indicates JEDEC Registered Data.
(1) Pulse Test: Pulse Width 10 ms, Duty Cycle 50%.
Figure 1. Switching Time Test Circuit
0
+11 V 10 Ω
-5 V
1N4933
VCC
RC
2.5
IC = 12 AMPS
IB1 = IB2 = 1.2 AMPS
-9 V
2N5038
+30 V
PW = 20 µs
DUTY CYCLE = 1%
IC = 10 AMPS
IB1 = IB2 = 1.0 AMPS
2N5039
ON Semiconductor
Semiconductor Components Industries, LLC, 2001
May, 2001 – Rev. 10 1Publication Order Number:
2N5038/D
2N5038
20 AMPERE
NPN SILICON
POWER TRANSISTOR
90 VOLTS
140 WATTS
CASE 1–07
TO–204AA
(TO–3)
2N5038
http://onsemi.com
2
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
*ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted)
Characteristic
ÎÎÎÎÎ
ÎÎÎÎÎ
Symbol
ÎÎÎ
ÎÎÎ
Min
ÎÎÎÎ
ÎÎÎÎ
Max
ÎÎÎ
ÎÎÎ
Unit
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
OFF CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector–Emitter Sustaining Voltage (2)
(IC = 200 mAdc, IB = 0)
ÎÎÎÎÎ
Î
ÎÎÎ
Î
ÎÎÎÎÎ
VCEO(sus)
ÎÎÎ
Î
Î
Î
ÎÎÎ
90
ÎÎÎÎ
Î
ÎÎ
Î
ÎÎÎÎ
–
ÎÎÎ
Î
Î
Î
ÎÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector Cutoff Current
(VCE = 140 Vdc, VBE(off) = 1.5 V)
(VCE = 100 Vdc, VBE(off) = 1.5 Vdc, TC = 150C)
ÎÎÎÎÎ
Î
ÎÎÎ
Î
Î
ÎÎÎ
Î
ÎÎÎÎÎ
ICEX
ÎÎÎ
Î
Î
Î
Î
Î
Î
ÎÎÎ
–
–
ÎÎÎÎ
Î
ÎÎ
Î
Î
ÎÎ
Î
ÎÎÎÎ
50
10
ÎÎÎ
Î
Î
Î
Î
Î
Î
ÎÎÎ
mAdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Emitter Cutoff Current
(VEB = 5 Vdc, IC = 0)
(VEB = 7 Vdc, IC = 0)
ÎÎÎÎÎ
Î
ÎÎÎ
Î
ÎÎÎÎÎ
IEBO
ÎÎÎ
Î
Î
Î
ÎÎÎ
–
–
ÎÎÎÎ
Î
ÎÎ
Î
ÎÎÎÎ
5
50
ÎÎÎ
Î
Î
Î
ÎÎÎ
mAdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ON CHARACTERISTICS (2)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
DC Current Gain
(IC = 12 Adc, VCE = 5 Vdc)
ÎÎÎÎÎ
Î
ÎÎÎ
Î
ÎÎÎÎÎ
hFE
ÎÎÎ
Î
Î
Î
ÎÎÎ
20
ÎÎÎÎ
Î
ÎÎ
Î
ÎÎÎÎ
100
ÎÎÎ
Î
Î
Î
ÎÎÎ
–
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector–Emitter Saturation Voltage
(IC = 20 Adc, IB = 5 Adc)
ÎÎÎÎÎ
Î
ÎÎÎ
Î
ÎÎÎÎÎ
VCE(sat)
ÎÎÎ
Î
Î
Î
ÎÎÎ
–
ÎÎÎÎ
Î
ÎÎ
Î
ÎÎÎÎ
2.5
ÎÎÎ
Î
Î
Î
ÎÎÎ
Vdc
Base–Emitter Saturation Voltage
(IC = 20 Adc, IB = 5 Adc)
ÎÎÎÎÎ
ÎÎÎÎÎ
VBE(sat)
ÎÎÎ
ÎÎÎ
–
ÎÎÎÎ
ÎÎÎÎ
3.3
ÎÎÎ
ÎÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
DYNAMIC CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Magnitude of Common–Emitter Small–Signal Short–Circuit
Forward Current Transfer Ratio
(IC = 2 Adc, VCE = 10 Vdc, f = 5 MHz)
ÎÎÎÎÎ
Î
ÎÎÎ
Î
Î
ÎÎÎ
Î
ÎÎÎÎÎ
|hfe|
ÎÎÎ
Î
Î
Î
Î
Î
Î
ÎÎÎ
12
ÎÎÎÎ
Î
ÎÎ
Î
Î
ÎÎ
Î
ÎÎÎÎ
–
ÎÎÎ
Î
Î
Î
Î
Î
Î
ÎÎÎ
–
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
SWITCHING CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
RESISTIVE LOAD
ÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎ
Rise Time
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
(VCC = 30 Vdc)
ÎÎÎÎÎ
ÎÎÎÎÎ
tr
ÎÎÎ
ÎÎÎ
–
ÎÎÎÎ
ÎÎÎÎ
0.5
ÎÎÎ
ÎÎÎ
µs
ÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎ
Storage Time
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
(IC = 12 Adc, IB1 = IB2 = 1.2 Adc)
ÎÎÎÎÎ
ÎÎÎÎÎ
ts
ÎÎÎ
ÎÎÎ
–
ÎÎÎÎ
ÎÎÎÎ
1.5
ÎÎÎ
ÎÎÎ
µs
*Indicates JEDEC Registered Data.
(2) Pulse Test: Pulse Width 300, µs, Duty Cycle 2%.
100
Figure 2. Forward Bias Safe Operating Area
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
5
2
0.1 1 10 100
BONDING WIRE LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
70
1
IC, COLLECTOR CURRENT (AMPS)
dc
50
20
10
0.5
0.2
2 3 5 7 20 30 50
TC = 25°C
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC – VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
Second breakdown pulse limits are valid for duty cycles
to 10%. At high case temperatures, thermal limitations may
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
2N5038
http://onsemi.com
3
PACKAGE DIMENSIONS
CASE 1–07
TO–204AA (TO–3)
ISSUE Z
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. ALL RULES AND NOTES ASSOCIATED WITH
REFERENCED TO-204AA OUTLINE SHALL APPLY.
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A1.550 REF 39.37 REF
B--- 1.050 --- 26.67
C0.250 0.335 6.35 8.51
D0.038 0.043 0.97 1.09
E0.055 0.070 1.40 1.77
G0.430 BSC 10.92 BSC
H0.215 BSC 5.46 BSC
K0.440 0.480 11.18 12.19
L0.665 BSC 16.89 BSC
N--- 0.830 --- 21.08
Q0.151 0.165 3.84 4.19
U1.187 BSC 30.15 BSC
V0.131 0.188 3.33 4.77
A
N
E
C
K
–T– SEATING
PLANE
2 PL
D
M
Q
M
0.13 (0.005) Y M
T
M
Y
M
0.13 (0.005) T
–Q–
–Y–
2
1
UL
GB
V
H
2N5038
http://onsemi.com
4
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